NL8502270A - Ladingoverdracht beeldinrichting van het interlijn-type. - Google Patents
Ladingoverdracht beeldinrichting van het interlijn-type. Download PDFInfo
- Publication number
- NL8502270A NL8502270A NL8502270A NL8502270A NL8502270A NL 8502270 A NL8502270 A NL 8502270A NL 8502270 A NL8502270 A NL 8502270A NL 8502270 A NL8502270 A NL 8502270A NL 8502270 A NL8502270 A NL 8502270A
- Authority
- NL
- Netherlands
- Prior art keywords
- charge transfer
- horizontal
- vertical
- imaging device
- charge
- Prior art date
Links
- 238000012546 transfer Methods 0.000 title claims description 80
- 238000003384 imaging method Methods 0.000 claims description 50
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000003860 storage Methods 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 2
- 230000001629 suppression Effects 0.000 claims 1
- 238000010276 construction Methods 0.000 description 12
- 230000035945 sensitivity Effects 0.000 description 12
- 239000000758 substrate Substances 0.000 description 9
- 239000012535 impurity Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 206010034960 Photophobia Diseases 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 208000013469 light sensitivity Diseases 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 101100297546 Streptococcus pneumoniae (strain ATCC BAA-255 / R6) phpP gene Proteins 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
- H04N25/441—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by reading contiguous pixels from selected rows or columns of the array, e.g. interlaced scanning
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59174923A JPS6153766A (ja) | 1984-08-24 | 1984-08-24 | インタ−ライン型電荷転送撮像素子 |
| JP17492384 | 1984-08-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8502270A true NL8502270A (nl) | 1986-03-17 |
Family
ID=15987075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8502270A NL8502270A (nl) | 1984-08-24 | 1985-08-16 | Ladingoverdracht beeldinrichting van het interlijn-type. |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4774586A (ja) |
| JP (1) | JPS6153766A (ja) |
| KR (1) | KR920010830B1 (ja) |
| DE (1) | DE3530222A1 (ja) |
| NL (1) | NL8502270A (ja) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR900007234B1 (ko) * | 1986-07-07 | 1990-10-05 | 가부시기가이샤 히다찌세이사구쇼 | 전하이송형 고체촬상소자 |
| JPS63148778A (ja) * | 1986-12-11 | 1988-06-21 | Sony Corp | 固体撮像素子 |
| US4847692A (en) * | 1987-01-26 | 1989-07-11 | Fuji Photo Film Co., Ltd. | Solid-state image pickup device with CCDS in an interline transfer system and improved charge transfer electrode structure |
| JPH0773349B2 (ja) * | 1987-03-13 | 1995-08-02 | 日本電気株式会社 | 二次元ｃｃｄ撮像素子の駆動方法 |
| JPH0773348B2 (ja) * | 1987-03-13 | 1995-08-02 | 日本電気株式会社 | 二次元ｃｃｄ撮像素子の駆動方法 |
| US5028970A (en) * | 1987-10-14 | 1991-07-02 | Fuji Photo Film Co., Ltd. | Image sensor |
| JPH01106676A (ja) * | 1987-10-20 | 1989-04-24 | Mitsubishi Electric Corp | 固体イメージセンサ |
| JPH01106677A (ja) * | 1987-10-20 | 1989-04-24 | Sony Corp | 電荷転送素子の出力回路 |
| US5286669A (en) * | 1989-07-06 | 1994-02-15 | Kabushiki Kaisha Toshiba | Solid-state imaging device and method of manufacturing the same |
| US5194751A (en) * | 1989-07-17 | 1993-03-16 | Sony Corporation | Structure of solid-state image sensing devices |
| US5528643A (en) * | 1989-11-13 | 1996-06-18 | Texas Instruments Incorporated | Charge coupled device/charge super sweep image system and method for making |
| US5182623A (en) * | 1989-11-13 | 1993-01-26 | Texas Instruments Incorporated | Charge coupled device/charge super sweep image system and method for making |
| US5210433A (en) * | 1990-02-26 | 1993-05-11 | Kabushiki Kaisha Toshiba | Solid-state CCD imaging device with transfer gap voltage controller |
| US5216489A (en) * | 1990-03-02 | 1993-06-01 | Sony Corporation | Solid state image sensor |
| US5040071A (en) * | 1990-03-21 | 1991-08-13 | Eastman Kodak Company | Image sensor having multiple horizontal shift registers |
| CA2052148A1 (en) * | 1990-09-27 | 1992-03-28 | Tadashi Sugiki | Method of driving a solid-state imaging device |
| JP2703416B2 (ja) * | 1991-03-29 | 1998-01-26 | シャープ株式会社 | インターライン転送型ｃｃｄ撮像装置の駆動方法 |
| JP3120465B2 (ja) * | 1991-04-15 | 2000-12-25 | ソニー株式会社 | 固体撮像素子 |
| US5256891A (en) * | 1991-06-07 | 1993-10-26 | Eastman Kodak Company | CCD electrode structure for image sensors |
| JPH0514816A (ja) * | 1991-06-28 | 1993-01-22 | Sharp Corp | 固体撮像装置およびその駆動方法 |
| JP3560990B2 (ja) * | 1993-06-30 | 2004-09-02 | 株式会社東芝 | 固体撮像装置 |
| EP0692146B1 (en) * | 1994-01-31 | 1999-12-15 | Scientific Imaging Technologies, Inc. | Charge-coupled device array for spectroscopic detection |
| US5432335A (en) * | 1994-03-14 | 1995-07-11 | Princeton Instruments, Inc. | Charge-coupled device for spectroscopic detection |
| US5786852A (en) * | 1994-06-20 | 1998-07-28 | Canon Kabushiki Kaisha | Image pick-up apparatus having an image sensing device including a photoelectric conversion part and a vertical transfer part |
| US5614950A (en) * | 1995-08-02 | 1997-03-25 | Lg Semicon Co., Ltd. | CCD image sensor and method of preventing a smear phenomenon in the sensor |
| JPH09200605A (ja) * | 1996-01-12 | 1997-07-31 | Sanyo Electric Co Ltd | ディジタルビデオカメラ |
| KR100259084B1 (ko) * | 1997-07-25 | 2000-06-15 | 김영환 | 고체촬상소자및이의제조방법 |
| KR100487501B1 (ko) * | 1997-09-25 | 2005-08-04 | 삼성전자주식회사 | 고체촬상장치 |
| EP1017230B1 (en) * | 1998-12-28 | 2010-02-10 | SANYO ELECTRIC Co., Ltd. | Imaging apparatus and digital camera |
| US7038723B1 (en) * | 1999-04-26 | 2006-05-02 | Matsushita Electric Industrial Co., Ltd. | Solid state imaging device, method for driving the same and camera using the same |
| KR100662502B1 (ko) * | 2000-12-30 | 2007-01-02 | 매그나칩 반도체 유한회사 | 고체 촬상 소자 |
| US7554590B2 (en) * | 2003-02-26 | 2009-06-30 | Digital Imaging Systems Gmbh | Simultaneous readout of CMOS APS imagers |
| JP2007295365A (ja) * | 2006-04-26 | 2007-11-08 | Sanyo Electric Co Ltd | 固体撮像素子の駆動方法 |
| TWI319677B (en) * | 2006-10-20 | 2010-01-11 | Quanta Comp Inc | Method for displaying stereoscopic image and display system thereof |
| JP5730030B2 (ja) * | 2011-01-17 | 2015-06-03 | 浜松ホトニクス株式会社 | 固体撮像装置 |
| US8878256B2 (en) | 2013-01-07 | 2014-11-04 | Semiconductor Components Industries, Llc | Image sensors with multiple output structures |
| US8878255B2 (en) | 2013-01-07 | 2014-11-04 | Semiconductor Components Industries, Llc | Image sensors with multiple output structures |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL187288C (nl) * | 1980-02-19 | 1991-08-01 | Philips Nv | Ladingsgekoppelde beeldopneeminrichting en werkwijze ter vervaardiging daarvan. |
| NL8000998A (nl) * | 1980-02-19 | 1981-09-16 | Philips Nv | Vaste stof opneemcamera met een halfgeleidende photogevoelige trefplaat. |
| JPS5875382A (ja) * | 1981-07-20 | 1983-05-07 | Sony Corp | 固体撮像装置 |
| JPS5831669A (ja) * | 1981-08-20 | 1983-02-24 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
| JPS58138187A (ja) * | 1982-02-12 | 1983-08-16 | Toshiba Corp | 固体イメ−ジセンサ |
| JPS5984575A (ja) * | 1982-11-08 | 1984-05-16 | Hitachi Ltd | 固体撮像素子 |
| FR2553920B1 (fr) * | 1983-10-21 | 1985-12-13 | Thomson Csf | Procede d'analyse d'un dispositif photosensible a structure interligne et dispositif pour sa mise en oeuvre |
| JPS60142683A (ja) * | 1983-12-28 | 1985-07-27 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
| US4620231A (en) * | 1984-06-18 | 1986-10-28 | Rca Corporation | CCD imager with photodetector bias introduced via the CCD register |
| US4689687A (en) * | 1984-11-13 | 1987-08-25 | Hitachi, Ltd. | Charge transfer type solid-state imaging device |
| US4656519A (en) * | 1985-10-04 | 1987-04-07 | Rca Corporation | Back-illuminated CCD imagers of interline transfer type |
-
1984
- 1984-08-24 JP JP59174923A patent/JPS6153766A/ja active Granted
-
1985
- 1985-08-16 NL NL8502270A patent/NL8502270A/nl not_active Application Discontinuation
- 1985-08-21 US US06/768,113 patent/US4774586A/en not_active Expired - Lifetime
- 1985-08-23 KR KR1019850006102A patent/KR920010830B1/ko not_active IP Right Cessation
- 1985-08-23 DE DE19853530222 patent/DE3530222A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| KR920010830B1 (ko) | 1992-12-17 |
| JPS6153766A (ja) | 1986-03-17 |
| DE3530222A1 (de) | 1986-03-06 |
| KR860002151A (ko) | 1986-03-26 |
| JPH0578946B2 (ja) | 1993-10-29 |
| DE3530222C2 (ja) | 1988-09-15 |
| US4774586A (en) | 1988-09-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| NL8502270A (nl) | Ladingoverdracht beeldinrichting van het interlijn-type. | |
| US4322753A (en) | Smear and/or blooming in a solid state charge transfer image pickup device | |
| US7053948B2 (en) | Solid-state image pickup device with discharge gate operable in an arbitrary timing | |
| US4032976A (en) | Smear reduction in ccd imagers | |
| US4697200A (en) | Field storage drive in interline transfer CCD image sensor | |
| JPS6115475A (ja) | 撮像素子及び撮像装置 | |
| JPH0118629B2 (ja) | ||
| JPS6369267A (ja) | 固体撮像装置の駆動方法 | |
| US4794279A (en) | A solid state imaging device which applies two separate storage voltages for the signal charges so as to reduce the smear level and the dark current | |
| US5280186A (en) | CCD image sensor with four phase clocking mechanism | |
| KR100274077B1 (ko) | 고체촬상장치 | |
| AU607724B2 (en) | Charge-coupled device | |
| US4675887A (en) | Solid state imaging device and method with row-by-row charge transfer | |
| JP2944251B2 (ja) | 固体撮像装置 | |
| US5812192A (en) | Solid state imaging apparatus having a channel stop section for forming a transfer channel between first and second transfer sections in a horizontal transfer register | |
| US6825879B1 (en) | Solid-state image sensing device and method of driving the same | |
| US6552747B1 (en) | Solid state image pickup device | |
| JPH0446504B2 (ja) | ||
| EP0668691A1 (en) | Charge coupled imaging device and camera provided with such an imaging device | |
| US4604652A (en) | CCD imagers with pixels at least thirty microns long in the direction of charge transfer | |
| JP3273080B2 (ja) | 固体撮像装置 | |
| US5283633A (en) | Solid state image pickup device in which picture elements of green are generated in vertical charge transfer paths | |
| JP2820019B2 (ja) | 固体撮像素子 | |
| JPH06268923A (ja) | 固体撮像装置の駆動方法 | |
| JP2513177B2 (ja) | 固体撮像素子 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1A | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BV | The patent application has lapsed |