NL8403932A - Geintegreerde schakeling met kapaciteiten van verschillende kapaciteitswaarden. - Google Patents

Geintegreerde schakeling met kapaciteiten van verschillende kapaciteitswaarden. Download PDF

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Publication number
NL8403932A
NL8403932A NL8403932A NL8403932A NL8403932A NL 8403932 A NL8403932 A NL 8403932A NL 8403932 A NL8403932 A NL 8403932A NL 8403932 A NL8403932 A NL 8403932A NL 8403932 A NL8403932 A NL 8403932A
Authority
NL
Netherlands
Prior art keywords
capacities
capacitance
matrix
rows
row
Prior art date
Application number
NL8403932A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8403932A priority Critical patent/NL8403932A/nl
Priority to DE8585202045T priority patent/DE3582231D1/de
Priority to EP85202045A priority patent/EP0186239B1/en
Priority to CA000498366A priority patent/CA1241454A/en
Priority to CN85109668A priority patent/CN1003067B/zh
Priority to JP60289558A priority patent/JPS61156851A/ja
Publication of NL8403932A publication Critical patent/NL8403932A/nl
Priority to US07/263,992 priority patent/US4929998A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/06—Continuously compensating for, or preventing, undesired influence of physical parameters
    • H03M1/0617—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence
    • H03M1/0675—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence using redundancy
    • H03M1/0678—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence using redundancy using additional components or elements, e.g. dummy components
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/66—Digital/analogue converters
    • H03M1/74—Simultaneous conversion
    • H03M1/80—Simultaneous conversion using weighted impedances
    • H03M1/802—Simultaneous conversion using weighted impedances using capacitors, e.g. neuron-mos transistors, charge coupled devices
    • H03M1/804—Simultaneous conversion using weighted impedances using capacitors, e.g. neuron-mos transistors, charge coupled devices with charge redistribution
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/925—Bridge rectifier module

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Compression, Expansion, Code Conversion, And Decoders (AREA)
NL8403932A 1984-12-24 1984-12-24 Geintegreerde schakeling met kapaciteiten van verschillende kapaciteitswaarden. NL8403932A (nl)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NL8403932A NL8403932A (nl) 1984-12-24 1984-12-24 Geintegreerde schakeling met kapaciteiten van verschillende kapaciteitswaarden.
DE8585202045T DE3582231D1 (de) 1984-12-24 1985-12-11 Integrierte schaltung die kapazitaeten mit verschiedenen werten enthaelt.
EP85202045A EP0186239B1 (en) 1984-12-24 1985-12-11 Integrated circuit comprising capacitances of different capacitance values
CA000498366A CA1241454A (en) 1984-12-24 1985-12-20 Integrated circuit comprising capacitances of different capacitance values
CN85109668A CN1003067B (zh) 1984-12-24 1985-12-21 含有各种不同容量电容的集成电路
JP60289558A JPS61156851A (ja) 1984-12-24 1985-12-24 集積回路
US07/263,992 US4929998A (en) 1984-12-24 1988-10-25 Integrated circuit having plural capacitances of different values

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8403932A NL8403932A (nl) 1984-12-24 1984-12-24 Geintegreerde schakeling met kapaciteiten van verschillende kapaciteitswaarden.
NL8403932 1984-12-24

Publications (1)

Publication Number Publication Date
NL8403932A true NL8403932A (nl) 1986-07-16

Family

ID=19844966

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8403932A NL8403932A (nl) 1984-12-24 1984-12-24 Geintegreerde schakeling met kapaciteiten van verschillende kapaciteitswaarden.

Country Status (7)

Country Link
US (1) US4929998A (enExample)
EP (1) EP0186239B1 (enExample)
JP (1) JPS61156851A (enExample)
CN (1) CN1003067B (enExample)
CA (1) CA1241454A (enExample)
DE (1) DE3582231D1 (enExample)
NL (1) NL8403932A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2245419A (en) * 1990-06-20 1992-01-02 Philips Electronic Associated Ratioed capacitances in integrated circuits
FR2714528B1 (fr) * 1993-12-27 1996-03-15 Sgs Thomson Microelectronics Structure de test de circuit intégré.
DE69509851T2 (de) * 1994-09-30 1999-09-30 Sharp K.K., Osaka Kapazitätserzeugungsverfahren
JP3182079B2 (ja) * 1996-05-30 2001-07-03 住友金属工業株式会社 半導体装置の容量素子の配線構造
WO2001059843A1 (en) * 2000-02-10 2001-08-16 Conexant Systems, Inc. An improved capacitor in semiconductor chips
EP1182778A1 (en) * 2000-07-21 2002-02-27 Semiconductor Ideas to The Market (ItoM) BV Receiver comprising a digitally controlled capacitor bank
US6980414B1 (en) 2004-06-16 2005-12-27 Marvell International, Ltd. Capacitor structure in a semiconductor device
US8169014B2 (en) * 2006-01-09 2012-05-01 Taiwan Semiconductor Manufacturing Co., Ltd. Interdigitated capacitive structure for an integrated circuit
EP1863090A1 (en) 2006-06-01 2007-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9177909B2 (en) 2013-08-14 2015-11-03 United Microelectronics Corp. Semiconductor capacitor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58103163A (ja) * 1981-12-16 1983-06-20 Hitachi Ltd 容量素子

Also Published As

Publication number Publication date
JPS61156851A (ja) 1986-07-16
CN85109668A (zh) 1986-06-10
US4929998A (en) 1990-05-29
CA1241454A (en) 1988-08-30
CN1003067B (zh) 1989-01-11
EP0186239A1 (en) 1986-07-02
EP0186239B1 (en) 1991-03-20
DE3582231D1 (de) 1991-04-25
JPH0455342B2 (enExample) 1992-09-03

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A1B A search report has been drawn up
BV The patent application has lapsed