NL8403932A - Geintegreerde schakeling met kapaciteiten van verschillende kapaciteitswaarden. - Google Patents
Geintegreerde schakeling met kapaciteiten van verschillende kapaciteitswaarden. Download PDFInfo
- Publication number
- NL8403932A NL8403932A NL8403932A NL8403932A NL8403932A NL 8403932 A NL8403932 A NL 8403932A NL 8403932 A NL8403932 A NL 8403932A NL 8403932 A NL8403932 A NL 8403932A NL 8403932 A NL8403932 A NL 8403932A
- Authority
- NL
- Netherlands
- Prior art keywords
- capacities
- capacitance
- matrix
- rows
- row
- Prior art date
Links
- 239000004020 conductor Substances 0.000 claims description 116
- 239000011159 matrix material Substances 0.000 claims description 102
- 239000004065 semiconductor Substances 0.000 claims description 28
- 239000003990 capacitor Substances 0.000 claims description 5
- 230000036961 partial effect Effects 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 108091006146 Channels Proteins 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/06—Continuously compensating for, or preventing, undesired influence of physical parameters
- H03M1/0617—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence
- H03M1/0675—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence using redundancy
- H03M1/0678—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence using redundancy using additional components or elements, e.g. dummy components
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/66—Digital/analogue converters
- H03M1/74—Simultaneous conversion
- H03M1/80—Simultaneous conversion using weighted impedances
- H03M1/802—Simultaneous conversion using weighted impedances using capacitors, e.g. neuron-mos transistors, charge coupled devices
- H03M1/804—Simultaneous conversion using weighted impedances using capacitors, e.g. neuron-mos transistors, charge coupled devices with charge redistribution
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/925—Bridge rectifier module
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Compression, Expansion, Code Conversion, And Decoders (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8403932A NL8403932A (nl) | 1984-12-24 | 1984-12-24 | Geintegreerde schakeling met kapaciteiten van verschillende kapaciteitswaarden. |
| DE8585202045T DE3582231D1 (de) | 1984-12-24 | 1985-12-11 | Integrierte schaltung die kapazitaeten mit verschiedenen werten enthaelt. |
| EP85202045A EP0186239B1 (en) | 1984-12-24 | 1985-12-11 | Integrated circuit comprising capacitances of different capacitance values |
| CA000498366A CA1241454A (en) | 1984-12-24 | 1985-12-20 | Integrated circuit comprising capacitances of different capacitance values |
| CN85109668A CN1003067B (zh) | 1984-12-24 | 1985-12-21 | 含有各种不同容量电容的集成电路 |
| JP60289558A JPS61156851A (ja) | 1984-12-24 | 1985-12-24 | 集積回路 |
| US07/263,992 US4929998A (en) | 1984-12-24 | 1988-10-25 | Integrated circuit having plural capacitances of different values |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8403932A NL8403932A (nl) | 1984-12-24 | 1984-12-24 | Geintegreerde schakeling met kapaciteiten van verschillende kapaciteitswaarden. |
| NL8403932 | 1984-12-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8403932A true NL8403932A (nl) | 1986-07-16 |
Family
ID=19844966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8403932A NL8403932A (nl) | 1984-12-24 | 1984-12-24 | Geintegreerde schakeling met kapaciteiten van verschillende kapaciteitswaarden. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4929998A (enExample) |
| EP (1) | EP0186239B1 (enExample) |
| JP (1) | JPS61156851A (enExample) |
| CN (1) | CN1003067B (enExample) |
| CA (1) | CA1241454A (enExample) |
| DE (1) | DE3582231D1 (enExample) |
| NL (1) | NL8403932A (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2245419A (en) * | 1990-06-20 | 1992-01-02 | Philips Electronic Associated | Ratioed capacitances in integrated circuits |
| FR2714528B1 (fr) * | 1993-12-27 | 1996-03-15 | Sgs Thomson Microelectronics | Structure de test de circuit intégré. |
| EP0704904B1 (en) * | 1994-09-30 | 1999-05-26 | Yozan Inc. | Capacitance forming method |
| JP3182079B2 (ja) * | 1996-05-30 | 2001-07-03 | 住友金属工業株式会社 | 半導体装置の容量素子の配線構造 |
| WO2001059843A1 (en) * | 2000-02-10 | 2001-08-16 | Conexant Systems, Inc. | An improved capacitor in semiconductor chips |
| EP1182778A1 (en) * | 2000-07-21 | 2002-02-27 | Semiconductor Ideas to The Market (ItoM) BV | Receiver comprising a digitally controlled capacitor bank |
| US6980414B1 (en) | 2004-06-16 | 2005-12-27 | Marvell International, Ltd. | Capacitor structure in a semiconductor device |
| US8169014B2 (en) * | 2006-01-09 | 2012-05-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interdigitated capacitive structure for an integrated circuit |
| EP1863090A1 (en) | 2006-06-01 | 2007-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US9177909B2 (en) | 2013-08-14 | 2015-11-03 | United Microelectronics Corp. | Semiconductor capacitor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58103163A (ja) * | 1981-12-16 | 1983-06-20 | Hitachi Ltd | 容量素子 |
-
1984
- 1984-12-24 NL NL8403932A patent/NL8403932A/nl not_active Application Discontinuation
-
1985
- 1985-12-11 EP EP85202045A patent/EP0186239B1/en not_active Expired
- 1985-12-11 DE DE8585202045T patent/DE3582231D1/de not_active Expired - Lifetime
- 1985-12-20 CA CA000498366A patent/CA1241454A/en not_active Expired
- 1985-12-21 CN CN85109668A patent/CN1003067B/zh not_active Expired
- 1985-12-24 JP JP60289558A patent/JPS61156851A/ja active Granted
-
1988
- 1988-10-25 US US07/263,992 patent/US4929998A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CA1241454A (en) | 1988-08-30 |
| DE3582231D1 (de) | 1991-04-25 |
| JPH0455342B2 (enExample) | 1992-09-03 |
| JPS61156851A (ja) | 1986-07-16 |
| CN1003067B (zh) | 1989-01-11 |
| EP0186239A1 (en) | 1986-07-02 |
| CN85109668A (zh) | 1986-06-10 |
| US4929998A (en) | 1990-05-29 |
| EP0186239B1 (en) | 1991-03-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| BV | The patent application has lapsed |