CN1003067B - 含有各种不同容量电容的集成电路 - Google Patents

含有各种不同容量电容的集成电路 Download PDF

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Publication number
CN1003067B
CN1003067B CN85109668A CN85109668A CN1003067B CN 1003067 B CN1003067 B CN 1003067B CN 85109668 A CN85109668 A CN 85109668A CN 85109668 A CN85109668 A CN 85109668A CN 1003067 B CN1003067 B CN 1003067B
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CN
China
Prior art keywords
electrodes
capacitors
basic
capacitor
matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CN85109668A
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English (en)
Chinese (zh)
Other versions
CN85109668A (zh
Inventor
阿诺尔达斯.约翰尼斯.朱莉安娜.布德威赞斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of CN85109668A publication Critical patent/CN85109668A/zh
Publication of CN1003067B publication Critical patent/CN1003067B/zh
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/06—Continuously compensating for, or preventing, undesired influence of physical parameters
    • H03M1/0617—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence
    • H03M1/0675—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence using redundancy
    • H03M1/0678—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence using redundancy using additional components or elements, e.g. dummy components
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/66—Digital/analogue converters
    • H03M1/74—Simultaneous conversion
    • H03M1/80—Simultaneous conversion using weighted impedances
    • H03M1/802—Simultaneous conversion using weighted impedances using capacitors, e.g. neuron-mos transistors, charge coupled devices
    • H03M1/804—Simultaneous conversion using weighted impedances using capacitors, e.g. neuron-mos transistors, charge coupled devices with charge redistribution
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/925—Bridge rectifier module

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Compression, Expansion, Code Conversion, And Decoders (AREA)
CN85109668A 1984-12-24 1985-12-21 含有各种不同容量电容的集成电路 Expired CN1003067B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8403932A NL8403932A (nl) 1984-12-24 1984-12-24 Geintegreerde schakeling met kapaciteiten van verschillende kapaciteitswaarden.
NL8403932 1984-12-24

Publications (2)

Publication Number Publication Date
CN85109668A CN85109668A (zh) 1986-06-10
CN1003067B true CN1003067B (zh) 1989-01-11

Family

ID=19844966

Family Applications (1)

Application Number Title Priority Date Filing Date
CN85109668A Expired CN1003067B (zh) 1984-12-24 1985-12-21 含有各种不同容量电容的集成电路

Country Status (7)

Country Link
US (1) US4929998A (enExample)
EP (1) EP0186239B1 (enExample)
JP (1) JPS61156851A (enExample)
CN (1) CN1003067B (enExample)
CA (1) CA1241454A (enExample)
DE (1) DE3582231D1 (enExample)
NL (1) NL8403932A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2245419A (en) * 1990-06-20 1992-01-02 Philips Electronic Associated Ratioed capacitances in integrated circuits
FR2714528B1 (fr) * 1993-12-27 1996-03-15 Sgs Thomson Microelectronics Structure de test de circuit intégré.
EP0704904B1 (en) * 1994-09-30 1999-05-26 Yozan Inc. Capacitance forming method
JP3182079B2 (ja) * 1996-05-30 2001-07-03 住友金属工業株式会社 半導体装置の容量素子の配線構造
WO2001059843A1 (en) * 2000-02-10 2001-08-16 Conexant Systems, Inc. An improved capacitor in semiconductor chips
EP1182778A1 (en) * 2000-07-21 2002-02-27 Semiconductor Ideas to The Market (ItoM) BV Receiver comprising a digitally controlled capacitor bank
US6980414B1 (en) 2004-06-16 2005-12-27 Marvell International, Ltd. Capacitor structure in a semiconductor device
US8169014B2 (en) * 2006-01-09 2012-05-01 Taiwan Semiconductor Manufacturing Co., Ltd. Interdigitated capacitive structure for an integrated circuit
EP1863090A1 (en) 2006-06-01 2007-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9177909B2 (en) 2013-08-14 2015-11-03 United Microelectronics Corp. Semiconductor capacitor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58103163A (ja) * 1981-12-16 1983-06-20 Hitachi Ltd 容量素子

Also Published As

Publication number Publication date
CA1241454A (en) 1988-08-30
DE3582231D1 (de) 1991-04-25
JPH0455342B2 (enExample) 1992-09-03
JPS61156851A (ja) 1986-07-16
NL8403932A (nl) 1986-07-16
EP0186239A1 (en) 1986-07-02
CN85109668A (zh) 1986-06-10
US4929998A (en) 1990-05-29
EP0186239B1 (en) 1991-03-20

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C14 Grant of patent or utility model
GR01 Patent grant
C53 Correction of patent of invention or patent application
COR Change of bibliographic data

Free format text: CORRECT: PATENTEE; FROM: N.V. PHILIPS OPTICAL LAMP MANUFACTURING COMPANY TO: N.V. PHILIPS OPTICALLAMP LTD., CO.

CP01 Change in the name or title of a patent holder

Patentee after: Philips Electronics N. V.

Patentee before: N.V. Philips' Gloeipenfabrieken

C53 Correction of patent of invention or patent application
COR Change of bibliographic data

Free format text: CORRECT: PATENTEE; FROM: N.V. PHILIPS OPTICAL LAMP LTD., CO. TO: ROYAL PHILIPS ELECTRONICS CO., LTD.

CP01 Change in the name or title of a patent holder

Patentee after: Koninklike Philips Electronics N. V.

Patentee before: Philips Electronics N. V.

C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee