DE3582231D1 - Integrierte schaltung die kapazitaeten mit verschiedenen werten enthaelt. - Google Patents

Integrierte schaltung die kapazitaeten mit verschiedenen werten enthaelt.

Info

Publication number
DE3582231D1
DE3582231D1 DE8585202045T DE3582231T DE3582231D1 DE 3582231 D1 DE3582231 D1 DE 3582231D1 DE 8585202045 T DE8585202045 T DE 8585202045T DE 3582231 T DE3582231 T DE 3582231T DE 3582231 D1 DE3582231 D1 DE 3582231D1
Authority
DE
Germany
Prior art keywords
capacitances
integrated circuit
basic
rows
different values
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585202045T
Other languages
German (de)
English (en)
Inventor
Arnoldus Johannes J Boudewijns
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3582231D1 publication Critical patent/DE3582231D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/06—Continuously compensating for, or preventing, undesired influence of physical parameters
    • H03M1/0617—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence
    • H03M1/0675—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence using redundancy
    • H03M1/0678—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence using redundancy using additional components or elements, e.g. dummy components
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/66—Digital/analogue converters
    • H03M1/74—Simultaneous conversion
    • H03M1/80—Simultaneous conversion using weighted impedances
    • H03M1/802—Simultaneous conversion using weighted impedances using capacitors, e.g. neuron-mos transistors, charge coupled devices
    • H03M1/804—Simultaneous conversion using weighted impedances using capacitors, e.g. neuron-mos transistors, charge coupled devices with charge redistribution
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/925—Bridge rectifier module

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Compression, Expansion, Code Conversion, And Decoders (AREA)
DE8585202045T 1984-12-24 1985-12-11 Integrierte schaltung die kapazitaeten mit verschiedenen werten enthaelt. Expired - Lifetime DE3582231D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8403932A NL8403932A (nl) 1984-12-24 1984-12-24 Geintegreerde schakeling met kapaciteiten van verschillende kapaciteitswaarden.

Publications (1)

Publication Number Publication Date
DE3582231D1 true DE3582231D1 (de) 1991-04-25

Family

ID=19844966

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585202045T Expired - Lifetime DE3582231D1 (de) 1984-12-24 1985-12-11 Integrierte schaltung die kapazitaeten mit verschiedenen werten enthaelt.

Country Status (7)

Country Link
US (1) US4929998A (enExample)
EP (1) EP0186239B1 (enExample)
JP (1) JPS61156851A (enExample)
CN (1) CN1003067B (enExample)
CA (1) CA1241454A (enExample)
DE (1) DE3582231D1 (enExample)
NL (1) NL8403932A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2245419A (en) * 1990-06-20 1992-01-02 Philips Electronic Associated Ratioed capacitances in integrated circuits
FR2714528B1 (fr) * 1993-12-27 1996-03-15 Sgs Thomson Microelectronics Structure de test de circuit intégré.
EP0704904B1 (en) * 1994-09-30 1999-05-26 Yozan Inc. Capacitance forming method
JP3182079B2 (ja) * 1996-05-30 2001-07-03 住友金属工業株式会社 半導体装置の容量素子の配線構造
WO2001059843A1 (en) * 2000-02-10 2001-08-16 Conexant Systems, Inc. An improved capacitor in semiconductor chips
EP1182778A1 (en) * 2000-07-21 2002-02-27 Semiconductor Ideas to The Market (ItoM) BV Receiver comprising a digitally controlled capacitor bank
US6980414B1 (en) 2004-06-16 2005-12-27 Marvell International, Ltd. Capacitor structure in a semiconductor device
US8169014B2 (en) * 2006-01-09 2012-05-01 Taiwan Semiconductor Manufacturing Co., Ltd. Interdigitated capacitive structure for an integrated circuit
EP1863090A1 (en) 2006-06-01 2007-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9177909B2 (en) 2013-08-14 2015-11-03 United Microelectronics Corp. Semiconductor capacitor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58103163A (ja) * 1981-12-16 1983-06-20 Hitachi Ltd 容量素子

Also Published As

Publication number Publication date
CA1241454A (en) 1988-08-30
JPH0455342B2 (enExample) 1992-09-03
JPS61156851A (ja) 1986-07-16
CN1003067B (zh) 1989-01-11
NL8403932A (nl) 1986-07-16
EP0186239A1 (en) 1986-07-02
CN85109668A (zh) 1986-06-10
US4929998A (en) 1990-05-29
EP0186239B1 (en) 1991-03-20

Similar Documents

Publication Publication Date Title
DE3574777D1 (de) Hochspannungsgeraet.
DE59005864D1 (de) Spannungsvervielfacherschaltung.
FI853410L (fi) Kopplingsanordning.
DE3687579D1 (de) Elektrisch veraenderbarer piezoelektrischer hybrid-kondensator.
DE3873148D1 (de) Spannungshochniveaudetektionsanordnung in der mos-technologie.
BR7401876D0 (pt) Estrutura de circuito integrado com isolamento dieletrico total e processo de fabrica-la
FI860812A0 (fi) Foerfarande foer att testa funktionen hos en adaptiv ekoeliminerare.
IT8019554A0 (it) Polidiorganosilossani elettricamente conduttivi.
DE3582231D1 (de) Integrierte schaltung die kapazitaeten mit verschiedenen werten enthaelt.
DE3672748D1 (de) Spannungsmultipliziererschaltung.
DE3586040D1 (de) Praezisionskondensator vom mos-typ hohen wertes.
GB8410040D0 (en) Electric double layer capacitor
DE3381727D1 (de) Elektrisch leitfaehiger zusammengesetzter kunststoff.
BE887643A (fr) Circuit integre comportant plusieurs convertisseurs tensio-courant
IT8519727A0 (it) Complessi del platino (iv)antineoplastici.
DE3575495D1 (de) In eine elektronenroehre eingebauter widerstand.
DE3581094D1 (de) Logische addierschaltung.
IT8026733A0 (it) Disposizione per montare circuiti integrati in contenitori a doppia fila di connettori a circuiti a pellicola spessa sottile.
FI852164L (fi) Kopplingsanordning.
DE3577967D1 (de) Modul-schaltkreis.
DE3362933D1 (en) Detector matting
IT8022717A0 (it) Struttura circuitale per la conversione del livello di tensione.
DE3485573D1 (de) Spannungsbegrenzungsschaltung mit niedriger impedanz.
BR8505150A (pt) Canhao eletronico tendo um dispositivo de eltrodo com grande auxiliar de duas pecas
DE3650170D1 (de) Halbleiteranordnung mit Verbindungselektroden.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee