NL8402488A - Halfgeleider geheugenelement. - Google Patents

Halfgeleider geheugenelement. Download PDF

Info

Publication number
NL8402488A
NL8402488A NL8402488A NL8402488A NL8402488A NL 8402488 A NL8402488 A NL 8402488A NL 8402488 A NL8402488 A NL 8402488A NL 8402488 A NL8402488 A NL 8402488A NL 8402488 A NL8402488 A NL 8402488A
Authority
NL
Netherlands
Prior art keywords
write
information
input
mosfets
memory cell
Prior art date
Application number
NL8402488A
Other languages
English (en)
Dutch (nl)
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of NL8402488A publication Critical patent/NL8402488A/nl

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
NL8402488A 1983-08-17 1984-08-13 Halfgeleider geheugenelement. NL8402488A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58151263A JPS6043296A (ja) 1983-08-17 1983-08-17 半導体記憶装置
JP15126383 1983-08-17

Publications (1)

Publication Number Publication Date
NL8402488A true NL8402488A (nl) 1985-03-18

Family

ID=15514835

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8402488A NL8402488A (nl) 1983-08-17 1984-08-13 Halfgeleider geheugenelement.

Country Status (4)

Country Link
US (1) US4638461A (cs)
JP (1) JPS6043296A (cs)
DE (1) DE3430144A1 (cs)
NL (1) NL8402488A (cs)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3514430A1 (de) * 1985-04-20 1986-10-23 Sartorius GmbH, 3400 Göttingen Verfahren zum abspeichern von daten in einem elektrisch loeschbaren speicher und elektrisch loeschbarer speicher zur durchfuehrung des verfahrens
NL8602450A (nl) * 1986-09-29 1988-04-18 Philips Nv Geintegreerde geheugenschakeling met een enkelvoudige-schrijfbus circuit.
JP2569554B2 (ja) * 1987-05-13 1997-01-08 三菱電機株式会社 ダイナミツクram
JP2572607B2 (ja) * 1987-09-25 1997-01-16 セイコーエプソン株式会社 半導体記憶装置
US4975877A (en) * 1988-10-20 1990-12-04 Logic Devices Incorporated Static semiconductor memory with improved write recovery and column address circuitry
US4995001A (en) * 1988-10-31 1991-02-19 International Business Machines Corporation Memory cell and read circuit
JPH0329189A (ja) * 1989-06-26 1991-02-07 Nec Corp スタテイックランダムアクセスメモリ
KR100208142B1 (ko) * 1990-09-26 1999-07-15 가나이 쓰도무 반도체 메모리
KR920008763A (ko) * 1990-10-16 1992-05-28 김광호 스테어틱 램의 데이터 라인 등화회로 및 등화방법
JPH04360095A (ja) * 1991-06-06 1992-12-14 Nec Corp 半導体記憶回路

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4300213A (en) * 1978-11-24 1981-11-10 Hitachi, Ltd. Memory circuit with increased operating speed
EP0114492A2 (en) * 1982-12-22 1984-08-01 Fujitsu Limited Semiconductor memory device having active pull-up circuits

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2455315B1 (fr) * 1979-04-23 1986-10-24 Anvar Procede pour fournir un resultat de calcul numerique avec le nombre de chiffres significatifs exacts dans ce resultat et dispositif de calcul numerique mettant en oeuvre ce procede
GB2070372B (en) * 1980-01-31 1983-09-28 Tokyo Shibaura Electric Co Semiconductor memory device
JPS6027114B2 (ja) * 1980-07-24 1985-06-27 日本電気株式会社 メモリ装置
JPS581883A (ja) * 1981-06-25 1983-01-07 Fujitsu Ltd 低電力スタチツクram
JPS5853083A (ja) * 1981-09-25 1983-03-29 Nec Corp 半導体集積回路

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4300213A (en) * 1978-11-24 1981-11-10 Hitachi, Ltd. Memory circuit with increased operating speed
EP0114492A2 (en) * 1982-12-22 1984-08-01 Fujitsu Limited Semiconductor memory device having active pull-up circuits

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SCHLAGETER ET AL: "A 4K Static 5-V RAM", IEEE INTERNATIONAL SOLID STATE CIRCUITS CONFERENCE, 19 February 1976 (1976-02-19), NEW YORK US, pages 136 - 137 *

Also Published As

Publication number Publication date
JPS6043296A (ja) 1985-03-07
JPH0447397B2 (cs) 1992-08-03
US4638461A (en) 1987-01-20
DE3430144A1 (de) 1985-03-07

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BV The patent application has lapsed