NL8303441A - Geintegreerde schakeling met komplementaire veldeffekttransistors. - Google Patents
Geintegreerde schakeling met komplementaire veldeffekttransistors. Download PDFInfo
- Publication number
- NL8303441A NL8303441A NL8303441A NL8303441A NL8303441A NL 8303441 A NL8303441 A NL 8303441A NL 8303441 A NL8303441 A NL 8303441A NL 8303441 A NL8303441 A NL 8303441A NL 8303441 A NL8303441 A NL 8303441A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- field effect
- channel
- gate electrode
- integrated circuit
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title claims description 67
- 230000000295 complement effect Effects 0.000 title description 6
- 239000010410 layer Substances 0.000 claims description 123
- 239000004065 semiconductor Substances 0.000 claims description 67
- 239000000758 substrate Substances 0.000 claims description 42
- 239000002344 surface layer Substances 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 27
- 229910021332 silicide Inorganic materials 0.000 claims description 16
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 15
- 230000007704 transition Effects 0.000 claims description 11
- 239000012212 insulator Substances 0.000 claims 1
- 238000002513 implantation Methods 0.000 description 31
- 230000000694 effects Effects 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 229910052796 boron Inorganic materials 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 9
- 230000035515 penetration Effects 0.000 description 8
- -1 phosphorus ions Chemical class 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 235000002566 Capsicum Nutrition 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 206010067482 No adverse event Diseases 0.000 description 1
- 239000006002 Pepper Substances 0.000 description 1
- 235000016761 Piper aduncum Nutrition 0.000 description 1
- 235000017804 Piper guineense Nutrition 0.000 description 1
- 244000203593 Piper nigrum Species 0.000 description 1
- 235000008184 Piper nigrum Nutrition 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 235000005911 diet Nutrition 0.000 description 1
- 230000000378 dietary effect Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000012636 effector Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000009424 underpinning Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8303441A NL8303441A (nl) | 1983-10-07 | 1983-10-07 | Geintegreerde schakeling met komplementaire veldeffekttransistors. |
| EP84201417A EP0137564B1 (fr) | 1983-10-07 | 1984-10-04 | Circuit intégré comprenant des transistors à effet de champ complémentaires |
| DE8484201417T DE3474379D1 (en) | 1983-10-07 | 1984-10-04 | Integrated circuit comprising complementary field effect transistors |
| JP59209947A JPS6097663A (ja) | 1983-10-07 | 1984-10-08 | 集積回路 |
| US07/119,291 US4799092A (en) | 1983-10-07 | 1987-11-05 | Integrated circuit comprising complementary field effect transistors |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8303441A NL8303441A (nl) | 1983-10-07 | 1983-10-07 | Geintegreerde schakeling met komplementaire veldeffekttransistors. |
| NL8303441 | 1983-10-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8303441A true NL8303441A (nl) | 1985-05-01 |
Family
ID=19842514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8303441A NL8303441A (nl) | 1983-10-07 | 1983-10-07 | Geintegreerde schakeling met komplementaire veldeffekttransistors. |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4799092A (fr) |
| EP (1) | EP0137564B1 (fr) |
| JP (1) | JPS6097663A (fr) |
| DE (1) | DE3474379D1 (fr) |
| NL (1) | NL8303441A (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH065745B2 (ja) * | 1986-07-31 | 1994-01-19 | 株式会社日立製作所 | 半導体装置 |
| US5489794A (en) * | 1992-05-22 | 1996-02-06 | Seiko Instruments Inc. | Semiconductor device |
| JP3271982B2 (ja) * | 1993-02-23 | 2002-04-08 | サンダーバード テクノロジーズ インコーポレイテッド | 電界効果トランジスタ |
| US5698884A (en) * | 1996-02-07 | 1997-12-16 | Thunderbird Technologies, Inc. | Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same |
| US6136656A (en) * | 1998-10-22 | 2000-10-24 | International Business Machines Corporation | Method to create a depleted poly MOSFET |
| US7741935B2 (en) * | 2008-02-15 | 2010-06-22 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | High voltage isolation semiconductor capacitor digital communication device and corresponding package |
| US7741896B2 (en) * | 2008-02-15 | 2010-06-22 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | High voltage drive circuit employing capacitive signal coupling and associated devices and methods |
| US8188814B2 (en) * | 2008-02-15 | 2012-05-29 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | High voltage isolation dual capacitor communication system |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3673471A (en) * | 1970-10-08 | 1972-06-27 | Fairchild Camera Instr Co | Doped semiconductor electrodes for mos type devices |
| JPS504989A (fr) * | 1973-05-16 | 1975-01-20 | ||
| US3868274A (en) * | 1974-01-02 | 1975-02-25 | Gen Instrument Corp | Method for fabricating MOS devices with a multiplicity of thresholds on a semiconductor substrate |
| GB1476192A (en) * | 1974-05-29 | 1977-06-10 | Mullard Ltd | Semiconductor switching circuit arrangements |
| JPS5915189B2 (ja) * | 1976-02-23 | 1984-04-07 | ソニー株式会社 | 半導体装置の製造方法 |
| JPS52143782A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Construction of complementary mis-ic and its production |
| US4178605A (en) * | 1978-01-30 | 1979-12-11 | Rca Corp. | Complementary MOS inverter structure |
| US4472871A (en) * | 1978-09-21 | 1984-09-25 | Mostek Corporation | Method of making a plurality of MOSFETs having different threshold voltages |
| JPS5586160A (en) * | 1978-12-23 | 1980-06-28 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS6043025B2 (ja) * | 1979-12-28 | 1985-09-26 | 富士通株式会社 | 半導体装置の製造方法 |
| JPS5772376A (en) * | 1980-10-24 | 1982-05-06 | Hitachi Ltd | Protective circuit device for semiconductor |
| JPS5791553A (en) * | 1980-11-29 | 1982-06-07 | Toshiba Corp | Semiconductor device |
| US4684971A (en) * | 1981-03-13 | 1987-08-04 | American Telephone And Telegraph Company, At&T Bell Laboratories | Ion implanted CMOS devices |
| US4476482A (en) * | 1981-05-29 | 1984-10-09 | Texas Instruments Incorporated | Silicide contacts for CMOS devices |
| JPS587853A (ja) * | 1981-07-06 | 1983-01-17 | Seiko Epson Corp | 半導体集積回路 |
| JPS5817656A (ja) * | 1981-07-24 | 1983-02-01 | Hitachi Ltd | 半導体装置の製造方法 |
| JPS5887858A (ja) * | 1981-11-20 | 1983-05-25 | Hitachi Ltd | 相補型絶縁ゲ−ト電界効果半導体装置 |
| JPS594067A (ja) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | 半導体装置 |
-
1983
- 1983-10-07 NL NL8303441A patent/NL8303441A/nl not_active Application Discontinuation
-
1984
- 1984-10-04 EP EP84201417A patent/EP0137564B1/fr not_active Expired
- 1984-10-04 DE DE8484201417T patent/DE3474379D1/de not_active Expired
- 1984-10-08 JP JP59209947A patent/JPS6097663A/ja active Granted
-
1987
- 1987-11-05 US US07/119,291 patent/US4799092A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE3474379D1 (en) | 1988-11-03 |
| EP0137564B1 (fr) | 1988-09-28 |
| EP0137564A3 (en) | 1985-05-22 |
| US4799092A (en) | 1989-01-17 |
| JPS6097663A (ja) | 1985-05-31 |
| JPH0321101B2 (fr) | 1991-03-20 |
| EP0137564A2 (fr) | 1985-04-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5899732A (en) | Method of implanting silicon through a polysilicon gate for punchthrough control of a semiconductor device | |
| EP0809865B1 (fr) | DISPOSITIF A EFFET DE CHAMP ET A SEMI-CONDUCTEURS COMPORTANT UNE COUCHE DE SiGe | |
| US5852310A (en) | Multi-level transistor fabrication method with a patterned upper transistor substrate and interconnection thereto | |
| NL8802219A (nl) | Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een siliciumlichaam waarin door ionenimplantaties halfgeleidergebieden worden gevormd. | |
| US5439831A (en) | Low junction leakage MOSFETs | |
| EP1058303A1 (fr) | Fabrication d'une structure VDMOS ayant des effets parasites réduits | |
| EP0305513B1 (fr) | Dispositif de substrat isolant/cmos a faible fuite et procede de formation | |
| KR100304678B1 (ko) | 배선을형성한후에수소이온으로문턱전압을변경시키는것이가능한전계효과트랜지스터를구비한반도체장치제조방법 | |
| WO1998047171A1 (fr) | Procede de regulation de concentration d'impuretes par l'implantation d'atomes getter | |
| US4466171A (en) | Method of manufacturing a semiconductor device utilizing outdiffusion to convert an epitaxial layer | |
| NL8202686A (nl) | Werkwijze ter vervaardiging van een veldeffektinrichting met geisoleerde stuurelektrode, en inrichting vervaardigd volgens de werkwijze. | |
| US4859630A (en) | Method of manufacturing a semiconductor device | |
| NL8303441A (nl) | Geintegreerde schakeling met komplementaire veldeffekttransistors. | |
| US4362574A (en) | Integrated circuit and manufacturing method | |
| NL8302383A (nl) | Werkwijze ter vervaardiging van een halfgeleiderinrichting, en halfgeleiderinrichting vervaardigd volgens de werkwijze. | |
| US5486487A (en) | Method for adjusting the threshold of a read-only memory to achieve low capacitance and high breakdown voltage | |
| US5107320A (en) | Method and apparatus for improvement of interconnection capacitance | |
| KR100201246B1 (ko) | 반도체 장치 및 그 제조 방법 | |
| US5780347A (en) | Method of forming polysilicon local interconnects | |
| US5973381A (en) | MOS capacitor and MOS capacitor fabrication method | |
| US5512508A (en) | Method and apparatus for improvement of interconnection capacitance | |
| US5977598A (en) | High load resistance implemented in a separate polysilicon layer with diffusion barrier therein for preventing load punch through therefrom | |
| EP0880165A1 (fr) | Procédé de fabrication d'un circuit intégré avec des transistors MOS ayant de hauts voltages de claquage et avec des résistances de précision | |
| US6780685B1 (en) | Semiconductor device and manufacturing method thereof | |
| EP0412405A2 (fr) | Procédé et appareil pour améliorer la capacité de l'interconnexion |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| BV | The patent application has lapsed |