DE3474379D1 - Integrated circuit comprising complementary field effect transistors - Google Patents

Integrated circuit comprising complementary field effect transistors

Info

Publication number
DE3474379D1
DE3474379D1 DE8484201417T DE3474379T DE3474379D1 DE 3474379 D1 DE3474379 D1 DE 3474379D1 DE 8484201417 T DE8484201417 T DE 8484201417T DE 3474379 T DE3474379 T DE 3474379T DE 3474379 D1 DE3474379 D1 DE 3474379D1
Authority
DE
Germany
Prior art keywords
integrated circuit
field effect
effect transistors
complementary field
complementary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484201417T
Other languages
English (en)
Inventor
Francois Marinus Klaassen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3474379D1 publication Critical patent/DE3474379D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
DE8484201417T 1983-10-07 1984-10-04 Integrated circuit comprising complementary field effect transistors Expired DE3474379D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8303441A NL8303441A (nl) 1983-10-07 1983-10-07 Geintegreerde schakeling met komplementaire veldeffekttransistors.

Publications (1)

Publication Number Publication Date
DE3474379D1 true DE3474379D1 (en) 1988-11-03

Family

ID=19842514

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484201417T Expired DE3474379D1 (en) 1983-10-07 1984-10-04 Integrated circuit comprising complementary field effect transistors

Country Status (5)

Country Link
US (1) US4799092A (de)
EP (1) EP0137564B1 (de)
JP (1) JPS6097663A (de)
DE (1) DE3474379D1 (de)
NL (1) NL8303441A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH065745B2 (ja) * 1986-07-31 1994-01-19 株式会社日立製作所 半導体装置
US5489794A (en) * 1992-05-22 1996-02-06 Seiko Instruments Inc. Semiconductor device
JP3271982B2 (ja) * 1993-02-23 2002-04-08 サンダーバード テクノロジーズ インコーポレイテッド 電界効果トランジスタ
US5698884A (en) * 1996-02-07 1997-12-16 Thunderbird Technologies, Inc. Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same
US6136656A (en) * 1998-10-22 2000-10-24 International Business Machines Corporation Method to create a depleted poly MOSFET
US7741935B2 (en) * 2008-02-15 2010-06-22 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. High voltage isolation semiconductor capacitor digital communication device and corresponding package
US7741896B2 (en) * 2008-02-15 2010-06-22 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. High voltage drive circuit employing capacitive signal coupling and associated devices and methods
US8188814B2 (en) * 2008-02-15 2012-05-29 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. High voltage isolation dual capacitor communication system

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673471A (en) * 1970-10-08 1972-06-27 Fairchild Camera Instr Co Doped semiconductor electrodes for mos type devices
JPS504989A (de) * 1973-05-16 1975-01-20
US3868274A (en) * 1974-01-02 1975-02-25 Gen Instrument Corp Method for fabricating MOS devices with a multiplicity of thresholds on a semiconductor substrate
GB1476192A (en) * 1974-05-29 1977-06-10 Mullard Ltd Semiconductor switching circuit arrangements
JPS5915189B2 (ja) * 1976-02-23 1984-04-07 ソニー株式会社 半導体装置の製造方法
JPS52143782A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Construction of complementary mis-ic and its production
US4178605A (en) * 1978-01-30 1979-12-11 Rca Corp. Complementary MOS inverter structure
US4472871A (en) * 1978-09-21 1984-09-25 Mostek Corporation Method of making a plurality of MOSFETs having different threshold voltages
JPS5586160A (en) * 1978-12-23 1980-06-28 Fujitsu Ltd Manufacture of semiconductor device
JPS6043025B2 (ja) * 1979-12-28 1985-09-26 富士通株式会社 半導体装置の製造方法
JPS5772376A (en) * 1980-10-24 1982-05-06 Hitachi Ltd Protective circuit device for semiconductor
JPS5791553A (en) * 1980-11-29 1982-06-07 Toshiba Corp Semiconductor device
US4684971A (en) * 1981-03-13 1987-08-04 American Telephone And Telegraph Company, At&T Bell Laboratories Ion implanted CMOS devices
US4476482A (en) * 1981-05-29 1984-10-09 Texas Instruments Incorporated Silicide contacts for CMOS devices
JPS587853A (ja) * 1981-07-06 1983-01-17 Seiko Epson Corp 半導体集積回路
JPS5817656A (ja) * 1981-07-24 1983-02-01 Hitachi Ltd 半導体装置の製造方法
JPS5887858A (ja) * 1981-11-20 1983-05-25 Hitachi Ltd 相補型絶縁ゲ−ト電界効果半導体装置
JPS594067A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置

Also Published As

Publication number Publication date
NL8303441A (nl) 1985-05-01
EP0137564B1 (de) 1988-09-28
EP0137564A3 (en) 1985-05-22
US4799092A (en) 1989-01-17
JPS6097663A (ja) 1985-05-31
JPH0321101B2 (de) 1991-03-20
EP0137564A2 (de) 1985-04-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee