NL8100020A - Zelfregenererende condensator geheugencel. - Google Patents

Zelfregenererende condensator geheugencel. Download PDF

Info

Publication number
NL8100020A
NL8100020A NL8100020A NL8100020A NL8100020A NL 8100020 A NL8100020 A NL 8100020A NL 8100020 A NL8100020 A NL 8100020A NL 8100020 A NL8100020 A NL 8100020A NL 8100020 A NL8100020 A NL 8100020A
Authority
NL
Netherlands
Prior art keywords
capacitor
terminal
transistor
voltage
mos
Prior art date
Application number
NL8100020A
Other languages
English (en)
Dutch (nl)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of NL8100020A publication Critical patent/NL8100020A/nl

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/402Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
NL8100020A 1980-01-07 1981-01-06 Zelfregenererende condensator geheugencel. NL8100020A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/109,777 US4292677A (en) 1980-01-07 1980-01-07 Self-refreshed capacitor memory cell
US10977780 1980-01-07

Publications (1)

Publication Number Publication Date
NL8100020A true NL8100020A (nl) 1981-08-03

Family

ID=22329511

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8100020A NL8100020A (nl) 1980-01-07 1981-01-06 Zelfregenererende condensator geheugencel.

Country Status (12)

Country Link
US (1) US4292677A (US07829113-20101109-C00009.png)
JP (1) JPS56101695A (US07829113-20101109-C00009.png)
BE (1) BE886964A (US07829113-20101109-C00009.png)
CA (1) CA1135853A (US07829113-20101109-C00009.png)
DD (1) DD156857A5 (US07829113-20101109-C00009.png)
DE (1) DE3100129A1 (US07829113-20101109-C00009.png)
ES (1) ES498280A0 (US07829113-20101109-C00009.png)
FR (1) FR2474742A1 (US07829113-20101109-C00009.png)
GB (1) GB2067867B (US07829113-20101109-C00009.png)
IT (1) IT1134949B (US07829113-20101109-C00009.png)
NL (1) NL8100020A (US07829113-20101109-C00009.png)
SE (1) SE8009001L (US07829113-20101109-C00009.png)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4413329A (en) * 1980-12-24 1983-11-01 International Business Machines Corporation Dynamic memory cell
DE3235835A1 (de) * 1982-09-28 1984-03-29 Siemens AG, 1000 Berlin und 8000 München Halbleiter-speicherzelle
US5003361A (en) * 1987-08-31 1991-03-26 At&T Bell Laboratories Active dynamic memory cell
EP1131824B1 (de) 1998-09-30 2003-03-12 Infineon Technologies AG Single-port speicherzelle
US6768668B2 (en) * 2001-06-12 2004-07-27 Infineon Technologies Aktiengesellschaft Converting volatile memory to non-volatile memory
US6686729B1 (en) 2002-10-15 2004-02-03 Texas Instruments Incorporated DC/DC switching regulator having reduced switching loss

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4030083A (en) * 1975-04-04 1977-06-14 Bell Telephone Laboratories, Incorporated Self-refreshed capacitor memory cell
US4122550A (en) * 1978-02-08 1978-10-24 Intel Corporation Low power random access memory with self-refreshing cells
US4203159A (en) * 1978-10-05 1980-05-13 Wanlass Frank M Pseudostatic electronic memory

Also Published As

Publication number Publication date
ES8205074A1 (es) 1982-06-01
GB2067867A (en) 1981-07-30
ES498280A0 (es) 1982-06-01
BE886964A (fr) 1981-05-04
DD156857A5 (de) 1982-09-22
FR2474742B1 (US07829113-20101109-C00009.png) 1984-01-27
GB2067867B (en) 1983-10-26
IT8119020A0 (it) 1981-01-06
US4292677A (en) 1981-09-29
FR2474742A1 (fr) 1981-07-31
SE8009001L (sv) 1981-07-08
CA1135853A (en) 1982-11-16
DE3100129A1 (de) 1981-11-19
JPS56101695A (en) 1981-08-14
IT1134949B (it) 1986-08-20

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Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
BV The patent application has lapsed