NL7010204A - - Google Patents

Info

Publication number
NL7010204A
NL7010204A NL7010204A NL7010204A NL7010204A NL 7010204 A NL7010204 A NL 7010204A NL 7010204 A NL7010204 A NL 7010204A NL 7010204 A NL7010204 A NL 7010204A NL 7010204 A NL7010204 A NL 7010204A
Authority
NL
Netherlands
Application number
NL7010204A
Other versions
NL170902B (nl
NL170902C (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NLAANVRAGE7010204,A priority Critical patent/NL170902C/xx
Application filed filed Critical
Priority to GB3184471A priority patent/GB1360243A/en
Priority to SE08804/71A priority patent/SE368479B/xx
Priority to CA117580A priority patent/CA926029A/en
Priority to CH1000871A priority patent/CH535496A/de
Priority to GB3184571A priority patent/GB1353997A/en
Priority to CH1000771A priority patent/CH533364A/de
Priority to CH1001371A priority patent/CH542517A/de
Priority to GB3183971A priority patent/GB1364676A/en
Priority to CA117,581A priority patent/CA1102012A/en
Priority to GB1028374A priority patent/GB1364677A/en
Priority to SE08805/71A priority patent/SE368480B/xx
Priority to DE2133982A priority patent/DE2133982C2/de
Priority to DE2133976A priority patent/DE2133976C3/de
Priority to ES393040A priority patent/ES393040A1/es
Priority to BE769735A priority patent/BE769735A/xx
Priority to ES393035A priority patent/ES393035A1/es
Priority to DE19712133981 priority patent/DE2133981C3/de
Priority to ES393041A priority patent/ES393041A1/es
Priority to AT594371A priority patent/AT351596B/de
Priority to BE769734A priority patent/BE769734A/xx
Priority to BE769729A priority patent/BE769729A/xx
Priority to FR7125293A priority patent/FR2098319B1/fr
Priority to FR7125299A priority patent/FR2098325B1/fr
Priority to FR7125298A priority patent/FR2098324B1/fr
Priority to JP46050730A priority patent/JPS4945629B1/ja
Priority to JP46050732A priority patent/JPS5010101B1/ja
Priority to JP46050731A priority patent/JPS517550B1/ja
Priority to BR4395/71A priority patent/BR7104395D0/pt
Publication of NL7010204A publication Critical patent/NL7010204A/xx
Priority to HK593/72*UA priority patent/HK59376A/xx
Priority to HK585/76*UA priority patent/HK58576A/xx
Priority to HK590/76*UA priority patent/HK59076A/xx
Priority to HK594/76*UA priority patent/HK59476A/xx
Publication of NL170902B publication Critical patent/NL170902B/xx
Application granted granted Critical
Publication of NL170902C publication Critical patent/NL170902C/xx
Priority to US07/021,563 priority patent/US4903109A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0121—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] in regions recessed from the surface, e.g. in trenches or grooves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H10W10/0126—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment
NLAANVRAGE7010204,A 1970-07-10 1970-07-10 Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling. NL170902C (nl)

Priority Applications (34)

Application Number Priority Date Filing Date Title
NLAANVRAGE7010204,A NL170902C (nl) 1970-07-10 1970-07-10 Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling.
SE08804/71A SE368479B (enExample) 1970-07-10 1971-07-07
CA117580A CA926029A (en) 1970-07-10 1971-07-07 Semiconductor device having a transistor
CH1000871A CH535496A (de) 1970-07-10 1971-07-07 Monolithische, integrierte Schaltung
GB3184471A GB1360243A (en) 1970-07-10 1971-07-07 Semiconductor devices
CH1000771A CH533364A (de) 1970-07-10 1971-07-07 Monolitische, intergrierte Schaltung
CH1001371A CH542517A (de) 1970-07-10 1971-07-07 Halbleitervorrichtung mit einem Transistor und Verfahren zur Herstellung der Halbleitervorrichtung
GB3183971A GB1364676A (en) 1970-07-10 1971-07-07 Semiconductor integrated device
CA117,581A CA1102012A (en) 1970-07-10 1971-07-07 Semiconductor device, in particular integrated monolithic circuit, and method of manufacturing same
GB1028374A GB1364677A (en) 1970-07-10 1971-07-07 Semiconductor devices and methods of making semiconductor devices
SE08805/71A SE368480B (enExample) 1970-07-10 1971-07-07
GB3184571A GB1353997A (en) 1970-07-10 1971-07-07 Semiconductor integrated devices
DE19712133981 DE2133981C3 (de) 1970-07-10 1971-07-08 Halbleiterbauelement mit einem Halbleiterkörper mit einem Transistor und Verfahren zu seiner Herstellung
ES393040A ES393040A1 (es) 1970-07-10 1971-07-08 Un dispositivo semiconductor.
BE769735A BE769735A (fr) 1970-07-10 1971-07-08 Dispositif semiconducteur, en particulier circuit monolithique integre,et procede de fabrication de ce dispositif
ES393035A ES393035A1 (es) 1970-07-10 1971-07-08 Un dispositivo semiconductor.
DE2133982A DE2133982C2 (de) 1970-07-10 1971-07-08 Integriertes Halbleiterbauelement mit einer von einer vergrabenen Schicht gebildeten leitenden Verbindung
ES393041A ES393041A1 (es) 1970-07-10 1971-07-08 Un dispositivo semiconductor.
AT594371A AT351596B (de) 1970-07-10 1971-07-08 Halbleiteranordnung, insbesondere monolithische integrierte schaltung mit von zum teil durch eine versenkte isolierschicht gebildete isolierzonen umgebenen inseln
BE769734A BE769734A (fr) 1970-07-10 1971-07-08 Dispositif semiconducteur comportant un transistor
BE769729A BE769729A (fr) 1970-07-10 1971-07-08 Dispositif semiconducteur, en particulier un circuit integre monolithique et procede de fabrication de ce dispositif
DE2133976A DE2133976C3 (de) 1970-07-10 1971-07-08 Monolithisch integrierte Halbleiteranordnung
FR7125298A FR2098324B1 (enExample) 1970-07-10 1971-07-09
FR7125299A FR2098325B1 (enExample) 1970-07-10 1971-07-09
FR7125293A FR2098319B1 (enExample) 1970-07-10 1971-07-09
JP46050732A JPS5010101B1 (enExample) 1970-07-10 1971-07-10
JP46050731A JPS517550B1 (enExample) 1970-07-10 1971-07-10
JP46050730A JPS4945629B1 (enExample) 1970-07-10 1971-07-10
BR4395/71A BR7104395D0 (pt) 1970-07-10 1971-07-12 Dispositivo semicondutor mais especialmente um circuito integrado monolitico
HK593/72*UA HK59376A (en) 1970-07-10 1976-09-23 Semiconductor integrated device
HK585/76*UA HK58576A (en) 1970-07-10 1976-09-23 Improvements in and relating to semiconductor integrated devices
HK590/76*UA HK59076A (en) 1970-07-10 1976-09-23 Improvements in and relating to semiconductor devices
HK594/76*UA HK59476A (en) 1970-07-10 1976-09-23 Semiconductor devices and methods of making semiconductor devices
US07/021,563 US4903109A (en) 1970-07-10 1987-03-02 Semiconductor devices having local oxide isolation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7010204,A NL170902C (nl) 1970-07-10 1970-07-10 Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling.

Publications (3)

Publication Number Publication Date
NL7010204A true NL7010204A (enExample) 1972-01-12
NL170902B NL170902B (nl) 1982-08-02
NL170902C NL170902C (nl) 1983-01-03

Family

ID=19810544

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7010204,A NL170902C (nl) 1970-07-10 1970-07-10 Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling.

Country Status (11)

Country Link
US (1) US4903109A (enExample)
JP (1) JPS4945629B1 (enExample)
BE (1) BE769729A (enExample)
BR (1) BR7104395D0 (enExample)
CH (1) CH535496A (enExample)
DE (1) DE2133976C3 (enExample)
ES (1) ES393035A1 (enExample)
FR (1) FR2098319B1 (enExample)
GB (1) GB1364676A (enExample)
HK (2) HK59476A (enExample)
NL (1) NL170902C (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6093620A (en) * 1971-02-02 2000-07-25 National Semiconductor Corporation Method of fabricating integrated circuits with oxidized isolation

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT979178B (it) * 1972-05-11 1974-09-30 Ibm Resistore per dispositivi a circuito integrato
DE2235865A1 (de) * 1972-07-21 1974-01-31 Licentia Gmbh Halbleiteranordnung aus einer vielzahl von in einem gemeinsamen halbleiterkoerper untergebrachten halbleiterbauelementen
JPS598065B2 (ja) * 1976-01-30 1984-02-22 松下電子工業株式会社 Ｍｏｓ集積回路の製造方法
DE2708639A1 (de) * 1977-02-28 1978-08-31 Siemens Ag Transistoranordnung auf einem halbleiterplaettchen
FR2480036A1 (fr) * 1980-04-04 1981-10-09 Thomson Csf Structure de dispositif a semi-conducteur a anneau de garde et a fonctionnement unipolaire
JPS5931052A (ja) * 1982-08-13 1984-02-18 Hitachi Ltd 半導体集積回路装置の製造方法
US5290396A (en) * 1991-06-06 1994-03-01 Lsi Logic Corporation Trench planarization techniques
US5413966A (en) * 1990-12-20 1995-05-09 Lsi Logic Corporation Shallow trench etch
US5248625A (en) * 1991-06-06 1993-09-28 Lsi Logic Corporation Techniques for forming isolation structures
US5252503A (en) * 1991-06-06 1993-10-12 Lsi Logic Corporation Techniques for forming isolation structures
US5225358A (en) * 1991-06-06 1993-07-06 Lsi Logic Corporation Method of forming late isolation with polishing
JP3979661B2 (ja) * 1994-04-15 2007-09-19 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体素子と電気的に接触する導体パターンを設けた支持バーによる装置の製造方法
US5783470A (en) * 1995-12-14 1998-07-21 Lsi Logic Corporation Method of making CMOS dynamic random-access memory structures and the like
KR100456691B1 (ko) * 2002-03-05 2004-11-10 삼성전자주식회사 이중격리구조를 갖는 반도체 소자 및 그 제조방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1077851A (en) * 1962-05-28 1967-08-02 Ultra Electronics Ltd Transistors
US3254277A (en) * 1963-02-27 1966-05-31 United Aircraft Corp Integrated circuit with component defining groove
US3386865A (en) * 1965-05-10 1968-06-04 Ibm Process of making planar semiconductor devices isolated by encapsulating oxide filled channels
US3442011A (en) * 1965-06-30 1969-05-06 Texas Instruments Inc Method for isolating individual devices in an integrated circuit monolithic bar
US3615929A (en) * 1965-07-08 1971-10-26 Texas Instruments Inc Method of forming epitaxial region of predetermined thickness and article of manufacture
NL153374B (nl) * 1966-10-05 1977-05-16 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een oxydelaag en halfgeleiderinrichting vervaardigd volgens de werkwijze.
US3481801A (en) * 1966-10-10 1969-12-02 Frances Hugle Isolation technique for integrated circuits
US3534234A (en) * 1966-12-15 1970-10-13 Texas Instruments Inc Modified planar process for making semiconductor devices having ultrafine mesa type geometry
US3653988A (en) * 1968-02-05 1972-04-04 Bell Telephone Labor Inc Method of forming monolithic semiconductor integrated circuit devices
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6093620A (en) * 1971-02-02 2000-07-25 National Semiconductor Corporation Method of fabricating integrated circuits with oxidized isolation

Also Published As

Publication number Publication date
NL170902B (nl) 1982-08-02
HK59476A (en) 1976-10-01
HK59376A (en) 1976-10-01
FR2098319B1 (enExample) 1976-05-28
BR7104395D0 (pt) 1973-04-05
CH535496A (de) 1973-03-31
GB1364676A (en) 1974-08-29
DE2133976C3 (de) 1981-07-23
DE2133976A1 (de) 1972-01-13
NL170902C (nl) 1983-01-03
JPS4945629B1 (enExample) 1974-12-05
US4903109A (en) 1990-02-20
DE2133976B2 (de) 1979-07-12
ES393035A1 (es) 1973-08-16
FR2098319A1 (enExample) 1972-03-10
BE769729A (fr) 1972-01-10

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Legal Events

Date Code Title Description
V4 Discontinued because of reaching the maximum lifetime of a patent