NL2014314B1 - Proximity effect correction in a charged particle lithography system. - Google Patents

Proximity effect correction in a charged particle lithography system. Download PDF

Info

Publication number
NL2014314B1
NL2014314B1 NL2014314A NL2014314A NL2014314B1 NL 2014314 B1 NL2014314 B1 NL 2014314B1 NL 2014314 A NL2014314 A NL 2014314A NL 2014314 A NL2014314 A NL 2014314A NL 2014314 B1 NL2014314 B1 NL 2014314B1
Authority
NL
Netherlands
Prior art keywords
layout pattern
proximity effect
pattern
function
effect function
Prior art date
Application number
NL2014314A
Other languages
English (en)
Dutch (nl)
Other versions
NL2014314A (en
Inventor
Jan-Jaco Wieland Marco
Original Assignee
Mapper Lithography Ip Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithography Ip Bv filed Critical Mapper Lithography Ip Bv
Publication of NL2014314A publication Critical patent/NL2014314A/en
Application granted granted Critical
Publication of NL2014314B1 publication Critical patent/NL2014314B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
NL2014314A 2014-02-21 2015-02-19 Proximity effect correction in a charged particle lithography system. NL2014314B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201461942676P 2014-02-21 2014-02-21
US201461942676 2014-02-21

Publications (2)

Publication Number Publication Date
NL2014314A NL2014314A (en) 2015-08-26
NL2014314B1 true NL2014314B1 (en) 2016-07-19

Family

ID=52633557

Family Applications (1)

Application Number Title Priority Date Filing Date
NL2014314A NL2014314B1 (en) 2014-02-21 2015-02-19 Proximity effect correction in a charged particle lithography system.

Country Status (7)

Country Link
US (1) US9184026B2 (ko)
EP (1) EP3108495A1 (ko)
JP (2) JP2016512930A (ko)
KR (1) KR102403574B1 (ko)
NL (1) NL2014314B1 (ko)
RU (1) RU2691955C2 (ko)
WO (1) WO2015126246A1 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10410831B2 (en) 2015-05-12 2019-09-10 Ims Nanofabrication Gmbh Multi-beam writing using inclined exposure stripes
US10325756B2 (en) 2016-06-13 2019-06-18 Ims Nanofabrication Gmbh Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer
US10325757B2 (en) * 2017-01-27 2019-06-18 Ims Nanofabrication Gmbh Advanced dose-level quantization of multibeam-writers
US10522329B2 (en) 2017-08-25 2019-12-31 Ims Nanofabrication Gmbh Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus
US11569064B2 (en) 2017-09-18 2023-01-31 Ims Nanofabrication Gmbh Method for irradiating a target using restricted placement grids
US10651010B2 (en) 2018-01-09 2020-05-12 Ims Nanofabrication Gmbh Non-linear dose- and blur-dependent edge placement correction
US10840054B2 (en) 2018-01-30 2020-11-17 Ims Nanofabrication Gmbh Charged-particle source and method for cleaning a charged-particle source using back-sputtering
US11556058B2 (en) * 2018-10-31 2023-01-17 Taiwan Semiconductor Manufacturing Co., Ltd. Proximity effect correction in electron beam lithography
US11099482B2 (en) 2019-05-03 2021-08-24 Ims Nanofabrication Gmbh Adapting the duration of exposure slots in multi-beam writers
KR20210132599A (ko) 2020-04-24 2021-11-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0166549A2 (en) * 1984-06-21 1986-01-02 Varian Associates, Inc. Method for proximity effect correction in electron beam lithography systems
JP3469422B2 (ja) * 1996-02-23 2003-11-25 株式会社東芝 荷電ビーム描画方法及び描画装置
US5736281A (en) 1996-06-07 1998-04-07 Lucent Technologies Inc. Dose modification proximity effect compensation (PEC) technique for electron beam lithography
US5847959A (en) * 1997-01-28 1998-12-08 Etec Systems, Inc. Method and apparatus for run-time correction of proximity effects in pattern generation
JP2000012437A (ja) * 1998-06-24 2000-01-14 Oki Electric Ind Co Ltd 電子線描画方法
RU2243613C1 (ru) * 2003-07-16 2004-12-27 Гурович Борис Аронович Способ формирования объемной структуры
US7266800B2 (en) 2004-06-04 2007-09-04 Invarium, Inc. Method and system for designing manufacturable patterns that account for the pattern- and position-dependent nature of patterning processes
EP1612834A1 (en) 2004-06-29 2006-01-04 Leica Microsystems Lithography GmbH A process for controlling the proximity effect correction
US7256870B2 (en) 2005-02-01 2007-08-14 Asml Netherlands B.V. Method and apparatus for controlling iso-dense bias in lithography
US7487489B2 (en) 2005-02-28 2009-02-03 Yuri Granik Calculation system for inverse masks
US20110004856A1 (en) 2005-02-28 2011-01-06 Yuri Granik Inverse Mask Design and Correction for Electronic Design
JP4476975B2 (ja) * 2005-10-25 2010-06-09 株式会社ニューフレアテクノロジー 荷電粒子ビーム照射量演算方法、荷電粒子ビーム描画方法、プログラム及び荷電粒子ビーム描画装置
JP4976071B2 (ja) * 2006-02-21 2012-07-18 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
US7638247B2 (en) 2006-06-22 2009-12-29 Pdf Solutions, Inc. Method for electron beam proximity effect correction
JP4945380B2 (ja) * 2007-09-05 2012-06-06 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
DE102010004939A1 (de) 2010-01-18 2011-07-21 EQUIcon Software GmbH Jena, 07745 Verfahren zur Steuerung der Elektronenstrahl-Belichtung von Wafern und Masken mit Proximity-Korrektur
FR2959026B1 (fr) * 2010-04-15 2012-06-01 Commissariat Energie Atomique Procede de lithographie a optimisation combinee de l'energie rayonnee et de la geometrie de dessin
JP2012060054A (ja) * 2010-09-13 2012-03-22 Jeol Ltd 荷電粒子ビーム描画装置の描画方法及び荷電粒子ビーム描画装置
RU2462784C1 (ru) * 2011-03-31 2012-09-27 Государственное образовательное учреждение высшего профессионального образования "Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" Способ электронной литографии
KR102009536B1 (ko) * 2011-09-13 2019-08-09 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈 확률론적 방법에 의해 노광될 패턴에 대하여 디콘볼루션을 사용하여 전자 근접 효과를 보정 하기 위한 방법
TWI477925B (zh) * 2011-10-04 2015-03-21 Nuflare Technology Inc Multi - beam charged particle beam mapping device and multi - beam charged particle beam rendering method
JP2013232531A (ja) * 2012-04-27 2013-11-14 Canon Inc 描画装置及び物品の製造方法
JP6076708B2 (ja) * 2012-11-21 2017-02-08 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビームの照射量チェック方法

Also Published As

Publication number Publication date
US9184026B2 (en) 2015-11-10
US20150243481A1 (en) 2015-08-27
WO2015126246A1 (en) 2015-08-27
RU2691955C2 (ru) 2019-06-19
JP2016512930A (ja) 2016-05-09
NL2014314A (en) 2015-08-26
KR20160125442A (ko) 2016-10-31
EP3108495A1 (en) 2016-12-28
RU2016137484A (ru) 2018-03-26
JP2019009447A (ja) 2019-01-17
KR102403574B1 (ko) 2022-05-30
RU2016137484A3 (ko) 2018-06-18

Similar Documents

Publication Publication Date Title
NL2014314B1 (en) Proximity effect correction in a charged particle lithography system.
US8329365B2 (en) Method for design and manufacture of diagonal patterns with variable shaped beam lithography
KR101006676B1 (ko) 하전 입자 빔 묘화 장치 및 하전 입자 빔 묘화 방법
US10522329B2 (en) Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus
US9852885B2 (en) Charged particle beam writing method, and charged particle beam writing apparatus
TWI680489B (zh) 帶電粒子束裝置及帶電粒子束的位置偏差修正方法
EP3460824B1 (en) Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus
TWI661265B (zh) 使用多重射束帶電粒子束微影術於表面上形成圖案之方法
EP3264442B1 (en) Bias correction for lithography
US7476879B2 (en) Placement effects correction in raster pattern generator
JP2016207815A (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP7183315B2 (ja) マルチビーム描画機におけるブラー変化の補正
JP2022533790A (ja) 局所パターン密度に対する荷電粒子ビーム露光を判定するための方法とシステム
JP7167842B2 (ja) 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
JP7159970B2 (ja) 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
US9424372B1 (en) System and method for data path handling, shot count minimization, and proximity effects correction related to mask writing process
JP5871557B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5773637B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

Legal Events

Date Code Title Description
PD Change of ownership

Owner name: ASML NETHERLANDS B.V.; NL

Free format text: DETAILS ASSIGNMENT: CHANGE OF OWNER(S), ASSIGNMENT; FORMER OWNER NAME: MAPPER LITHOGRAPHY IP B.V.

Effective date: 20190425