NL2009982A - Source mask optimization to reduce stochastic effects. - Google Patents
Source mask optimization to reduce stochastic effects. Download PDFInfo
- Publication number
- NL2009982A NL2009982A NL2009982A NL2009982A NL2009982A NL 2009982 A NL2009982 A NL 2009982A NL 2009982 A NL2009982 A NL 2009982A NL 2009982 A NL2009982 A NL 2009982A NL 2009982 A NL2009982 A NL 2009982A
- Authority
- NL
- Netherlands
- Prior art keywords
- patterning device
- source
- optimization
- design
- radiation
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70125—Use of illumination settings tailored to particular mask patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- General Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Architecture (AREA)
- Software Systems (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261585136P | 2012-01-10 | 2012-01-10 | |
US201261585136 | 2012-01-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL2009982A true NL2009982A (en) | 2013-07-15 |
Family
ID=48744861
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL2009982A NL2009982A (en) | 2012-01-10 | 2012-12-13 | Source mask optimization to reduce stochastic effects. |
Country Status (5)
Country | Link |
---|---|
US (2) | US9213783B2 (ko) |
JP (1) | JP2013145880A (ko) |
KR (1) | KR101463100B1 (ko) |
NL (1) | NL2009982A (ko) |
TW (1) | TWI467321B (ko) |
Families Citing this family (63)
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NL2008311A (en) * | 2011-04-04 | 2012-10-08 | Asml Netherlands Bv | Integration of lithography apparatus and mask optimization process with multiple patterning process. |
NL2008957A (en) | 2011-07-08 | 2013-01-09 | Asml Netherlands Bv | Methods and systems for pattern design with tailored response to wavefront aberration. |
US9489479B2 (en) * | 2012-05-04 | 2016-11-08 | Asml Netherlands B.V. | Rule and lithographic process co-optimization |
CN105992975B (zh) * | 2014-02-11 | 2018-06-01 | Asml荷兰有限公司 | 用于计算任意图案的随机变化的模型 |
US9395622B2 (en) * | 2014-02-20 | 2016-07-19 | Globalfoundries Inc. | Synthesizing low mask error enhancement factor lithography solutions |
KR102146437B1 (ko) * | 2014-03-18 | 2020-08-21 | 에이에스엠엘 네델란즈 비.브이. | 패턴 배치 에러 인식의 최적화 |
US10025201B2 (en) * | 2014-04-14 | 2018-07-17 | Asml Netherlands B.V. | Flows of optimization for lithographic processes |
KR101901729B1 (ko) | 2014-05-02 | 2018-09-28 | 에이에스엠엘 네델란즈 비.브이. | 조밀 피처들의 핫스폿들의 감소 |
KR101939313B1 (ko) | 2014-06-25 | 2019-01-16 | 에이에스엠엘 네델란즈 비.브이. | 에칭 변동 감내 최적화 |
WO2016010776A1 (en) * | 2014-07-13 | 2016-01-21 | Kla-Tencor Corporation | Metrology using overlay and yield critical patterns |
KR102404639B1 (ko) * | 2015-02-02 | 2022-06-03 | 삼성전자주식회사 | 전자 빔 노광 방법 및 그를 포함하는 기판 제조 방법 |
TWI620980B (zh) | 2015-02-13 | 2018-04-11 | Asml荷蘭公司 | 影像對數斜率(ils)最佳化 |
CN107430351B (zh) * | 2015-03-16 | 2019-06-11 | Asml荷兰有限公司 | 用于确定抗蚀剂变形的方法 |
TWI571701B (zh) * | 2015-04-30 | 2017-02-21 | 力晶科技股份有限公司 | 偵測微影熱點的方法 |
KR20180072768A (ko) * | 2015-10-19 | 2018-06-29 | 에이에스엠엘 네델란즈 비.브이. | 패터닝 공정 오차를 보정하는 장치 및 방법 |
WO2017067748A1 (en) | 2015-10-19 | 2017-04-27 | Asml Netherlands B.V. | Method and apparatus to reduce effects of nonlinear behavior |
US10691863B2 (en) | 2015-10-19 | 2020-06-23 | Asml Netherlands B.V. | Method and apparatus to correct for patterning process error |
WO2017067757A1 (en) | 2015-10-19 | 2017-04-27 | Asml Netherlands B.V. | Method and apparatus to correct for patterning process error |
US10915689B2 (en) | 2015-10-19 | 2021-02-09 | Asml Netherlands B.V. | Method and apparatus to correct for patterning process error |
US10416566B2 (en) * | 2015-12-14 | 2019-09-17 | Asml Netherlands B.V. | Optimization of source and bandwidth for new and existing patterning devices |
CN112198762B (zh) | 2015-12-22 | 2023-09-19 | Asml荷兰有限公司 | 用于过程窗口表征的设备和方法 |
KR102148875B1 (ko) | 2015-12-31 | 2020-08-28 | 에이에스엠엘 네델란즈 비.브이. | 에칭-어시스트 피처 |
WO2017114662A1 (en) | 2015-12-31 | 2017-07-06 | Asml Netherlands B.V. | Selection of measurement locations for patterning processes |
WO2017162471A1 (en) | 2016-03-24 | 2017-09-28 | Asml Netherlands B.V. | Optimization of a lithographic projection apparatus accounting for an interlayer characteristic |
US10197908B2 (en) * | 2016-06-21 | 2019-02-05 | Lam Research Corporation | Photoresist design layout pattern proximity correction through fast edge placement error prediction via a physics-based etch profile modeling framework |
US10345714B2 (en) | 2016-07-12 | 2019-07-09 | Cymer, Llc | Lithography optics adjustment and monitoring |
TWI647528B (zh) | 2016-07-12 | 2019-01-11 | 荷蘭商Asml荷蘭公司 | 用於視覺化設計佈局之計算分析之效能度量的方法及系統 |
US10007191B2 (en) | 2016-07-15 | 2018-06-26 | Kla-Tencor Corporation | Method for computer modeling and simulation of negative-tone-developable photoresists |
WO2018033363A1 (en) | 2016-08-19 | 2018-02-22 | Asml Netherlands B.V. | Modeling post-exposure processes |
WO2018099742A1 (en) | 2016-12-02 | 2018-06-07 | Asml Netherlands B.V. | Model for estimating stochastic variation |
CN110121681B (zh) | 2016-12-28 | 2022-04-01 | Asml荷兰有限公司 | 在制造过程中引导过程模型和检查的方法 |
US11016395B2 (en) | 2016-12-28 | 2021-05-25 | Asml Netherlands B.V. | Methods of determining scattering of radiation by structures of finite thicknesses on a patterning device |
CN110325921B (zh) * | 2017-01-26 | 2022-02-18 | Asml荷兰有限公司 | 微调过程模型的方法 |
KR102449586B1 (ko) | 2017-02-24 | 2022-10-04 | 에이에스엠엘 네델란즈 비.브이. | 기계 학습에 의해 공정 모델들을 결정하는 방법들 |
TWI735747B (zh) | 2017-02-28 | 2021-08-11 | 美商克萊譚克公司 | 度量方法及模組,分段疊對目標,及電腦程式產品 |
US10262408B2 (en) * | 2017-04-12 | 2019-04-16 | Kla-Tencor Corporation | System, method and computer program product for systematic and stochastic characterization of pattern defects identified from a semiconductor wafer |
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EP3688529B1 (en) * | 2017-09-27 | 2023-12-13 | ASML Netherlands B.V. | Method of determining control parameters of a device manufacturing process |
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KR102440337B1 (ko) | 2017-12-22 | 2022-09-05 | 에이에스엠엘 네델란즈 비.브이. | 결함 확률에 기초한 프로세스 윈도우 |
US10572697B2 (en) | 2018-04-06 | 2020-02-25 | Lam Research Corporation | Method of etch model calibration using optical scatterometry |
CN111971551A (zh) | 2018-04-10 | 2020-11-20 | 朗姆研究公司 | 机器学习中的光学计量以表征特征 |
KR20200131342A (ko) | 2018-04-10 | 2020-11-23 | 램 리써치 코포레이션 | 레지스트 및 에칭 모델링 |
US10818001B2 (en) | 2018-09-07 | 2020-10-27 | Kla-Tencor Corporation | Using stochastic failure metrics in semiconductor manufacturing |
US11354484B2 (en) * | 2018-11-08 | 2022-06-07 | Asml Netherlands B.V. | Failure model for predicting failure due to resist layer |
EP3650940A1 (en) | 2018-11-09 | 2020-05-13 | ASML Netherlands B.V. | A method in the manufacturing process of a device, a non-transitory computer-readable medium and a system configured to perform the method |
KR102641682B1 (ko) | 2019-02-20 | 2024-02-27 | 에이에스엠엘 네델란즈 비.브이. | 반도체 디바이스의 제조 프로세스를 특성화하기 위한 방법 |
JP2022522433A (ja) * | 2019-02-25 | 2022-04-19 | アプライド マテリアルズ イスラエル リミテッド | 希少確率欠陥を検出するシステムおよび方法 |
US10990019B2 (en) | 2019-04-09 | 2021-04-27 | Kla Corporation | Stochastic reticle defect dispositioning |
US20220229374A1 (en) * | 2019-04-25 | 2022-07-21 | Asml Netherlans B.V. | Method of determining characteristic of patterning process based on defect for reducing hotspot |
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CN114514473A (zh) * | 2019-09-25 | 2022-05-17 | 美商新思科技有限公司 | 基于缺陷概率分布和关键尺寸变化的光刻改进 |
EP3822703A1 (en) | 2019-11-18 | 2021-05-19 | ASML Netherlands B.V. | Method for determining a field-of-view setting |
WO2021069153A1 (en) | 2019-10-08 | 2021-04-15 | Asml Netherlands B.V. | Method for determining a field-of-view setting |
US11119404B2 (en) * | 2019-10-10 | 2021-09-14 | Kla Corporation | System and method for reducing printable defects on extreme ultraviolet pattern masks |
KR20210069161A (ko) | 2019-12-02 | 2021-06-11 | 삼성전자주식회사 | Euv 레티클 제조 방법 및 그를 포함하는 반도체 소자의 제조 방법 |
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KR20230152037A (ko) | 2021-03-03 | 2023-11-02 | 에이에스엠엘 네델란즈 비.브이. | 패터닝 공정의 구성 |
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NL2005804A (en) * | 2010-01-14 | 2011-07-18 | Asml Netherlands Bv | Method and apparatus for enhancing signal strength for improved generation and placement of model-based sub-resolution assist features (mb-sraf). |
US8372565B2 (en) | 2010-08-31 | 2013-02-12 | International Business Machines Corporation | Method for optimizing source and mask to control line width roughness and image log slope |
NL2007577A (en) * | 2010-11-10 | 2012-05-14 | Asml Netherlands Bv | Optimization of source, mask and projection optics. |
-
2012
- 2012-12-13 NL NL2009982A patent/NL2009982A/en not_active Application Discontinuation
- 2012-12-17 JP JP2012274198A patent/JP2013145880A/ja active Pending
- 2012-12-18 US US13/719,135 patent/US9213783B2/en active Active
- 2012-12-27 TW TW101150666A patent/TWI467321B/zh active
-
2013
- 2013-01-09 KR KR1020130002470A patent/KR101463100B1/ko active IP Right Grant
-
2015
- 2015-12-14 US US14/968,561 patent/US9934346B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20130179847A1 (en) | 2013-07-11 |
KR20130082110A (ko) | 2013-07-18 |
US9213783B2 (en) | 2015-12-15 |
US20160110488A1 (en) | 2016-04-21 |
US9934346B2 (en) | 2018-04-03 |
KR101463100B1 (ko) | 2014-11-20 |
TW201333624A (zh) | 2013-08-16 |
JP2013145880A (ja) | 2013-07-25 |
TWI467321B (zh) | 2015-01-01 |
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