NL2003390C2 - Solar cell and method for manufacturing such a solar cell. - Google Patents
Solar cell and method for manufacturing such a solar cell. Download PDFInfo
- Publication number
- NL2003390C2 NL2003390C2 NL2003390A NL2003390A NL2003390C2 NL 2003390 C2 NL2003390 C2 NL 2003390C2 NL 2003390 A NL2003390 A NL 2003390A NL 2003390 A NL2003390 A NL 2003390A NL 2003390 C2 NL2003390 C2 NL 2003390C2
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- front surface
- conductivity type
- dopant
- textured
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 194
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000010410 layer Substances 0.000 claims description 223
- 239000002019 doping agent Substances 0.000 claims description 74
- 239000000758 substrate Substances 0.000 claims description 59
- 238000005530 etching Methods 0.000 claims description 52
- 238000009792 diffusion process Methods 0.000 claims description 45
- 239000004065 semiconductor Substances 0.000 claims description 34
- 239000002243 precursor Substances 0.000 claims description 28
- 239000011241 protective layer Substances 0.000 claims description 21
- 239000011521 glass Substances 0.000 claims description 13
- 238000005498 polishing Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000011247 coating layer Substances 0.000 claims description 6
- 229910004205 SiNX Inorganic materials 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000012705 liquid precursor Substances 0.000 claims description 2
- 238000007704 wet chemistry method Methods 0.000 claims description 2
- 229910018404 Al2 O3 Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- 239000003795 chemical substances by application Substances 0.000 description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 239000011574 phosphorus Substances 0.000 description 10
- 229910052698 phosphorus Inorganic materials 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 238000002310 reflectometry Methods 0.000 description 7
- 238000007650 screen-printing Methods 0.000 description 7
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005247 gettering Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 238000012876 topography Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910015845 BBr3 Inorganic materials 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical group O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000005574 cross-species transmission Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (19)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL2003390A NL2003390C2 (en) | 2009-08-25 | 2009-08-25 | Solar cell and method for manufacturing such a solar cell. |
CN201080048218.4A CN102598311B (zh) | 2009-08-25 | 2010-08-24 | 太阳能电池及制造所述太阳能电池的方法 |
AU2010287046A AU2010287046B2 (en) | 2009-08-25 | 2010-08-24 | Solar cell and method for manufacturing such a solar cell |
EP10747531.1A EP2471110B1 (en) | 2009-08-25 | 2010-08-24 | Solar cell and method for manufacturing such a solar cell |
SG2012012761A SG178861A1 (en) | 2009-08-25 | 2010-08-24 | Solar cell and method for manufacturing such a solar cell |
PCT/NL2010/050531 WO2011025372A1 (en) | 2009-08-25 | 2010-08-24 | Solar cell and method for manufacturing such a solar cell |
US13/392,432 US9034670B2 (en) | 2009-08-25 | 2010-08-24 | Solar cell and method for manufacturing such a solar cell |
PCT/NL2010/050530 WO2011025371A1 (en) | 2009-08-25 | 2010-08-24 | Solar cell and method for manufacturing such a solar cell |
KR1020127007655A KR101673565B1 (ko) | 2009-08-25 | 2010-08-24 | 태양 전지 및 이의 제조방법 |
EP10747530.3A EP2471109B1 (en) | 2009-08-25 | 2010-08-24 | Solar cell and method for manufacturing such a solar cell |
CN201080038315.5A CN102484168B (zh) | 2009-08-25 | 2010-08-24 | 太阳电池及制造太阳电池的方法 |
SG2012013199A SG178877A1 (en) | 2009-08-25 | 2010-08-24 | Solar cell and method for manufacturing such a solar cell |
JP2012526680A JP2013503476A (ja) | 2009-08-25 | 2010-08-24 | 太陽電池およびこのような太陽電池の製造方法 |
JP2012526679A JP5710618B2 (ja) | 2009-08-25 | 2010-08-24 | 太陽電池およびこのような太陽電池の製造方法 |
AU2010287047A AU2010287047A1 (en) | 2009-08-25 | 2010-08-24 | Solar cell and method for manufacturing such a solar cell |
KR1020127006680A KR20120050484A (ko) | 2009-08-25 | 2010-08-24 | 태양전지 및 태양전지의 제조 방법 |
US13/391,915 US8623688B2 (en) | 2009-08-25 | 2010-08-24 | Solar cell and method for manufacturing such a solar cell |
TW099128482A TWI520363B (zh) | 2009-08-25 | 2010-08-25 | 太陽電池及製造太陽電池的方法 |
TW099128481A TWI521728B (zh) | 2009-08-25 | 2010-08-25 | 太陽電池及製造太陽電池的方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL2003390 | 2009-08-25 | ||
NL2003390A NL2003390C2 (en) | 2009-08-25 | 2009-08-25 | Solar cell and method for manufacturing such a solar cell. |
Publications (1)
Publication Number | Publication Date |
---|---|
NL2003390C2 true NL2003390C2 (en) | 2011-02-28 |
Family
ID=41722932
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL2003390A NL2003390C2 (en) | 2009-08-25 | 2009-08-25 | Solar cell and method for manufacturing such a solar cell. |
Country Status (10)
Country | Link |
---|---|
US (2) | US9034670B2 (ko) |
EP (2) | EP2471109B1 (ko) |
JP (2) | JP2013503476A (ko) |
KR (2) | KR101673565B1 (ko) |
CN (2) | CN102598311B (ko) |
AU (2) | AU2010287047A1 (ko) |
NL (1) | NL2003390C2 (ko) |
SG (2) | SG178877A1 (ko) |
TW (2) | TWI521728B (ko) |
WO (2) | WO2011025372A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113471311A (zh) * | 2021-07-06 | 2021-10-01 | 安徽华晟新能源科技有限公司 | 一种异质结电池及其制备方法 |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8178419B2 (en) | 2008-02-05 | 2012-05-15 | Twin Creeks Technologies, Inc. | Method to texture a lamina surface within a photovoltaic cell |
KR101657626B1 (ko) * | 2010-10-08 | 2016-09-19 | 주식회사 원익아이피에스 | 태양전지제조방법 및 그 방법에 의하여 제조된 태양전지 |
NL2006298C2 (en) * | 2011-02-24 | 2012-08-27 | Energieonderzoek Ct Nederland | Solar cell and method for manufacturing such a solar cell. |
DE102011001946A1 (de) * | 2011-04-11 | 2012-10-11 | Q-Cells Se | Herstellungsverfahren einer Wafersolarzelle und Wafersolarzelle |
RU2469439C1 (ru) * | 2011-06-23 | 2012-12-10 | Общество с ограниченной ответственностью "Солнечный ветер" | Способ изготовления солнечного элемента с двухсторонней чувствительностью |
US20120160296A1 (en) * | 2011-09-30 | 2012-06-28 | Olivier Laparra | Textured photovoltaic cells and methods |
TWI572052B (zh) * | 2011-12-16 | 2017-02-21 | 周星工程有限公司 | 太陽能電池之製造方法 |
KR101860919B1 (ko) | 2011-12-16 | 2018-06-29 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
US8916954B2 (en) | 2012-02-05 | 2014-12-23 | Gtat Corporation | Multi-layer metal support |
US8841161B2 (en) | 2012-02-05 | 2014-09-23 | GTAT.Corporation | Method for forming flexible solar cells |
KR101404249B1 (ko) | 2012-02-28 | 2014-06-09 | 주식회사 엘지실트론 | 기판을 평가하는 방법 |
WO2013141700A2 (en) | 2012-03-20 | 2013-09-26 | Tempress Ip B.V. | Method for manufacturing a solar cell |
US20130330871A1 (en) * | 2012-06-12 | 2013-12-12 | Twin Creeks Technologies, Inc. | Methods for texturing a semiconductor material |
KR101872786B1 (ko) * | 2012-06-22 | 2018-06-29 | 엘지전자 주식회사 | 태양 전지의 불순물층 형성 방법 및 태양 전지의 제조 방법 |
US8785294B2 (en) | 2012-07-26 | 2014-07-22 | Gtat Corporation | Silicon carbide lamina |
WO2014083804A1 (ja) * | 2012-11-29 | 2014-06-05 | 三洋電機株式会社 | 太陽電池 |
TWI568003B (zh) * | 2012-12-19 | 2017-01-21 | 茂迪股份有限公司 | 太陽能電池及其製造方法與太陽能電池模組 |
TWI492400B (zh) * | 2013-02-21 | 2015-07-11 | 茂迪股份有限公司 | 太陽能電池及其製造方法與太陽能電池模組 |
WO2014175066A1 (ja) * | 2013-04-25 | 2014-10-30 | シャープ株式会社 | 光電変換素子 |
US20160072000A1 (en) * | 2014-09-05 | 2016-03-10 | David D. Smith | Front contact heterojunction process |
CN105632912A (zh) * | 2014-10-31 | 2016-06-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种硅片刻蚀方法 |
JP5938113B1 (ja) * | 2015-01-05 | 2016-06-22 | 信越化学工業株式会社 | 太陽電池用基板の製造方法 |
TWI543391B (zh) * | 2015-04-09 | 2016-07-21 | 新日光能源科技股份有限公司 | 太陽能電池及其製作方法 |
CN105226113B (zh) * | 2015-07-09 | 2018-06-01 | 苏州阿特斯阳光电力科技有限公司 | 一种晶体硅太阳能电池的绒面结构及其制备方法 |
WO2017051635A1 (ja) * | 2015-09-24 | 2017-03-30 | シャープ株式会社 | 半導体基板、光電変換素子、半導体基板の製造方法および光電変換素子の製造方法 |
TWI574425B (zh) * | 2016-05-20 | 2017-03-11 | 昱晶能源科技股份有限公司 | 太陽能電池及其製造方法 |
JP2018026388A (ja) | 2016-08-08 | 2018-02-15 | パナソニックIpマネジメント株式会社 | 太陽電池及び太陽電池の製造方法 |
TWI615989B (zh) * | 2016-11-30 | 2018-02-21 | 財團法人金屬工業研究發展中心 | 具角錐結構之矽晶圓及其製造方法 |
KR20180119969A (ko) | 2017-04-26 | 2018-11-05 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
TWI648863B (zh) * | 2017-05-05 | 2019-01-21 | 長生太陽能股份有限公司 | 太陽能電池及其製造方法 |
EP3671863B1 (en) * | 2018-12-20 | 2021-06-09 | IMEC vzw | Smoothed rear side doped layer for a bifacial solar cell |
CN110265497B (zh) * | 2019-06-28 | 2021-05-18 | 天合光能股份有限公司 | 一种选择性发射极的n型晶体硅太阳电池及其制备方法 |
US20220077330A1 (en) * | 2020-06-04 | 2022-03-10 | Tsec Corporation | Solar cell structure |
GB202020727D0 (en) * | 2020-12-30 | 2021-02-10 | Rec Solar Pte Ltd | Solar cell |
CN115020503B (zh) | 2021-08-04 | 2023-03-24 | 上海晶科绿能企业管理有限公司 | 太阳能电池及其制备方法、光伏组件 |
US11843071B2 (en) * | 2021-08-04 | 2023-12-12 | Shanghai Jinko Green Energy Enterprise Management Co., Ltd. | Solar cell, manufacturing method thereof, and photovoltaic module |
CN113540269B (zh) * | 2021-09-14 | 2022-04-12 | 浙江晶科能源有限公司 | 太阳能电池及其制备方法、光伏组件 |
CN114823951A (zh) * | 2022-06-28 | 2022-07-29 | 晶科能源(海宁)有限公司 | 太阳能电池及光伏组件 |
CN116435403B (zh) * | 2023-02-28 | 2024-09-17 | 六智韬新能源科技(上海)有限公司 | 一种柔性单晶硅片和柔性太阳电池及其制备方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070209697A1 (en) * | 2004-05-07 | 2007-09-13 | Shoichi Karakida | Solar Cell And Manufacturing Method Therefor |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02230776A (ja) * | 1989-03-02 | 1990-09-13 | Sharp Corp | 太陽電池の製造方法 |
DK170189B1 (da) * | 1990-05-30 | 1995-06-06 | Yakov Safir | Fremgangsmåde til fremstilling af halvlederkomponenter, samt solcelle fremstillet deraf |
JPH0722632A (ja) * | 1993-06-23 | 1995-01-24 | Sharp Corp | 多結晶シリコン太陽電池とその製造方法 |
AUPO468697A0 (en) * | 1997-01-21 | 1997-02-13 | Australian National University, The | A method of producing thin silicon epitaxial films |
US6207890B1 (en) | 1997-03-21 | 2001-03-27 | Sanyo Electric Co., Ltd. | Photovoltaic element and method for manufacture thereof |
JP3772456B2 (ja) * | 1997-04-23 | 2006-05-10 | 三菱電機株式会社 | 太陽電池及びその製造方法、半導体製造装置 |
JP2000101111A (ja) * | 1998-09-17 | 2000-04-07 | Sharp Corp | 太陽電池の製造方法 |
EP1378947A1 (en) * | 2002-07-01 | 2004-01-07 | Interuniversitair Microelektronica Centrum Vzw | Semiconductor etching paste and the use thereof for localised etching of semiconductor substrates |
JP2004235274A (ja) * | 2003-01-28 | 2004-08-19 | Kyocera Corp | 多結晶シリコン基板およびその粗面化法 |
JP2007510948A (ja) * | 2003-11-06 | 2007-04-26 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | スイッチング可能透明ディスプレイ |
JP2005150614A (ja) * | 2003-11-19 | 2005-06-09 | Sharp Corp | 太陽電池及びその製造方法 |
US7820475B2 (en) * | 2005-12-21 | 2010-10-26 | Sunpower Corporation | Back side contact solar cell structures and fabrication processes |
US20080230119A1 (en) * | 2007-03-22 | 2008-09-25 | Hideki Akimoto | Paste for back contact-type solar cell |
WO2009145857A1 (en) * | 2008-04-18 | 2009-12-03 | 1366 Technologies Inc. | Methods to pattern diffusion layers in solar cells and solar cells made by such methods |
US8247312B2 (en) * | 2008-04-24 | 2012-08-21 | Innovalight, Inc. | Methods for printing an ink on a textured wafer surface |
EP2159851A1 (fr) | 2008-09-01 | 2010-03-03 | Université de Neuchâtel | Procédé pour limiter la croissance épitaxiale dans un dispositif photoélectrique à hétérojonctions et un tel dispositif photoélctrique |
JP5362379B2 (ja) * | 2009-02-06 | 2013-12-11 | 三洋電機株式会社 | 太陽電池のi−v特性の測定方法 |
KR101146734B1 (ko) * | 2009-10-26 | 2012-05-17 | 엘지전자 주식회사 | 태양 전지 셀 및 이를 구비한 태양 전지 모듈 |
-
2009
- 2009-08-25 NL NL2003390A patent/NL2003390C2/en not_active IP Right Cessation
-
2010
- 2010-08-24 AU AU2010287047A patent/AU2010287047A1/en not_active Abandoned
- 2010-08-24 JP JP2012526680A patent/JP2013503476A/ja active Pending
- 2010-08-24 KR KR1020127007655A patent/KR101673565B1/ko active IP Right Grant
- 2010-08-24 CN CN201080048218.4A patent/CN102598311B/zh active Active
- 2010-08-24 EP EP10747530.3A patent/EP2471109B1/en active Active
- 2010-08-24 JP JP2012526679A patent/JP5710618B2/ja active Active
- 2010-08-24 AU AU2010287046A patent/AU2010287046B2/en active Active
- 2010-08-24 SG SG2012013199A patent/SG178877A1/en unknown
- 2010-08-24 US US13/392,432 patent/US9034670B2/en active Active
- 2010-08-24 KR KR1020127006680A patent/KR20120050484A/ko active Search and Examination
- 2010-08-24 WO PCT/NL2010/050531 patent/WO2011025372A1/en active Application Filing
- 2010-08-24 EP EP10747531.1A patent/EP2471110B1/en active Active
- 2010-08-24 WO PCT/NL2010/050530 patent/WO2011025371A1/en active Application Filing
- 2010-08-24 SG SG2012012761A patent/SG178861A1/en unknown
- 2010-08-24 US US13/391,915 patent/US8623688B2/en active Active
- 2010-08-24 CN CN201080038315.5A patent/CN102484168B/zh active Active
- 2010-08-25 TW TW099128481A patent/TWI521728B/zh not_active IP Right Cessation
- 2010-08-25 TW TW099128482A patent/TWI520363B/zh not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070209697A1 (en) * | 2004-05-07 | 2007-09-13 | Shoichi Karakida | Solar Cell And Manufacturing Method Therefor |
Non-Patent Citations (3)
Title |
---|
BEAUCARNE G ET AL: "Epitaxial thin-film Si solar cells", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 511-512, 26 July 2006 (2006-07-26), pages 533 - 542, XP025007243, ISSN: 0040-6090, [retrieved on 20060726] * |
MILES ET AL: "Inorganic photovoltaic cells", MATERIALS TODAY, ELSEVIER SCIENCE, KIDLINGTON, GB, vol. 10, no. 11, 12 October 2007 (2007-10-12), pages 20 - 27, XP022297610, ISSN: 1369-7021 * |
WENHAM S R ET AL: "Surface passivation in high efficiency silicon solar cells", SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 65, no. 1-4, 1 January 2001 (2001-01-01), pages 377 - 384, XP004217141, ISSN: 0927-0248 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113471311A (zh) * | 2021-07-06 | 2021-10-01 | 安徽华晟新能源科技有限公司 | 一种异质结电池及其制备方法 |
CN113471311B (zh) * | 2021-07-06 | 2023-05-23 | 安徽华晟新能源科技有限公司 | 一种异质结电池及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI520363B (zh) | 2016-02-01 |
EP2471110B1 (en) | 2013-10-30 |
EP2471110A1 (en) | 2012-07-04 |
WO2011025371A1 (en) | 2011-03-03 |
AU2010287046A1 (en) | 2012-04-19 |
TW201119070A (en) | 2011-06-01 |
EP2471109B1 (en) | 2013-10-30 |
SG178877A1 (en) | 2012-04-27 |
TWI521728B (zh) | 2016-02-11 |
AU2010287046A2 (en) | 2012-05-03 |
CN102484168B (zh) | 2015-04-15 |
CN102598311A (zh) | 2012-07-18 |
CN102598311B (zh) | 2016-01-06 |
SG178861A1 (en) | 2012-04-27 |
TW201123518A (en) | 2011-07-01 |
AU2010287047A1 (en) | 2012-03-15 |
JP2013503475A (ja) | 2013-01-31 |
US20120181667A1 (en) | 2012-07-19 |
US8623688B2 (en) | 2014-01-07 |
US9034670B2 (en) | 2015-05-19 |
US20120204948A1 (en) | 2012-08-16 |
CN102484168A (zh) | 2012-05-30 |
JP2013503476A (ja) | 2013-01-31 |
KR20120080583A (ko) | 2012-07-17 |
WO2011025372A1 (en) | 2011-03-03 |
AU2010287046B2 (en) | 2015-07-02 |
KR101673565B1 (ko) | 2016-11-07 |
EP2471109A1 (en) | 2012-07-04 |
KR20120050484A (ko) | 2012-05-18 |
JP5710618B2 (ja) | 2015-04-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
NL2003390C2 (en) | Solar cell and method for manufacturing such a solar cell. | |
US5461002A (en) | Method of making diffused doped areas for semiconductor components | |
US20100032012A1 (en) | Solar cell and method of manufacturing the same | |
US20070238216A1 (en) | Solar cell and its method of manufacture | |
US20100224251A1 (en) | Method of manufacturing solar cell | |
CN104037257B (zh) | 太阳能电池及其制造方法、单面抛光设备 | |
JP2023024428A (ja) | 太陽電池及びその製造方法、太陽電池モジュール | |
CN110854240A (zh) | Perc电池及其制备方法 | |
JP2011159783A (ja) | 裏面電極型太陽電池の製造方法、裏面電極型太陽電池および裏面電極型太陽電池モジュール | |
SG193088A1 (en) | Solar cell and method of manufacturing the same | |
CN101971358A (zh) | 太阳能电池的制造方法、太阳能电池的制造装置以及太阳能电池 | |
JP2010161310A (ja) | 裏面電極型太陽電池および裏面電極型太陽電池の製造方法 | |
CN114447142A (zh) | 一种N型TOPCon太阳能电池及其制作方法 | |
KR101160116B1 (ko) | 후면 접합 태양전지의 제조방법 | |
CN210956692U (zh) | Perc电池 | |
KR101093114B1 (ko) | 후면접합 구조의 태양전지 | |
KR20110127540A (ko) | 태양전지 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLED | Pledge established |
Effective date: 20150116 |
|
MM | Lapsed because of non-payment of the annual fee |
Effective date: 20160901 |