NL193918C - Werkwijze voor het vervaardigen van een halfgeleiderinrichting bestaande uit CMOS-transistoren, bipolaire verticale transistoren en dioden. - Google Patents
Werkwijze voor het vervaardigen van een halfgeleiderinrichting bestaande uit CMOS-transistoren, bipolaire verticale transistoren en dioden. Download PDFInfo
- Publication number
- NL193918C NL193918C NL8700242A NL8700242A NL193918C NL 193918 C NL193918 C NL 193918C NL 8700242 A NL8700242 A NL 8700242A NL 8700242 A NL8700242 A NL 8700242A NL 193918 C NL193918 C NL 193918C
- Authority
- NL
- Netherlands
- Prior art keywords
- transistors
- regions
- silicon
- layer
- pnp
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 238000000034 method Methods 0.000 claims description 39
- 229910052710 silicon Inorganic materials 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 34
- 238000009792 diffusion process Methods 0.000 claims description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 229910052796 boron Inorganic materials 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- -1 boron ions Chemical class 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 22
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 claims 1
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- 239000002689 soil Substances 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 230000000873 masking effect Effects 0.000 description 16
- 238000002513 implantation Methods 0.000 description 10
- 239000004922 lacquer Substances 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 101001034843 Mus musculus Interferon-induced transmembrane protein 1 Proteins 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- MXSJNBRAMXILSE-UHFFFAOYSA-N [Si].[P].[B] Chemical compound [Si].[P].[B] MXSJNBRAMXILSE-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910001439 antimony ion Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8248—Combination of bipolar and field-effect technology
- H01L21/8249—Bipolar and MOS technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT2077986U IT210852Z2 (it) | 1986-01-30 | 1986-01-30 | Dispositivo monolitico a semiconduttore contenente transistori bipolari a giunzione, transitori cmos e dmoscomplementari e diodi a bassa perdita. |
| IT19231/86A IT1188609B (it) | 1986-01-30 | 1986-01-30 | Procedimento per la fabbricazione di dispositivi monolitici a semiconduttore contenenti transistori bipolari a giunzione,transistori cmos e dmos complementari e diodi a bassa perdita |
| IT1923186 | 1986-01-30 | ||
| IT2077986 | 1986-06-13 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NL8700242A NL8700242A (nl) | 1987-08-17 |
| NL193918B NL193918B (nl) | 2000-10-02 |
| NL193918C true NL193918C (nl) | 2001-02-05 |
Family
ID=26327100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8700242A NL193918C (nl) | 1986-01-30 | 1987-01-30 | Werkwijze voor het vervaardigen van een halfgeleiderinrichting bestaande uit CMOS-transistoren, bipolaire verticale transistoren en dioden. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4887142A (fr) |
| DE (1) | DE3702810C2 (fr) |
| FR (1) | FR2593640B1 (fr) |
| GB (1) | GB2186117B (fr) |
| NL (1) | NL193918C (fr) |
| SE (1) | SE502803C2 (fr) |
Families Citing this family (61)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5374840A (en) * | 1989-04-25 | 1994-12-20 | Matsushita Electronics Corporation | Semiconductor device with isolated transistors |
| JPH0618255B2 (ja) * | 1984-04-04 | 1994-03-09 | 株式会社東芝 | 半導体装置 |
| USRE34025E (en) * | 1987-02-13 | 1992-08-11 | Kabushiki Kaisha Toshiba | Semiconductor device with isolation between MOSFET and control circuit |
| KR900001062B1 (ko) * | 1987-09-15 | 1990-02-26 | 강진구 | 반도체 바이 씨 모오스 장치의 제조방법 |
| IT1232930B (it) * | 1987-10-30 | 1992-03-10 | Sgs Microelettronica Spa | Struttura integrata a componenti attivi e passivi inclusi in sacche di isolamento operante a tensione maggiore della tensione di rottura tra ciascun componente e la sacca che lo contiene |
| US5262846A (en) * | 1988-11-14 | 1993-11-16 | Texas Instruments Incorporated | Contact-free floating-gate memory array with silicided buried bitlines and with single-step-defined floating gates |
| JP2509690B2 (ja) * | 1989-02-20 | 1996-06-26 | 株式会社東芝 | 半導体装置 |
| JPH0817179B2 (ja) * | 1989-03-14 | 1996-02-21 | 株式会社東芝 | 半導体装置およびその製造方法 |
| JPH0348459A (ja) * | 1989-04-26 | 1991-03-01 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| FR2647959B1 (fr) * | 1989-06-02 | 1991-09-20 | Sgs Thomson Microelectronics | Procede de fabrication simultanee de transistors mos a canal n et de transistors bipolaires verticaux pnp |
| IT1235843B (it) * | 1989-06-14 | 1992-11-03 | Sgs Thomson Microelectronics | Dispositivo integrato contenente strutture di potenza formate con transistori ldmos complementari, strutture cmos e pnp verticali con aumentata capacita' di supportare un'alta tensione di alimentazione. |
| USRE37424E1 (en) * | 1989-06-14 | 2001-10-30 | Stmicroelectronics S.R.L. | Mixed technology integrated device comprising complementary LDMOS power transistors, CMOS and vertical PNP integrated structures having an enhanced ability to withstand a relatively high supply voltage |
| US4979001A (en) * | 1989-06-30 | 1990-12-18 | Micrel Incorporated | Hidden zener diode structure in configurable integrated circuit |
| FR2650439B1 (fr) * | 1989-07-27 | 1991-11-15 | Sgs Thomson Microelectronics | Circuit integre vdmos/logique comprenant une diode |
| US5045492A (en) * | 1989-09-25 | 1991-09-03 | Allegro Microsystems, Inc. | Method of making integrated circuit with high current transistor and CMOS transistors |
| IT1239497B (it) * | 1990-03-29 | 1993-11-03 | Sgs Thomson Microelectronics | Disposizione circuitale per prevenire fenomeni di innesto in transistori pnp verticali con collettore isolato |
| US5116777A (en) * | 1990-04-30 | 1992-05-26 | Sgs-Thomson Microelectronics, Inc. | Method for fabricating semiconductor devices by use of an N+ buried layer for complete isolation |
| US5229308A (en) * | 1990-04-30 | 1993-07-20 | Xerox Corporation | Bipolar transistors with high voltage MOS transistors in a single substrate |
| US5057446A (en) * | 1990-08-06 | 1991-10-15 | Texas Instruments Incorporated | Method of making an EEPROM with improved capacitive coupling between control gate and floating gate |
| US5272098A (en) * | 1990-11-21 | 1993-12-21 | Texas Instruments Incorporated | Vertical and lateral insulated-gate, field-effect transistors, systems and methods |
| US5429959A (en) * | 1990-11-23 | 1995-07-04 | Texas Instruments Incorporated | Process for simultaneously fabricating a bipolar transistor and a field-effect transistor |
| US5296393A (en) * | 1990-11-23 | 1994-03-22 | Texas Instruments Incorporated | Process for the simultaneous fabrication of high-and-low-voltage semiconductor devices, integrated circuit containing the same, systems and methods |
| WO1992014262A1 (fr) * | 1991-02-01 | 1992-08-20 | Sierra Semiconductor Corporation | Structure a semi-conducteur et son procede de production |
| US5188972A (en) * | 1991-02-01 | 1993-02-23 | Sierra Semiconductor Corporation | Method for making bipolar transistor by self-aligning the emitter to the base contact diffusion |
| US5273926A (en) * | 1991-06-27 | 1993-12-28 | Texas Instruments Incorporated | Method of making flash EEPROM or merged FAMOS cell without alignment sensitivity |
| US5204541A (en) * | 1991-06-28 | 1993-04-20 | Texas Instruments Incorporated | Gated thyristor and process for its simultaneous fabrication with high- and low-voltage semiconductor devices |
| JPH05226589A (ja) * | 1992-02-17 | 1993-09-03 | Mitsubishi Electric Corp | Ｃ−ＢｉＣＭＯＳ型半導体装置およびその製造方法 |
| JP3226053B2 (ja) * | 1992-06-03 | 2001-11-05 | 富士電機株式会社 | 半導体装置の製造方法 |
| US5422508A (en) * | 1992-09-21 | 1995-06-06 | Siliconix Incorporated | BiCDMOS structure |
| US5328866A (en) * | 1992-09-21 | 1994-07-12 | Siliconix Incorporated | Low temperature oxide layer over field implant mask |
| US5559044A (en) * | 1992-09-21 | 1996-09-24 | Siliconix Incorporated | BiCDMOS process technology |
| US5439842A (en) * | 1992-09-21 | 1995-08-08 | Siliconix Incorporated | Low temperature oxide layer over field implant mask |
| US5648281A (en) * | 1992-09-21 | 1997-07-15 | Siliconix Incorporated | Method for forming an isolation structure and a bipolar transistor on a semiconductor substrate |
| DE69326771T2 (de) | 1993-12-07 | 2000-03-02 | Stmicroelectronics S.R.L., Agrate Brianza | Ausgangstufe mit Transistoren von unterschiedlichem Typ |
| US5356822A (en) * | 1994-01-21 | 1994-10-18 | Alliedsignal Inc. | Method for making all complementary BiCDMOS devices |
| US5885880A (en) * | 1994-09-19 | 1999-03-23 | Sony Corporation | Bipolar transistor device and method for manufacturing the same |
| US5610079A (en) * | 1995-06-19 | 1997-03-11 | Reliance Electric Industrial Company | Self-biased moat for parasitic current suppression in integrated circuits |
| US6236084B1 (en) * | 1998-06-01 | 2001-05-22 | Seiko Instruments Inc. | Semiconductor integrated circuit device having double diffusion insulated gate field effect transistor |
| JP3317345B2 (ja) * | 1999-07-23 | 2002-08-26 | 日本電気株式会社 | 半導体装置 |
| US6372595B1 (en) | 1999-12-03 | 2002-04-16 | Legerity, Inc. | Lateral bipolar junction transistor with reduced parasitic current loss |
| US6445058B1 (en) * | 1999-12-03 | 2002-09-03 | Legerity, Inc. | Bipolar junction transistor incorporating integral field plate |
| DE60144528D1 (de) * | 2000-10-19 | 2011-06-09 | Quantum Semiconductor Llc | Verfahren zur herstellung von mit cmos integrierten heteroübergang-photodioden |
| US6911694B2 (en) * | 2001-06-27 | 2005-06-28 | Ricoh Company, Ltd. | Semiconductor device and method for fabricating such device |
| JP2003017603A (ja) * | 2001-06-28 | 2003-01-17 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| US8816443B2 (en) * | 2001-10-12 | 2014-08-26 | Quantum Semiconductor Llc | Method of fabricating heterojunction photodiodes with CMOS |
| JP2003234423A (ja) * | 2002-02-07 | 2003-08-22 | Sony Corp | 半導体装置及びその製造方法 |
| US7825488B2 (en) | 2006-05-31 | 2010-11-02 | Advanced Analogic Technologies, Inc. | Isolation structures for integrated circuits and modular methods of forming the same |
| US6855985B2 (en) * | 2002-09-29 | 2005-02-15 | Advanced Analogic Technologies, Inc. | Modular bipolar-CMOS-DMOS analog integrated circuit & power transistor technology |
| US7019377B2 (en) * | 2002-12-17 | 2006-03-28 | Micrel, Inc. | Integrated circuit including high voltage devices and low voltage devices |
| CN1324680C (zh) * | 2002-12-26 | 2007-07-04 | 上海贝岭股份有限公司 | Pmos管解决cslic1b01集成电路失效的方法 |
| JP4437388B2 (ja) * | 2003-02-06 | 2010-03-24 | 株式会社リコー | 半導体装置 |
| DE10351014B4 (de) * | 2003-10-31 | 2008-06-05 | Infineon Technologies Ag | Diodenstruktur und integrale Leistungsschaltanordnung mit Low-Leakage-Diode |
| US7772653B1 (en) | 2004-02-11 | 2010-08-10 | National Semiconductor Corporation | Semiconductor apparatus comprising bipolar transistors and metal oxide semiconductor transistors |
| US7304354B2 (en) * | 2004-02-17 | 2007-12-04 | Silicon Space Technology Corp. | Buried guard ring and radiation hardened isolation structures and fabrication methods |
| US7544558B2 (en) * | 2006-03-13 | 2009-06-09 | Bcd Semiconductor Manufacturing Limited | Method for integrating DMOS into sub-micron CMOS process |
| FR2948243B1 (fr) | 2009-07-17 | 2011-10-07 | Valeo Equip Electr Moteur | Pont redresseur de courant pour alternateur polyphase et alternateur polyphase comportant un tel pont |
| US8796767B1 (en) | 2011-06-06 | 2014-08-05 | Maxim Integrated Products, Inc. | Low-noise, high-gain semiconductor device incorporating BCD (bipolar-CMOS-DMOS) technology |
| US9214457B2 (en) | 2011-09-20 | 2015-12-15 | Alpha & Omega Semiconductor Incorporated | Method of integrating high voltage devices |
| JP2013187263A (ja) | 2012-03-06 | 2013-09-19 | Canon Inc | 半導体装置、記録装置及びそれらの製造方法 |
| US9722041B2 (en) | 2012-09-19 | 2017-08-01 | Vishay-Siliconix | Breakdown voltage blocking device |
| US10038058B2 (en) | 2016-05-07 | 2018-07-31 | Silicon Space Technology Corporation | FinFET device structure and method for forming same |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4054899A (en) * | 1970-09-03 | 1977-10-18 | Texas Instruments Incorporated | Process for fabricating monolithic circuits having matched complementary transistors and product |
| CA1038968A (fr) * | 1974-09-19 | 1978-09-19 | Western Electric Company, Incorporated | Fabrication de transistors verticaux complementaires |
| US4055884A (en) * | 1976-12-13 | 1977-11-01 | International Business Machines Corporation | Fabrication of power field effect transistors and the resulting structures |
| US4225877A (en) * | 1978-09-05 | 1980-09-30 | Sprague Electric Company | Integrated circuit with C-Mos logic, and a bipolar driver with polysilicon resistors |
| US4546370A (en) * | 1979-02-15 | 1985-10-08 | Texas Instruments Incorporated | Monolithic integration of logic, control and high voltage interface circuitry |
| DE3029553A1 (de) * | 1980-08-04 | 1982-03-11 | Siemens AG, 1000 Berlin und 8000 München | Transistoranordnung mit hoher kollektor-emitter-durchbruchsspannung |
| JPS57162359A (en) * | 1981-03-30 | 1982-10-06 | Toshiba Corp | Semiconductor device |
| FR2507820A1 (fr) * | 1981-06-16 | 1982-12-17 | Thomson Csf | Transistor bipolaire a commande par effet de champ au moyen d'une grille isolee |
| EP0093304B1 (fr) * | 1982-04-19 | 1986-01-15 | Matsushita Electric Industrial Co., Ltd. | Circuit intégré semi-conducteur et son procédé de fabrication |
| US4441249A (en) * | 1982-05-26 | 1984-04-10 | Bell Telephone Laboratories, Incorporated | Semiconductor integrated circuit capacitor |
| FR2540126A1 (fr) * | 1983-01-28 | 1984-08-03 | Rhone Poulenc Spec Chim | Latex stables et amphoteres de copolymeres a base de dienes conjugues |
-
1987
- 1987-01-27 GB GB8701769A patent/GB2186117B/en not_active Expired
- 1987-01-29 SE SE8700351A patent/SE502803C2/sv not_active IP Right Cessation
- 1987-01-29 FR FR878701076A patent/FR2593640B1/fr not_active Expired - Lifetime
- 1987-01-30 NL NL8700242A patent/NL193918C/nl not_active IP Right Cessation
- 1987-01-30 DE DE3702810A patent/DE3702810C2/de not_active Expired - Fee Related
-
1988
- 1988-11-28 US US07/276,890 patent/US4887142A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| FR2593640B1 (fr) | 1990-11-30 |
| GB2186117B (en) | 1989-11-01 |
| US4887142A (en) | 1989-12-12 |
| NL193918B (nl) | 2000-10-02 |
| NL8700242A (nl) | 1987-08-17 |
| GB2186117A (en) | 1987-08-05 |
| FR2593640A1 (fr) | 1987-07-31 |
| GB8701769D0 (en) | 1987-03-04 |
| DE3702810A1 (de) | 1987-08-06 |
| DE3702810C2 (de) | 1998-11-12 |
| SE8700351D0 (sv) | 1987-01-29 |
| SE8700351L (sv) | 1987-07-31 |
| SE502803C2 (sv) | 1996-01-15 |
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