DE69228609T2 - Analog/digitalwanlder und herstellungsverfahren - Google Patents

Analog/digitalwanlder und herstellungsverfahren

Info

Publication number
DE69228609T2
DE69228609T2 DE69228609T DE69228609T DE69228609T2 DE 69228609 T2 DE69228609 T2 DE 69228609T2 DE 69228609 T DE69228609 T DE 69228609T DE 69228609 T DE69228609 T DE 69228609T DE 69228609 T2 DE69228609 T2 DE 69228609T2
Authority
DE
Germany
Prior art keywords
wanlder
analog
digital
manufacturing
digital wanlder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69228609T
Other languages
English (en)
Other versions
DE69228609D1 (de
Inventor
Kantilal Bacrania
Cong Chi
Michael Church
Gerald Cotreau
Glenn Dejong
Gregory Fisher
John Gasner
Akira Ito
Jeffrey Johnston
Ken King
David Kutchmarick
Choong-Sun Rhee
David Riemer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Harris Corp
Original Assignee
Harris Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/785,325 external-priority patent/US5369309A/en
Priority claimed from US07/785,395 external-priority patent/US5382916A/en
Application filed by Harris Corp filed Critical Harris Corp
Publication of DE69228609D1 publication Critical patent/DE69228609D1/de
Application granted granted Critical
Publication of DE69228609T2 publication Critical patent/DE69228609T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/267—Current mirrors using both bipolar and field-effect technology
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements
    • G11C27/024—Sample-and-hold arrangements using a capacitive memory element
    • G11C27/026—Sample-and-hold arrangements using a capacitive memory element associated with an amplifier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/50—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
    • H03F3/505—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
    • H03G1/0082—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using bipolar transistor-type devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/15—Arrangements in which pulses are delivered at different times at several outputs, i.e. pulse distributors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/14—Conversion in steps with each step involving the same or a different conversion means and delivering more than one bit
    • H03M1/16—Conversion in steps with each step involving the same or a different conversion means and delivering more than one bit with scale factor modification, i.e. by changing the amplification between the steps
    • H03M1/162—Conversion in steps with each step involving the same or a different conversion means and delivering more than one bit with scale factor modification, i.e. by changing the amplification between the steps the steps being performed sequentially in a single stage, i.e. recirculation type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/34—Analogue value compared with reference values
    • H03M1/36—Analogue value compared with reference values simultaneously only, i.e. parallel type
    • H03M1/361—Analogue value compared with reference values simultaneously only, i.e. parallel type having a separate comparator and reference value for each quantisation level, i.e. full flash converter type
    • H03M1/362—Analogue value compared with reference values simultaneously only, i.e. parallel type having a separate comparator and reference value for each quantisation level, i.e. full flash converter type the reference values being generated by a resistive voltage divider
    • H03M1/365—Analogue value compared with reference values simultaneously only, i.e. parallel type having a separate comparator and reference value for each quantisation level, i.e. full flash converter type the reference values being generated by a resistive voltage divider the voltage divider being a single resistor string

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Automation & Control Theory (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Analogue/Digital Conversion (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69228609T 1991-10-30 1992-10-29 Analog/digitalwanlder und herstellungsverfahren Expired - Fee Related DE69228609T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US78540091A 1991-10-30 1991-10-30
US07/785,325 US5369309A (en) 1991-10-30 1991-10-30 Analog-to-digital converter and method of fabrication
US07/785,395 US5382916A (en) 1991-10-30 1991-10-30 Differential voltage follower
PCT/US1992/009366 WO1993009599A2 (en) 1991-10-30 1992-10-29 Analog-to-digital converter and method of fabrication

Publications (2)

Publication Number Publication Date
DE69228609D1 DE69228609D1 (de) 1999-04-15
DE69228609T2 true DE69228609T2 (de) 1999-07-22

Family

ID=27419824

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69228609T Expired - Fee Related DE69228609T2 (de) 1991-10-30 1992-10-29 Analog/digitalwanlder und herstellungsverfahren

Country Status (4)

Country Link
EP (2) EP0610430B1 (de)
JP (1) JPH07502868A (de)
DE (1) DE69228609T2 (de)
WO (1) WO1993009599A2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5801652A (en) * 1994-07-08 1998-09-01 Cirrus Logic, Inc. Pattern dependent noise reduction in a digital processing circuit utilizing image circuitry
US6804726B1 (en) 1996-05-22 2004-10-12 Geovector Corporation Method and apparatus for controlling electrical devices in response to sensed conditions
FR2764714A1 (fr) * 1997-06-17 1998-12-18 Philips Electronics Nv Convertisseur analogique/numerique
US6232801B1 (en) * 1999-08-04 2001-05-15 Vlsi Technology, Inc. Comparators and comparison methods
US6480128B1 (en) * 2001-05-25 2002-11-12 Infineon Technologies Ag High-speed sample-and-hold circuit with gain
RU2481701C2 (ru) * 2011-07-21 2013-05-10 Виктор Николаевич Мурашёв Троичный к-моп-с логический элемент "не"
JP6993847B2 (ja) * 2017-11-07 2022-01-14 富士フイルムヘルスケア株式会社 超音波撮像装置、超音波プローブ、および、送信装置
CN113281591B (zh) * 2021-05-12 2023-06-02 中国电子科技集团公司第二十九研究所 一种实现多通道电磁干扰设备组批全自动测试的测试系统

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3230468A (en) * 1962-12-24 1966-01-18 Nexus Res Lab Inc Apparatus for compensating a transistor for thermal variations in its operating point
AT271952B (de) * 1966-05-04 1969-06-25 Wiener Schwachstromwerke Gmbh Schaltungsanordnung zur Erzeugung von Impulsen mit vorgegebenen zeitlichen Abständen
DE2401701C3 (de) * 1974-01-15 1978-12-21 Robert Bosch Gmbh, 7000 Stuttgart Transistorleistungsschalter
JPS55143471A (en) * 1979-04-27 1980-11-08 Toshiba Corp Battery voltage detecting circuit
DE2951024A1 (de) * 1979-12-19 1981-06-25 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verstaerkerschaltung
US4325018A (en) * 1980-08-14 1982-04-13 Rca Corporation Temperature-correction network with multiple corrections as for extrapolated band-gap voltage reference circuits
JPS5779457A (en) * 1980-11-05 1982-05-18 Hitachi Ltd Voltage comparing circuit
JPS5870565A (ja) * 1981-10-23 1983-04-27 Hitachi Ltd 集積回路の電源供給回路
US4494164A (en) * 1982-04-02 1985-01-15 Ampex Corporation Overload protection device
JPS58196464A (ja) * 1982-05-11 1983-11-15 Matsushita Electric Ind Co Ltd 電圧降下検出回路
US4445270A (en) * 1982-06-21 1984-05-01 Rca Corporation Low resistance contact for high density integrated circuit
JPS592410A (ja) * 1982-06-28 1984-01-09 Sony Corp 電流増幅器
US4528463A (en) * 1982-06-30 1985-07-09 National Semiconductor Corporation Bipolar digital peripheral driver transistor circuit
JPS60176240A (ja) * 1984-02-23 1985-09-10 Nec Corp 半導体装置の製造方法
JPS6146613A (ja) * 1984-08-10 1986-03-06 Nec Corp レベル検出回路
US4633165A (en) * 1984-08-15 1986-12-30 Precision Monolithics, Inc. Temperature compensated voltage reference
JPH0628296B2 (ja) * 1985-10-17 1994-04-13 日本電気株式会社 半導体装置の製造方法
US4647841A (en) * 1985-10-21 1987-03-03 Motorola, Inc. Low voltage, high precision current source
DE3676297D1 (de) * 1986-03-12 1991-01-31 Itt Ind Gmbh Deutsche Integrierte isolierschicht-feldeffekttransistor-verzoegerungsleitung fuer digitalsignale.
US4686489A (en) * 1986-06-16 1987-08-11 Tektronix, Inc. Triggered voltage controlled oscillator using fast recovery gate
JPS639924A (ja) * 1986-06-30 1988-01-16 Sharp Corp 半導体装置の製造方法
GB2193036B (en) * 1986-07-24 1990-05-02 Mitsubishi Electric Corp Method of fabricating a semiconductor integrated circuit device
JPS63164458A (ja) * 1986-12-26 1988-07-07 Fujitsu Ltd Ｂｉ−ＣＭＯＳ素子の製造方法
JPS63248157A (ja) * 1987-04-02 1988-10-14 Nec Corp 半導体装置の製造方法
US4792750A (en) * 1987-04-13 1988-12-20 Teledyne Industries, Inc. Resistorless, precision current source
JPS643647A (en) * 1987-06-26 1989-01-09 Konishiroku Photo Ind Photosensitive composition and photosensitive planographic plate
DE8710526U1 (de) * 1987-07-31 1988-12-08 Robert Bosch Gmbh, 70469 Stuttgart Elektronisches Gerät
US4759836A (en) * 1987-08-12 1988-07-26 Siliconix Incorporated Ion implantation of thin film CrSi2 and SiC resistors
US4878770A (en) * 1987-09-09 1989-11-07 Analog Devices, Inc. IC chips with self-aligned thin film resistors
USH546H (en) * 1988-02-26 1988-11-01 The United States Of America As Represented By The Secretary Of The Air Force Formation of thin-film resistors on silicon substrates
JPH0215713A (ja) * 1988-07-01 1990-01-19 Toshiba Corp アナログ・ディジタル変換回路
EP0360936A1 (de) * 1988-09-29 1990-04-04 Siemens Aktiengesellschaft Österreich Verfahren zur Wandlung des Abtastsignals eines analogen Eingangssignals
US4853610A (en) * 1988-12-05 1989-08-01 Harris Semiconductor Patents, Inc. Precision temperature-stable current sources/sinks
GB2229056A (en) * 1989-03-10 1990-09-12 Philips Electronic Associated Differential amplifiers
US4939442A (en) * 1989-03-30 1990-07-03 Texas Instruments Incorporated Bandgap voltage reference and method with further temperature correction
IT1230837B (it) * 1989-05-19 1991-11-07 Sgs Thomson Microelectronics Amplificatore operazionale differenziale, integrabile monoliticamente.
JPH0342823A (ja) * 1989-07-10 1991-02-25 Seiko Instr Inc 半導体装置とその製造方法
JPH065705B2 (ja) * 1989-08-11 1994-01-19 株式会社東芝 半導体集積回路装置
US5105194A (en) * 1991-01-29 1992-04-14 Sony Corp. Of America Time shift two-step analog to digital converter

Also Published As

Publication number Publication date
EP0610430B1 (de) 1999-03-10
JPH07502868A (ja) 1995-03-23
DE69228609D1 (de) 1999-04-15
WO1993009599A3 (en) 1993-08-05
WO1993009599A2 (en) 1993-05-13
EP0610430A1 (de) 1994-08-17
EP0901058A1 (de) 1999-03-10

Similar Documents

Publication Publication Date Title
DE69228987D1 (de) Analog-und digitalwandler
DE69322807D1 (de) Zahnprothese und Herstellungsverfahren
DE69228641T2 (de) Kodierer und dekodierer
FI942781A (fi) Samanaikainen analoginen ja digitaalinen siirto
DE69403461D1 (de) Katheter und herstellungsverfahren
DE69333336T2 (de) Isolatorstruktur und zugehöriges Herstellungsverfahren
DE69131099D1 (de) Analog-digitalwandler
DE69203361D1 (de) Keramischer Kondensator und seine Herstellungsmethode.
DE69330198T2 (de) Analog Digitalwandler
DE69312425T2 (de) Digital-/Analogwandler
DE69312885D1 (de) Analog/Digital Wandler
NO930118D0 (no) Scintillator og fremstilling derav
DE4294151T1 (de) Magnetoresistives Element und Herstellungsverfahren dafür
DE69421172D1 (de) Synthetises detergensstueck und herstellung davon
DE69416661T2 (de) Digital Analogwandler
DE69120531D1 (de) Analog-digitalwandler
DE69228609T2 (de) Analog/digitalwanlder und herstellungsverfahren
NO172472C (no) For og fremgangsmaate til fremstilling derav
DE69227564D1 (de) Nachlauf spreizungskompensiert und Sturz nachlaufkompensiert
GB9216184D0 (en) Arrester and manufacturing method thereof
DE3485530D1 (de) Analog-digital-kodierer und digital-analog-dekodierer.
DE69416066D1 (de) Digitaler Integrator und Filter erster Ordnung
DE69120685D1 (de) Supraleiter und herstellungsverfahren
DE69212776D1 (de) Neuronaler Analog-/Digitalwandler
NO933076D0 (no) Naeringssammensetning og fremgangsmaate for fremstilling

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee