NL189789C - Geintegreerd mos-circuit met beschermingsinrichting tegen overmatige ingangsspanningen. - Google Patents

Geintegreerd mos-circuit met beschermingsinrichting tegen overmatige ingangsspanningen.

Info

Publication number
NL189789C
NL189789C NLAANVRAGE8105192,A NL8105192A NL189789C NL 189789 C NL189789 C NL 189789C NL 8105192 A NL8105192 A NL 8105192A NL 189789 C NL189789 C NL 189789C
Authority
NL
Netherlands
Prior art keywords
protection against
input voltages
against excessive
mos circuit
excessive input
Prior art date
Application number
NLAANVRAGE8105192,A
Other languages
English (en)
Dutch (nl)
Other versions
NL8105192A (nl
NL189789B (nl
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Publication of NL8105192A publication Critical patent/NL8105192A/nl
Publication of NL189789B publication Critical patent/NL189789B/xx
Application granted granted Critical
Publication of NL189789C publication Critical patent/NL189789C/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
NLAANVRAGE8105192,A 1980-11-19 1981-11-16 Geintegreerd mos-circuit met beschermingsinrichting tegen overmatige ingangsspanningen. NL189789C (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT26063/80A IT1150062B (it) 1980-11-19 1980-11-19 Protezione di ingresso per circuito integrato di tipo mos, a bassa tensione di alimentazione e ad alta densita' di integrazione
IT2606380 1980-11-19

Publications (3)

Publication Number Publication Date
NL8105192A NL8105192A (nl) 1982-06-16
NL189789B NL189789B (nl) 1993-02-16
NL189789C true NL189789C (nl) 1993-07-16

Family

ID=11218547

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE8105192,A NL189789C (nl) 1980-11-19 1981-11-16 Geintegreerd mos-circuit met beschermingsinrichting tegen overmatige ingangsspanningen.

Country Status (6)

Country Link
JP (1) JPS57112076A (enrdf_load_stackoverflow)
DE (1) DE3145592A1 (enrdf_load_stackoverflow)
FR (1) FR2494501B1 (enrdf_load_stackoverflow)
GB (1) GB2090701B (enrdf_load_stackoverflow)
IT (1) IT1150062B (enrdf_load_stackoverflow)
NL (1) NL189789C (enrdf_load_stackoverflow)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4484244A (en) * 1982-09-22 1984-11-20 Rca Corporation Protection circuit for integrated circuit devices
JPS5992557A (ja) * 1982-11-18 1984-05-28 Nec Corp 入力保護回路付半導体集積回路
JPS60128653A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd 半導体集積回路装置
DE3408285A1 (de) * 1984-03-07 1985-09-19 Telefunken electronic GmbH, 7100 Heilbronn Schutzanordnung fuer einen feldeffekttransistor
DE3583301D1 (de) * 1984-03-31 1991-08-01 Toshiba Kawasaki Kk Schutzanordnung fuer einen mos-transistor.
JPS60207383A (ja) * 1984-03-31 1985-10-18 Toshiba Corp 半導体装置
JPS6153761A (ja) * 1984-08-24 1986-03-17 Hitachi Ltd 半導体装置
FR2575333B1 (fr) * 1984-12-21 1987-01-23 Radiotechnique Compelec Dispositif de protection d'un circuit integre contre les decharges electrostatiques
IT1217298B (it) * 1985-05-30 1990-03-22 Sgs Thomson Microelectronics Dispositivo di protezione da scariche elettrostatiche,in particolare per circuiti integrati bipolari
IT1186227B (it) * 1985-12-03 1987-11-18 Sgs Microelettronica Spa Dispositivo di protezione contro le sovratensioni in ingresso per un circuito integrato di tipo mos
DE3615049C2 (de) * 1986-05-03 1994-04-07 Bosch Gmbh Robert Integrierte Widerstandsanordnung mit Schutzelement gegen Verpolung und Über- bzw. Unterspannung
US5077591A (en) * 1986-09-30 1991-12-31 Texas Instruments Incorporated Electrostatic discharge protection for semiconductor input devices
US4739437A (en) * 1986-10-22 1988-04-19 Siemens-Pacesetter, Inc. Pacemaker output switch protection
JPS63198525A (ja) * 1987-02-12 1988-08-17 三菱電機株式会社 過電圧保護装置
US4875130A (en) * 1988-07-06 1989-10-17 National Semiconductor Corporation ESD low resistance input structure
US5189588A (en) * 1989-03-15 1993-02-23 Matsushita Electric Industrial Co., Ltd. Surge protection apparatus
US5212618A (en) * 1990-05-03 1993-05-18 Linear Technology Corporation Electrostatic discharge clamp using vertical NPN transistor
US5139959A (en) * 1992-01-21 1992-08-18 Motorola, Inc. Method for forming bipolar transistor input protection
US5272097A (en) * 1992-04-07 1993-12-21 Philip Shiota Method for fabricating diodes for electrostatic discharge protection and voltage references
US5591661A (en) * 1992-04-07 1997-01-07 Shiota; Philip Method for fabricating devices for electrostatic discharge protection and voltage references, and the resulting structures
US5428498A (en) * 1992-09-28 1995-06-27 Xerox Corporation Office environment level electrostatic discharge protection
FR2716294B1 (fr) 1994-01-28 1996-05-31 Sgs Thomson Microelectronics Procédé de réalisation d'un transistor bipolaire pour protection d'un circuit intégré contre les décharges électrostatiques.
US5545910A (en) * 1994-04-13 1996-08-13 Winbond Electronics Corp. ESD proctection device
EP0688054A3 (en) * 1994-06-13 1996-06-05 Symbios Logic Inc Protective structure for an integrated circuit semiconductor arrangement against electrostatic discharge
EP0851552A1 (en) * 1996-12-31 1998-07-01 STMicroelectronics S.r.l. Protection ciruit for an electric supply line in a semiconductor integrated device
DE102009015839B4 (de) 2009-04-01 2019-07-11 Austriamicrosystems Ag Integrierte ESD-Schutzschaltung
JP2013172085A (ja) * 2012-02-22 2013-09-02 Asahi Kasei Electronics Co Ltd 半導体装置の製造方法及び半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1179388A (en) * 1967-11-02 1970-01-28 Ncr Co Electrical Protective Circuit for Metal-Oxide-Semiconductor Transistors
US3739238A (en) * 1969-09-24 1973-06-12 Tokyo Shibaura Electric Co Semiconductor device with a field effect transistor
JPS5410836B1 (enrdf_load_stackoverflow) * 1970-06-26 1979-05-10
JPS526470B1 (enrdf_load_stackoverflow) * 1971-04-20 1977-02-22
NL176322C (nl) * 1976-02-24 1985-03-18 Philips Nv Halfgeleiderinrichting met beveiligingsschakeling.

Also Published As

Publication number Publication date
GB2090701B (en) 1984-09-26
FR2494501A1 (fr) 1982-05-21
NL8105192A (nl) 1982-06-16
IT8026063A0 (it) 1980-11-19
FR2494501B1 (fr) 1985-10-25
DE3145592A1 (de) 1982-07-15
GB2090701A (en) 1982-07-14
NL189789B (nl) 1993-02-16
DE3145592C2 (enrdf_load_stackoverflow) 1993-04-29
JPS57112076A (en) 1982-07-12
IT1150062B (it) 1986-12-10

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Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
V4 Discontinued because of reaching the maximum lifetime of a patent

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