JPS57112076A - Mos integrated circuit - Google Patents

Mos integrated circuit

Info

Publication number
JPS57112076A
JPS57112076A JP56183933A JP18393381A JPS57112076A JP S57112076 A JPS57112076 A JP S57112076A JP 56183933 A JP56183933 A JP 56183933A JP 18393381 A JP18393381 A JP 18393381A JP S57112076 A JPS57112076 A JP S57112076A
Authority
JP
Japan
Prior art keywords
integrated circuit
mos integrated
mos
circuit
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56183933A
Other languages
English (en)
Japanese (ja)
Inventor
Barudei Ribio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
ATES Componenti Elettronici SpA
SGS ATES Componenti Elettronici SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATES Componenti Elettronici SpA, SGS ATES Componenti Elettronici SpA filed Critical ATES Componenti Elettronici SpA
Publication of JPS57112076A publication Critical patent/JPS57112076A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
JP56183933A 1980-11-19 1981-11-18 Mos integrated circuit Pending JPS57112076A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT26063/80A IT1150062B (it) 1980-11-19 1980-11-19 Protezione di ingresso per circuito integrato di tipo mos, a bassa tensione di alimentazione e ad alta densita' di integrazione

Publications (1)

Publication Number Publication Date
JPS57112076A true JPS57112076A (en) 1982-07-12

Family

ID=11218547

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56183933A Pending JPS57112076A (en) 1980-11-19 1981-11-18 Mos integrated circuit

Country Status (6)

Country Link
JP (1) JPS57112076A (enrdf_load_stackoverflow)
DE (1) DE3145592A1 (enrdf_load_stackoverflow)
FR (1) FR2494501B1 (enrdf_load_stackoverflow)
GB (1) GB2090701B (enrdf_load_stackoverflow)
IT (1) IT1150062B (enrdf_load_stackoverflow)
NL (1) NL189789C (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60207383A (ja) * 1984-03-31 1985-10-18 Toshiba Corp 半導体装置
JP2013172085A (ja) * 2012-02-22 2013-09-02 Asahi Kasei Electronics Co Ltd 半導体装置の製造方法及び半導体装置

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4484244A (en) * 1982-09-22 1984-11-20 Rca Corporation Protection circuit for integrated circuit devices
JPS5992557A (ja) * 1982-11-18 1984-05-28 Nec Corp 入力保護回路付半導体集積回路
JPS60128653A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd 半導体集積回路装置
DE3408285A1 (de) * 1984-03-07 1985-09-19 Telefunken electronic GmbH, 7100 Heilbronn Schutzanordnung fuer einen feldeffekttransistor
DE3583301D1 (de) * 1984-03-31 1991-08-01 Toshiba Kawasaki Kk Schutzanordnung fuer einen mos-transistor.
JPS6153761A (ja) * 1984-08-24 1986-03-17 Hitachi Ltd 半導体装置
FR2575333B1 (fr) * 1984-12-21 1987-01-23 Radiotechnique Compelec Dispositif de protection d'un circuit integre contre les decharges electrostatiques
IT1217298B (it) * 1985-05-30 1990-03-22 Sgs Thomson Microelectronics Dispositivo di protezione da scariche elettrostatiche,in particolare per circuiti integrati bipolari
IT1186227B (it) * 1985-12-03 1987-11-18 Sgs Microelettronica Spa Dispositivo di protezione contro le sovratensioni in ingresso per un circuito integrato di tipo mos
DE3615049C2 (de) * 1986-05-03 1994-04-07 Bosch Gmbh Robert Integrierte Widerstandsanordnung mit Schutzelement gegen Verpolung und Über- bzw. Unterspannung
US5077591A (en) * 1986-09-30 1991-12-31 Texas Instruments Incorporated Electrostatic discharge protection for semiconductor input devices
US4739437A (en) * 1986-10-22 1988-04-19 Siemens-Pacesetter, Inc. Pacemaker output switch protection
JPS63198525A (ja) * 1987-02-12 1988-08-17 三菱電機株式会社 過電圧保護装置
US4875130A (en) * 1988-07-06 1989-10-17 National Semiconductor Corporation ESD low resistance input structure
US5189588A (en) * 1989-03-15 1993-02-23 Matsushita Electric Industrial Co., Ltd. Surge protection apparatus
US5212618A (en) * 1990-05-03 1993-05-18 Linear Technology Corporation Electrostatic discharge clamp using vertical NPN transistor
US5139959A (en) * 1992-01-21 1992-08-18 Motorola, Inc. Method for forming bipolar transistor input protection
US5272097A (en) * 1992-04-07 1993-12-21 Philip Shiota Method for fabricating diodes for electrostatic discharge protection and voltage references
US5591661A (en) * 1992-04-07 1997-01-07 Shiota; Philip Method for fabricating devices for electrostatic discharge protection and voltage references, and the resulting structures
US5428498A (en) * 1992-09-28 1995-06-27 Xerox Corporation Office environment level electrostatic discharge protection
FR2716294B1 (fr) 1994-01-28 1996-05-31 Sgs Thomson Microelectronics Procédé de réalisation d'un transistor bipolaire pour protection d'un circuit intégré contre les décharges électrostatiques.
US5545910A (en) * 1994-04-13 1996-08-13 Winbond Electronics Corp. ESD proctection device
EP0688054A3 (en) * 1994-06-13 1996-06-05 Symbios Logic Inc Protective structure for an integrated circuit semiconductor arrangement against electrostatic discharge
EP0851552A1 (en) * 1996-12-31 1998-07-01 STMicroelectronics S.r.l. Protection ciruit for an electric supply line in a semiconductor integrated device
DE102009015839B4 (de) 2009-04-01 2019-07-11 Austriamicrosystems Ag Integrierte ESD-Schutzschaltung

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS526470B1 (enrdf_load_stackoverflow) * 1971-04-20 1977-02-22

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1179388A (en) * 1967-11-02 1970-01-28 Ncr Co Electrical Protective Circuit for Metal-Oxide-Semiconductor Transistors
US3739238A (en) * 1969-09-24 1973-06-12 Tokyo Shibaura Electric Co Semiconductor device with a field effect transistor
JPS5410836B1 (enrdf_load_stackoverflow) * 1970-06-26 1979-05-10
NL176322C (nl) * 1976-02-24 1985-03-18 Philips Nv Halfgeleiderinrichting met beveiligingsschakeling.

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS526470B1 (enrdf_load_stackoverflow) * 1971-04-20 1977-02-22

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60207383A (ja) * 1984-03-31 1985-10-18 Toshiba Corp 半導体装置
JP2013172085A (ja) * 2012-02-22 2013-09-02 Asahi Kasei Electronics Co Ltd 半導体装置の製造方法及び半導体装置

Also Published As

Publication number Publication date
GB2090701B (en) 1984-09-26
FR2494501A1 (fr) 1982-05-21
NL8105192A (nl) 1982-06-16
IT8026063A0 (it) 1980-11-19
FR2494501B1 (fr) 1985-10-25
DE3145592A1 (de) 1982-07-15
GB2090701A (en) 1982-07-14
NL189789B (nl) 1993-02-16
DE3145592C2 (enrdf_load_stackoverflow) 1993-04-29
NL189789C (nl) 1993-07-16
IT1150062B (it) 1986-12-10

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