GB8303261D0 - N-channel mos integrated circuit structure - Google Patents
N-channel mos integrated circuit structureInfo
- Publication number
- GB8303261D0 GB8303261D0 GB838303261A GB8303261A GB8303261D0 GB 8303261 D0 GB8303261 D0 GB 8303261D0 GB 838303261 A GB838303261 A GB 838303261A GB 8303261 A GB8303261 A GB 8303261A GB 8303261 D0 GB8303261 D0 GB 8303261D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- integrated circuit
- channel mos
- circuit structure
- mos integrated
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US39091282A | 1982-06-22 | 1982-06-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
GB8303261D0 true GB8303261D0 (en) | 1983-03-09 |
GB2123605A GB2123605A (en) | 1984-02-01 |
Family
ID=23544471
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08303261A Withdrawn GB2123605A (en) | 1982-06-22 | 1983-02-07 | MOS integrated circuit structure and method for its fabrication |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS58225670A (en) |
GB (1) | GB2123605A (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61226942A (en) * | 1985-04-01 | 1986-10-08 | Matsushita Electronics Corp | Isolating method between elements for semiconductor integrated circuit |
JPS61292358A (en) * | 1985-06-19 | 1986-12-23 | Fujitsu Ltd | Manufacture of mis field effect transistor |
JPS61292339A (en) * | 1985-06-19 | 1986-12-23 | Fujitsu Ltd | Insulated gate type field effect transistor |
WO1989001702A1 (en) * | 1987-08-17 | 1989-02-23 | Plessey Overseas Limited | A local oxidation of silicon process |
US4909897A (en) * | 1986-06-17 | 1990-03-20 | Plessey Overseas Limited | Local oxidation of silicon process |
US4786609A (en) * | 1987-10-05 | 1988-11-22 | North American Philips Corporation, Signetics Division | Method of fabricating field-effect transistor utilizing improved gate sidewall spacers |
FR2624653B1 (en) * | 1987-12-14 | 1991-10-11 | Sgs Thomson Microelectronics | METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT COMPRISING MEDIUM VOLTAGE MOS TRANSISTORS |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL165005C (en) * | 1969-06-26 | 1981-02-16 | Philips Nv | SEMICONDUCTOR DEVICE CONTAINING FIELD EFFECT TRANSISTORS WITH INSULATED CONTROL ELECTRODE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE. |
US3753806A (en) * | 1970-09-23 | 1973-08-21 | Motorola Inc | Increasing field inversion voltage of metal oxide on silicon integrated circuits |
US3728161A (en) * | 1971-12-28 | 1973-04-17 | Bell Telephone Labor Inc | Integrated circuits with ion implanted chan stops |
JPS5611226B2 (en) * | 1973-01-09 | 1981-03-12 | ||
GB1432309A (en) * | 1973-03-02 | 1976-04-14 | Signetics Corp | Semiconductor structures |
DE2842589A1 (en) * | 1978-09-29 | 1980-05-08 | Siemens Ag | FIELD EFFECT TRANSISTOR WITH REDUCED SUBSTRATE CONTROL OF CHANNEL WIDTH |
WO1981002493A1 (en) * | 1980-02-22 | 1981-09-03 | Mostek Corp | Self-aligned buried contact and method of making |
US4315781A (en) * | 1980-04-23 | 1982-02-16 | Hughes Aircraft Company | Method of controlling MOSFET threshold voltage with self-aligned channel stop |
GB2084794B (en) * | 1980-10-03 | 1984-07-25 | Philips Electronic Associated | Methods of manufacturing insulated gate field effect transistors |
-
1983
- 1983-02-07 GB GB08303261A patent/GB2123605A/en not_active Withdrawn
- 1983-05-12 JP JP58083459A patent/JPS58225670A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS58225670A (en) | 1983-12-27 |
GB2123605A (en) | 1984-02-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |