NL152708B - Halfgeleiderinrichting met een veldeffecttransistor met geisoleerde poortelektrode. - Google Patents

Halfgeleiderinrichting met een veldeffecttransistor met geisoleerde poortelektrode.

Info

Publication number
NL152708B
NL152708B NL676703134A NL6703134A NL152708B NL 152708 B NL152708 B NL 152708B NL 676703134 A NL676703134 A NL 676703134A NL 6703134 A NL6703134 A NL 6703134A NL 152708 B NL152708 B NL 152708B
Authority
NL
Netherlands
Prior art keywords
semiconductor device
gate electrode
field effect
effect transistor
insulated gate
Prior art date
Application number
NL676703134A
Other languages
English (en)
Dutch (nl)
Other versions
NL6703134A (en, 2012
Inventor
Rijkert Jan Ir Nienhuis
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL676703134A priority Critical patent/NL152708B/xx
Priority to DE1639349A priority patent/DE1639349C3/de
Priority to US703065A priority patent/US3484865A/en
Priority to GB1228472D priority patent/GB1228472A/en
Priority to GB1228471D priority patent/GB1228471A/en
Priority to SE02457/68A priority patent/SE332030B/xx
Priority to BE711301D priority patent/BE711301A/xx
Priority to CH270568A priority patent/CH482304A/de
Priority to DK75168AA priority patent/DK119936B/da
Priority to AT179268A priority patent/AT278903B/de
Priority to FR1555193D priority patent/FR1555193A/fr
Publication of NL6703134A publication Critical patent/NL6703134A/xx
Publication of NL152708B publication Critical patent/NL152708B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
NL676703134A 1967-02-28 1967-02-28 Halfgeleiderinrichting met een veldeffecttransistor met geisoleerde poortelektrode. NL152708B (nl)

Priority Applications (11)

Application Number Priority Date Filing Date Title
NL676703134A NL152708B (nl) 1967-02-28 1967-02-28 Halfgeleiderinrichting met een veldeffecttransistor met geisoleerde poortelektrode.
DE1639349A DE1639349C3 (de) 1967-02-28 1968-01-30 Feldeffekt-Transistor mit isolierter Gate-Elektrode, Verfahren zu seiner Herstellung und Verwendung eines solchen Feldeffekt-Transistors in einer integrierten Schaltung
US703065A US3484865A (en) 1967-02-28 1968-02-05 Integrated semiconductor device including igfet with interdigitated structure
GB1228472D GB1228472A (en, 2012) 1967-02-28 1968-02-23
GB1228471D GB1228471A (en, 2012) 1967-02-28 1968-02-23
SE02457/68A SE332030B (en, 2012) 1967-02-28 1968-02-26
BE711301D BE711301A (en, 2012) 1967-02-28 1968-02-26
CH270568A CH482304A (de) 1967-02-28 1968-02-26 Halbleitervorrichtung mit einem Feldeffekt-Transistor mit isolierter Torelektrode, Verfahren zur Herstellung und zum Betrieb der Halbleitervorrichtung
DK75168AA DK119936B (da) 1967-02-28 1968-02-26 Halvlederapparat indeholdende en felteffekttransistor med isoleret styreelektrode og fremgangsmåde til fremstilling af et sådant halvlederapparat.
AT179268A AT278903B (de) 1967-02-28 1968-02-26 Halbleitervorrichtung mit einem Feldeffekt-Transistor mit isolierter Torelektrode, Verfahren zur Herstellung einer solchen Halbleitervorrichtung und Schaltungsanordnung mit einer solchen Halbleitervorrichtung
FR1555193D FR1555193A (en, 2012) 1967-02-28 1968-02-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL676703134A NL152708B (nl) 1967-02-28 1967-02-28 Halfgeleiderinrichting met een veldeffecttransistor met geisoleerde poortelektrode.

Publications (2)

Publication Number Publication Date
NL6703134A NL6703134A (en, 2012) 1968-08-29
NL152708B true NL152708B (nl) 1977-03-15

Family

ID=19799418

Family Applications (1)

Application Number Title Priority Date Filing Date
NL676703134A NL152708B (nl) 1967-02-28 1967-02-28 Halfgeleiderinrichting met een veldeffecttransistor met geisoleerde poortelektrode.

Country Status (10)

Country Link
US (1) US3484865A (en, 2012)
AT (1) AT278903B (en, 2012)
BE (1) BE711301A (en, 2012)
CH (1) CH482304A (en, 2012)
DE (1) DE1639349C3 (en, 2012)
DK (1) DK119936B (en, 2012)
FR (1) FR1555193A (en, 2012)
GB (2) GB1228472A (en, 2012)
NL (1) NL152708B (en, 2012)
SE (1) SE332030B (en, 2012)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE788874A (fr) * 1971-09-17 1973-01-02 Western Electric Co Module de circuit integre
US4206469A (en) * 1978-09-15 1980-06-03 Westinghouse Electric Corp. Power metal-oxide-semiconductor-field-effect-transistor
US5130767C1 (en) * 1979-05-14 2001-08-14 Int Rectifier Corp Plural polygon source pattern for mosfet
US4329705A (en) * 1979-05-21 1982-05-11 Exxon Research & Engineering Co. VMOS/Bipolar power switching device
US4303841A (en) * 1979-05-21 1981-12-01 Exxon Research & Engineering Co. VMOS/Bipolar power switch
US4462041A (en) * 1981-03-20 1984-07-24 Harris Corporation High speed and current gain insulated gate field effect transistors
JPS5879779A (ja) * 1981-11-06 1983-05-13 Clarion Co Ltd 弾性表面波コンボルバ
US4721986A (en) * 1984-02-21 1988-01-26 International Rectifier Corporation Bidirectional output semiconductor field effect transistor and method for its maufacture
JP2604777B2 (ja) * 1988-01-18 1997-04-30 松下電工株式会社 二重拡散型電界効果半導体装置の製法
GB2257830B (en) * 1991-07-12 1995-04-05 Matsushita Electric Works Ltd Low output-capacity, double-diffused field effect transistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL299911A (en, 2012) * 1951-08-02

Also Published As

Publication number Publication date
GB1228472A (en, 2012) 1971-04-15
CH482304A (de) 1969-11-30
SE332030B (en, 2012) 1971-01-25
AT278903B (de) 1970-02-25
DK119936B (da) 1971-03-15
BE711301A (en, 2012) 1968-08-26
DE1639349A1 (de) 1971-02-04
NL6703134A (en, 2012) 1968-08-29
GB1228471A (en, 2012) 1971-04-15
US3484865A (en) 1969-12-16
FR1555193A (en, 2012) 1969-01-24
DE1639349C3 (de) 1980-07-10
DE1639349B2 (de) 1979-10-25

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: PHILIPS