NL155403B - Schakeling voorzien van een veldeffecttransistor met geisoleerde stuurelektrode en een beschermingsdiode. - Google Patents
Schakeling voorzien van een veldeffecttransistor met geisoleerde stuurelektrode en een beschermingsdiode.Info
- Publication number
- NL155403B NL155403B NL686816133A NL6816133A NL155403B NL 155403 B NL155403 B NL 155403B NL 686816133 A NL686816133 A NL 686816133A NL 6816133 A NL6816133 A NL 6816133A NL 155403 B NL155403 B NL 155403B
- Authority
- NL
- Netherlands
- Prior art keywords
- field effect
- effect transistor
- control electrode
- protection diode
- circuit equipped
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
- G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/764—Air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NLAANVRAGE7800846,A NL173580C (nl) | 1967-11-13 | 1978-01-24 | Halfgeleiderinrichting omvattende een veldeffekttransistor met een geisoleerde stuurelektrode en een met de stuurelektrode verbonden beschermingsdiode in een gemeenschappelijk halfgeleiderlichaam. |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7263167A JPS468255B1 (nl) | 1967-11-13 | 1967-11-13 | |
JP7263067A JPS4632972B1 (nl) | 1967-11-13 | 1967-11-13 | |
JP7262967A JPS468254B1 (nl) | 1967-11-13 | 1967-11-13 | |
JP7305567A JPS4712496B1 (nl) | 1967-11-13 | 1967-11-15 | |
JP7305667A JPS479613B1 (nl) | 1967-11-13 | 1967-11-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
NL6816133A NL6816133A (nl) | 1969-05-16 |
NL155403B true NL155403B (nl) | 1977-12-15 |
Family
ID=27524396
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL686816133A NL155403B (nl) | 1967-11-13 | 1968-11-13 | Schakeling voorzien van een veldeffecttransistor met geisoleerde stuurelektrode en een beschermingsdiode. |
NLAANVRAGE7800846,A NL173580C (nl) | 1967-11-13 | 1978-01-24 | Halfgeleiderinrichting omvattende een veldeffekttransistor met een geisoleerde stuurelektrode en een met de stuurelektrode verbonden beschermingsdiode in een gemeenschappelijk halfgeleiderlichaam. |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7800846,A NL173580C (nl) | 1967-11-13 | 1978-01-24 | Halfgeleiderinrichting omvattende een veldeffekttransistor met een geisoleerde stuurelektrode en een met de stuurelektrode verbonden beschermingsdiode in een gemeenschappelijk halfgeleiderlichaam. |
Country Status (6)
Country | Link |
---|---|
US (1) | US3934159A (nl) |
JP (5) | JPS4632972B1 (nl) |
DE (1) | DE1808661A1 (nl) |
FR (1) | FR1603516A (nl) |
GB (1) | GB1238360A (nl) |
NL (2) | NL155403B (nl) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7107040A (nl) * | 1971-05-22 | 1972-11-24 | ||
CH614831B (de) * | 1974-05-08 | Sharp Kk | Auf beruehrung ansprechende schalteinrichtung fuer elektronische armbanduhren. | |
JPS5153483A (nl) * | 1974-11-06 | 1976-05-11 | Hitachi Ltd | |
JPS5422862B2 (nl) * | 1974-11-22 | 1979-08-09 | ||
US4099074A (en) * | 1975-03-06 | 1978-07-04 | Sharp Kabushiki Kaisha | Touch sensitive electronic switching circuitry for electronic wristwatches |
JPS51111042A (en) * | 1975-03-26 | 1976-10-01 | Hitachi Ltd | Gate circuit |
US3967295A (en) * | 1975-04-03 | 1976-06-29 | Rca Corporation | Input transient protection for integrated circuit element |
US4209713A (en) * | 1975-07-18 | 1980-06-24 | Tokyo Shibaura Electric Co., Ltd. | Semiconductor integrated circuit device in which difficulties caused by parasitic transistors are eliminated |
US4149176A (en) * | 1975-07-18 | 1979-04-10 | Tokyo Shibaura Electric Co., Ltd. | Complementary MOSFET device |
US4168442A (en) * | 1975-07-18 | 1979-09-18 | Tokyo Shibaura Electric Co., Ltd. | CMOS FET device with abnormal current flow prevention |
US4167747A (en) * | 1975-07-18 | 1979-09-11 | Tokyo Shibaura Electric Co., Ltd. | Complementary mosfet device and method of manufacturing the same |
US4143391A (en) * | 1975-09-12 | 1979-03-06 | Tokyo Shibaura Electric Co., Ltd. | Integrated circuit device |
US4100561A (en) * | 1976-05-24 | 1978-07-11 | Rca Corp. | Protective circuit for MOS devices |
US4057844A (en) * | 1976-06-24 | 1977-11-08 | American Microsystems, Inc. | MOS input protection structure |
JPS5318390A (en) * | 1976-08-03 | 1978-02-20 | Toshiba Corp | Mos type field effect transistor circuit |
DE2644402C2 (de) * | 1976-10-01 | 1978-08-24 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Elektronischer Schalter |
US4476476A (en) * | 1979-04-05 | 1984-10-09 | National Semiconductor Corporation | CMOS Input and output protection circuit |
FR2509563A1 (fr) * | 1981-07-10 | 1983-01-14 | Thomson Csf | Dispositif support de circuits integres utilise dans un systeme de selection de circuits integres a haute fiabilite |
IT1211141B (it) * | 1981-12-04 | 1989-09-29 | Ates Componenti Elettron | Circuito limitatore-trasduttore disegnali in alternata codificati in forma binaria, come stadio d'ingresso di un circuito integrato a igfet. |
US4626882A (en) * | 1984-07-18 | 1986-12-02 | International Business Machines Corporation | Twin diode overvoltage protection structure |
JPS6132464A (ja) * | 1984-07-24 | 1986-02-15 | Nec Corp | Cmos型集積回路装置 |
US4757363A (en) * | 1984-09-14 | 1988-07-12 | Harris Corporation | ESD protection network for IGFET circuits with SCR prevention guard rings |
GB9115699D0 (en) * | 1991-07-19 | 1991-09-04 | Philips Electronic Associated | An overvoltage protected semiconductor switch |
US5629544A (en) * | 1995-04-25 | 1997-05-13 | International Business Machines Corporation | Semiconductor diode with silicide films and trench isolation |
US6084274A (en) * | 1996-09-27 | 2000-07-04 | Sony Corporation | Semiconductor memory cell and its fabrication process |
TW374246B (en) * | 1998-02-07 | 1999-11-11 | United Microelectronics Corp | Flash memory cell structure and method for manufacturing the same |
US6560081B1 (en) * | 2000-10-17 | 2003-05-06 | National Semiconductor Corporation | Electrostatic discharge (ESD) protection circuit |
DE102008011816B4 (de) | 2008-02-29 | 2015-05-28 | Advanced Micro Devices, Inc. | Temperaturüberwachung in einem Halbleiterbauelement unter Anwendung eines pn-Übergangs auf der Grundlage von Silizium/Germaniummaterial |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3408511A (en) * | 1966-05-13 | 1968-10-29 | Motorola Inc | Chopper circuit capable of handling large bipolarity signals |
-
1967
- 1967-11-13 JP JP7263067A patent/JPS4632972B1/ja active Pending
- 1967-11-13 JP JP7263167A patent/JPS468255B1/ja active Pending
- 1967-11-13 JP JP7262967A patent/JPS468254B1/ja active Pending
- 1967-11-15 JP JP7305567A patent/JPS4712496B1/ja active Pending
- 1967-11-15 JP JP7305667A patent/JPS479613B1/ja active Pending
-
1968
- 1968-10-18 US US04/768,794 patent/US3934159A/en not_active Expired - Lifetime
- 1968-11-05 GB GB5231768A patent/GB1238360A/en not_active Expired
- 1968-11-06 FR FR17270568A patent/FR1603516A/fr not_active Expired
- 1968-11-13 DE DE19681808661 patent/DE1808661A1/de active Pending
- 1968-11-13 NL NL686816133A patent/NL155403B/nl not_active IP Right Cessation
-
1978
- 1978-01-24 NL NLAANVRAGE7800846,A patent/NL173580C/nl not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPS468255B1 (nl) | 1971-03-02 |
DE1808661A1 (de) | 1969-06-04 |
NL7800846A (nl) | 1978-05-31 |
NL173580B (nl) | 1983-09-01 |
JPS479613B1 (nl) | 1972-03-22 |
JPS4632972B1 (nl) | 1971-09-27 |
US3934159A (en) | 1976-01-20 |
JPS468254B1 (nl) | 1971-03-02 |
NL173580C (nl) | 1984-02-01 |
GB1238360A (nl) | 1971-07-07 |
FR1603516A (nl) | 1971-05-03 |
JPS4712496B1 (nl) | 1972-04-18 |
NL6816133A (nl) | 1969-05-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NL80 | Information provided on patent owner name for an already discontinued patent |
Owner name: HITACHI |
|
V4 | Discontinued because of reaching the maximum lifetime of a patent |