NL133151C - - Google Patents
Info
- Publication number
- NL133151C NL133151C NL133151DA NL133151C NL 133151 C NL133151 C NL 133151C NL 133151D A NL133151D A NL 133151DA NL 133151 C NL133151 C NL 133151C
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B41/00—Obtaining germanium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/08—Germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/006—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/026—Deposition thru hole in mask
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/05—Etch and refill
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/056—Gallium arsenide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/071—Heating, selective
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/135—Removal of substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/925—Fluid growth doping control, e.g. delta doping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/979—Tunnel diodes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Electrochemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Bipolar Transistors (AREA)
- Weting (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US816573A US3000768A (en) | 1959-05-28 | 1959-05-28 | Semiconductor device with controlled zone thickness |
US816572A US3047438A (en) | 1959-05-28 | 1959-05-28 | Epitaxial semiconductor deposition and apparatus |
US863318A US3014820A (en) | 1959-05-28 | 1959-12-31 | Vapor grown semiconductor device |
US35804A US3100166A (en) | 1959-05-28 | 1960-06-13 | Formation of semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
NL133151C true NL133151C (xx) | 1900-01-01 |
Family
ID=27488329
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL251614D NL251614A (xx) | 1959-05-28 | ||
NL133151D NL133151C (xx) | 1959-05-28 | ||
NL262369D NL262369A (xx) | 1959-05-28 | ||
NL256300D NL256300A (xx) | 1959-05-28 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL251614D NL251614A (xx) | 1959-05-28 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL262369D NL262369A (xx) | 1959-05-28 | ||
NL256300D NL256300A (xx) | 1959-05-28 |
Country Status (4)
Country | Link |
---|---|
US (4) | US3000768A (xx) |
DE (3) | DE1146982B (xx) |
GB (4) | GB916887A (xx) |
NL (4) | NL256300A (xx) |
Families Citing this family (75)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL265823A (xx) * | 1960-06-13 | |||
NL268758A (xx) * | 1960-09-20 | |||
DE1498891A1 (de) * | 1960-12-06 | 1969-02-06 | Siemens Ag | Verfahren zur Bestimmung der Konzentration von aktiven Verunreinigungen in einer zur Darstellung eines halbleitenden Elements geeigneten Verbindung |
NL275516A (xx) * | 1961-03-02 | |||
NL273326A (xx) * | 1961-04-14 | |||
US3210624A (en) * | 1961-04-24 | 1965-10-05 | Monsanto Co | Article having a silicon carbide substrate with an epitaxial layer of boron phosphide |
NL265122A (xx) * | 1961-05-24 | |||
DE1137807B (de) * | 1961-06-09 | 1962-10-11 | Siemens Ag | Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase |
US3172792A (en) * | 1961-07-05 | 1965-03-09 | Epitaxial deposition in a vacuum onto semiconductor wafers through an in- teracttgn between the wafer and the support material | |
FR1303635A (fr) * | 1961-08-04 | 1962-09-14 | Csf | Procédé de fabrication de dispositifs à semi-conducteur |
US3219891A (en) * | 1961-09-18 | 1965-11-23 | Merck & Co Inc | Semiconductor diode device for providing a constant voltage |
NL283619A (xx) * | 1961-10-06 | |||
US3237062A (en) * | 1961-10-20 | 1966-02-22 | Westinghouse Electric Corp | Monolithic semiconductor devices |
US3189973A (en) * | 1961-11-27 | 1965-06-22 | Bell Telephone Labor Inc | Method of fabricating a semiconductor device |
US3200018A (en) * | 1962-01-29 | 1965-08-10 | Hughes Aircraft Co | Controlled epitaxial crystal growth by focusing electromagnetic radiation |
US3223904A (en) * | 1962-02-19 | 1965-12-14 | Motorola Inc | Field effect device and method of manufacturing the same |
US3213827A (en) * | 1962-03-13 | 1965-10-26 | Union Carbide Corp | Apparatus for gas plating bulk material to metallize the same |
US3178798A (en) * | 1962-05-09 | 1965-04-20 | Ibm | Vapor deposition process wherein the vapor contains both donor and acceptor impurities |
NL294124A (xx) * | 1962-06-18 | |||
US3234058A (en) * | 1962-06-27 | 1966-02-08 | Ibm | Method of forming an integral masking fixture by epitaxial growth |
US3296040A (en) * | 1962-08-17 | 1967-01-03 | Fairchild Camera Instr Co | Epitaxially growing layers of semiconductor through openings in oxide mask |
NL296876A (xx) * | 1962-08-23 | |||
US3399072A (en) * | 1963-03-04 | 1968-08-27 | North American Rockwell | Magnetic materials |
US3316130A (en) * | 1963-05-07 | 1967-04-25 | Gen Electric | Epitaxial growth of semiconductor devices |
US3317801A (en) * | 1963-06-19 | 1967-05-02 | Jr Freeman D Shepherd | Tunneling enhanced transistor |
US3316131A (en) * | 1963-08-15 | 1967-04-25 | Texas Instruments Inc | Method of producing a field-effect transistor |
US3206339A (en) * | 1963-09-30 | 1965-09-14 | Philco Corp | Method of growing geometricallydefined epitaxial layer without formation of undesirable crystallites |
US3278347A (en) * | 1963-11-26 | 1966-10-11 | Int Rectifier Corp | High voltage semiconductor device |
US3290188A (en) * | 1964-01-10 | 1966-12-06 | Hoffman Electronics Corp | Epitaxial alloy semiconductor devices and process for making them |
US3797102A (en) * | 1964-04-30 | 1974-03-19 | Motorola Inc | Method of making semiconductor devices |
US3502516A (en) * | 1964-11-06 | 1970-03-24 | Siemens Ag | Method for producing pure semiconductor material for electronic purposes |
US3332143A (en) * | 1964-12-28 | 1967-07-25 | Gen Electric | Semiconductor devices with epitaxial contour |
US3409482A (en) * | 1964-12-30 | 1968-11-05 | Sprague Electric Co | Method of making a transistor with a very thin diffused base and an epitaxially grown emitter |
US3793712A (en) * | 1965-02-26 | 1974-02-26 | Texas Instruments Inc | Method of forming circuit components within a substrate |
DE1297586B (de) * | 1965-04-20 | 1969-06-19 | Halbleiterwerk Frankfurt Oder | Verfahren zur Herstellung epitaktischer Halbleiterschichten mit Hilfe einer chemischen Transportreaktion |
US3370995A (en) * | 1965-08-02 | 1968-02-27 | Texas Instruments Inc | Method for fabricating electrically isolated semiconductor devices in integrated circuits |
US3322581A (en) * | 1965-10-24 | 1967-05-30 | Texas Instruments Inc | Fabrication of a metal base transistor |
US3425879A (en) * | 1965-10-24 | 1969-02-04 | Texas Instruments Inc | Method of making shaped epitaxial deposits |
GB1094457A (en) * | 1965-11-27 | 1967-12-13 | Ferranti Ltd | Improvements relating to the manufacture of thermo-electric generators |
US3473976A (en) * | 1966-03-31 | 1969-10-21 | Ibm | Carrier lifetime killer doping process for semiconductor structures and the product formed thereby |
US3453154A (en) * | 1966-06-17 | 1969-07-01 | Globe Union Inc | Process for establishing low zener breakdown voltages in semiconductor regulators |
US3446659A (en) * | 1966-09-16 | 1969-05-27 | Texas Instruments Inc | Apparatus and process for growing noncontaminated thermal oxide on silicon |
US3421933A (en) * | 1966-12-14 | 1969-01-14 | North American Rockwell | Spinel ferrite epitaxial composite |
US3524776A (en) * | 1967-01-30 | 1970-08-18 | Corning Glass Works | Process for coating silicon wafers |
US3470038A (en) * | 1967-02-17 | 1969-09-30 | Bell Telephone Labor Inc | Electroluminescent p-n junction device and preparation thereof |
DE1769605A1 (de) * | 1968-06-14 | 1971-07-01 | Siemens Ag | Verfahren zum Herstellen epitaktischer Aufwachsschichten aus Halbleitermaterial fuer elektrische Bauelemente |
DE1900116C3 (de) * | 1969-01-02 | 1978-10-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen hxxochreiner, aus Silicium bestehender einkristalliner Schichten |
US3836408A (en) * | 1970-12-21 | 1974-09-17 | Hitachi Ltd | Production of epitaxial films of semiconductor compound material |
FR2133498B1 (xx) * | 1971-04-15 | 1977-06-03 | Labo Electronique Physique | |
US3805736A (en) * | 1971-12-27 | 1974-04-23 | Ibm | Apparatus for diffusion limited mass transport |
JPS5137915B2 (xx) * | 1973-10-19 | 1976-10-19 | ||
US4047496A (en) * | 1974-05-31 | 1977-09-13 | Applied Materials, Inc. | Epitaxial radiation heated reactor |
US4081313A (en) * | 1975-01-24 | 1978-03-28 | Applied Materials, Inc. | Process for preparing semiconductor wafers with substantially no crystallographic slip |
JPS5814644B2 (ja) * | 1975-05-14 | 1983-03-22 | 松下電器産業株式会社 | ヒカリデンソウロノセイゾウホウホウ |
US4053350A (en) * | 1975-07-11 | 1977-10-11 | Rca Corporation | Methods of defining regions of crystalline material of the group iii-v compounds |
US4048955A (en) * | 1975-09-02 | 1977-09-20 | Texas Instruments Incorporated | Continuous chemical vapor deposition reactor |
US4115163A (en) * | 1976-01-08 | 1978-09-19 | Yulia Ivanovna Gorina | Method of growing epitaxial semiconductor films utilizing radiant heating |
US4063529A (en) * | 1977-04-19 | 1977-12-20 | Ellin Petrovich Bochkarev | Device for epitaxial growing of semiconductor periodic structures from gas phase |
US4275094A (en) * | 1977-10-31 | 1981-06-23 | Fujitsu Limited | Process for high pressure oxidation of silicon |
US4421592A (en) * | 1981-05-22 | 1983-12-20 | United Technologies Corporation | Plasma enhanced deposition of semiconductors |
US4609424A (en) * | 1981-05-22 | 1986-09-02 | United Technologies Corporation | Plasma enhanced deposition of semiconductors |
JPS60116778A (ja) * | 1983-11-23 | 1985-06-24 | ジエミニ リサーチ,インコーポレイテツド | 化学蒸着方法及び装置 |
US4649261A (en) * | 1984-02-28 | 1987-03-10 | Tamarack Scientific Co., Inc. | Apparatus for heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc. |
US4698486A (en) * | 1984-02-28 | 1987-10-06 | Tamarack Scientific Co., Inc. | Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc. |
GB2196019A (en) * | 1986-10-07 | 1988-04-20 | Cambridge Instr Ltd | Metalorganic chemical vapour deposition |
US5259883A (en) * | 1988-02-16 | 1993-11-09 | Kabushiki Kaisha Toshiba | Method of thermally processing semiconductor wafers and an apparatus therefor |
JPH0897159A (ja) * | 1994-09-29 | 1996-04-12 | Handotai Process Kenkyusho:Kk | エピタキシャル成長方法および成長装置 |
US6594446B2 (en) | 2000-12-04 | 2003-07-15 | Vortek Industries Ltd. | Heat-treating methods and systems |
DE10128091C1 (de) * | 2001-06-11 | 2002-10-02 | Applied Films Gmbh & Co Kg | Vorrichtung für die Beschichtung eines flächigen Substrats |
KR101067902B1 (ko) | 2001-12-26 | 2011-09-27 | 맷슨 테크날러지 캐나다 인코퍼레이티드 | 온도 측정 및 열처리 방법과 시스템 |
DE10393962B4 (de) | 2002-12-20 | 2019-03-14 | Mattson Technology Inc. | Verfahren und Vorrichtung zum Stützen eines Werkstücks und zur Wärmebehandlung des Werkstücks |
JP5630935B2 (ja) | 2003-12-19 | 2014-11-26 | マトソン テクノロジー、インコーポレイテッド | 工作物の熱誘起運動を抑制する機器及び装置 |
US8454356B2 (en) | 2006-11-15 | 2013-06-04 | Mattson Technology, Inc. | Systems and methods for supporting a workpiece during heat-treating |
KR20090035869A (ko) * | 2007-10-08 | 2009-04-13 | 삼성전자주식회사 | 유기 반도체 소자 |
US9070590B2 (en) | 2008-05-16 | 2015-06-30 | Mattson Technology, Inc. | Workpiece breakage prevention method and apparatus |
Family Cites Families (22)
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BE420834A (xx) * | 1936-03-30 | |||
US2438892A (en) * | 1943-07-28 | 1948-04-06 | Bell Telephone Labor Inc | Electrical translating materials and devices and methods of making them |
DE883784C (de) * | 1949-04-06 | 1953-06-03 | Sueddeutsche App Fabrik G M B | Verfahren zur Herstellung von Flaechengleichrichtern und Kristallverstaerkerschichten aus Elementen |
US2602033A (en) * | 1950-01-18 | 1952-07-01 | Bell Telephone Labor Inc | Carbonyl process |
BE502229A (xx) * | 1950-03-31 | |||
NL99536C (xx) * | 1951-03-07 | 1900-01-01 | ||
US2796562A (en) * | 1952-06-02 | 1957-06-18 | Rca Corp | Semiconductive device and method of fabricating same |
US2763581A (en) * | 1952-11-25 | 1956-09-18 | Raytheon Mfg Co | Process of making p-n junction crystals |
BE529698A (xx) * | 1953-06-19 | |||
DE960268C (de) * | 1953-09-20 | 1957-03-21 | Siemens Ag | Verfahren zum verarmungsverhindernden Schmelzen von Verbindungen mit wesentlich verschiedenen Partialdampfdrucken ueber der Schmelze |
GB745698A (en) * | 1953-09-25 | 1956-02-29 | Standard Telephones Cables Ltd | Improvements in or relating to methods of producing silicon of high purity |
US2846346A (en) * | 1954-03-26 | 1958-08-05 | Philco Corp | Semiconductor device |
US2900584A (en) * | 1954-06-16 | 1959-08-18 | Motorola Inc | Transistor method and product |
DE1029803B (de) * | 1954-09-18 | 1958-05-14 | Siemens Ag | Verfahren zur Herstellung einer Verbindung oder einer Legierung in kristalliner Form durch Zusammen-schmelzen der Komponenten in einem abgeschlossenen System |
US2804405A (en) * | 1954-12-24 | 1957-08-27 | Bell Telephone Labor Inc | Manufacture of silicon devices |
US2885609A (en) * | 1955-01-31 | 1959-05-05 | Philco Corp | Semiconductive device and method for the fabrication thereof |
US2845374A (en) * | 1955-05-23 | 1958-07-29 | Texas Instruments Inc | Semiconductor unit and method of making same |
FR1131213A (fr) * | 1955-09-09 | 1957-02-19 | Csf | Procédé et appareil de contrôle de l'épaisseur d'un échantillon de semi-conducteur au cours d'une attaque électrolytique |
US2766144A (en) * | 1955-10-31 | 1956-10-09 | Lidow Eric | Photocell |
NL105577C (xx) * | 1955-11-04 | |||
DE1029485B (de) * | 1956-08-27 | 1958-05-08 | Telefunken Gmbh | Verfahren zum Anbringen eines Zuleitungsdrahtes an der Oberflaeche eines halbleitenden Koerpers |
US2898248A (en) * | 1957-05-15 | 1959-08-04 | Ibm | Method of fabricating germanium bodies |
-
0
- NL NL251614D patent/NL251614A/xx unknown
- NL NL133151D patent/NL133151C/xx active
- NL NL262369D patent/NL262369A/xx unknown
- NL NL256300D patent/NL256300A/xx unknown
-
1959
- 1959-05-28 US US816573A patent/US3000768A/en not_active Expired - Lifetime
- 1959-05-28 US US816572A patent/US3047438A/en not_active Expired - Lifetime
- 1959-12-31 US US863318A patent/US3014820A/en not_active Expired - Lifetime
-
1960
- 1960-05-06 GB GB16151/60A patent/GB916887A/en not_active Expired
- 1960-05-12 GB GB16840/60A patent/GB891572A/en not_active Expired
- 1960-05-28 DE DEJ18210A patent/DE1146982B/de active Pending
- 1960-06-13 US US35804A patent/US3100166A/en not_active Expired - Lifetime
- 1960-09-20 GB GB32266/60A patent/GB916888A/en not_active Expired
- 1960-09-28 DE DEJ18778A patent/DE1178827B/de active Pending
-
1961
- 1961-03-09 DE DEJ19553A patent/DE1222586B/de active Pending
- 1961-03-13 GB GB9152/61A patent/GB974750A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3000768A (en) | 1961-09-19 |
DE1178827B (de) | 1964-10-01 |
US3014820A (en) | 1961-12-26 |
US3047438A (en) | 1962-07-31 |
NL256300A (xx) | 1900-01-01 |
US3100166A (en) | 1963-08-06 |
NL262369A (xx) | 1900-01-01 |
GB891572A (en) | 1962-03-14 |
GB916887A (en) | 1963-01-30 |
NL251614A (xx) | 1900-01-01 |
DE1222586B (de) | 1966-08-11 |
GB974750A (en) | 1964-11-11 |
DE1146982B (de) | 1963-04-11 |
GB916888A (en) | 1963-01-30 |