NL1004886C2 - Halfgeleiderinrichtingen en werkwijze voor het maken daarvan. - Google Patents

Halfgeleiderinrichtingen en werkwijze voor het maken daarvan. Download PDF

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Publication number
NL1004886C2
NL1004886C2 NL1004886A NL1004886A NL1004886C2 NL 1004886 C2 NL1004886 C2 NL 1004886C2 NL 1004886 A NL1004886 A NL 1004886A NL 1004886 A NL1004886 A NL 1004886A NL 1004886 C2 NL1004886 C2 NL 1004886C2
Authority
NL
Netherlands
Prior art keywords
gas
semiconductor layer
substrate
temperature
silicon
Prior art date
Application number
NL1004886A
Other languages
English (en)
Dutch (nl)
Inventor
Rudolf Emmanuel Isidor Schropp
Hans Meiling
Original Assignee
Univ Utrecht
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Utrecht filed Critical Univ Utrecht
Priority to NL1004886A priority Critical patent/NL1004886C2/nl
Priority to AU58591/98A priority patent/AU5859198A/en
Priority to EP97954446A priority patent/EP0946783B1/en
Priority to JP52837998A priority patent/JP2001506809A/ja
Priority to KR10-1999-7005748A priority patent/KR100537478B1/ko
Priority to PCT/EP1997/007195 priority patent/WO1998028463A1/en
Priority to US09/331,528 priority patent/US6686230B2/en
Application granted granted Critical
Publication of NL1004886C2 publication Critical patent/NL1004886C2/nl
Priority to US09/804,753 priority patent/US20010052596A1/en
Priority to US09/852,999 priority patent/US6750474B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/907—Continuous processing
    • Y10S438/908—Utilizing cluster apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/91—Controlling charging state at semiconductor-insulator interface

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
NL1004886A 1996-12-23 1996-12-23 Halfgeleiderinrichtingen en werkwijze voor het maken daarvan. NL1004886C2 (nl)

Priority Applications (9)

Application Number Priority Date Filing Date Title
NL1004886A NL1004886C2 (nl) 1996-12-23 1996-12-23 Halfgeleiderinrichtingen en werkwijze voor het maken daarvan.
AU58591/98A AU5859198A (en) 1996-12-23 1997-12-18 Semiconducting devices and method of making thereof
EP97954446A EP0946783B1 (en) 1996-12-23 1997-12-18 Semiconducting devices and method of making thereof
JP52837998A JP2001506809A (ja) 1996-12-23 1997-12-18 半導体装置及びその製造方法
KR10-1999-7005748A KR100537478B1 (ko) 1996-12-23 1997-12-18 반도체장치를 제조하기 위한 프로세스와, 이를 수행하기 위한 진공실
PCT/EP1997/007195 WO1998028463A1 (en) 1996-12-23 1997-12-18 Semiconducting devices and method of making thereof
US09/331,528 US6686230B2 (en) 1996-12-23 1997-12-18 Semiconducting devices and method of making thereof
US09/804,753 US20010052596A1 (en) 1996-12-23 2001-03-13 Semiconducting devices and method of making thereof
US09/852,999 US6750474B1 (en) 1996-12-23 2001-05-10 Semiconducting devices and method of making thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL1004886 1996-12-23
NL1004886A NL1004886C2 (nl) 1996-12-23 1996-12-23 Halfgeleiderinrichtingen en werkwijze voor het maken daarvan.

Publications (1)

Publication Number Publication Date
NL1004886C2 true NL1004886C2 (nl) 1998-06-24

Family

ID=19764131

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1004886A NL1004886C2 (nl) 1996-12-23 1996-12-23 Halfgeleiderinrichtingen en werkwijze voor het maken daarvan.

Country Status (7)

Country Link
US (3) US6686230B2 (ko)
EP (1) EP0946783B1 (ko)
JP (1) JP2001506809A (ko)
KR (1) KR100537478B1 (ko)
AU (1) AU5859198A (ko)
NL (1) NL1004886C2 (ko)
WO (1) WO1998028463A1 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1574597B1 (en) * 2004-03-12 2012-01-11 Universiteit Utrecht Holding B.V. Process for producing thin films and devices
US20100183818A1 (en) * 2006-09-06 2010-07-22 Seoul National University Industry Foundation Apparatus and method of depositing films using bias and charging behavior of nanoparticles formed during chemical vapor deposition
FR2923221B1 (fr) * 2007-11-07 2012-06-01 Air Liquide Procede de depot par cvd ou pvd de composes de bore
US8758633B1 (en) 2009-07-28 2014-06-24 Clemson University Dielectric spectrometers with planar nanofluidic channels
US8580661B1 (en) * 2011-08-24 2013-11-12 U.S. Department Of Energy Method for the hydrogenation of poly-si
TWI506171B (zh) * 2012-06-08 2015-11-01 Wintek Corp 形成多晶矽薄膜之方法
EP2671965A3 (en) * 2012-06-08 2014-03-12 Wintek Corporation Method of forming thin film polysilicon layer and method of forming thin film transistor
CN103489762A (zh) * 2012-06-08 2014-01-01 胜华科技股份有限公司 形成多晶硅薄膜的方法
DE102013112855A1 (de) * 2013-11-21 2015-05-21 Aixtron Se Vorrichtung und Verfahren zum Fertigen von aus Kohlenstoff bestehenden Nanostrukturen

Citations (5)

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Publication number Priority date Publication date Assignee Title
US4237151A (en) * 1979-06-26 1980-12-02 The United States Of America As Represented By The United States Department Of Energy Thermal decomposition of silane to form hydrogenated amorphous Si film
US4747077A (en) * 1983-12-10 1988-05-24 The British Petroleum Company P.L.C. Method of detecting the conductance state of a non-volatile memory device
JPH01162769A (ja) * 1987-12-18 1989-06-27 Fujitsu Ltd アモルファスシリコンの形成方法
US5281546A (en) * 1992-09-02 1994-01-25 General Electric Company Method of fabricating a thin film transistor using hydrogen plasma treatment of the intrinsic silicon/doped layer interface
EP0687735A1 (de) * 1994-06-15 1995-12-20 SKW Trostberg Aktiengesellschaft Verfahren zur enzymatischen Umesterung

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US4485128A (en) * 1981-11-20 1984-11-27 Chronar Corporation Bandgap control in amorphous semiconductors
US4465706A (en) * 1981-11-20 1984-08-14 Chronar Corporation Bandgap control in amorphous semiconductors
US4589006A (en) * 1982-08-23 1986-05-13 The United States Of America As Represented By The United States Department Of Energy Germanium detector passivated with hydrogenated amorphous germanium
US4634605A (en) * 1984-05-23 1987-01-06 Wiesmann Harold J Method for the indirect deposition of amorphous silicon and polycrystalline silicone and alloys thereof
US5776819A (en) * 1992-05-05 1998-07-07 Midwest Research Institute Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas
US5397737A (en) * 1992-05-05 1995-03-14 The United States Of America As Represented By The United States Department Of Energy Deposition of device quality low H content, amorphous silicon films
EP0923138B1 (en) * 1993-07-26 2002-10-30 Seiko Epson Corporation Thin -film semiconductor device, its manufacture and display sytem
DE4333416C2 (de) * 1993-09-30 1996-05-09 Reinhard Dr Schwarz Verfahren zur Herstellung von mikrokristallinen Schichten und deren Verwendung
JP3498363B2 (ja) * 1994-06-13 2004-02-16 住友電気工業株式会社 ダイヤモンドの合成方法
KR0144823B1 (ko) * 1994-11-23 1998-10-01 양승택 효율을 극대화한 노즐을 이용한 수소원자의 표면 흡착장치
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WO1997022141A1 (fr) * 1995-12-14 1997-06-19 Seiko Epson Corporation Procede de fabrication d'un film semi-conducteur mince et dispositif obtenu par ce procede

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4237151A (en) * 1979-06-26 1980-12-02 The United States Of America As Represented By The United States Department Of Energy Thermal decomposition of silane to form hydrogenated amorphous Si film
US4747077A (en) * 1983-12-10 1988-05-24 The British Petroleum Company P.L.C. Method of detecting the conductance state of a non-volatile memory device
JPH01162769A (ja) * 1987-12-18 1989-06-27 Fujitsu Ltd アモルファスシリコンの形成方法
US5281546A (en) * 1992-09-02 1994-01-25 General Electric Company Method of fabricating a thin film transistor using hydrogen plasma treatment of the intrinsic silicon/doped layer interface
EP0687735A1 (de) * 1994-06-15 1995-12-20 SKW Trostberg Aktiengesellschaft Verfahren zur enzymatischen Umesterung

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
DOYLE R ET AL: "Production of high-quality amorphous silicon films by evaporative silane surface decomposition", JOURNAL OF APPLIED PHYSICS, 15 SEPT. 1988, USA, vol. 64, no. 6, ISSN 0021-8979, pages 3215 - 3223, XP000097188 *
MEILING H ET AL: "Stability of hot-wire deposited amorphous-silicon thin-film transistors", APPLIED PHYSICS LETTERS, 19 AUG. 1996, AIP, USA, vol. 69, no. 8, ISSN 0003-6951, pages 1062 - 1064, XP000626137 *
PATENT ABSTRACTS OF JAPAN vol. 013, no. 423 (C - 638) 20 September 1989 (1989-09-20) *

Also Published As

Publication number Publication date
US20010052596A1 (en) 2001-12-20
US6750474B1 (en) 2004-06-15
US6686230B2 (en) 2004-02-03
KR20000069692A (ko) 2000-11-25
EP0946783B1 (en) 2004-06-16
KR100537478B1 (ko) 2005-12-19
WO1998028463A1 (en) 1998-07-02
US20020132411A1 (en) 2002-09-19
JP2001506809A (ja) 2001-05-22
EP0946783A1 (en) 1999-10-06
AU5859198A (en) 1998-07-17

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