MY194185A - Method of manufacturing plating films - Google Patents
Method of manufacturing plating filmsInfo
- Publication number
- MY194185A MY194185A MYPI2014001378A MYPI2014001378A MY194185A MY 194185 A MY194185 A MY 194185A MY PI2014001378 A MYPI2014001378 A MY PI2014001378A MY PI2014001378 A MYPI2014001378 A MY PI2014001378A MY 194185 A MY194185 A MY 194185A
- Authority
- MY
- Malaysia
- Prior art keywords
- main surface
- power source
- workpiece
- current power
- direct current
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/007—Current directing devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
- C25D5/611—Smooth layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/627—Electroplating characterised by the visual appearance of the layers, e.g. colour, brightness or mat appearance
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating Methods And Accessories (AREA)
- Lead Frames For Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013102470A JP6093646B2 (ja) | 2013-05-14 | 2013-05-14 | めっき膜の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
MY194185A true MY194185A (en) | 2022-11-17 |
Family
ID=51878578
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI2014001378A MY194185A (en) | 2013-05-14 | 2014-05-12 | Method of manufacturing plating films |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6093646B2 (ru) |
KR (1) | KR102102263B1 (ru) |
CN (1) | CN104152959B (ru) |
MY (1) | MY194185A (ru) |
TW (1) | TWI627315B (ru) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6685112B2 (ja) * | 2015-11-18 | 2020-04-22 | 株式会社三井ハイテック | リードフレーム及びリードフレームパッケージ、並びにこれらの製造方法 |
JP6905031B2 (ja) * | 2016-02-17 | 2021-07-21 | 株式会社三井ハイテック | リードフレーム及び半導体パッケージ |
JP6621681B2 (ja) * | 2016-02-17 | 2019-12-18 | 株式会社三井ハイテック | リードフレーム及びその製造方法、並びに半導体パッケージ |
JP6782116B2 (ja) * | 2016-08-02 | 2020-11-11 | 古河電気工業株式会社 | 銀被覆材料 |
CN109468670B (zh) * | 2018-11-16 | 2021-03-26 | 中山品高电子材料有限公司 | 引线框架电镀铜层的方法 |
CN112331566B (zh) * | 2020-11-02 | 2024-09-27 | 昆山一鼎工业科技有限公司 | 引线框架表面粗糙度的制造设备及制造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6179988B1 (en) * | 1997-08-29 | 2001-01-30 | Electrocopper Products Limited | Process for making copper wire |
JP3690603B2 (ja) * | 2002-11-28 | 2005-08-31 | 株式会社中央製作所 | 連続式めっきの電流制御方法 |
CN2587889Y (zh) * | 2002-12-11 | 2003-11-26 | 吕明 | 制造高孔隙率金属带材的电沉积设备 |
JP2005097721A (ja) * | 2003-08-27 | 2005-04-14 | Yamaha Corp | 両面メッキ装置および両面メッキ方法 |
CN2712947Y (zh) * | 2004-07-20 | 2005-07-27 | 戴其金 | 一种双阳极电镀槽 |
JP4981488B2 (ja) * | 2007-03-09 | 2012-07-18 | 古河電気工業株式会社 | 粗化圧延銅板およびその製造方法 |
KR20100066988A (ko) * | 2008-12-10 | 2010-06-18 | 삼성테크윈 주식회사 | 전자회로기판의 균일 도금 방법 |
KR100950442B1 (ko) * | 2009-05-13 | 2010-04-02 | 주식회사 모아기술 | 고주파펄스를 이용한 알루미늄소재의 항균성 표면처리방법 |
CN102337578B (zh) * | 2010-07-19 | 2014-04-02 | 北大方正集团有限公司 | 一种双面电镀槽、板件及电镀方法 |
-
2013
- 2013-05-14 JP JP2013102470A patent/JP6093646B2/ja active Active
-
2014
- 2014-05-06 TW TW103116038A patent/TWI627315B/zh active
- 2014-05-09 CN CN201410199014.0A patent/CN104152959B/zh active Active
- 2014-05-12 MY MYPI2014001378A patent/MY194185A/en unknown
- 2014-05-13 KR KR1020140057115A patent/KR102102263B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN104152959B (zh) | 2018-11-13 |
CN104152959A (zh) | 2014-11-19 |
JP2014221941A (ja) | 2014-11-27 |
KR20140135108A (ko) | 2014-11-25 |
TWI627315B (zh) | 2018-06-21 |
JP6093646B2 (ja) | 2017-03-08 |
TW201500599A (zh) | 2015-01-01 |
KR102102263B1 (ko) | 2020-04-20 |
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