TW201613033A - Memory structure and manufacturing method therefor - Google Patents
Memory structure and manufacturing method thereforInfo
- Publication number
- TW201613033A TW201613033A TW103132085A TW103132085A TW201613033A TW 201613033 A TW201613033 A TW 201613033A TW 103132085 A TW103132085 A TW 103132085A TW 103132085 A TW103132085 A TW 103132085A TW 201613033 A TW201613033 A TW 201613033A
- Authority
- TW
- Taiwan
- Prior art keywords
- memory structure
- portions
- manufacturing
- method therefor
- trenched gate
- Prior art date
Links
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
Abstract
A memory structure includes a substrate that has a discontinuous well region, a trenched gate, a first doping region, and a second doping region. The first doping region and a second doping region are respectively disposed at two sides of the trenched gate in the substrate. The discontinuous well region includes at least one first portion and at least two second portions, where the first portion and the second portions are not in contact with one another. The first portion is disposed below the trenched gate, and the two second portions are disposed respectively below the portions of the substrate at two sides of the trenched gate.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103132085A TWI549225B (en) | 2014-09-17 | 2014-09-17 | Memory structure and manufacturing method therefor |
CN201410514448.5A CN105529330B (en) | 2014-09-17 | 2014-09-29 | memory structure and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103132085A TWI549225B (en) | 2014-09-17 | 2014-09-17 | Memory structure and manufacturing method therefor |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201613033A true TW201613033A (en) | 2016-04-01 |
TWI549225B TWI549225B (en) | 2016-09-11 |
Family
ID=55771451
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103132085A TWI549225B (en) | 2014-09-17 | 2014-09-17 | Memory structure and manufacturing method therefor |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN105529330B (en) |
TW (1) | TWI549225B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108346665B (en) * | 2017-01-23 | 2021-03-09 | 联华电子股份有限公司 | Semiconductor element and manufacturing method thereof |
CN109037225B (en) * | 2018-09-19 | 2023-09-12 | 长江存储科技有限责任公司 | memory structure |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100382236C (en) * | 2005-04-18 | 2008-04-16 | 力晶半导体股份有限公司 | Production of semiconductor for preventing from being brokendown |
KR101934037B1 (en) * | 2012-11-21 | 2018-12-31 | 삼성전자주식회사 | Semiconductor device having supporter and method of forming the same |
-
2014
- 2014-09-17 TW TW103132085A patent/TWI549225B/en active
- 2014-09-29 CN CN201410514448.5A patent/CN105529330B/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI549225B (en) | 2016-09-11 |
CN105529330B (en) | 2019-01-01 |
CN105529330A (en) | 2016-04-27 |
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