MY185389A - Sputtering target containing co or fe - Google Patents

Sputtering target containing co or fe

Info

Publication number
MY185389A
MY185389A MYPI2018703713A MYPI2018703713A MY185389A MY 185389 A MY185389 A MY 185389A MY PI2018703713 A MYPI2018703713 A MY PI2018703713A MY PI2018703713 A MYPI2018703713 A MY PI2018703713A MY 185389 A MY185389 A MY 185389A
Authority
MY
Malaysia
Prior art keywords
nonmagnetic material
grain
metal
grains
distances
Prior art date
Application number
MYPI2018703713A
Other languages
English (en)
Inventor
Atsutoshi Arakawa
Hideo Takami
Yuichiro Nakamura
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of MY185389A publication Critical patent/MY185389A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/07—Alloys based on nickel or cobalt based on cobalt
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/001—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
    • C22C32/0015—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
    • C22C32/0026—Matrix based on Ni, Co, Cr or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C33/00—Making ferrous alloys
    • C22C33/02—Making ferrous alloys by powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/002—Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Powder Metallurgy (AREA)
  • Thin Magnetic Films (AREA)
MYPI2018703713A 2013-02-15 2014-01-24 Sputtering target containing co or fe MY185389A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013028388 2013-02-15

Publications (1)

Publication Number Publication Date
MY185389A true MY185389A (en) 2021-05-17

Family

ID=51353907

Family Applications (2)

Application Number Title Priority Date Filing Date
MYPI2018703713A MY185389A (en) 2013-02-15 2014-01-24 Sputtering target containing co or fe
MYPI2015702204A MY178171A (en) 2013-02-15 2014-01-24 Sputtering target containing co or fe

Family Applications After (1)

Application Number Title Priority Date Filing Date
MYPI2015702204A MY178171A (en) 2013-02-15 2014-01-24 Sputtering target containing co or fe

Country Status (6)

Country Link
JP (2) JP6332869B2 (fr)
CN (1) CN104903488B (fr)
MY (2) MY185389A (fr)
SG (1) SG11201503676WA (fr)
TW (1) TWI608114B (fr)
WO (1) WO2014125897A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105056926A (zh) * 2015-07-24 2015-11-18 武汉纺织大学 一种新型TiO2/WO3包覆的磁性纳米复合粒子及其制备方法和用途
JP6660130B2 (ja) * 2015-09-18 2020-03-04 山陽特殊製鋼株式会社 ＣｏＦｅＢ系合金ターゲット材
MY189794A (en) * 2016-03-31 2022-03-08 Jx Nippon Mining & Metals Corp Ferromagnetic material sputtering target
TWI702294B (zh) * 2018-07-31 2020-08-21 日商田中貴金屬工業股份有限公司 磁氣記錄媒體用濺鍍靶
US20220383901A1 (en) * 2019-11-01 2022-12-01 Tanaka Kikinzoku Kogyo K.K. Sputtering target for heat-assisted magnetic recording medium
JP7317741B2 (ja) * 2020-02-07 2023-07-31 Ｊｘ金属株式会社 スパッタリングターゲット、磁性膜、及びスパッタリングターゲット作製用の原料混合粉末
JP2024010347A (ja) * 2022-07-12 2024-01-24 田中貴金属工業株式会社 Ｃｏ－Ｃｒ－Ｐｔ－酸化物系スパッタリングターゲット

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000234168A (ja) * 1998-12-07 2000-08-29 Japan Energy Corp 光ディスク保護膜形成用スパッタリングターゲット
JP2009001860A (ja) * 2007-06-21 2009-01-08 Mitsubishi Materials Corp 比透磁率の低い垂直磁気記録媒体膜形成用スパッタリングターゲット
JP5204460B2 (ja) * 2007-10-24 2013-06-05 三井金属鉱業株式会社 磁気記録膜用スパッタリングターゲットおよびその製造方法
CN102333905B (zh) * 2009-03-27 2013-09-04 吉坤日矿日石金属株式会社 非磁性材料粒子分散型强磁性材料溅射靶
MY149640A (en) * 2009-12-11 2013-09-13 Jx Nippon Mining & Metals Corp Sputtering target comprising oxide phase dispersed in co or co alloy phase, magnetic thin film made of co or co alloy phase and oxide phase, and magnetic recording medium using the said thin film
CN103003468B (zh) * 2010-07-20 2015-03-11 吉坤日矿日石金属株式会社 粉粒产生少的强磁性材料溅射靶
CN103081009B (zh) * 2010-08-31 2016-05-18 吉坤日矿日石金属株式会社 Fe-Pt型强磁性材料溅射靶
JP5888664B2 (ja) * 2010-12-20 2016-03-22 Ｊｘ金属株式会社 強磁性材スパッタリングターゲット
MY161232A (en) * 2010-12-20 2017-04-14 Jx Nippon Mining & Metals Corp Fe-pt-based ferromagnetic sputtering target and method for producing same
SG189256A1 (en) * 2010-12-22 2013-05-31 Jx Nippon Mining & Metals Corp Sintered compact sputtering target

Also Published As

Publication number Publication date
TWI608114B (zh) 2017-12-11
TW201443262A (zh) 2014-11-16
CN104903488A (zh) 2015-09-09
JP6359622B2 (ja) 2018-07-18
MY178171A (en) 2020-10-06
CN104903488B (zh) 2018-02-16
WO2014125897A1 (fr) 2014-08-21
JP6332869B2 (ja) 2018-05-30
JPWO2014125897A1 (ja) 2017-02-02
SG11201503676WA (en) 2015-06-29
JP2017137570A (ja) 2017-08-10

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