MY182430A - Method and device for producing a photovoltaic element with stabilized efficiency - Google Patents

Method and device for producing a photovoltaic element with stabilized efficiency

Info

Publication number
MY182430A
MY182430A MYPI2015704636A MYPI2015704636A MY182430A MY 182430 A MY182430 A MY 182430A MY PI2015704636 A MYPI2015704636 A MY PI2015704636A MY PI2015704636 A MYPI2015704636 A MY PI2015704636A MY 182430 A MY182430 A MY 182430A
Authority
MY
Malaysia
Prior art keywords
silicon substrate
zone
photovoltaic element
hydrogen
purposively
Prior art date
Application number
MYPI2015704636A
Other languages
English (en)
Inventor
Axel Herguth
Svenja Wilking
Original Assignee
Univ Konstanz
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=49274634&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=MY182430(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Univ Konstanz filed Critical Univ Konstanz
Publication of MY182430A publication Critical patent/MY182430A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/06—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated
    • F27B9/062—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated electrically heated
    • F27B9/066—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated electrically heated heated by lamps
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/30—Details, accessories or equipment specially adapted for furnaces of these types
    • F27B9/40—Arrangements of controlling or monitoring devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Toxicology (AREA)
  • Combustion & Propulsion (AREA)
  • Health & Medical Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
MYPI2015704636A 2013-06-26 2013-09-26 Method and device for producing a photovoltaic element with stabilized efficiency MY182430A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102013010575 2013-06-26
PCT/EP2013/070104 WO2014206504A1 (de) 2013-06-26 2013-09-26 Verfahren und vorrichtung zum herstellen eines photovoltaikelements mit stabilisiertem wirkungsgrad

Publications (1)

Publication Number Publication Date
MY182430A true MY182430A (en) 2021-01-25

Family

ID=49274634

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2015704636A MY182430A (en) 2013-06-26 2013-09-26 Method and device for producing a photovoltaic element with stabilized efficiency

Country Status (10)

Country Link
US (2) US10892376B2 (enExample)
EP (1) EP3014663B1 (enExample)
JP (1) JP6266768B2 (enExample)
KR (1) KR101807381B1 (enExample)
CN (1) CN105340085B (enExample)
DE (2) DE202013012849U1 (enExample)
ES (1) ES2830766T3 (enExample)
MY (1) MY182430A (enExample)
SG (1) SG11201510423YA (enExample)
WO (1) WO2014206504A1 (enExample)

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DE102013113108B4 (de) 2013-11-27 2024-08-29 Hanwha Q Cells Gmbh Solarzellenherstellungsverfahren
DE102013113123B4 (de) 2013-11-27 2021-11-18 Hanwha Q Cells Gmbh Solarzellenherstellungsverfahren
US20160005915A1 (en) * 2014-07-03 2016-01-07 Sino-American Silicon Products Inc. Method and apparatus for inhibiting light-induced degradation of photovoltaic device
CN107078173B (zh) * 2014-10-27 2020-06-09 松下知识产权经营株式会社 太阳能电池组件的制造方法和太阳能电池组件的制造装置
US10505069B2 (en) 2015-03-13 2019-12-10 Newsouth Innovations Pty Limited Method for processing silicon material
US10443941B2 (en) * 2015-05-20 2019-10-15 Illinois Tool Works Inc. Light annealing in a cooling chamber of a firing furnace
DE102015114240A1 (de) * 2015-08-27 2017-03-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Bearbeitung eines Halbleitersubstrats mittels Laserstrahlung
DE102015114298A1 (de) 2015-08-27 2017-03-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Stabilisieren einer photovoltaischen Silizium-Solarzelle
DE102015219087A1 (de) * 2015-10-02 2017-04-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Stabilisierung der Konversionseffizienz von Siliziumsolarzellen
CN108604619A (zh) * 2016-02-22 2018-09-28 应用材料意大利有限公司 用于处理太阳能电池基板的设备、用于处理太阳能电池基板的系统和用于处理太阳能电池基板的方法
FR3051074B1 (fr) * 2016-05-03 2018-05-18 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d'une cellule photovoltaique a heterojonction
AU2017276802A1 (en) * 2016-06-06 2018-11-29 Newsouth Innovations Pty Limited A method for processing silicon material
KR20190046785A (ko) 2016-07-12 2019-05-07 뉴사우쓰 이노베이션스 피티와이 리미티드 광전 디바이스의 제조방법
JP6655791B2 (ja) * 2016-08-25 2020-02-26 パナソニックＩｐマネジメント株式会社 太陽電池セル及びその製造方法
TWI585988B (zh) * 2016-10-21 2017-06-01 茂迪股份有限公司 太陽能電池
SG11201903426YA (en) * 2016-11-22 2019-05-30 Newsouth Innovations Pty Ltd A method for improving wafer performance for photovoltaic devices
KR101912772B1 (ko) * 2016-12-26 2019-01-14 주식회사 한화 광기전력 소자 제조 장치 및 제조 방법
US20220262973A1 (en) * 2018-07-30 2022-08-18 mPower Technology, Inc. In-situ rapid annealing and operation of solar cells for extreme environment applications
DE102019102227A1 (de) 2019-01-29 2019-11-14 Universität Konstanz Vorrichtung zum Messen einer Strahlungsintensität insbesondere in einem Durchlaufofen
CN112768372A (zh) * 2019-11-05 2021-05-07 伊利诺斯工具制品有限公司 烧结设备
DE102020002335B4 (de) 2020-04-17 2022-02-24 Ce Cell Engineering Gmbh Verfahren zur Verbesserung des ohmschen Kontaktverhaltens zwischen einem Kontaktgitter und einer Emitterschicht einer Silizumsolarzelle
CN112599609B (zh) * 2020-12-15 2022-07-08 山东力诺阳光电力科技有限公司 一种高效晶体硅太阳能电池及其制备方法
GB202216076D0 (en) * 2022-10-31 2022-12-14 Extraterrestrial Power Pty Ltd Solar cell

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Also Published As

Publication number Publication date
ES2830766T3 (es) 2021-06-04
CN105340085B (zh) 2018-07-06
KR20160023687A (ko) 2016-03-03
EP3014663B1 (de) 2020-09-02
JP6266768B2 (ja) 2018-01-24
SG11201510423YA (en) 2016-01-28
DE112013005591B4 (de) 2016-08-04
JP2016525276A (ja) 2016-08-22
US20160141445A1 (en) 2016-05-19
US11784279B2 (en) 2023-10-10
CN105340085A (zh) 2016-02-17
DE112013005591C5 (de) 2018-10-04
DE112013005591A5 (de) 2015-10-22
EP3014663A1 (de) 2016-05-04
KR101807381B1 (ko) 2018-01-10
US20210057600A1 (en) 2021-02-25
WO2014206504A1 (de) 2014-12-31
US10892376B2 (en) 2021-01-12
DE202013012849U1 (de) 2020-07-03

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