CN105340085B - 用于生产具有稳定效率的光伏元件的方法和设备 - Google Patents

用于生产具有稳定效率的光伏元件的方法和设备 Download PDF

Info

Publication number
CN105340085B
CN105340085B CN201380077813.4A CN201380077813A CN105340085B CN 105340085 B CN105340085 B CN 105340085B CN 201380077813 A CN201380077813 A CN 201380077813A CN 105340085 B CN105340085 B CN 105340085B
Authority
CN
China
Prior art keywords
silicon substrate
temperature
hydrogen
silicon
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201380077813.4A
Other languages
English (en)
Chinese (zh)
Other versions
CN105340085A (zh
Inventor
阿克塞尔·埃尔古特
斯文嘉·威尔金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Konstanz
Original Assignee
University of Konstanz
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=49274634&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN105340085(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by University of Konstanz filed Critical University of Konstanz
Publication of CN105340085A publication Critical patent/CN105340085A/zh
Application granted granted Critical
Publication of CN105340085B publication Critical patent/CN105340085B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/06—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated
    • F27B9/062—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated electrically heated
    • F27B9/066—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated electrically heated heated by lamps
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/30—Details, accessories or equipment specially adapted for furnaces of these types
    • F27B9/40—Arrangements of controlling or monitoring devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3314—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Manufacturing & Machinery (AREA)
CN201380077813.4A 2013-06-26 2013-09-26 用于生产具有稳定效率的光伏元件的方法和设备 Active CN105340085B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102013010575 2013-06-26
DE102013010575.7 2013-06-26
PCT/EP2013/070104 WO2014206504A1 (de) 2013-06-26 2013-09-26 Verfahren und vorrichtung zum herstellen eines photovoltaikelements mit stabilisiertem wirkungsgrad

Publications (2)

Publication Number Publication Date
CN105340085A CN105340085A (zh) 2016-02-17
CN105340085B true CN105340085B (zh) 2018-07-06

Family

ID=49274634

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380077813.4A Active CN105340085B (zh) 2013-06-26 2013-09-26 用于生产具有稳定效率的光伏元件的方法和设备

Country Status (10)

Country Link
US (2) US10892376B2 (enExample)
EP (1) EP3014663B1 (enExample)
JP (1) JP6266768B2 (enExample)
KR (1) KR101807381B1 (enExample)
CN (1) CN105340085B (enExample)
DE (2) DE112013005591C5 (enExample)
ES (1) ES2830766T3 (enExample)
MY (1) MY182430A (enExample)
SG (1) SG11201510423YA (enExample)
WO (1) WO2014206504A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013113123B4 (de) 2013-11-27 2021-11-18 Hanwha Q Cells Gmbh Solarzellenherstellungsverfahren
DE102013113108B4 (de) 2013-11-27 2024-08-29 Hanwha Q Cells Gmbh Solarzellenherstellungsverfahren
US20160005915A1 (en) * 2014-07-03 2016-01-07 Sino-American Silicon Products Inc. Method and apparatus for inhibiting light-induced degradation of photovoltaic device
WO2016067516A1 (ja) * 2014-10-27 2016-05-06 パナソニックＩｐマネジメント株式会社 太陽電池モジュールの製造方法、及び太陽電池モジュールの製造装置
CN107408497B (zh) * 2015-03-13 2021-05-18 新南创新私人有限公司 加速掺杂硅中缺陷形成、稳定电池性能、制造电池的方法和电池
US10443941B2 (en) * 2015-05-20 2019-10-15 Illinois Tool Works Inc. Light annealing in a cooling chamber of a firing furnace
DE102015114298A1 (de) 2015-08-27 2017-03-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Stabilisieren einer photovoltaischen Silizium-Solarzelle
DE102015114240B4 (de) * 2015-08-27 2026-02-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Bearbeitung eines Halbleitersubstrats mittels Laserstrahlung
DE102015219087A1 (de) * 2015-10-02 2017-04-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Stabilisierung der Konversionseffizienz von Siliziumsolarzellen
CN108604619A (zh) * 2016-02-22 2018-09-28 应用材料意大利有限公司 用于处理太阳能电池基板的设备、用于处理太阳能电池基板的系统和用于处理太阳能电池基板的方法
FR3051074B1 (fr) * 2016-05-03 2018-05-18 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d'une cellule photovoltaique a heterojonction
TW201818560A (zh) * 2016-06-06 2018-05-16 新南革新股份有限公司 矽材料之加工方法
EP3485518A4 (en) * 2016-07-12 2019-11-06 Newsouth Innovations Pty Limited METHOD FOR PRODUCING A PHOTOVOLTAIC DEVICE
JP6655791B2 (ja) * 2016-08-25 2020-02-26 パナソニックＩｐマネジメント株式会社 太陽電池セル及びその製造方法
TWI585988B (zh) * 2016-10-21 2017-06-01 茂迪股份有限公司 太陽能電池
KR102750219B1 (ko) * 2016-11-22 2025-01-07 뉴사우스 이노베이션즈 피티와이 리미티드 Pv 장치 내 수소 유도 재결합(hir) 및 표면 패시베이션(passivation) 열화를 완화시키는 개선된 수소 패시베이션
KR101912772B1 (ko) * 2016-12-26 2019-01-14 주식회사 한화 광기전력 소자 제조 장치 및 제조 방법
US20220262973A1 (en) * 2018-07-30 2022-08-18 mPower Technology, Inc. In-situ rapid annealing and operation of solar cells for extreme environment applications
DE102019102227A1 (de) 2019-01-29 2019-11-14 Universität Konstanz Vorrichtung zum Messen einer Strahlungsintensität insbesondere in einem Durchlaufofen
CN112768372B (zh) * 2019-11-05 2026-05-19 伊利诺斯工具制品有限公司 烧结设备
DE102020002335B4 (de) 2020-04-17 2022-02-24 Ce Cell Engineering Gmbh Verfahren zur Verbesserung des ohmschen Kontaktverhaltens zwischen einem Kontaktgitter und einer Emitterschicht einer Silizumsolarzelle
CN112599609B (zh) * 2020-12-15 2022-07-08 山东力诺阳光电力科技有限公司 一种高效晶体硅太阳能电池及其制备方法
GB202216076D0 (en) * 2022-10-31 2022-12-14 Extraterrestrial Power Pty Ltd Solar cell
FR3170806A1 (fr) * 2024-12-19 2026-06-26 Commissariat A L' Energie Atomique Et Aux Energies Alternatives Cellule solaire en si cristallin plus resistante aux irradiations

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130102129A1 (en) * 2011-06-03 2013-04-25 Memc Singapore Pte. Ltd. (Uen200614794D) Processes for suppressing minority carrier lifetime degradation in silicon wafers

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2949607A (en) * 1958-09-05 1960-08-16 Carl W Lamb Multiple-band gamma matched antenna
DE3536299A1 (de) 1985-10-11 1987-04-16 Nukem Gmbh Solarzelle aus silizium
JP4405161B2 (ja) 2003-02-04 2010-01-27 シャープ株式会社 多結晶シリコン基板の処理方法、その方法により処理された多結晶シリコン基板および太陽電池
JP2006073715A (ja) 2004-09-01 2006-03-16 Sharp Corp 太陽電池
DE102006012920B3 (de) * 2006-03-21 2008-01-24 Universität Konstanz Verfahren zum Herstellen eines Photovoltaikelements mit stabilisiertem Wirkungsgrad
CN101478882B (zh) 2006-06-26 2013-07-10 Tp太阳能公司 具有高强度加热区段的快速热烧结红外线传送带式热处理炉
US7805064B2 (en) * 2006-06-26 2010-09-28 TP Solar, Inc. (Corporation of CA, USA) Rapid thermal firing IR conveyor furnace having high intensity heating section
US7993700B2 (en) 2007-03-01 2011-08-09 Applied Materials, Inc. Silicon nitride passivation for a solar cell
JP5127273B2 (ja) 2007-03-27 2013-01-23 京セラ株式会社 太陽電池素子の製造方法
WO2009052141A1 (en) * 2007-10-18 2009-04-23 E. I. Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices
FR2929755B1 (fr) * 2008-04-03 2011-04-22 Commissariat Energie Atomique Procede de traitement d'un substrat semi-conducteur par activation thermique d'elements legers
JP5058184B2 (ja) 2009-01-23 2012-10-24 三菱電機株式会社 光起電力装置の製造方法
US8828776B2 (en) * 2009-04-16 2014-09-09 Tp Solar, Inc. Diffusion furnaces employing ultra low mass transport systems and methods of wafer rapid diffusion processing
CN102356458B (zh) 2009-04-16 2014-10-15 Tp太阳能公司 利用极低质量运送系统的扩散炉及晶圆快速扩散加工处理的方法
FR2949607B1 (fr) 2009-09-03 2011-10-21 Commissariat Energie Atomique Procede de traitement de cellules photovoltaiques contre la diminution du rendement lors de l'eclairement
CN104952975A (zh) * 2009-10-26 2015-09-30 新南创新私人有限公司 用于硅太阳能电池的改善的金属化方法
FR2966980B1 (fr) 2010-11-02 2013-07-12 Commissariat Energie Atomique Procédé de fabrication de cellules solaires, atténuant les phénomènes de lid
US20120060758A1 (en) * 2011-03-24 2012-03-15 Primestar Solar, Inc. Dynamic system for variable heating or cooling of linearly conveyed substrates
FR2977079B1 (fr) 2011-06-27 2013-07-26 Commissariat Energie Atomique Procede de traitement de cellules photovoltaiques a heterojonction pour ameliorer et stabiliser leur rendement
SG11201407270XA (en) * 2012-05-21 2014-12-30 Newsouth Innovations Pty Ltd Advanced hydrogenation of silicon solar cells
US9780252B2 (en) * 2014-10-17 2017-10-03 Tp Solar, Inc. Method and apparatus for reduction of solar cell LID
US11538956B2 (en) * 2018-04-27 2022-12-27 Illinois Tool Works Inc. Methods and apparatus to control zone temperatures of a solar cell production system

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130102129A1 (en) * 2011-06-03 2013-04-25 Memc Singapore Pte. Ltd. (Uen200614794D) Processes for suppressing minority carrier lifetime degradation in silicon wafers

Also Published As

Publication number Publication date
DE112013005591C5 (de) 2018-10-04
US20210057600A1 (en) 2021-02-25
DE112013005591B4 (de) 2016-08-04
WO2014206504A1 (de) 2014-12-31
DE202013012849U1 (de) 2020-08-13
US20160141445A1 (en) 2016-05-19
JP2016525276A (ja) 2016-08-22
US11784279B2 (en) 2023-10-10
EP3014663A1 (de) 2016-05-04
KR101807381B1 (ko) 2018-01-10
CN105340085A (zh) 2016-02-17
SG11201510423YA (en) 2016-01-28
ES2830766T3 (es) 2021-06-04
DE112013005591A5 (de) 2015-10-22
US10892376B2 (en) 2021-01-12
JP6266768B2 (ja) 2018-01-24
EP3014663B1 (de) 2020-09-02
MY182430A (en) 2021-01-25
KR20160023687A (ko) 2016-03-03

Similar Documents

Publication Publication Date Title
US11784279B2 (en) Method and device for producing a photovoltaic element with stabilised efficiency
KR102519569B1 (ko) 광 전지 장치들을 위한 웨이퍼 성능을 개선하는 방법
KR102102873B1 (ko) 실리콘 태양 전지의 개선된 수소화 공정
US8921968B2 (en) Selective emitter solar cells formed by a hybrid diffusion and ion implantation process
US7670966B2 (en) Method of processing a semiconductor substrate by thermal activation of light elements
US20120260989A1 (en) Thermal treatment of silicon wafers useful for photovoltaic applications
WO2007107351A1 (en) Method for fabricating a photovoltaic element with stabilised efficiency
JP2014526135A (ja) シリコンウェハにおいて少数キャリア寿命劣化を抑制する方法
JP2014526135A5 (enExample)
ES2618033T3 (es) Procedimiento para la purificación de un sustrato de silicio cristalino y procedimiento para la fabricación de una célula fotovoltaica
EP3346505B1 (en) Method for manufacturing high-photoelectric-conversion-efficiency solar cell
JP2025506784A (ja) 浅い接合拡散エミッタの結晶シリコン太陽電池の製造方法及びその使用
US8895416B2 (en) Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material
Hieslmair et al. Ion implantation for silicon solar cells
JP2019161057A (ja) 太陽電池の製造方法
Stefani Understanding light-induced degradation in p-type silicon heterojunction solar cells
Vicari Stefani Understanding light-induced degradation in p-type silicon heterojunction solar cells
Tsuo et al. High-flux solar furnace processing of crystalline silicon solar cells
JP2017045887A (ja) ｎ型拡散層形成組成物、半導体基板及びその製造方法、並びに太陽電池素子及びその製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant