CN105340085B - 用于生产具有稳定效率的光伏元件的方法和设备 - Google Patents
用于生产具有稳定效率的光伏元件的方法和设备 Download PDFInfo
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- CN105340085B CN105340085B CN201380077813.4A CN201380077813A CN105340085B CN 105340085 B CN105340085 B CN 105340085B CN 201380077813 A CN201380077813 A CN 201380077813A CN 105340085 B CN105340085 B CN 105340085B
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- silicon substrate
- temperature
- hydrogen
- silicon
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- 238000000034 method Methods 0.000 title claims abstract description 116
- 230000006641 stabilisation Effects 0.000 title claims abstract description 27
- 238000011105 stabilization Methods 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 195
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 172
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 172
- 239000010703 silicon Substances 0.000 claims abstract description 172
- 239000001257 hydrogen Substances 0.000 claims abstract description 156
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 156
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 140
- 230000008569 process Effects 0.000 claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 claims abstract description 34
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical class N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000001816 cooling Methods 0.000 claims description 43
- 238000010438 heat treatment Methods 0.000 claims description 13
- NFGXHKASABOEEW-UHFFFAOYSA-N 1-methylethyl 11-methoxy-3,7,11-trimethyl-2,4-dodecadienoate Chemical compound COC(C)(C)CCCC(C)CC=CC(C)=CC(=O)OC(C)C NFGXHKASABOEEW-UHFFFAOYSA-N 0.000 claims 2
- 238000011069 regeneration method Methods 0.000 abstract description 59
- 230000008929 regeneration Effects 0.000 abstract description 58
- 239000000969 carrier Substances 0.000 abstract description 33
- 150000002431 hydrogen Chemical class 0.000 abstract description 16
- 230000007547 defect Effects 0.000 description 35
- 239000013078 crystal Substances 0.000 description 25
- 239000000463 material Substances 0.000 description 25
- 239000001301 oxygen Substances 0.000 description 21
- 229910052760 oxygen Inorganic materials 0.000 description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 20
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 19
- 229910052796 boron Inorganic materials 0.000 description 19
- 230000000694 effects Effects 0.000 description 19
- 238000009792 diffusion process Methods 0.000 description 16
- 235000012431 wafers Nutrition 0.000 description 15
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 12
- 238000006731 degradation reaction Methods 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 9
- 230000006798 recombination Effects 0.000 description 9
- 238000005215 recombination Methods 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 239000006096 absorbing agent Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000000155 melt Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000001172 regenerating effect Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 150000003376 silicon Chemical class 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000002203 pretreatment Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical class [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical class [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- 229910004012 SiCx Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000009881 electrostatic interaction Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000001782 photodegradation Methods 0.000 description 1
- 230000007420 reactivation Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 230000035899 viability Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/128—Annealing
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
- F27B9/06—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated
- F27B9/062—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated electrically heated
- F27B9/066—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated electrically heated heated by lamps
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
- F27B9/30—Details, accessories or equipment specially adapted for furnaces of these types
- F27B9/40—Arrangements of controlling or monitoring devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/129—Passivating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Toxicology (AREA)
- Combustion & Propulsion (AREA)
- Health & Medical Sciences (AREA)
- Photovoltaic Devices (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102013010575.7 | 2013-06-26 | ||
| DE102013010575 | 2013-06-26 | ||
| PCT/EP2013/070104 WO2014206504A1 (de) | 2013-06-26 | 2013-09-26 | Verfahren und vorrichtung zum herstellen eines photovoltaikelements mit stabilisiertem wirkungsgrad |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105340085A CN105340085A (zh) | 2016-02-17 |
| CN105340085B true CN105340085B (zh) | 2018-07-06 |
Family
ID=49274634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380077813.4A Active CN105340085B (zh) | 2013-06-26 | 2013-09-26 | 用于生产具有稳定效率的光伏元件的方法和设备 |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US10892376B2 (enExample) |
| EP (1) | EP3014663B1 (enExample) |
| JP (1) | JP6266768B2 (enExample) |
| KR (1) | KR101807381B1 (enExample) |
| CN (1) | CN105340085B (enExample) |
| DE (2) | DE202013012849U1 (enExample) |
| ES (1) | ES2830766T3 (enExample) |
| MY (1) | MY182430A (enExample) |
| SG (1) | SG11201510423YA (enExample) |
| WO (1) | WO2014206504A1 (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102013113108B4 (de) | 2013-11-27 | 2024-08-29 | Hanwha Q Cells Gmbh | Solarzellenherstellungsverfahren |
| DE102013113123B4 (de) | 2013-11-27 | 2021-11-18 | Hanwha Q Cells Gmbh | Solarzellenherstellungsverfahren |
| US20160005915A1 (en) * | 2014-07-03 | 2016-01-07 | Sino-American Silicon Products Inc. | Method and apparatus for inhibiting light-induced degradation of photovoltaic device |
| CN107078173B (zh) * | 2014-10-27 | 2020-06-09 | 松下知识产权经营株式会社 | 太阳能电池组件的制造方法和太阳能电池组件的制造装置 |
| US10505069B2 (en) | 2015-03-13 | 2019-12-10 | Newsouth Innovations Pty Limited | Method for processing silicon material |
| US10443941B2 (en) * | 2015-05-20 | 2019-10-15 | Illinois Tool Works Inc. | Light annealing in a cooling chamber of a firing furnace |
| DE102015114240A1 (de) * | 2015-08-27 | 2017-03-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung und Verfahren zur Bearbeitung eines Halbleitersubstrats mittels Laserstrahlung |
| DE102015114298A1 (de) | 2015-08-27 | 2017-03-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zum Stabilisieren einer photovoltaischen Silizium-Solarzelle |
| DE102015219087A1 (de) * | 2015-10-02 | 2017-04-06 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Stabilisierung der Konversionseffizienz von Siliziumsolarzellen |
| CN108604619A (zh) * | 2016-02-22 | 2018-09-28 | 应用材料意大利有限公司 | 用于处理太阳能电池基板的设备、用于处理太阳能电池基板的系统和用于处理太阳能电池基板的方法 |
| FR3051074B1 (fr) * | 2016-05-03 | 2018-05-18 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'une cellule photovoltaique a heterojonction |
| AU2017276802A1 (en) * | 2016-06-06 | 2018-11-29 | Newsouth Innovations Pty Limited | A method for processing silicon material |
| KR20190046785A (ko) | 2016-07-12 | 2019-05-07 | 뉴사우쓰 이노베이션스 피티와이 리미티드 | 광전 디바이스의 제조방법 |
| JP6655791B2 (ja) * | 2016-08-25 | 2020-02-26 | パナソニックＩｐマネジメント株式会社 | 太陽電池セル及びその製造方法 |
| TWI585988B (zh) * | 2016-10-21 | 2017-06-01 | 茂迪股份有限公司 | 太陽能電池 |
| SG11201903426YA (en) * | 2016-11-22 | 2019-05-30 | Newsouth Innovations Pty Ltd | A method for improving wafer performance for photovoltaic devices |
| KR101912772B1 (ko) * | 2016-12-26 | 2019-01-14 | 주식회사 한화 | 광기전력 소자 제조 장치 및 제조 방법 |
| US20220262973A1 (en) * | 2018-07-30 | 2022-08-18 | mPower Technology, Inc. | In-situ rapid annealing and operation of solar cells for extreme environment applications |
| DE102019102227A1 (de) | 2019-01-29 | 2019-11-14 | Universität Konstanz | Vorrichtung zum Messen einer Strahlungsintensität insbesondere in einem Durchlaufofen |
| CN112768372A (zh) * | 2019-11-05 | 2021-05-07 | 伊利诺斯工具制品有限公司 | 烧结设备 |
| DE102020002335B4 (de) | 2020-04-17 | 2022-02-24 | Ce Cell Engineering Gmbh | Verfahren zur Verbesserung des ohmschen Kontaktverhaltens zwischen einem Kontaktgitter und einer Emitterschicht einer Silizumsolarzelle |
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| FR2977079B1 (fr) * | 2011-06-27 | 2013-07-26 | Commissariat Energie Atomique | Procede de traitement de cellules photovoltaiques a heterojonction pour ameliorer et stabiliser leur rendement |
| AU2013266009B2 (en) * | 2012-05-21 | 2017-02-16 | Newsouth Innovations Pty Limited | Advanced hydrogenation of silicon solar cells |
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| US11538956B2 (en) * | 2018-04-27 | 2022-12-27 | Illinois Tool Works Inc. | Methods and apparatus to control zone temperatures of a solar cell production system |
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| KR20160023687A (ko) | 2016-03-03 |
| EP3014663B1 (de) | 2020-09-02 |
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| SG11201510423YA (en) | 2016-01-28 |
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| US11784279B2 (en) | 2023-10-10 |
| CN105340085A (zh) | 2016-02-17 |
| DE112013005591C5 (de) | 2018-10-04 |
| DE112013005591A5 (de) | 2015-10-22 |
| EP3014663A1 (de) | 2016-05-04 |
| KR101807381B1 (ko) | 2018-01-10 |
| US20210057600A1 (en) | 2021-02-25 |
| MY182430A (en) | 2021-01-25 |
| WO2014206504A1 (de) | 2014-12-31 |
| US10892376B2 (en) | 2021-01-12 |
| DE202013012849U1 (de) | 2020-07-03 |
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