MY173674A - Passivation stack on a crystalline silicon solar cell - Google Patents

Passivation stack on a crystalline silicon solar cell

Info

Publication number
MY173674A
MY173674A MYPI2016701768A MYPI2016701768A MY173674A MY 173674 A MY173674 A MY 173674A MY PI2016701768 A MYPI2016701768 A MY PI2016701768A MY PI2016701768 A MYPI2016701768 A MY PI2016701768A MY 173674 A MY173674 A MY 173674A
Authority
MY
Malaysia
Prior art keywords
layer
crystalline
depositing
silicon
silicon oxynitride
Prior art date
Application number
MYPI2016701768A
Other languages
English (en)
Inventor
Junjie Zhu
Su Zhou
Halvard Haug
Marstein Erik Stensrud
Sean Erik Foss
Wenjing Wang
Chunlan Zhou
Original Assignee
Inst Energiteknik
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inst Energiteknik filed Critical Inst Energiteknik
Publication of MY173674A publication Critical patent/MY173674A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6504—In-situ cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystallography & Structural Chemistry (AREA)
MYPI2016701768A 2013-11-19 2014-11-19 Passivation stack on a crystalline silicon solar cell MY173674A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20131549A NO341687B1 (no) 2013-11-19 2013-11-19 Passiveringssabel på en solcelle av krystallinsk silisium

Publications (1)

Publication Number Publication Date
MY173674A true MY173674A (en) 2020-02-14

Family

ID=50030409

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2016701768A MY173674A (en) 2013-11-19 2014-11-19 Passivation stack on a crystalline silicon solar cell

Country Status (7)

Country Link
US (1) US9660130B2 (enExample)
EP (1) EP3072165B1 (enExample)
JP (1) JP2017504186A (enExample)
CN (1) CN105745768B (enExample)
MY (1) MY173674A (enExample)
NO (1) NO341687B1 (enExample)
WO (1) WO2015076678A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3059463B1 (fr) * 2016-11-30 2018-12-07 Commissariat A L'energie Atomique Et Aux Energies Alternatives Structure et procede de passivation.
KR101846444B1 (ko) 2017-01-13 2018-04-06 엘지전자 주식회사 태양 전지
KR102053912B1 (ko) * 2017-09-01 2019-12-09 주식회사 한화 계면 특성이 향상된 perc 솔라셀, 솔라셀 제조 방법 및 제조 장치
CN109950363A (zh) * 2019-03-29 2019-06-28 山西潞安太阳能科技有限责任公司 一种perc太阳能电池的背面钝化工艺
CN110854243B (zh) * 2019-12-31 2024-03-22 太仓市哲泰天产品设计有限公司 一种氮氧化硅perc背钝化方法及钝化炉
CN111416013A (zh) * 2020-05-02 2020-07-14 熵熠(上海)能源科技有限公司 一种以氢化非晶氮氧化硅薄膜为钝化层的异质结太阳电池
CN112382696B (zh) * 2020-10-15 2022-05-10 山西潞安太阳能科技有限责任公司 一种新型晶硅SiON双面电池背钝化工艺
CN115036375B (zh) 2021-02-23 2023-03-24 浙江晶科能源有限公司 太阳能电池及其制作方法、太阳能组件
CN115188833B (zh) 2021-09-06 2023-10-27 上海晶科绿能企业管理有限公司 太阳能电池及其制作方法、光伏组件
CN114883453B (zh) * 2022-06-17 2023-03-28 意诚新能(苏州)科技有限公司 一种双面多层钝化膜、制备方法及晶硅太阳能电池
CN117153897B (zh) * 2023-08-31 2025-04-11 环晟光伏(江苏)有限公司 一种切割边缘包含钝化层的太阳能电池及其制备方法
CN118073430A (zh) * 2024-01-12 2024-05-24 中科研和(宁波)科技有限公司 一种透明叠层钝化膜结构及其制备方法和应用
CN117832296B (zh) * 2024-01-16 2024-12-06 天合光能股份有限公司 太阳能电池及其制备方法
CN118198200B (zh) * 2024-05-14 2024-08-20 金阳(泉州)新能源科技有限公司 一种背接触电池的制作方法

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Publication number Priority date Publication date Assignee Title
US4717631A (en) * 1986-01-16 1988-01-05 Rca Corporation Silicon oxynitride passivated semiconductor body and method of making same
DE10152707B4 (de) * 2001-10-19 2004-08-26 Rwe Schott Solar Gmbh Verfahren zur Herstellung einer Solarzelle
JP2006140282A (ja) * 2004-11-11 2006-06-01 Sharp Corp 結晶シリコン太陽電池の製造方法
EP1872413A1 (en) * 2005-04-14 2008-01-02 Renewable Energy Corporation ASA Surface passivation of silicon based wafers
US20080179762A1 (en) * 2007-01-25 2008-07-31 Au Optronics Corporation Layered structure with laser-induced aggregation silicon nano-dots in a silicon-rich dielectric layer, and applications of the same
KR20110115140A (ko) * 2009-01-27 2011-10-20 가부시키가이샤 알박 태양 전지 및 태양 전지의 제조 방법
JP5334645B2 (ja) * 2009-03-31 2013-11-06 富士フイルム株式会社 可撓性太陽電池モジュール
GB2471128A (en) * 2009-06-18 2010-12-22 Rec Solar As Surface passivation of silicon wafers
KR101381305B1 (ko) * 2010-04-23 2014-04-07 솔렉셀, 인크. 고효율 태양 전지 극 저 표면 재결합 속도를 달성하기 위한 패시베이션 방법 및 장치
DE102011086351A1 (de) * 2011-11-15 2013-05-16 International Solar Energy Research Center Konstanz E.V. Verfahren zur Herstellung einer Solarzelle mit PECVD-Kombinationsschicht und Solarzelle mit PECVD-Kombinationsschicht
JP2013128077A (ja) * 2011-12-19 2013-06-27 Sharp Corp 界面パッシベーション構造、裏面パッシベーション型太陽電池および界面パッシベーション構造の製造方法

Also Published As

Publication number Publication date
US9660130B2 (en) 2017-05-23
CN105745768A (zh) 2016-07-06
JP2017504186A (ja) 2017-02-02
EP3072165A4 (en) 2017-09-06
NO20131549A1 (no) 2015-05-20
WO2015076678A1 (en) 2015-05-28
US20160276519A1 (en) 2016-09-22
EP3072165B1 (en) 2020-07-01
NO341687B1 (no) 2017-12-18
CN105745768B (zh) 2017-11-24
EP3072165A1 (en) 2016-09-28

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