CN105745768B - 晶体硅太阳能电池上的钝化堆叠件 - Google Patents

晶体硅太阳能电池上的钝化堆叠件 Download PDF

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Publication number
CN105745768B
CN105745768B CN201480063181.0A CN201480063181A CN105745768B CN 105745768 B CN105745768 B CN 105745768B CN 201480063181 A CN201480063181 A CN 201480063181A CN 105745768 B CN105745768 B CN 105745768B
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layer
silicon
depositing
silicon oxynitride
crystal silicon
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CN105745768A (zh
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朱俊杰
周肃
H·豪格
E·斯鲁德马斯泰因
S·E·福斯
王文静
周春兰
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Institutt for Energiteknikk IFE
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6504—In-situ cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Sustainable Energy (AREA)
  • Crystallography & Structural Chemistry (AREA)
CN201480063181.0A 2013-11-19 2014-11-19 晶体硅太阳能电池上的钝化堆叠件 Active CN105745768B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NO20131549A NO341687B1 (no) 2013-11-19 2013-11-19 Passiveringssabel på en solcelle av krystallinsk silisium
NO20131549 2013-11-19
PCT/NO2014/050215 WO2015076678A1 (en) 2013-11-19 2014-11-19 Passivation stack on a crystalline silicon solar cell

Publications (2)

Publication Number Publication Date
CN105745768A CN105745768A (zh) 2016-07-06
CN105745768B true CN105745768B (zh) 2017-11-24

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Country Link
US (1) US9660130B2 (enExample)
EP (1) EP3072165B1 (enExample)
JP (1) JP2017504186A (enExample)
CN (1) CN105745768B (enExample)
MY (1) MY173674A (enExample)
NO (1) NO341687B1 (enExample)
WO (1) WO2015076678A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3059463B1 (fr) * 2016-11-30 2018-12-07 Commissariat A L'energie Atomique Et Aux Energies Alternatives Structure et procede de passivation.
KR101846444B1 (ko) 2017-01-13 2018-04-06 엘지전자 주식회사 태양 전지
KR102053912B1 (ko) * 2017-09-01 2019-12-09 주식회사 한화 계면 특성이 향상된 perc 솔라셀, 솔라셀 제조 방법 및 제조 장치
CN109950363A (zh) * 2019-03-29 2019-06-28 山西潞安太阳能科技有限责任公司 一种perc太阳能电池的背面钝化工艺
CN110854243B (zh) * 2019-12-31 2024-03-22 太仓市哲泰天产品设计有限公司 一种氮氧化硅perc背钝化方法及钝化炉
CN111416013A (zh) * 2020-05-02 2020-07-14 熵熠(上海)能源科技有限公司 一种以氢化非晶氮氧化硅薄膜为钝化层的异质结太阳电池
CN112382696B (zh) * 2020-10-15 2022-05-10 山西潞安太阳能科技有限责任公司 一种新型晶硅SiON双面电池背钝化工艺
CN115036375B (zh) 2021-02-23 2023-03-24 浙江晶科能源有限公司 太阳能电池及其制作方法、太阳能组件
CN115188833B (zh) 2021-09-06 2023-10-27 上海晶科绿能企业管理有限公司 太阳能电池及其制作方法、光伏组件
CN114883453B (zh) * 2022-06-17 2023-03-28 意诚新能(苏州)科技有限公司 一种双面多层钝化膜、制备方法及晶硅太阳能电池
CN117153897B (zh) * 2023-08-31 2025-04-11 环晟光伏(江苏)有限公司 一种切割边缘包含钝化层的太阳能电池及其制备方法
CN118073430A (zh) * 2024-01-12 2024-05-24 中科研和(宁波)科技有限公司 一种透明叠层钝化膜结构及其制备方法和应用
CN117832296B (zh) * 2024-01-16 2024-12-06 天合光能股份有限公司 太阳能电池及其制备方法
CN118198200B (zh) * 2024-05-14 2024-08-20 金阳(泉州)新能源科技有限公司 一种背接触电池的制作方法

Citations (3)

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GB2185626B (en) * 1986-01-16 1990-03-28 Rca Corp Silicon oxynitride passivated semiconductor body and method of making same
EP1304748A2 (de) * 2001-10-19 2003-04-23 RWE Solar GmbH Verfahren zur Herstellung einer Solarzelle
GB2471128A (en) * 2009-06-18 2010-12-22 Rec Solar As Surface passivation of silicon wafers

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JP2006140282A (ja) * 2004-11-11 2006-06-01 Sharp Corp 結晶シリコン太陽電池の製造方法
EP1872413A1 (en) * 2005-04-14 2008-01-02 Renewable Energy Corporation ASA Surface passivation of silicon based wafers
US20080179762A1 (en) * 2007-01-25 2008-07-31 Au Optronics Corporation Layered structure with laser-induced aggregation silicon nano-dots in a silicon-rich dielectric layer, and applications of the same
KR20110115140A (ko) * 2009-01-27 2011-10-20 가부시키가이샤 알박 태양 전지 및 태양 전지의 제조 방법
JP5334645B2 (ja) * 2009-03-31 2013-11-06 富士フイルム株式会社 可撓性太陽電池モジュール
KR101381305B1 (ko) * 2010-04-23 2014-04-07 솔렉셀, 인크. 고효율 태양 전지 극 저 표면 재결합 속도를 달성하기 위한 패시베이션 방법 및 장치
DE102011086351A1 (de) * 2011-11-15 2013-05-16 International Solar Energy Research Center Konstanz E.V. Verfahren zur Herstellung einer Solarzelle mit PECVD-Kombinationsschicht und Solarzelle mit PECVD-Kombinationsschicht
JP2013128077A (ja) * 2011-12-19 2013-06-27 Sharp Corp 界面パッシベーション構造、裏面パッシベーション型太陽電池および界面パッシベーション構造の製造方法

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
GB2185626B (en) * 1986-01-16 1990-03-28 Rca Corp Silicon oxynitride passivated semiconductor body and method of making same
EP1304748A2 (de) * 2001-10-19 2003-04-23 RWE Solar GmbH Verfahren zur Herstellung einer Solarzelle
GB2471128A (en) * 2009-06-18 2010-12-22 Rec Solar As Surface passivation of silicon wafers

Also Published As

Publication number Publication date
US9660130B2 (en) 2017-05-23
CN105745768A (zh) 2016-07-06
MY173674A (en) 2020-02-14
JP2017504186A (ja) 2017-02-02
EP3072165A4 (en) 2017-09-06
NO20131549A1 (no) 2015-05-20
WO2015076678A1 (en) 2015-05-28
US20160276519A1 (en) 2016-09-22
EP3072165B1 (en) 2020-07-01
NO341687B1 (no) 2017-12-18
EP3072165A1 (en) 2016-09-28

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