CN112382696B - 一种新型晶硅SiON双面电池背钝化工艺 - Google Patents

一种新型晶硅SiON双面电池背钝化工艺 Download PDF

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CN112382696B
CN112382696B CN202011100277.3A CN202011100277A CN112382696B CN 112382696 B CN112382696 B CN 112382696B CN 202011100277 A CN202011100277 A CN 202011100277A CN 112382696 B CN112382696 B CN 112382696B
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杨飞飞
张波
鲁贵林
赵科巍
郭卫
张云鹏
李雪方
郭丽
杜泽霖
李陈阳
吕爱武
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Shanxi Luan Solar Energy Technology Co Ltd
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Abstract

本发明涉及太阳能电池生产领域，特别涉及双面太阳能电池生产领域。一种新型晶硅SiON双面电池背钝化工艺，在背面晶硅基体上直接制备氮氧化硅层，然后在进行退火，最后再制备氮化硅层；氮氧化硅层为单层膜，采用PECVD的方式沉积，工艺参数为，压力1500‑2000mTorr，温度450‑500℃，功率为8500‑12000W,脉冲开关比为1:10至1:16，所通SiH4/NH3/N2O=1.65/1/4至2.5/1/5,且三种气体SiH4、NH3、N2O总流量需大于7000sccm，时间40‑60s。本发明不仅有效降低了双面电池的背面钝化制造成本，同时创造性的解决钝化SiON膜层变薄后钝化效果变差的问题。

Description

一种新型晶硅SiON双面电池背钝化工艺
技术领域
本发明涉及太阳能电池生产领域，特别涉及双面太阳能电池生产领域。
背景技术
当前，在单晶PERC双面电池的制备工艺中，背面钝化技术是关键的技术难点，不同钝化方式的选择，直接影响电池的制造成本。这其中，氧化铝是应用比较广泛的背钝化技术，主要原因为其制备工艺简单且转换效率较高。氮氧化硅作为另外一种背面钝化技术，电池转换效率与氧化铝相当，但制造成本较低。将氮氧化硅应用于双面电池时，需要考虑背面光子利用率，背膜厚度有所减薄，从而导致氮氧化硅钝化效果变差。
发明内容
本发明所要解决的技术问题是：如何提供一种晶硅SiON双面电池背钝化工艺，其正面安常规单面晶硅电池钝化工艺生产，背面采用新型工业，使得该单面晶硅电池背面效率得到提高。
本发明所采用的技术方案是：一种新型晶硅SiON双面电池背钝化工艺，在背面晶硅基体上直接制备氮氧化硅层，然后在进行退火，最后再制备氮化硅层；氮氧化硅层为单层膜，采用PECVD的方式沉积，工艺参数为，压力1500-2000mTorr，温度450-500℃，功率为8500-12000W,脉冲开关比为1:10至1:16，所通SiH4/NH3/N2O=1.65/1/4至2.5/1/5,且三种气体SiH4、NH3、N2O总流量需大于7000sccm，时间40-60s；退火时工艺参数，压力1500-1800mTorr，温度400-450℃，功率为8000-10000W，脉冲开关比1:10至1:16, 所通N2O/NH3 =0.5/1至1/1,时间300-500s；氮化硅层采用PECVD的方式沉积，工艺参数为，压力1500-2000mTorr,温度450-500℃，功率为7000-13500W,脉冲开关比为1:15至1:17.5，所通SiH4/NH3 =1/4至1/10,时间为720-820s，与氮氧化硅接触的第一层氮化硅膜沉积功率为7000-9000W。
氮氧化硅层的折射率为1.7-2.0，厚度为3-10nm,氮化硅层的折射率为2.1-2.3，厚度为65-85nm，氮化硅层为一层或多层，叠层总厚度为,75-95nm。
本发明的有益效果是：本发明不仅有效降低了双面电池的背面钝化制造成本，同时创造性的解决钝化SiON膜层变薄后钝化效果变差的问题，实现单纯依靠化学钝化实现双面电池较高转换效率的先例。
具体实施方式
实施例1
步骤1 ：SiOxNy沉积，SiOxNy为单层膜，沉积SiOxNy时压力为1500-2000mTorr,温度450-500℃，功率为8500-12000W,脉冲开关比为1:10至1:16，所通SiH4/NH3/N2O=1.65/1/4至2.5/1/5,且三种气体SiH4、NH3、N2O总流量需大于7000sccm，时间为25-35s。
步骤2： SixNy沉积，SixNy膜层沉积时，压力为1500-2000mTorr,温度450-500℃，功率为7000-13500W,脉冲开关比为1:15至1:17.5，所通SiH4/NH3 =1/4至1/10,时间为720-820s。SixNy可制作多层膜，其中多层膜主要差异在于SiH4、NH3流量比。需重点说明，沉积多层膜时，SiOxNy膜层之下第一层SixNy膜沉积功率为7000-9000W，其他沉积参数与上述一致。
实施例2
步骤1：SiOxNy沉积，SiOxNy为单层膜，沉积SiOxNy时压力为1500-2000mTorr,温度450-500℃，功率为8500-12000W,脉冲开关比为1:10至1:16，所通SiH4/NH3/N2O=1.65/1/4至2.5/1/5,且且三种气体SiH4、NH3、N2O总流量需大于7000sccm，时间为40-60s。
步骤2： 退火处理，退火时压力为1500-1800mTorr，温度400-450℃，功率为8000-10000W，脉冲开关比为1:10至1:16, 所通N2O/NH3 =0.5/1至1/1,时间为300-500s。
步骤3：SixNy沉积，SixNy膜层沉积时，压力为1500-2000mTorr,温度450-500℃，功率为7000-13500W,脉冲开关比为1:15至1:17.5，所通SiH4/NH3 =1/4至1/10,时间为720-820s。SixNy可制作多层膜，其中多层膜主要差异在于SiH4、NH3流量比。需重点说明，沉积多层膜时，SiOxNy膜层之下第一层SixNy膜沉积功率为7000-9000W，其他沉积参数与上述一致。
实施例3
步骤1：SiOxNy沉积，SiOxNy为单层膜，沉积SiOxNy时压力为1500-2000mTorr,温度450-500℃，功率为8500-12000W,脉冲开关比为1:10至1:16，所通SiH4/NH3/N2O=1/1/2.5至2.5/1/3.5,且三种气体SiH4、NH3、N2O总流量需大于3500sccm，时间为120-140s。
步骤2： 退火处理，退火时压力为1500-1800mTorr，温度400-450℃，功率为8000-10000W，脉冲开关比为1:10至1:16, 所通N2O/NH3 =1/1至2/1,时间为500-1000s。
步骤3：SixNy沉积，SixNy膜层沉积时，压力为1500-2000mTorr,温度450-500℃，功率为7000-13500W,脉冲开关比为1:15至1:17.5，所通SiH4/NH3 =1/4至1/10,时间为720-820s。SixNy可制作多层膜，其中多层膜主要差异在于SiH4、NH3流量比。需重点说明，沉积多层膜时，SiOxNy膜层之下第一层SixNy膜沉积功率为7000-9000W，其他沉积参数与上述一致。
对比例（一种单面太阳能电池）
步骤1：SiOxNy沉积，SiOxNy为单层膜，沉积SiOxNy时压力为1500-2000mTorr,温度450-500℃，功率为8500-12000W,脉冲开关比为1:10至1:20，所通SiH4/NH3/N2O=0.2/1/2.0至3.5/1/4.0，时间为700-900s。
步骤2：SixNy沉积，SixNy膜层沉积时，压力为1500-2000mTorr,温度450-500℃功率为7000-13500W,脉冲开关比为1:10至1:20，所通SiH4/NH3流量比为1/4至1/10,时间为800-900s。
其中实施例1与实施例2相比，主要区别在于沉积反应时间，实施例1氮氧化硅沉积时间25-35s，实施例2沉积时间40-60s，因反应时间存在差异，导致实施例1与实施例2实际生成的SiOxNy膜结构发生变化，因此实施例2需要增加退火步骤，且退火氛围为N2O/NH3 =0.5/1至1/1，退火时间限定300-500s，需要强调退火氛围N2O至关重要，且流量比控制合适方可。
实施例3与实施例1/2的区别在于SiOxNy膜的气体流量比存在差异，实施例1/2所要求SiH4/NH3/N2O=1.65/1/4至2.5/1/5，而实施例3所要求SiH4/NH3/N2O=1/1/2.5至2.5/1/3.5，由于流量比的差异，实施例3亦增加退火，且退火氛围、时间差别较大，实施例2退火氛围N2O/NH3 =0.5/1至1/1、时间300-500s，实施例3退火氛围N2O/NH3 =1/1至2/1、时间500-1000s，需要强调退火氛围N2O至关重要，且流量比控制合适方可。
需要重点说明，本发明专利所提到的3种实施例，所通气体流量比、沉积时间、退火气体氛围与流量比、退火时间都需精准搭配，微弱变化皆可导致电池片转换效率出现大幅变化，同时不同实施例对SiOxNy膜结构所需气体总流量皆有限制，不同于对比例。此外，实施实施例背面膜层总厚度为75-95nm，对比例背面膜层厚度150-200nm，因膜层厚度的不同导致实际背钝化工艺差异较大，本发明实施例针对不同SiOxNy膜的气体流量比，不增加SiOxNy膜厚度的情况下，通过特殊退火或特殊气体流量比，实现SiOxNy双面电池较高电池转换效率。
表1
Figure DEST_PATH_IMAGE002
如表1所示，3种实施例与对比例（单面PERC工业化电池转换效率）相比，均可实现双面电池的工业化应用。综合评价，实施例1所需工艺时间较短，实施例2电池转换效率最佳，实施例3针对不同规格原料适应性广。

Claims (2)

1.一种新型晶硅SiON双面电池背钝化工艺，其特征在于：在背面晶硅基体上直接制备氮氧化硅层，然后在进行退火，最后再制备氮化硅层；氮氧化硅层为单层膜，采用PECVD的方式沉积，工艺参数为，压力1500-2000mTorr，温度450-500℃，功率为8500-12000W,脉冲开关比为1:10至1:16，所通SiH4/NH3/N2O=1.65/1/4至2.5/1/5,且三种气体SiH4、NH3、N2O总流量需大于7000sccm，时间40-60s；退火时工艺参数，压力1500-1800mTorr，温度400-450℃，功率为8000-10000W，脉冲开关比1:10至1:16, 所通N2O/NH3 =0.5/1至1/1,时间300-500s；氮化硅层采用PECVD的方式沉积，工艺参数为，压力1500-2000mTorr,温度450-500℃，功率为7000-13500W,脉冲开关比为1:15至1:17.5，所通SiH4/NH3 =1/4至1/10,时间为720-820s，与氮氧化硅接触的第一层氮化硅膜沉积功率为7000-9000W。
2.根据权利要求1所述的一种新型晶硅SiON双面电池背钝化工艺，其特征在于：氮氧化硅层的折射率为1.7-2.0，厚度为3-10nm,氮化硅层的折射率为2.1-2.3，厚度为65-85nm，氮化硅层为一层或多层。
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