CN111628010A - 一种晶硅电池背钝化叠层结构及制备工艺 - Google Patents
一种晶硅电池背钝化叠层结构及制备工艺 Download PDFInfo
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- 238000002161 passivation Methods 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 229910017107 AlOx Inorganic materials 0.000 claims abstract description 21
- 229910020776 SixNy Inorganic materials 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910020286 SiOxNy Inorganic materials 0.000 claims abstract description 14
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000003475 lamination Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 24
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 16
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- 235000013842 nitrous oxide Nutrition 0.000 claims description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 7
- 229910000069 nitrogen hydride Inorganic materials 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000011229 interlayer Substances 0.000 claims description 4
- XKMRRTOUMJRJIA-UHFFFAOYSA-N ammonia nh3 Chemical compound N.N XKMRRTOUMJRJIA-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 238000006388 chemical passivation reaction Methods 0.000 claims description 2
- 230000007547 defect Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 238000005215 recombination Methods 0.000 claims description 2
- 230000006798 recombination Effects 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 4
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 4
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
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Abstract
本发明涉及晶硅电池背钝化领域。一种晶硅电池背钝化叠层结构，背面膜层结构自下而上为SixNy/SiOxNy/AlOx，AlOx膜之上为P型硅基体，其中，氧化铝AlOx膜层的折射率为1.6‑1.65，膜厚为5‑10nm，氮氧化硅SiOxNy膜层的折射率为1.7‑2.0，厚度为10‑20nm,氮化硅SixNy减反膜层的折射率为2.1‑2.3，厚度为100‑120nm，叠层总厚度为100‑150nm，x和y为正实数。本发明还涉及该晶硅电池背钝化叠层结构的制备工艺。相比主流的氧化铝工艺，本电池结构制造成本较低。
Description
技术领域
本发明涉及晶硅电池背钝化领域。
背景技术
当前，在单晶PERC电池的制备工艺中，背面钝化技术是关键的技术难点，不同钝化方式的选择，直接影响电池的制造成本。这其中，氧化铝是应用比较广泛的背钝化技术，所制备电池的转换效率高。氧化铝制备方法有ALD、PECVD等，ALD的制备方式镀膜质量好，但设备成本高，而PECVD的制备方式设备成本低，但镀膜质量稍差。
发明内容
本发明所要解决的技术问题是：如何在单晶PERC电池的制备工艺中采用PECVD的制备方式，提高镀膜质量，提高后续光电转换效率。
本发明所采用的技术方案是：一种晶硅电池背钝化叠层结构，背面膜层结构自下而上为SixNy/SiOxNy/AlOx，AlOx膜之上为P型硅基体，其中，氧化铝AlOx膜层的折射率为1.6-1.65，膜厚为5-10nm，氮氧化硅SiOxNy膜层的折射率为1.7-2.0，厚度为10-20nm, 氮化硅SixNy减反膜层的折射率为2.1-2.3，厚度为100-120nm，叠层总厚度为100-150nm，x和y为正实数。
AlOx与P型硅基体之间有氢钝化夹层。
一种晶硅电池背钝化叠层结构的制备工艺，采用等离子体增强化学气相沉积技术PECVD，按如下的步骤进行
步骤一、氧化铝AlOx膜层的制备，工艺气体为三甲基铝TMA，同时通笑气N2O，制备所得AlOx的折射率为1.6-1.65，膜厚为5-10nm，主要对硅基体背表面进行细钝化，氧化铝膜层内的负电荷可对硅基体背表面实现场钝化，减少表面复合速率；
步骤二、氮氧化硅SiOxNy膜层的制备，氧源为N2O，同时通硅烷SiH4和氨气NH3，制备所得SiOxNy膜层的折射率为1.7-2.0，厚度为10-20nm,此膜层主要实现对硅基体的粗钝化，由于PECVD方式制备所得氧化铝致密度低，表面化学钝化效果差，利用氮氧化硅层可进一步增强表面钝化效果，提高转换效率；
步骤三、氮化硅SixNy减反膜层的制备，通SiH4和NH3，制备所得SixNy的折射率为2.1-2.3，厚度为100-120nm，作为减反膜，可增加背表面的反射光，提高光子利用率。
在氧化铝AlOx膜层的制备前首先制备氢钝化夹层，制备过程为，通N2和NH3，维持5min，实现对硅基体的氢钝化，减少硅基体内部的缺陷密度。
本发明的有益效果是：一方面相比主流的氧化铝制造工艺，成本较低，转换效率高，较常规PERC电池，转换效率高0.15%；另一方面，氮氧化硅叠加氧化铝，电池片抗LID效果好，5小时5000W光照光衰仅为0.3%。
具体实施方式
本发明提出一种新的PERC双面电池背膜结构及制备工艺，双面电池背膜结构背面自下而上为SixNy/SiOxNy/AlOx，其中AlOx膜之上为P型硅本体，AlOx的折射率为1.6-1.65，膜厚为5-10nm，SiOxNy的折射率为1.7-2.0，厚度为10-20nm, SixNy的折射率为2.1-2.3，厚度为100-120nm，叠层总厚度为100-150nm。
背面膜层整体的制备工艺实施过程如下：
步骤1：氢钝化时压力为2000-2500mTorr，温度400-450℃，功率为4000-6000W，脉冲开关比为1:4, 所通N2/NH3 =1/1至1/5,时间为300s。
步骤2：沉积AlOx时压力为1500-2000mTorr,温度300-350℃，功率为5000-8000W，脉冲开关比为1:50，所通TMA/N2O =1/3至1/8，时间为20-40s。
步骤3：沉积SiOxNy时压力为1000-1500mTorr,温度450-500℃，功率为4000-6000W,脉冲开关比为1:4，所通SiH4/NH3/N2O=1/0.5/5.2至1/0.8/5.8,时间为50-150s。
步骤 4：沉积SixNy时压力为1000-2000mTorr,温度450-500℃，功率为11000-13000W,脉冲开关比为1:12，所通SiH4/NH3 =1/4至1/10,时间为800-1000s。
相比主流的氧化铝工艺，本电池结构制造成本较低。此外，氮氧化硅叠加氧化铝，电池片抗LID效果好。
Claims (4)
1.一种晶硅电池背钝化叠层结构，其特征在于：背面膜层结构自下而上为SixNy/SiOxNy/AlOx，AlOx膜之上为P型硅基体，其中，氧化铝AlOx膜层的折射率为1.6-1.65，膜厚为5-10nm，氮氧化硅SiOxNy膜层的折射率为1.7-2.0，厚度为10-20nm, 氮化硅SixNy减反膜层的折射率为2.1-2.3，厚度为100-120nm，叠层总厚度为100-150nm，x和y为正实数。
2.根据权利要求1所述的一种晶硅电池背钝化叠层结构，其特征在于：AlOx与P型硅基体之间有氢钝化夹层。
3.一种晶硅电池背钝化叠层结构的制备工艺，其特征在于：采用等离子体增强化学气相沉积技术PECVD，按如下的步骤进行
步骤一、氧化铝AlOx膜层的制备，工艺气体为三甲基铝TMA，同时通笑气N2O，制备所得AlOx的折射率为1.6-1.65，膜厚为5-10nm，主要对硅基体背表面进行细钝化，氧化铝膜层内的负电荷可对硅基体背表面实现场钝化，减少表面复合速率；
步骤二、氮氧化硅SiOxNy膜层的制备，氧源为N2O，同时通硅烷SiH4和氨气NH3，制备所得SiOxNy膜层的折射率为1.7-2.0，厚度为10-20nm,此膜层主要实现对硅基体的粗钝化，由于PECVD方式制备所得氧化铝致密度低，表面化学钝化效果差，利用氮氧化硅层可进一步增强表面钝化效果，提高转换效率；
步骤三、氮化硅SixNy减反膜层的制备，通SiH4和NH3，制备所得SixNy的折射率为2.1-2.3，厚度为100-120nm，作为减反膜，可增加背表面的反射光，提高光子利用率。
4.根据权利要求3所述的一种晶硅电池背钝化叠层结构的制备工艺，其特征在于：在氧化铝AlOx膜层的制备前首先制备氢钝化夹层，制备过程为，通N2和NH3，维持5min，实现对硅基体的氢钝化，减少硅基体内部的缺陷密度。
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