CN111584667A - 一种新型N型晶硅TOPCon电池结构及其制备工艺 - Google Patents
一种新型N型晶硅TOPCon电池结构及其制备工艺 Download PDFInfo
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 8
- 238000002360 preparation method Methods 0.000 title abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 25
- 229910020286 SiOxNy Inorganic materials 0.000 claims abstract description 16
- 229910020776 SixNy Inorganic materials 0.000 claims abstract description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 7
- 239000011574 phosphorus Substances 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 239000013078 crystal Substances 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 22
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 229910019213 POCl3 Inorganic materials 0.000 claims description 3
- 239000011229 interlayer Substances 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl chloride Substances ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 3
- 239000011550 stock solution Substances 0.000 claims description 3
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 abstract description 3
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 abstract description 3
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000004804 winding Methods 0.000 abstract description 2
- 238000005530 etching Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006388 chemical passivation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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Abstract
本发明涉及N型晶硅TOPCon电池生产领域。一种新型N型晶硅TOPCon电池结构，背面膜层结构自下而上为SixNy/SiOx/SiOxNy，其中，中间SiOx为磷掺杂的膜层；其中，SiOxNy层的折射率为1.7‑2.0，厚度为3‑5nm，SiOx层折射率为1.5‑1.7，厚度为50‑100nm，SixNy层折射率为2.1‑2.3，厚度为70‑80nm。本发明还涉及该电池结构的制备工艺。本发明不仅与当前P型PERC电池制程工艺兼容性高，设备投入额小，而且解决了磷掺杂绕度的问题，制造过程产品良率高。
Description
技术领域
本发明涉及N型晶硅TOPCon电池生产领域。
背景技术
太阳能电池是将太阳能转化为电能的基础器件。随着太阳能电池工艺技术的不断进步与深入，高效降本已经成为当前太阳电池产业化发展的重要方向，高效结构设计和提高制造良率是实现这一目标的关键。目前，业界的主流产品为P型晶硅太阳能电池，该电池工艺简单，但是具有光致衰减效应，即电池的效率会随着时间的增加而逐渐衰减，而N型电池由于少子寿命高、无光致衰减等特性，逐渐发展成为下一代高效电池产品之一。
发明内容
本发明所要解决的技术问题是：如何解决现有P型PERC电池效率低、光衰大的问题。
本发明所采用的技术方案是：一种新型N型晶硅TOPCon电池结构，背面膜层结构自下而上为SixNy /SiOx/SiOxNy，其中，中间SiOx为磷掺杂的膜层；其中，SiOxNy层的折射率为1.7-2.0，厚度为3-5nm，SiOx层折射率为1.5-1.7，厚度为50-100nm，SixNy层折射率为2.1-2.3，厚度为70-80nm。
内膜层SiOxNy，充当隧穿氧化层，可对硅基体背表面进行化学钝化，有效降低表面的复合速率；中间层SiOx，在充当电子选择层的同时，有效降低背面接触电阻，提高填充因子；外层SixNy，主要用作减反射膜。
一种新型N型晶硅TOPCon电池结构的制备工艺，背面膜层结构按照如下的步骤进行制备
步骤一、背面SiOx/SiOxNy膜层的制备，使用PECVD设备，沉积SiOxNy时，压力为1500-2000mTorr,温度450-500℃，功率为10000-12000W,脉冲开关比为1:16，所通SiH4/NH3/N2O=1/0.5/5.2至1/0.8/5.8,时间为15-45s；沉积SiOx时，压力为1500-2000mTorr,温度450-500℃，功率为10000-12000W,脉冲开关比为1:16，所通SiH4/N2O=2/1至4/1,时间为400-800s；
步骤二、背面中间层SiOx磷掺杂的制备，采用磷扩散方式，通入300sccm的N2、500-1000sccm的N2-POCl3、400-900sccm的O2，反应温度780-820℃，时间为200-400s；
步骤三、背面清洗，清洗边缘与背面部分PSG，使用原液体积比浓度为49%的HF，与H2O配置成1%体积浓度的混合液，反应时间为0.5min；
步骤四、背面SixNy膜层的制备，采用PECVD的方式，沉积SixNy时压力为1000-2000mTorr,温度450-500℃，功率为11000-13000W,脉冲开关比为1:12，所通SiH4/NH3 =1/4至1/10,时间为800-1200s。
本发明中X和y用于反应分子式中的原子之间的比例关系，取正数。
本发明的有益效果是：本发明不仅与当前P型PERC电池制程工艺兼容性高，设备投入额小，而且解决了磷掺杂绕度的问题，制造过程产品良率高。
附图说明
图1是本发明结构的示意图。
具体实施方式
参照图1，一种新型N型晶硅TOPCon电池结构及其制备工艺，本发明的背面膜层结构自下而上为SixNy /SiOx/SiOxNy，其中，中间SiOx为具有一定磷掺杂浓度的膜层。其中内层SiOx/SiOxNy，使用PECVD设备沉积，制备所得SiOxNy的折射率为1.7-2.0，厚度为3-5nm；制备所得SiOx,在富SiH4的氛围下沉积，SiOx折射率为1.5-1.7，厚度为50-100nm；外层SixNy，使用PECVD设备沉积，制备所得SixNy的折射率为2.1-2.3，厚度为70-80nm。
具体的制备工艺实施过程如下：
1. 清洗制绒。制绒使用碱制绒，刻蚀量控制在0.4-0.6g，反射率7%-12%。
2. 硼扩散。扩散温度940-960℃，扩散方阻100-150Ω/sqr。
3. 背面刻蚀。使用碱刻蚀，刻蚀量控制在0.14-0.17g，反射率35%-45%。
4. 正面氧化铝制备。AlOx折射率1.6-1.65，膜厚3-5nm。
5. 正面氮化硅膜制备。在管式PECVD中制备氮化硅，折射率为2.03-2.10，膜厚为75-80nm。
6. 背面SiOx/SiOxNy膜层的制备。使用PECVD设备，沉积SiOxNy时，压力为1500-2000mTorr,温度450-500℃，功率为10000-12000W,脉冲开关比为1:16，所通SiH4/NH3/N2O=1/0.5/5.2至1/0.8/5.8,时间为15-45s；沉积SiOx时，压力为1500-2000mTorr,温度450-500℃，功率为10000-12000W,脉冲开关比为1:16，所通SiH4/N2O=2/1至4/1,时间为400-800s。
7. 背面中间层SiOx磷掺杂的制备。采用磷扩散方式，通入300sccm的N2、500-1000sccm的N2-POCl3、400-900sccm的O2，反应温度780-820℃，时间为200-400s。
8. 背面清洗。清洗边缘与背面部分PSG。使用原液浓度为49%HF，与H2O配置成1%体积浓度的混合液，反应时间为0.5min。
9. 背面SixNy膜层的制备。采用PECVD的方式，沉积SixNy时压力为1000-2000mTorr,温度450-500℃，功率为11000-13000W,脉冲开关比为1:12，所通SiH4/NH3 =1/4至1/10,时间为800-1200s。
10.丝网印刷及高温烧结。
Claims (2)
1.一种新型N型晶硅TOPCon电池结构，其特征在于：背面膜层结构自下而上为SixNy /SiOx/SiOxNy，其中，中间SiOx为磷掺杂的膜层；其中，SiOxNy层的折射率为1.7-2.0，厚度为3-5nm，SiOx层折射率为1.5-1.7，厚度为50-100nm，SixNy层折射率为2.1-2.3，厚度为70-80nm。
2.一种权利要求1所述新型N型晶硅TOPCon电池结构的制备工艺，其特征在于：背面膜层结构按照如下的步骤进行制备
步骤一、背面SiOx/SiOxNy膜层的制备，使用PECVD设备，沉积SiOxNy时，压力为1500-2000mTorr,温度450-500℃，功率为10000-12000W,脉冲开关比为1:16，所通SiH4/NH3/N2O=1/0.5/5.2至1/0.8/5.8,时间为15-45s；沉积SiOx时，压力为1500-2000mTorr,温度450-500℃，功率为10000-12000W,脉冲开关比为1:16，所通SiH4/N2O=2/1至4/1,时间为400-800s；
步骤二、背面中间层SiOx磷掺杂的制备，采用磷扩散方式，通入300sccm的N2、500-1000sccm的N2-POCl3、400-900sccm的O2，反应温度780-820℃，时间为200-400s；
步骤三、背面清洗，清洗边缘与背面部分PSG，使用原液体积比浓度为49%的HF，与H2O配置成1%体积浓度的混合液，反应时间为0.5min；
步骤四、背面SixNy膜层的制备，采用PECVD的方式，沉积SixNy时压力为1000-2000mTorr,温度450-500℃，功率为11000-13000W,脉冲开关比为1:12，所通SiH4/NH3 =1/4至1/10,时间为800-1200s。
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| CN115377252A (zh) * | 2022-10-24 | 2022-11-22 | 英利能源发展(天津)有限公司 | 一种抑制pecvd法生长多晶硅表面爆膜的方法 |
| CN116190498A (zh) * | 2021-11-26 | 2023-05-30 | 通威太阳能(眉山)有限公司 | 制备隧穿氧化层和非晶硅薄膜的方法及TOPCon电池 |
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