CN110444634A - 一种p型单晶perc双面电池及其制作方法 - Google Patents
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Abstract
本发明提供了一种P型单晶PERC双面电池及其制作方法,包括如下步骤:步骤S1,表面制绒;步骤S2,扩散形成PN结;步骤S3,周边刻蚀及背面抛光;步骤S4,二氧化硅层制备;步骤S5,背面叠层膜制备;步骤S6,正面氮氧化硅层制备;步骤S7,背面激光开槽;步骤S8,正、背面电极制备。经本发明制作方法制备的P型单晶PERC双面电池,正面采用二氧化硅/氮氧化硅膜层结构代替常规氮化硅膜层,折射率可调控,可有效解决正面PID问题;背面采用AlOx/SixOyNz/SixCyNz叠层膜,具有很好的化学稳定性和很强的抗杂质扩散和水汽渗透能力;SiOxNy/SixCyNz膜层相比常规SiNx膜层,可有效解决背面PID问题,此外,SiOxNy/SixCyNz膜层的折射率可根据不同反应气体的比例而变化,具有良好的光学和电学特性。
Description
技术领域
本发明涉及一种太阳能电池及其制作方法,具体涉及一种P型单晶PERC双面电池及其制作方法,属于太阳能电池生产制造技术领域。
背景技术
目前,太阳能电池发展的主要目标是降低成本,提升光电转换效率。PERC双面电池正反面都可以接受光照,双面均可发电,提升了单位面积的电量输出。同时,也正是由于PERC双面电池两面都要受光发电,因此正、背面均存在PID(Potential induceddegradation,全称为电势诱导衰减)问题。PID通常是指电池组件长期高电压工作,在盖板玻璃封装材料与边框之间存在漏电流,使得电池片表面的钝化效果恶化,导致电池组件性能衰减下降。
如今,双面电池的正面PID问题通常采用折射率相对较高的氮化硅薄膜并且搭配臭氧氧化法或者热氧化法在正面形成一层二氧化硅薄膜,并在组件端使用普通EVA封装膜便可解决。而背面的叠层膜是氧化铝薄膜和氮化硅薄膜结构,抗PID性能差,需要组件端采用特殊POE材料进行封装;但正面的EVA封装膜封装工艺与背面的POE封装工艺不同,两者不能兼容。目前,为了解决PERC双面电池两面都存在的PID问题,组件端只能两面都采用昂贵的POE材料封装膜解,但又导致电池制造成本骤增,不符合光伏行业降成本、平价上网的发展趋势。
发明内容
针对现有技术的以上缺陷或改进需求,本发明提供了一种P型单晶PERC双面电池及其制作方法,以解决上述至少一个问题。
为实现以上目的,本发明采用以下技术方案:
根据本发明的一个方面,提供了一种P型单晶PERC双面电池的制作方法,包括如下步骤:
步骤S1,表面制绒:硅片在碱溶液下经过各向异性腐蚀在表面形成金字塔状形貌,以降低表面反射,反射率:11-12%;
步骤S2,扩散形成PN结:采用液态磷源法通过高温扩散,在P型硅片中掺入磷原子,形成PN结,方阻:110-120欧姆;再采用激光掺杂方法在正面电极区域形成重掺区,方阻为:90-95欧姆;
步骤S3,周边刻蚀及背面抛光:清洗去除硅片表面残留的磷硅玻璃及周围边缘PN结;同时,背面经酸液腐蚀后进行抛光处理,减重0.25-0.35g,背面反射率:32-36%;
步骤S4,二氧化硅层制备:通入适量的高纯度氧气,采用热氧化方法在硅片正、背面沉积一层二氧化硅薄膜,其中,热氧化温度:600-700℃,氧气流量:1000-2000sccm,时间:15-30min;
步骤S5,背面叠层膜制备:使用PECVD法在硅片背面制备AlOx/ SixOyNz /SixCyNz叠层膜,其中,AlOx膜厚度为15-20nm,折射率:1.65;采用不同比例均匀混合的SiH4、NH3和N2O制备SixOyNz膜,厚度:60-100nm,折射率:2.05-2.10;采用不同比例均匀混合的SiH4、CH4、NH3和N2O制备SixCyNz膜,厚度:20-60nm,折射率:2.10-2.20;
步骤S6,正面氮氧化硅层制备:至少一层膜结构的正面氮氧化硅层制备的条件为:沉积温度:450-550℃,N2O流量:200-800sccm,压力:1500-2000pa,沉积时间:500-700s;
步骤S7,背面激光开槽:利用激光相融原理进行背面叠层钝化膜局部开槽,背面激光图形参数为:线数:120-160根;光斑直径:10-35μm,激光线的间距:500-700μm;
步骤S8,正、背面电极制备:背面印刷背面电极和铝栅线,背面采用铝栅线、铝背场网版结构,其中,铝栅线宽度:120-270μm,副栅根数:120-160根;正面印刷正面电极银栅线,再经过高温烧结,制得P型单晶PERC双面电池。
进一步地,根据本发明的制作方法,步骤S6中正面氮氧化硅层采用三层膜结构,其中,触接硅片基底的为第一层膜,第一层膜厚:35-45nm,折射率:2.15-2.25;第二层膜厚:20-30nm,折射率:2.05-2.15;第三层膜厚:10-15nm,折射率:1.90-2.00。
进一步地,根据本发明的制作方法,所述正面氮氧化硅层的等效总厚度为75-80nm,等效折射率为2.05-2.15。
进一步地,根据本发明的制作方法,步骤S4制备的二氧化硅层的厚度为2-5nm。
根据本发明的另一方面,提供了一种P型单晶PERC双面电池,使用上述的制作方法制作而成。
与已有技术相比,通过本发明制作方法制备的P型单晶PERC双面电池具有如下有益效果:
1.正面采用二氧化硅/氮氧化硅膜层结构代替常规氮化硅膜层,由于氮氧化硅兼顾二氧化硅和氮化硅两者优点,同时折射率可调控,可有效解决正面PID问题,此外,可以吸收更多的入射光,增加光生载流子,提高电池短路电流;
2.背面采用AlOx/SixOyNz/SixCyNz叠层膜,SixOyNz薄膜是二氧化硅和氮化硅的中间相,其光学和电学性能介于两者之间,同时具有很好的化学稳定性和很强的抗杂质扩散和水汽渗透能力;SixCyNz薄膜硬度高,具有优越的机械性能、热特性、抗腐蚀性、耐磨性及抗辐射性,化学性能更稳定;SiOxNy/SixCyNz膜层相比常规SiNx膜层,可有效解决背面PID问题,此外,SiOxNy/SixCyNz膜层的折射率可根据不同反应气体的比例而变化,具有良好的光学和电学特性。
附图说明
图1是本发明制作方法流程图;
图2是本发明电池结构示意图;
其中,部件说明如下:
1、正面电极;2、SixOyNz层;3、正面二氧化硅层;4、硅片基底;5、背面二氧化硅层;6、AlOx层;7、SixOyNz层;8、SixCyNz层;9、背面电极。
具体实施方式
下面结合附图和具体的实施方式对本发明作进一步详细的说明。所述实施例的示例在附图中示出,在下述本发明的实施方式中描述的具体的实施例仅作为本发明的具体实施方式的示例性说明,旨在用于解释本发明,而不构成为对本发明的限制。
实施例1
步骤S1,表面制绒,也称碱制绒:利用碱溶液对硅片进行腐蚀,在硅片表面腐蚀形成形成金字塔状表面形貌,反射率:11%;
步骤S2,扩散形成PN结,也称磷扩散:扩散方阻:120欧姆;激光掺杂方法在正面电极1区域形成重掺区,方阻为:95欧姆;
步骤S3,周边刻蚀及背面抛光:减重:0.25g,背面反射率:42%;
步骤S4,采用热氧化方法在正、背面沉积一层二氧化硅薄膜,二氧化硅层厚度:3nm;
步骤S5,背面使用PECVD法制备AlOx/ SixOyNz /SixCyNz叠层膜,其中,AlOx层厚度17nm,折射率:1.65;采用均匀混合的SiH4:NH3:N2O=1.5:5.5:2.5制备SixOyNz层,SixOyNz层厚度:70nm,折射率:2.05;采用均匀混合的SiH4、CH4、NH3、N2O=2.5:1.5:4.5:2.0制备SixCyNz层,SixOyNz层厚度:40nm,折射率:2.20;
步骤S6,正面氮氧化硅层制备:为更好地起到抗PID及减反射效果,正面氮氧化硅层采用三层膜结构,其中,沉积温度:450-550℃,N2O流量:500sccm,压力:1500-2000pa,沉积时间:500-700s,靠近硅片基底4的为第一层膜,第一层膜厚:45nm,折射率:2.20;第二层膜厚:25nm,折射率:2.10;第三层膜厚:15nm,折射率:1.90;
步骤S7,背面激光开槽:利用激光相融原理进行背面叠层钝化膜局部开槽,背面局部打开薄膜,背面激光图形参数为:线数:120-160根,光斑直径:10-35μm,激光线的间距:500-700μm;
步骤S8,背面印刷背面电极和铝栅线,背面采用铝栅线、铝背场网版结构,其中,铝栅线宽度:120-270μm,副栅根数:120-160根;正面印刷正面电极银栅线,最后高温烧结,制得P型单晶PERC双面电池。
实施例2
步骤S1,碱制绒:利用碱溶液对硅片进行腐蚀,在硅片表面腐蚀形成形成金字塔状表面形貌,反射率:11%;
步骤S2,磷扩散:扩散方阻:120欧姆;激光掺杂方法在正面电极区域形成重掺区,方阻为:95欧姆;
步骤S3,周边刻蚀及背面抛光:减重:0.25g,背面反射率:42%;
步骤S4,采用热氧化方法在正、背面沉积一层二氧化硅薄膜,二氧化硅层厚度:3nm;
步骤S5,背面使用PECVD法制备AlOx/ SixOyNz /SixCyNz叠层膜,其中,AlOx层厚度17nm,折射率:1.65;采用均匀混合的SiH4:NH3:N2O=2:5.5:3.5制备SixOyNz层,SixOyNz层厚度:80nm,折射率:2.10;采用均匀混合的SiH4、CH4、NH3、N2O=2.5:2.0:4.5:21.5制备SixCyNz层,SixOyNz层厚度:30nm,折射率:2.15;
步骤S6,正面氮氧化硅层制备:为更好地起到抗PID及减反射效果,正面氮氧化硅层采用三层膜结构,其中,沉积温度:450-550℃,N2O流量:500sccm,压力:1500-2000pa,沉积时间:500-700s,靠近硅片基底4的为第一层膜,第一层膜厚:45nm,折射率:2.20;第二层膜厚:25nm,折射率:2.10;第三层膜厚:15nm,折射率:1.90;
步骤S7,背面激光开槽:利用激光相融原理进行背面叠层钝化膜局部开槽,背面局部打开薄膜,背面激光图形参数为:线数:120-160根,光斑直径:10-35μm,激光线的间距:500-700μm;
步骤S8,背面印刷背面电极和铝栅线,背面采用铝栅线、铝背场网版结构,其中,铝栅线宽度:120-270μm,副栅根数:120-160根;正面印刷正面电极银栅线,最后高温烧结,制得P型单晶PERC双面电池。
对照组
除下述步骤外,其它各制作工艺步骤与本发明实例例均相同:
背面氧化铝/氮化硅叠层膜制备:使用PECVD法沉积氧化铝和氮化硅薄膜,氧化铝膜厚度17-20nm,沉积氮化硅工艺条件为:沉积温度:450℃,SiH4流量:700sccm,NH3流量:6700sccm,压力:1800pa,沉积时间:910s,氮化硅膜厚110-120nm,折射率:2.05-2.10。
正面氮化硅层制备:使用PECVD法在正面沉积氮化硅薄膜,其中,沉积温度:450℃,SiH4流量:1300sccm,NH3流量:6400sccm,压力:1800pa,沉积时间:600s,氮化硅膜厚85nm,折射率:2.07-2.10。
此外,实施例1、实施例2和对照组均采用常规EVA封装膜材料。
实施例1、实施例2和对照组制备的P型单晶双面PERC电池的抗PID测试结果如下,其中,测试条件为:温度:85°C,相对湿度:85%,加载电压:-1000V,连续测试96小时,PID衰减值测试结果<5%即为合格。
综上可知,实施例1和实施例2制作的电池中,正、背面衰减值均合格(<5%),表明通过本发明的制作方法及改进制作工艺对双面电池的抗PID性能产生明显的效果;此外,实施例1和实施例2的背面采用PECVD法沉积AlOx/SixOyNz/SixCyNz叠层膜,电池背面LID衰减率分别为2.55%、2.83%,与对照组的双面电池背面AlOx/SiNx叠层膜结构(背面衰减率6.84%)相比,背面衰减率明显降低,可以更好解决背面PID问题。
本发明还提供了一种P型单晶PERC双面电池,使用上述的制作方法制作而成,其技术优势表现为:
1.正面减反射薄膜采用二氧化硅/氮氧化硅膜层结构,相比现在单一的氮化硅膜层结构,氮氧化硅薄膜比较致密,具有很好的化学稳定性和很强的抗杂质扩散和水汽渗透能力,也可以有效解决正面PID问题;此外,二氧化硅/氮氧化硅膜层的折射率可根据反应气体的比例变化而调控,钝化效果更佳,能更好地满足光学特性,吸收更多的入射光,产生更多的光生载流子;
2.背面采用PECVD法沉积AlOx/SixOyNz/SixCyNz叠层膜,与传统的双面电池背面AlOx/SiNx叠层膜结构相比,可更好解决背面PID问题。使用SiOxNy/SixCyNz代替了SiNx薄膜;SixOyNz薄膜是二氧化硅和氮化硅的中间相,其光学和电学性能介于两者之间,同时具有很好的化学稳定性和很强的抗杂质扩散和水汽渗透能力;SixCyNz薄膜硬度高,具有优越的机械性能、热特性、抗腐蚀性、耐磨性及抗辐射性,化学性能更稳定;此外,SiOxNy/SixCyNz膜层的折射率可根据不同反应气体的比例变化而调控;还具有良好的光学和电学特性。
应该注意的是,上述实施例是对本发明进行说明而不是对本发明进行限制,并且本领域技术人员在不脱离所附权利要求的范围的情况下可设计出替换实施例。在权利要求中,单词“包含”不排除存在未列在权利要求中的数据或步骤。
Claims (5)
1.一种P型单晶PERC双面电池的制作方法,其特征在于,包括如下步骤:
步骤S1,表面制绒:硅片在碱溶液下经过各向异性腐蚀在表面形成金字塔状形貌,以降低表面反射,反射率:11-12%;
步骤S2,扩散形成PN结:采用液态磷源法通过高温扩散,在P型硅片中掺入磷原子,形成PN结,方阻:110-120欧姆;再采用激光掺杂方法在正面电极区域形成重掺区,方阻为:90-95欧姆;
步骤S3,周边刻蚀及背面抛光:清洗去除硅片表面残留的磷硅玻璃及周围边缘PN结;同时,背面经酸液腐蚀后进行抛光处理,减重0.25-0.35g,背面反射率:32-36%;
步骤S4,二氧化硅层制备:通入适量的高纯度氧气,采用热氧化方法在硅片正、背面沉积一层二氧化硅薄膜,其中,热氧化温度:600-700℃,氧气流量:1000-2000sccm,时间:15-30min;
步骤S5,背面叠层膜制备:使用PECVD法在硅片背面制备AlOx/ SixOyNz /SixCyNz叠层膜,其中,AlOx膜厚度为15-20nm,折射率:1.65;采用不同比例均匀混合的SiH4、NH3和N2O制备SixOyNz膜,厚度:60-100nm,折射率:2.05-2.10;采用不同比例均匀混合的SiH4、CH4、NH3和N2O制备SixCyNz膜,厚度:20-60nm,折射率:2.10-2.20;
步骤S6,正面氮氧化硅层制备:至少一层膜结构的正面氮氧化硅层制备的条件为:沉积温度:450-550℃,N2O流量:200-800sccm,压力:1500-2000pa,沉积时间:500-700s;
步骤S7,背面激光开槽:利用激光相融原理进行背面叠层钝化膜局部开槽,背面激光图形参数为:线数:120-160根;光斑直径:10-35μm,激光线的间距:500-700μm;
步骤S8,正、背面电极制备:背面印刷背面电极和铝栅线,背面采用铝栅线、铝背场网版结构,其中,铝栅线宽度:120-270μm,副栅根数:120-160根;正面印刷正面电极银栅线,再经过高温烧结,制得P型单晶PERC双面电池。
2.根据权利要求1所述的P型单晶PERC双面电池的制作方法,其特征在于:步骤S6中正面氮氧化硅层采用三层膜结构,其中,触接硅片基底的为第一层膜,第一层膜厚:35-45nm,折射率:2.15-2.25;第二层膜厚:20-30nm,折射率:2.05-2.15;第三层膜厚:10-15nm,折射率:1.90-2.00。
3.根据权利要求2所述的P型单晶PERC双面电池的制作方法,其特征在于:所述正面氮氧化硅层的等效总厚度为75-80nm,等效折射率为2.05-2.15。
4.根据权利要求1所述的P型单晶PERC双面电池的制作方法,其特征在于:步骤S4制备的二氧化硅层的厚度为2-5nm。
5.一种P型单晶PERC双面电池,其特征在于,使用权利要求1至4中任一项所述的制作方法制作而成。
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