CN102668102A - 抗极化太阳能电池 - Google Patents
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Abstract
提供了抗极化太阳能电池。太阳能电池(200)采用布置在电池正面的双层介电堆。介电堆由直接布置在电池正面、并且由SiOx或SiON组成的钝化层(209),和由SiCN组成的外部AR涂层(211)组成。
Description
优先权声明
本申请主张2009年12月24日提交的序列号为12/647,201的美国申请和2009年10月27日提交的美国临时申请第61/279,842号的权利,上述申请的公开内容以引用的方式全部并入本文。
技术领域
本发明一般地涉及太阳能电池,并且特别涉及抗极化太阳能电池设计。
背景技术
光电池,通常称作太阳能电池,是众所周知的将光子转变成电能的半导体设备。图1提供常规的太阳能电池100的截面图,常规的太阳能电池包括第一导电类型衬底101(该衬底常常由硅组成)和形成在衬底上的第二导电类型层103,从而形成界面处的p-n结。太阳能电池100也包括与衬底101的至少一部分接触的背面电极105,和与层103的至少一部分接触的正面电极107。当光落到太阳能电池100上时,创建电子空穴对,并且通过太阳能电池将单子空穴对转变成电能。
为了提高传统的太阳能电池的性能,常常将介电层109沉积在太阳能电池的正面上。介电层109提供双重目的。第一,它担当防反射(AR)涂层,从而增加进入电池100的入射光的百分比,导致提高的转换效率。第二,它在层103的表面上形成钝化层。在一些太阳能电池中,介电层109由一对层组成;内部的钝化层和外部的AR层。
由于能量消耗的增加和与传统能源相关的增加的环境关注,太阳能电池正在广泛的应用中变得普遍。逐步提高的太阳能电池性能和电池成本的稳定减少已经有助于向太阳能的转变。典型的应用中,例如用于住宅房或商业房屋顶上或太阳能电厂中的太阳能阵列,大量太阳能面板电连接在一起,每个太阳能面板由太阳能电池的较大阵列组成。
当太阳能面板或太阳能面板的阵列投入运行时,超过100V的高电压可能存在于面板框架或外部接地和单独设备的一个或更多终端之间。结果,产生电场,其可以在介电层或用于电池制造的层(例如,图1的钝化和AR层109)上创建电荷。久而久之,介电层上的电荷的累积导致表面极化,表面极化转而在电池的p-n结上感应电场。结果,使得分流电阻和p-n结特性显著变差,导致电池转换效率的明显降低和电池功率输出的潜在完全停止。因此,需要抵抗表面极化而不显著影响制造过程、全部电池制造成本或电池性能的太阳能电池设计。本发明提供这样的设计。
发明内容
本发明提供抵抗极化效应的太阳能电池,太阳能电池采用布置在电池正面的双层介电堆。介电堆由直接布置在电池正面、并且由SiOx或SiON组成的钝化层,和由SiCN组成的外部AR涂层组成。可以通过参考说明书的剩余部分和附图实现对本发明的本性和优点的进一步理解。
附图说明
图1是常规的硅太阳能电池的截面图。
图2提供根据本发明的示例性设备结构的截面图。
具体实施方式
在本发明的以下详细描述中参考了附图,附图形成本说明书的一部分,并且在附图中以图解的形式示出了可以实施本发明的具体实施方式。对于这些实施方式的具体描述足以使得本领域技术人员能够实施本发明。可以采用其他实施方式,并且可以做结构上的、逻辑上的和电的改变。
图2提供根据本发明的优选太阳能电池设备结构200的截面图。硅衬底201可以是p-型或n-型。与常规太阳能电池一样,第二导电类型硅层203形成在衬底201上,从而形成电池的p-n结。背面电极205(例如由铝组成)接触衬底201的至少一部分或者如图所示接触衬底的整个背面。为了接触设备的正面(更具体而言,即层203),优选地多个正面电极207(优选地由银组成)被应用到设备的正面,例如采用本领域的技术人员公知的手指/汇流排配置。
根据本发明,将两层介电堆应用到电池200的正面。介电堆由直接应用到层203的内部钝化层209和最外部的AR层211组成。可以由氧化硅(也就是SiOx)或氮氧化硅(也就是SiON)制造钝化层209。由非晶碳氮化硅(SiCN)制造AR涂层211。发明人已经发现:采用这两个介电层实质上减少了(如果没有完全消除)由包含在模块中的太阳能电池典型地经历的极化效应。
为了实现表面钝化的期望水平,钝化层209的厚度处于1至100纳米范围,优选地处于1到50纳米范围,并且更优选地处于2到30纳米范围。如果层209由SiON组成,而不是由SiOx组成,然后该层中的氧和氮的量由该层中的氧的分数定义,也就是,氧和氧、氮之和之间的比(也就是O/(O+N))。优选地,氧的分数处于0.01到0.99范围,更优选地,处于0.1到0.9范围,并且更加优选地处于0.4到0.9范围。在一个实施方式中,SiON层209中的氧的分数从最接近衬底201的富氧部分到最远离衬底201的富氮部分而变化,以形成分级组分。富氧地区提供良好的钝化,而富氮地区提供良好的AR属性。
AR层211,由之前提到的SiCN组成,具有处于1到200纳米范围(优选地处于20到120纳米范围,并且更优选地处于40到100纳米范围)的厚度。层209和211的复合厚度处于2到300纳米范围,折射率处于1.5到2.4范围。至少一个实施方式中,SiCN层211被氢化。
将会意识到的是,各种技术中的任何一种可以用于形成层203,形成介电层209和211,以及应用接触205和207,并且本设计不局限于具体制造方法。在层209由SiOx组成的示例性过程中,采用热氧化、化学氧化或CVD氧化沉积形成层209。在层209由SiON组成的示例性过程中,采用就地氧氮化硅沉积工艺(比如,SiON的CVD沉积)沉积层209。在备选过程中,首先通过沉积氧化层(优选地,厚度在4纳米以上,在硅层203的上面)形成SiON层,例如采用热氧化、化学氧化或CVD氧化沉积。下一步,将氮化层沉积,使氧化硅转变为具有期望厚度和组分的氧氮化硅。一个例子中,转变氧化层上的氮化层产生上面描述的分级组分。备选地,之前生长的氧化层可以在氮环境中退火,从而将氧化硅转变成期望的氧氮化硅。
太阳能电池的一些例子包括:
A、太阳能电池包括:
由第一导电类型的硅组成的衬底;
布置在所述衬底上的第二导电类型的硅层;
布置在所述硅层上的钝化层,其中所述钝化层选自氧化硅和氧氮化硅;以及
布置在所述钝化层上的防反射(AR)层,其中,所述AR层由碳氮化硅(SiCN)组成。
B、前面例子的任何一个中的太阳能电池,其中,所述钝化层的厚度在1和100纳米之间。
C、例子A-B的任何一个中的太阳能电池,其中,所述钝化层的厚度在1和50纳米之间。
D、例子A-C的任何一个中的太阳能电池,其中,所述钝化层的厚度在2和30纳米之间。
E、例子A-D的任何一个中的太阳能电池,其中,所述AR层的厚度在1和200纳米之间。
F、例子A-E的任何一个中的太阳能电池,其中,所述AR层的厚度在20和120纳米之间。
G、例子A-F的任何一个中的太阳能电池,其中,所述AR层的厚度在40和100纳米之间。
H、例子A-G的任何一个中的太阳能电池,其中,由所述钝化层和所述AR层组成的介电堆的反射率处于1.5到2.4范围。
I、例子A-H的任何一个中的太阳能电池,其中,所述钝化层由所述SiON组成,并且其中所述SiON层中的氧与所述SiON层中的氧和氮之和的比处于0.01到0.99范围。
J、例子A-I的任何一个中的太阳能电池,其中,所述钝化层由所述SiON组成,并且其中所述SiON层中的氧与所述SiON层中的氧和氮之和的比处于0.1到0.9范围。
K、例子A-J的任何一个中的太阳能电池,其中,所述钝化层由所述SiON组成,并且其中所述SiON层中的氧与所述SiON层中的氧和氮之和的比处于0.4到0.9范围。
L、例子A-K的任何一个中的太阳能电池,其中,所述AR层被氢化。
M、例子A-L的任何一个中的太阳能电池,进一步包括形成在所述衬底的背面的第一金属电极和与所述第二导电类型的所述硅层接触的第二金属电极。
应该理解的是,用于多个图的同一元件符号指的是同一结构,或具有同等功能的结构。另外,附图仅意在示出(而不是限制)本发明的范围,并且不应该把附图看作是按比例绘制的。
尽管描述了本发明的许多实施方式,但目的并不是进行详尽无遗漏的罗列。尽管这里已经说明并描述了具体实施方式,本领域的技术人员将会意识到的是,意在实现同样目的的任何安排都可以替换显示的具体实施方式。该应用旨在覆盖本发明的任何改型或变型。应该理解的是,上面的描述的意图是说明性的,不是限制性的。在研究上述描述时,上述实施方式的组合以及其他实施方式对于本领域技术人员而言将是明显的。
Claims (13)
1.一种太阳能电池包括:
由第一导电类型的硅组成的衬底;
布置在所述衬底上的第二导电类型的硅层;
布置在所述硅层上的钝化层,其中所述钝化层选自氧化硅和氧氮化硅;以及
布置在所述钝化层上的防反射(AR)层,其中,所述AR层由碳氮化硅(SiCN)组成。
2.根据前述权利要求任一项所述的太阳能电池,其中,所述钝化层的厚度在1和100纳米之间。
3.根据前述权利要求任一项所述的太阳能电池,其中,所述钝化层的厚度在1和50纳米之间。
4.根据前述权利要求任一项所述的太阳能电池,其中,所述钝化层的厚度在2和30纳米之间。
5.根据前述权利要求任一项所述的太阳能电池,其中,所述AR层的厚度在1和200纳米之间。
6.根据前述权利要求任一项所述的太阳能电池,其中,所述AR层的厚度在20和120纳米之间。
7.根据前述权利要求任一项所述的太阳能电池,其中,所述AR层的厚度在40和100纳米之间。
8.根据前述权利要求任一项所述的太阳能电池,其中,由所述钝化层和所述AR层组成的介电堆的反射率处于1.5到2.4范围。
9.根据前述权利要求任一项所述的太阳能电池,其中,所述钝化层由所述SiON组成,并且其中所述SiON层中的氧与所述SiON层中的氧和氮之和的比处于0.01到0.99范围。
10.根据前述权利要求任一项所述的太阳能电池,其中,所述钝化层由所述SiON组成,并且其中所述SiON层中的氧与所述SiON层中的氧和氮之和的比处于0.1到0.9范围。
11.根据前述权利要求任一项所述的太阳能电池,其中,所述钝化层由所述SiON组成,并且其中所述SiON层中的氧与所述SiON层中的氧和氮之和的比处于0.4到0.9范围。
12.根据前述权利要求任一项所述的太阳能电池,其中,所述AR层被氢化。
13.根据前述权利要求任一项所述的太阳能电池,进一步包括形成在所述衬底的背面的第一金属电极和与所述第二导电类型的所述硅层接触的第二金属电极。
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PCT/US2010/002845 WO2011056201A2 (en) | 2009-10-27 | 2010-10-27 | Polarization resistant solar cell |
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CN111029436A (zh) * | 2019-10-14 | 2020-04-17 | 中建材浚鑫科技有限公司 | 可改善LeTID现象的P型单晶PERC电池及其制作方法 |
CN111029436B (zh) * | 2019-10-14 | 2021-09-21 | 中建材浚鑫科技有限公司 | 可改善LeTID现象的P型单晶PERC电池及其制作方法 |
CN112531074A (zh) * | 2020-11-20 | 2021-03-19 | 浙江爱旭太阳能科技有限公司 | 背面钝化太阳能电池及其制备方法 |
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EP2494607B1 (en) | 2015-07-01 |
US20110094574A1 (en) | 2011-04-28 |
CN102668103A (zh) | 2012-09-12 |
US20110094575A1 (en) | 2011-04-28 |
WO2011056201A3 (en) | 2011-08-11 |
TW201125136A (en) | 2011-07-16 |
JP2013508999A (ja) | 2013-03-07 |
EP2494606A2 (en) | 2012-09-05 |
TW201125137A (en) | 2011-07-16 |
JP2013508998A (ja) | 2013-03-07 |
KR20120087944A (ko) | 2012-08-07 |
KR20120087946A (ko) | 2012-08-07 |
US9166071B2 (en) | 2015-10-20 |
BR112012009877A2 (pt) | 2016-08-09 |
BR112012009883A2 (pt) | 2018-03-20 |
WO2011056200A3 (en) | 2011-08-11 |
WO2011056201A2 (en) | 2011-05-12 |
WO2011056200A2 (en) | 2011-05-12 |
EP2494607A2 (en) | 2012-09-05 |
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