JP2017504186A - 結晶シリコン太陽電池上のパッシベーションスタック - Google Patents

結晶シリコン太陽電池上のパッシベーションスタック Download PDF

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Publication number
JP2017504186A
JP2017504186A JP2016533099A JP2016533099A JP2017504186A JP 2017504186 A JP2017504186 A JP 2017504186A JP 2016533099 A JP2016533099 A JP 2016533099A JP 2016533099 A JP2016533099 A JP 2016533099A JP 2017504186 A JP2017504186 A JP 2017504186A
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Prior art keywords
layer
silicon
crystalline silicon
silicon oxynitride
solar cell
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Japanese (ja)
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JP2017504186A5 (enExample
Inventor
チュ，ジュンチー
チョウ，ス
ハウ，ハルバード
ステンスルード，マースティン，エリック
フォス，ショーン，エリック
ワン，ウェンジン
チョウ，チュンラン
Original Assignee
インスティテュート フォー エナジェテクニック
インスティテュート フォー エナジェテクニック
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Publication of JP2017504186A publication Critical patent/JP2017504186A/ja
Publication of JP2017504186A5 publication Critical patent/JP2017504186A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10P14/6504—
    • H10P14/6927—
    • H10P70/20—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Chemical Vapour Deposition (AREA)
  • Sustainable Energy (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2016533099A 2013-11-19 2014-11-19 結晶シリコン太陽電池上のパッシベーションスタック Pending JP2017504186A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NO20131549 2013-11-19
NO20131549A NO341687B1 (no) 2013-11-19 2013-11-19 Passiveringssabel på en solcelle av krystallinsk silisium
PCT/NO2014/050215 WO2015076678A1 (en) 2013-11-19 2014-11-19 Passivation stack on a crystalline silicon solar cell

Publications (2)

Publication Number Publication Date
JP2017504186A true JP2017504186A (ja) 2017-02-02
JP2017504186A5 JP2017504186A5 (enExample) 2018-07-12

Family

ID=50030409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016533099A Pending JP2017504186A (ja) 2013-11-19 2014-11-19 結晶シリコン太陽電池上のパッシベーションスタック

Country Status (7)

Country Link
US (1) US9660130B2 (enExample)
EP (1) EP3072165B1 (enExample)
JP (1) JP2017504186A (enExample)
CN (1) CN105745768B (enExample)
MY (1) MY173674A (enExample)
NO (1) NO341687B1 (enExample)
WO (1) WO2015076678A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022128577A (ja) * 2021-02-23 2022-09-02 ジョジアン ジンコ ソーラー カンパニー リミテッド 太陽電池およびその製造方法、太陽電池モジュール

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3059463B1 (fr) * 2016-11-30 2018-12-07 Commissariat A L'energie Atomique Et Aux Energies Alternatives Structure et procede de passivation.
KR101846444B1 (ko) 2017-01-13 2018-04-06 엘지전자 주식회사 태양 전지
KR102053912B1 (ko) * 2017-09-01 2019-12-09 주식회사 한화 계면 특성이 향상된 perc 솔라셀, 솔라셀 제조 방법 및 제조 장치
CN109950363A (zh) * 2019-03-29 2019-06-28 山西潞安太阳能科技有限责任公司 一种perc太阳能电池的背面钝化工艺
CN110854243B (zh) * 2019-12-31 2024-03-22 太仓市哲泰天产品设计有限公司 一种氮氧化硅perc背钝化方法及钝化炉
CN111416013A (zh) * 2020-05-02 2020-07-14 熵熠(上海)能源科技有限公司 一种以氢化非晶氮氧化硅薄膜为钝化层的异质结太阳电池
CN112382696B (zh) * 2020-10-15 2022-05-10 山西潞安太阳能科技有限责任公司 一种新型晶硅SiON双面电池背钝化工艺
CN116845115A (zh) 2021-09-06 2023-10-03 上海晶科绿能企业管理有限公司 太阳能电池及光伏组件
CN114883453B (zh) * 2022-06-17 2023-03-28 意诚新能(苏州)科技有限公司 一种双面多层钝化膜、制备方法及晶硅太阳能电池
CN117153897B (zh) * 2023-08-31 2025-04-11 环晟光伏(江苏)有限公司 一种切割边缘包含钝化层的太阳能电池及其制备方法
CN118073430A (zh) * 2024-01-12 2024-05-24 中科研和(宁波)科技有限公司 一种透明叠层钝化膜结构及其制备方法和应用
CN117832296B (zh) * 2024-01-16 2024-12-06 天合光能股份有限公司 太阳能电池及其制备方法
CN118198200B (zh) * 2024-05-14 2024-08-20 金阳(泉州)新能源科技有限公司 一种背接触电池的制作方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2185626A (en) * 1986-01-16 1987-07-22 Rca Corp Silicon oxynitride passivated semiconductor body and method of making same
EP1304748A2 (de) * 2001-10-19 2003-04-23 RWE Solar GmbH Verfahren zur Herstellung einer Solarzelle
JP2006140282A (ja) * 2004-11-11 2006-06-01 Sharp Corp 結晶シリコン太陽電池の製造方法
US20090056800A1 (en) * 2005-04-14 2009-03-05 Renewable Energy Corporation Asa Surface Passivation of Silicon Based Wafers
WO2010087320A1 (ja) * 2009-01-27 2010-08-05 株式会社 アルバック 太陽電池及び太陽電池の製造方法
JP2010238863A (ja) * 2009-03-31 2010-10-21 Fujifilm Corp 可撓性太陽電池モジュール
GB2471128A (en) * 2009-06-18 2010-12-22 Rec Solar As Surface passivation of silicon wafers
US20110284068A1 (en) * 2010-04-23 2011-11-24 Solexel, Inc. Passivation methods and apparatus for achieving ultra-low surface recombination velocities for high-efficiency solar cells
JP2012129533A (ja) * 2007-01-25 2012-07-05 Au Optronics Corp 太陽電池
JP2013128077A (ja) * 2011-12-19 2013-06-27 Sharp Corp 界面パッシベーション構造、裏面パッシベーション型太陽電池および界面パッシベーション構造の製造方法

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Publication number Priority date Publication date Assignee Title
DE102011086351A1 (de) * 2011-11-15 2013-05-16 International Solar Energy Research Center Konstanz E.V. Verfahren zur Herstellung einer Solarzelle mit PECVD-Kombinationsschicht und Solarzelle mit PECVD-Kombinationsschicht

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2185626A (en) * 1986-01-16 1987-07-22 Rca Corp Silicon oxynitride passivated semiconductor body and method of making same
EP1304748A2 (de) * 2001-10-19 2003-04-23 RWE Solar GmbH Verfahren zur Herstellung einer Solarzelle
JP2006140282A (ja) * 2004-11-11 2006-06-01 Sharp Corp 結晶シリコン太陽電池の製造方法
US20090056800A1 (en) * 2005-04-14 2009-03-05 Renewable Energy Corporation Asa Surface Passivation of Silicon Based Wafers
JP2012129533A (ja) * 2007-01-25 2012-07-05 Au Optronics Corp 太陽電池
WO2010087320A1 (ja) * 2009-01-27 2010-08-05 株式会社 アルバック 太陽電池及び太陽電池の製造方法
JP2010238863A (ja) * 2009-03-31 2010-10-21 Fujifilm Corp 可撓性太陽電池モジュール
GB2471128A (en) * 2009-06-18 2010-12-22 Rec Solar As Surface passivation of silicon wafers
US20110284068A1 (en) * 2010-04-23 2011-11-24 Solexel, Inc. Passivation methods and apparatus for achieving ultra-low surface recombination velocities for high-efficiency solar cells
JP2013128077A (ja) * 2011-12-19 2013-06-27 Sharp Corp 界面パッシベーション構造、裏面パッシベーション型太陽電池および界面パッシベーション構造の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022128577A (ja) * 2021-02-23 2022-09-02 ジョジアン ジンコ ソーラー カンパニー リミテッド 太陽電池およびその製造方法、太陽電池モジュール
US11605748B2 (en) 2021-02-23 2023-03-14 Zhejiang Jinko Solar Co., Ltd. Solar cell, method for producing same and solar module
US11749768B2 (en) 2021-02-23 2023-09-05 Zhejiang Jinko Solar Co., Ltd. Solar cell, method for producing same and solar module

Also Published As

Publication number Publication date
NO20131549A1 (no) 2015-05-20
CN105745768B (zh) 2017-11-24
EP3072165B1 (en) 2020-07-01
MY173674A (en) 2020-02-14
US20160276519A1 (en) 2016-09-22
US9660130B2 (en) 2017-05-23
CN105745768A (zh) 2016-07-06
WO2015076678A1 (en) 2015-05-28
EP3072165A4 (en) 2017-09-06
EP3072165A1 (en) 2016-09-28
NO341687B1 (no) 2017-12-18

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