MY114349A - Etching solution for etching porous silicon, etching method using the etching solution and method of prepa- ring semiconductor member using the etching solution - Google Patents

Etching solution for etching porous silicon, etching method using the etching solution and method of prepa- ring semiconductor member using the etching solution

Info

Publication number
MY114349A
MY114349A MYPI92000239A MYPI19920239A MY114349A MY 114349 A MY114349 A MY 114349A MY PI92000239 A MYPI92000239 A MY PI92000239A MY PI19920239 A MYPI19920239 A MY PI19920239A MY 114349 A MY114349 A MY 114349A
Authority
MY
Malaysia
Prior art keywords
etching
etching solution
porous silicon
solution
prepa
Prior art date
Application number
MYPI92000239A
Other languages
English (en)
Inventor
Sato Nobuhiko
Yonehara Takao
Sakaguchi Kiyofumi
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3148164A external-priority patent/JPH04346418A/ja
Priority claimed from JP3149297A external-priority patent/JPH04349621A/ja
Application filed by Canon Kk filed Critical Canon Kk
Publication of MY114349A publication Critical patent/MY114349A/en

Links

Classifications

    • H10P90/1922—
    • H10P50/642—
    • H10P90/15—
    • H10P90/1914—
    • H10W10/181—

Landscapes

  • Weting (AREA)
MYPI92000239A 1991-02-15 1992-02-14 Etching solution for etching porous silicon, etching method using the etching solution and method of prepa- ring semiconductor member using the etching solution MY114349A (en)

Applications Claiming Priority (49)

Application Number Priority Date Filing Date Title
JP4221391 1991-02-15
JP4221291 1991-02-15
JP5560691 1991-02-28
JP5560591 1991-02-28
JP5560191 1991-02-28
JP5560391 1991-02-28
JP5561491 1991-02-28
JP5561391 1991-02-28
JP5560291 1991-02-28
JP5561091 1991-02-28
JP5561191 1991-02-28
JP5560991 1991-02-28
JP5560891 1991-02-28
JP5560491 1991-02-28
JP5560791 1991-02-28
JP5561291 1991-02-28
JP8575591 1991-03-27
JP14816191 1991-05-24
JP14816391 1991-05-24
JP14816091 1991-05-24
JP3148164A JPH04346418A (ja) 1991-05-24 1991-05-24 半導体基材の作製方法
JP14930191 1991-05-27
JP14930291 1991-05-27
JP14929991 1991-05-27
JP14931191 1991-05-27
JP14930091 1991-05-27
JP3149297A JPH04349621A (ja) 1991-05-27 1991-05-27 半導体基材の作製方法
JP14930991 1991-05-27
JP14929891 1991-05-27
JP14930691 1991-05-27
JP14931091 1991-05-27
JP14930891 1991-05-27
JP14930791 1991-05-27
JP15098591 1991-05-28
JP15098191 1991-05-28
JP15099491 1991-05-28
JP15099191 1991-05-28
JP15098391 1991-05-28
JP15098991 1991-05-28
JP15099291 1991-05-28
JP15099091 1991-05-28
JP15098491 1991-05-28
JP15098291 1991-05-28
JP15098091 1991-05-28
JP15099391 1991-05-28
JP15224891 1991-05-29
JP15225191 1991-05-29
JP15225091 1991-05-29
JP15224991 1991-05-29

Publications (1)

Publication Number Publication Date
MY114349A true MY114349A (en) 2002-10-31

Family

ID=27586982

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI92000239A MY114349A (en) 1991-02-15 1992-02-14 Etching solution for etching porous silicon, etching method using the etching solution and method of prepa- ring semiconductor member using the etching solution

Country Status (8)

Country Link
US (1) US5767020A (enExample)
EP (2) EP1347505A3 (enExample)
KR (1) KR960007640B1 (enExample)
CN (1) CN1099905A (enExample)
AT (1) ATE244931T1 (enExample)
CA (1) CA2061264C (enExample)
MY (1) MY114349A (enExample)
SG (2) SG47089A1 (enExample)

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TW211621B (enExample) * 1991-07-31 1993-08-21 Canon Kk
DE69232347T2 (de) * 1991-09-27 2002-07-11 Canon K.K., Tokio/Tokyo Verfahren zur Behandlung eines Substrats aus Silizium
JP3112106B2 (ja) * 1991-10-11 2000-11-27 キヤノン株式会社 半導体基材の作製方法
EP0536790B1 (en) * 1991-10-11 2004-03-03 Canon Kabushiki Kaisha Method for producing semiconductor articles
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JP3416163B2 (ja) * 1992-01-31 2003-06-16 キヤノン株式会社 半導体基板及びその作製方法
TW330313B (en) * 1993-12-28 1998-04-21 Canon Kk A semiconductor substrate and process for producing same
US7148119B1 (en) 1994-03-10 2006-12-12 Canon Kabushiki Kaisha Process for production of semiconductor substrate
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CA2182442C (en) * 1995-08-02 2000-10-24 Kiyofumi Sakaguchi Semiconductor substrate and fabrication method for the same
EP0926709A3 (en) * 1997-12-26 2000-08-30 Canon Kabushiki Kaisha Method of manufacturing an SOI structure
JP3218564B2 (ja) 1998-01-14 2001-10-15 キヤノン株式会社 多孔質領域の除去方法及び半導体基体の製造方法
TW405234B (en) * 1998-05-18 2000-09-11 United Microelectronics Corp Method for manufacturing a polysilicon fuse and the structure of the same
US6376859B1 (en) 1998-07-29 2002-04-23 Texas Instruments Incorporated Variable porosity porous silicon isolation
US6410436B2 (en) 1999-03-26 2002-06-25 Canon Kabushiki Kaisha Method of cleaning porous body, and process for producing porous body, non-porous film or bonded substrate
US6680900B1 (en) * 1999-06-04 2004-01-20 Ricoh Company, Ltd. Optical-pickup slider, manufacturing method thereof, probe and manufacturing method thereof, and probe array and manufacturing method thereof
DE19935446A1 (de) * 1999-07-28 2001-02-01 Merck Patent Gmbh Ätzlösung, Flußsäure enthaltend
US6653209B1 (en) 1999-09-30 2003-11-25 Canon Kabushiki Kaisha Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device
US6790785B1 (en) 2000-09-15 2004-09-14 The Board Of Trustees Of The University Of Illinois Metal-assisted chemical etch porous silicon formation method
WO2002103752A2 (en) 2000-11-27 2002-12-27 The Board Of Trustees Of The University Of Illinois Metal-assisted chemical etch to produce porous group iii-v materials
US20030134486A1 (en) * 2002-01-16 2003-07-17 Zhongze Wang Semiconductor-on-insulator comprising integrated circuitry
JP2004228150A (ja) * 2003-01-20 2004-08-12 Canon Inc エッチング方法
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US7244659B2 (en) 2005-03-10 2007-07-17 Micron Technology, Inc. Integrated circuits and methods of forming a field effect transistor
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US7557002B2 (en) * 2006-08-18 2009-07-07 Micron Technology, Inc. Methods of forming transistor devices
WO2008045301A1 (en) * 2006-10-05 2008-04-17 Hitachi Chemical Co., Ltd. Well-aligned, high aspect-ratio, high-density silicon nanowires and methods of making the same
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CN102037560B (zh) * 2008-03-21 2012-09-26 Rise技术有限责任公司 通过将多孔硅转变成多孔金属或陶瓷来制作微结构的方法
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US10205080B2 (en) 2012-01-17 2019-02-12 Matrix Industries, Inc. Systems and methods for forming thermoelectric devices
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Also Published As

Publication number Publication date
CA2061264C (en) 1999-11-16
EP1347505A2 (en) 2003-09-24
EP0499488B9 (en) 2004-01-28
US5767020A (en) 1998-06-16
ATE244931T1 (de) 2003-07-15
EP1347505A3 (en) 2004-10-20
SG47089A1 (en) 1998-03-20
EP0499488A3 (enExample) 1995-03-01
SG93197A1 (en) 2002-12-17
EP0499488B1 (en) 2003-07-09
CN1099905A (zh) 1995-03-08
EP0499488A2 (en) 1992-08-19
KR960007640B1 (en) 1996-06-07
CA2061264A1 (en) 1992-08-16

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