MX9702916A - Estructura de capas multiples para fabricar un electrodo ohmico y electrodo ohmico. - Google Patents

Estructura de capas multiples para fabricar un electrodo ohmico y electrodo ohmico.

Info

Publication number
MX9702916A
MX9702916A MX9702916A MX9702916A MX9702916A MX 9702916 A MX9702916 A MX 9702916A MX 9702916 A MX9702916 A MX 9702916A MX 9702916 A MX9702916 A MX 9702916A MX 9702916 A MX9702916 A MX 9702916A
Authority
MX
Mexico
Prior art keywords
ohmic electrode
laminate
forming
iii
degree
Prior art date
Application number
MX9702916A
Other languages
English (en)
Other versions
MXPA97002916A (es
Inventor
Mitsuhiro Nakamura
Masaru Wada
Chihiro Uchibori
Masanori Murakami
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of MX9702916A publication Critical patent/MX9702916A/es
Publication of MXPA97002916A publication Critical patent/MXPA97002916A/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Laminated Bodies (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)

Abstract

Se presenta una estructura de capas multiples para fabricar un electrodoohmico para semiconductores de compuestos III-V tales como semiconductores GaAs que tiene características prácticamente satisfactorias y un electrodo ohmico obtenido mediante el uso de tal estructura. En un sustrato semiconductor de compuestos III-V como, por ejemplo, un sustrato GaAs de tipo A+, se aplican secuencialmente mediante deposito electronico una capa semiconductora de cristal no unico como por ejemplo una capa de InO.7GaO.3As de cristal no unico, una película metálica como por ejemplo una película de N1, una película de nitruro metálico como por ejemplo una película WN y una película de metal refractario como por ejemplo una película W, etc., y se forma subsecuentemente en patrones mediante desprendimiento, etc., para elaborar una estructura de capas multiples para fabricar electrodos ohmicos. La estructura se templa a una temperatura comprendida entre 500 degree C y 600 degree C, por ejemplo 550 degree C durante un segundo mediante, por ejemplo, el método RTA para fabricar un electrodo ohmico.
MXPA/A/1997/002916A 1995-08-24 1997-04-22 Estructura de capas multiples para fabricar un electrodo ohmico y electrodo ohmico MXPA97002916A (es)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP7-239120 1995-08-24
JP23912095 1995-08-24
JP239120/1995 1995-08-24
PCT/JP1996/002318 WO1997008744A1 (fr) 1995-08-24 1996-08-20 Lamine permettant de former une electrode ohmique et electrode ohmique

Publications (2)

Publication Number Publication Date
MX9702916A true MX9702916A (es) 1997-09-30
MXPA97002916A MXPA97002916A (es) 1998-07-03

Family

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Also Published As

Publication number Publication date
CN1107339C (zh) 2003-04-30
CA2203557A1 (en) 1997-03-06
AU6709996A (en) 1997-03-19
EP0789387A1 (en) 1997-08-13
WO1997008744A1 (fr) 1997-03-06
ES2165515T3 (es) 2002-03-16
EP0789387A4 (es) 1997-09-03
KR970707572A (ko) 1997-12-01
TW307926B (es) 1997-06-11
BR9606606A (pt) 1997-09-16
EP0789387B1 (en) 2001-11-21
US20040238891A1 (en) 2004-12-02
CN1165583A (zh) 1997-11-19
MY118640A (en) 2004-12-31
DE69617192T2 (de) 2002-07-18
ATE209394T1 (de) 2001-12-15
JP4048284B2 (ja) 2008-02-20
DE69617192D1 (de) 2002-01-03

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