JPS5529182A - Production of gaas schottky diode - Google Patents

Production of gaas schottky diode

Info

Publication number
JPS5529182A
JPS5529182A JP10325478A JP10325478A JPS5529182A JP S5529182 A JPS5529182 A JP S5529182A JP 10325478 A JP10325478 A JP 10325478A JP 10325478 A JP10325478 A JP 10325478A JP S5529182 A JPS5529182 A JP S5529182A
Authority
JP
Japan
Prior art keywords
layer
metal
metal layer
coverd
whole surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10325478A
Other languages
Japanese (ja)
Inventor
Haruo Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10325478A priority Critical patent/JPS5529182A/en
Publication of JPS5529182A publication Critical patent/JPS5529182A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To provide an element having a large junction capacity and good characteristics by providing an under-lying metal layer made up of at least one of Nb, V and Ta, and intermediate metal layer of Mo or W, and a schottky electrode comprising an Au layer on a GaAs substrate.
CONSTITUTION: An n-type GaAs layer 1 is epitaxially grown on a n+-type GaAs substrate and it is etched in such a manner that it is slightly thicker than that to form a desired punch slew. Then the whole surface is coverd with a Schottky barrier forming metal such as V, Nb and Ta as an underlying metal layer 2 and it is cut to a deslred shape and dimension, and then the thus formed whole surface is coverd with an insulating film 3. Thereafter the surface of the layer 2 formed in the desired shape is exposed and provided with a first intermediate layer 41 made up of the same metal as used in the layer, a second intermediate metal layer 42 of Mo or W, and an Au layer 5. These layers are left only on the layer 2 and removed by etching on the other areas. After so arranging, an ohm metal electrode layer 6 is vapor-deposited on the back of the substrate and heat-treated to stabilize the Schottky barrier.
COPYRIGHT: (C)1980,JPO&Japio
JP10325478A 1978-08-24 1978-08-24 Production of gaas schottky diode Pending JPS5529182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10325478A JPS5529182A (en) 1978-08-24 1978-08-24 Production of gaas schottky diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10325478A JPS5529182A (en) 1978-08-24 1978-08-24 Production of gaas schottky diode

Publications (1)

Publication Number Publication Date
JPS5529182A true JPS5529182A (en) 1980-03-01

Family

ID=14349298

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10325478A Pending JPS5529182A (en) 1978-08-24 1978-08-24 Production of gaas schottky diode

Country Status (1)

Country Link
JP (1) JPS5529182A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59160584U (en) * 1983-04-12 1984-10-27 ヨネダ靴下株式会社 seamless panty pants
JPS6039865A (en) * 1983-08-12 1985-03-01 Nippon Telegr & Teleph Corp <Ntt> Electrode for semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59160584U (en) * 1983-04-12 1984-10-27 ヨネダ靴下株式会社 seamless panty pants
JPS6039865A (en) * 1983-08-12 1985-03-01 Nippon Telegr & Teleph Corp <Ntt> Electrode for semiconductor device
JPH0220150B2 (en) * 1983-08-12 1990-05-08 Nippon Telegraph & Telephone

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