MX360116B - Método para proporcionar pulsos de energía secuenciales. - Google Patents
Método para proporcionar pulsos de energía secuenciales.Info
- Publication number
- MX360116B MX360116B MX2014005134A MX2014005134A MX360116B MX 360116 B MX360116 B MX 360116B MX 2014005134 A MX2014005134 A MX 2014005134A MX 2014005134 A MX2014005134 A MX 2014005134A MX 360116 B MX360116 B MX 360116B
- Authority
- MX
- Mexico
- Prior art keywords
- power
- power pulses
- sequential power
- providing
- providing sequential
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/012—Modifications of generator to improve response time or to decrease power consumption
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/3467—Pulsed operation, e.g. HIPIMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Measuring Volume Flow (AREA)
- Fluidized-Bed Combustion And Resonant Combustion (AREA)
- Plasma Technology (AREA)
- Electrostatic Separation (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
La presente invención se refiere a un método para proporcionar pulsos de energía para cátodos de deposición electrónica PVD que comprende un componente de consumo de energía y un elemento de cátodo, en donde durante un intervalo de incremento de energía para un generador disminuye la energía en el componente de consumo de energía y después disminuye la energía en el elemento de cátodo, con el cambio que se efectúa de manera que la extracción de energía del generador que proporciona la energía no tiene que ser interrumpida.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102011117177A DE102011117177A1 (de) | 2011-10-28 | 2011-10-28 | Verfahren zur Bereitstellung sequenzieller Leistungspulse |
| PCT/EP2012/004203 WO2013060415A1 (de) | 2011-10-28 | 2012-10-08 | Verfahren zur bereitstellung sequenzieller leistungspulse |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MX2014005134A MX2014005134A (es) | 2014-10-06 |
| MX360116B true MX360116B (es) | 2018-10-23 |
Family
ID=47177865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MX2014005134A MX360116B (es) | 2011-10-28 | 2012-10-08 | Método para proporcionar pulsos de energía secuenciales. |
Country Status (23)
| Country | Link |
|---|---|
| US (1) | US9906210B2 (es) |
| EP (1) | EP2771901B1 (es) |
| JP (1) | JP6236651B2 (es) |
| KR (1) | KR101930579B1 (es) |
| CN (1) | CN104246967B (es) |
| AR (1) | AR088318A1 (es) |
| BR (1) | BR112014010115B1 (es) |
| CA (1) | CA2853699C (es) |
| DE (1) | DE102011117177A1 (es) |
| DK (1) | DK2771901T3 (es) |
| ES (1) | ES2705974T3 (es) |
| HU (1) | HUE043149T2 (es) |
| IN (1) | IN2014DN03385A (es) |
| MX (1) | MX360116B (es) |
| MY (1) | MY175563A (es) |
| PL (1) | PL2771901T3 (es) |
| PT (1) | PT2771901T (es) |
| RU (1) | RU2631670C2 (es) |
| SG (1) | SG11201401877QA (es) |
| SI (1) | SI2771901T1 (es) |
| TR (1) | TR201900589T4 (es) |
| TW (1) | TWI564415B (es) |
| WO (1) | WO2013060415A1 (es) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102011121770A1 (de) | 2011-12-21 | 2013-06-27 | Oerlikon Trading Ag, Trübbach | Homogenes HIPIMS-Beschichtungsverfahren |
| DE102013011071A1 (de) | 2013-07-03 | 2015-01-08 | Oerlikon Trading Ag, Trübbach | TixSi1-xN Schichten mit CryAl1-yN Haftschicht und ihre Herstellung |
| DE102013011075A1 (de) * | 2013-07-03 | 2015-01-08 | Oerlikon Trading Ag | TiB2 Schichten und ihre Herstellung |
| DE102013011073A1 (de) | 2013-07-03 | 2015-01-08 | Oerlikon Trading Ag, Trübbach | TlxSi1-xN Schichten und ihre Herstellung |
| PL3017079T5 (pl) † | 2013-07-03 | 2020-12-28 | Oerlikon Surface Solutions Ag, Pfäffikon | Sposób wytwarzania warstw tixsi1-xn |
| DE102013011072A1 (de) | 2013-07-03 | 2015-01-08 | Oerlikon Trading Ag, Trübbach | Targetpräparation |
| KR102117739B1 (ko) | 2016-09-30 | 2020-06-09 | 주식회사 엘지화학 | 음극지지체형 고체산화물 연료전지 제조방법 |
| EP3406751A1 (en) | 2017-05-24 | 2018-11-28 | Walter Ag | A coated cutting tool and a method for its production |
| EP3406761A1 (en) | 2017-05-24 | 2018-11-28 | Walter Ag | A method for producing a coated cutting tool and a coated cutting tool |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6141766A (ja) * | 1984-08-06 | 1986-02-28 | Hitachi Ltd | スパツタリング方法およびスパツタ−装置 |
| JPH07116596B2 (ja) * | 1989-02-15 | 1995-12-13 | 株式会社日立製作所 | 薄膜形成方法、及びその装置 |
| ES2202439T3 (es) * | 1995-04-25 | 2004-04-01 | Von Ardenne Anlagentechnik Gmbh | Sistema de pulverizacion que utiliza un magnetron cilindrico rotativo alimentado electricamente utilizando corriente alterna. |
| DE19651615C1 (de) * | 1996-12-12 | 1997-07-10 | Fraunhofer Ges Forschung | Verfahren zum Aufbringen von Kohlenstoffschichten durch reaktives Magnetron-Sputtern |
| US6063254A (en) * | 1997-04-30 | 2000-05-16 | The Alta Group, Inc. | Method for producing titanium crystal and titanium |
| US6878242B2 (en) * | 2003-04-08 | 2005-04-12 | Guardian Industries Corp. | Segmented sputtering target and method/apparatus for using same |
| US20050103620A1 (en) * | 2003-11-19 | 2005-05-19 | Zond, Inc. | Plasma source with segmented magnetron cathode |
| WO2007042394A1 (en) * | 2005-10-13 | 2007-04-19 | Nv Bekaert Sa | A method to deposit a coating by sputtering |
| DE102006017382A1 (de) | 2005-11-14 | 2007-05-16 | Itg Induktionsanlagen Gmbh | Verfahren und Vorrichtung zum Beschichten und/oder zur Behandlung von Oberflächen |
| EP2102889B1 (en) | 2006-12-12 | 2020-10-07 | Evatec AG | Rf substrate bias with high power impulse magnetron sputtering (hipims) |
| US20080197015A1 (en) * | 2007-02-16 | 2008-08-21 | Terry Bluck | Multiple-magnetron sputtering source with plasma confinement |
| EP2272080B1 (de) * | 2008-04-28 | 2012-08-01 | CemeCon AG | Vorrichtung und verfahren zum vorbehandeln und beschichten von körpern |
| JP5037475B2 (ja) * | 2008-11-11 | 2012-09-26 | 株式会社神戸製鋼所 | スパッタ装置 |
| DE202010001497U1 (de) | 2010-01-29 | 2010-04-22 | Hauzer Techno-Coating B.V. | Beschichtungsvorrichtung mit einer HIPIMS-Leistungsquelle |
| DE102011018363A1 (de) | 2011-04-20 | 2012-10-25 | Oerlikon Trading Ag, Trübbach | Hochleistungszerstäubungsquelle |
| DE102011121770A1 (de) * | 2011-12-21 | 2013-06-27 | Oerlikon Trading Ag, Trübbach | Homogenes HIPIMS-Beschichtungsverfahren |
| JP7116596B2 (ja) * | 2018-05-31 | 2022-08-10 | 川崎重工業株式会社 | リード線挿入装置およびリード線挿入方法 |
-
2011
- 2011-10-28 DE DE102011117177A patent/DE102011117177A1/de not_active Withdrawn
-
2012
- 2012-10-08 JP JP2014537511A patent/JP6236651B2/ja active Active
- 2012-10-08 EP EP12784435.5A patent/EP2771901B1/de active Active
- 2012-10-08 IN IN3385DEN2014 patent/IN2014DN03385A/en unknown
- 2012-10-08 CA CA2853699A patent/CA2853699C/en active Active
- 2012-10-08 HU HUE12784435A patent/HUE043149T2/hu unknown
- 2012-10-08 PL PL12784435T patent/PL2771901T3/pl unknown
- 2012-10-08 PT PT12784435T patent/PT2771901T/pt unknown
- 2012-10-08 TR TR2019/00589T patent/TR201900589T4/tr unknown
- 2012-10-08 DK DK12784435.5T patent/DK2771901T3/en active
- 2012-10-08 MX MX2014005134A patent/MX360116B/es active IP Right Grant
- 2012-10-08 MY MYPI2014001218A patent/MY175563A/en unknown
- 2012-10-08 ES ES12784435T patent/ES2705974T3/es active Active
- 2012-10-08 SG SG11201401877QA patent/SG11201401877QA/en unknown
- 2012-10-08 CN CN201280065357.7A patent/CN104246967B/zh active Active
- 2012-10-08 RU RU2014121388A patent/RU2631670C2/ru active
- 2012-10-08 KR KR1020147014022A patent/KR101930579B1/ko active IP Right Grant
- 2012-10-08 SI SI201231499T patent/SI2771901T1/sl unknown
- 2012-10-08 WO PCT/EP2012/004203 patent/WO2013060415A1/de active Application Filing
- 2012-10-08 US US14/354,698 patent/US9906210B2/en active Active
- 2012-10-08 BR BR112014010115-9A patent/BR112014010115B1/pt active IP Right Grant
- 2012-10-12 AR ARP120103800A patent/AR088318A1/es active IP Right Grant
- 2012-10-26 TW TW101139611A patent/TWI564415B/zh not_active IP Right Cessation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| HC | Change of company name or juridical status |
Owner name: DELPHI TECHNOLOGIES INC. |
|
| FG | Grant or registration |