AR088318A1 - Procedimiento para la puesta a disposicion de pulsaciones de potencia secuenciales - Google Patents
Procedimiento para la puesta a disposicion de pulsaciones de potencia secuencialesInfo
- Publication number
- AR088318A1 AR088318A1 ARP120103800A ARP120103800A AR088318A1 AR 088318 A1 AR088318 A1 AR 088318A1 AR P120103800 A ARP120103800 A AR P120103800A AR P120103800 A ARP120103800 A AR P120103800A AR 088318 A1 AR088318 A1 AR 088318A1
- Authority
- AR
- Argentina
- Prior art keywords
- power
- generator
- cathode
- interval
- connection
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/012—Modifications of generator to improve response time or to decrease power consumption
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/3467—Pulsed operation, e.g. HIPIMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Measuring Volume Flow (AREA)
- Fluidized-Bed Combustion And Resonant Combustion (AREA)
- Electrostatic Separation (AREA)
- Plasma Technology (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
La presente se refiere a un procedimiento para la puesta a disposición de pulsaciones de potencia para cátodos de pulverización de PVD que abarca una parte constructiva que absorbe la potencia y un cátodo parcial, en donde durante un intervalo de acumulación de la potencia de un generador se disminuye la potencia en la parte constructiva que absorbe la potencia y seguidamente se disminuye la potencia en el cátodo parcial, con lo que se conmuta de manera tal que no es necesario interrumpir la toma de potencia desde el generador que pone a disposición la potencia. El procedimiento comprende las etapas de: a) puesta a disposición de un generador con entrega constante de potencia prefijada, por lo menos después de la conexión y después de trascurrido un intervalo de acumulación de potencia; b) conexión del generador; c) conexión de la parte constructiva que absorbe la potencia, al generador; d) separación del generador con respecto a la parte constructiva después de trascurrido el intervalo de acumulación de la potencia; e) conexión del primer cátodo parcial al generador; y f) separación del generador con respecto al primer cátodo después de transcurrido un primer intervalo de pulsaciones de potencia prefijado correspondiente al primer cátodo parcial; en donde las etapas d) y e) se llevan a cabo de manera que al conectarse el primer cátodo al generador no se presenta un segundo intervalo de acumulación de potencia, siendo preferible que el mismo se logre por el hecho de que el intervalo de acumulación de la potencia y el primer intervalo de potencia se superpongan en el tiempo y no sea necesario interrumpir la entrega o salida de la potencia del generador.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011117177A DE102011117177A1 (de) | 2011-10-28 | 2011-10-28 | Verfahren zur Bereitstellung sequenzieller Leistungspulse |
Publications (1)
Publication Number | Publication Date |
---|---|
AR088318A1 true AR088318A1 (es) | 2014-05-28 |
Family
ID=47177865
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ARP120103800A AR088318A1 (es) | 2011-10-28 | 2012-10-12 | Procedimiento para la puesta a disposicion de pulsaciones de potencia secuenciales |
Country Status (23)
Country | Link |
---|---|
US (1) | US9906210B2 (es) |
EP (1) | EP2771901B1 (es) |
JP (1) | JP6236651B2 (es) |
KR (1) | KR101930579B1 (es) |
CN (1) | CN104246967B (es) |
AR (1) | AR088318A1 (es) |
BR (1) | BR112014010115B1 (es) |
CA (1) | CA2853699C (es) |
DE (1) | DE102011117177A1 (es) |
DK (1) | DK2771901T3 (es) |
ES (1) | ES2705974T3 (es) |
HU (1) | HUE043149T2 (es) |
IN (1) | IN2014DN03385A (es) |
MX (1) | MX360116B (es) |
MY (1) | MY175563A (es) |
PL (1) | PL2771901T3 (es) |
PT (1) | PT2771901T (es) |
RU (1) | RU2631670C2 (es) |
SG (1) | SG11201401877QA (es) |
SI (1) | SI2771901T1 (es) |
TR (1) | TR201900589T4 (es) |
TW (1) | TWI564415B (es) |
WO (1) | WO2013060415A1 (es) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011121770A1 (de) * | 2011-12-21 | 2013-06-27 | Oerlikon Trading Ag, Trübbach | Homogenes HIPIMS-Beschichtungsverfahren |
DE102013011071A1 (de) | 2013-07-03 | 2015-01-08 | Oerlikon Trading Ag, Trübbach | TixSi1-xN Schichten mit CryAl1-yN Haftschicht und ihre Herstellung |
DE102013011072A1 (de) * | 2013-07-03 | 2015-01-08 | Oerlikon Trading Ag, Trübbach | Targetpräparation |
DE102013011073A1 (de) | 2013-07-03 | 2015-01-08 | Oerlikon Trading Ag, Trübbach | TlxSi1-xN Schichten und ihre Herstellung |
DE102013011075A1 (de) | 2013-07-03 | 2015-01-08 | Oerlikon Trading Ag | TiB2 Schichten und ihre Herstellung |
PT3017079T (pt) | 2013-07-03 | 2017-07-19 | Oerlikon Surface Solutions Ag Pfäffikon | Processo de produção de camadas de tixsi1-xn |
KR102117739B1 (ko) | 2016-09-30 | 2020-06-09 | 주식회사 엘지화학 | 음극지지체형 고체산화물 연료전지 제조방법 |
EP3406751A1 (en) | 2017-05-24 | 2018-11-28 | Walter Ag | A coated cutting tool and a method for its production |
EP3406761A1 (en) | 2017-05-24 | 2018-11-28 | Walter Ag | A method for producing a coated cutting tool and a coated cutting tool |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6141766A (ja) * | 1984-08-06 | 1986-02-28 | Hitachi Ltd | スパツタリング方法およびスパツタ−装置 |
JPH07116596B2 (ja) * | 1989-02-15 | 1995-12-13 | 株式会社日立製作所 | 薄膜形成方法、及びその装置 |
CA2218279A1 (en) * | 1995-04-25 | 1996-10-31 | The Boc Group, Inc. | Sputtering system using cylindrical rotating magnetron electrically powered using alternating current |
DE19651615C1 (de) * | 1996-12-12 | 1997-07-10 | Fraunhofer Ges Forschung | Verfahren zum Aufbringen von Kohlenstoffschichten durch reaktives Magnetron-Sputtern |
US6063254A (en) * | 1997-04-30 | 2000-05-16 | The Alta Group, Inc. | Method for producing titanium crystal and titanium |
US6878242B2 (en) * | 2003-04-08 | 2005-04-12 | Guardian Industries Corp. | Segmented sputtering target and method/apparatus for using same |
US20050103620A1 (en) * | 2003-11-19 | 2005-05-19 | Zond, Inc. | Plasma source with segmented magnetron cathode |
KR20080071973A (ko) * | 2005-10-13 | 2008-08-05 | 엔.브이. 베카에르트 에스.에이. | 스퍼터링에 의한 코팅 증착법 |
DE102006017382A1 (de) * | 2005-11-14 | 2007-05-16 | Itg Induktionsanlagen Gmbh | Verfahren und Vorrichtung zum Beschichten und/oder zur Behandlung von Oberflächen |
EP2102889B1 (en) | 2006-12-12 | 2020-10-07 | Evatec AG | Rf substrate bias with high power impulse magnetron sputtering (hipims) |
US20080197015A1 (en) * | 2007-02-16 | 2008-08-21 | Terry Bluck | Multiple-magnetron sputtering source with plasma confinement |
US9812299B2 (en) * | 2008-04-28 | 2017-11-07 | Cemecon Ag | Apparatus and method for pretreating and coating bodies |
JP5037475B2 (ja) * | 2008-11-11 | 2012-09-26 | 株式会社神戸製鋼所 | スパッタ装置 |
DE202010001497U1 (de) | 2010-01-29 | 2010-04-22 | Hauzer Techno-Coating B.V. | Beschichtungsvorrichtung mit einer HIPIMS-Leistungsquelle |
DE102011018363A1 (de) | 2011-04-20 | 2012-10-25 | Oerlikon Trading Ag, Trübbach | Hochleistungszerstäubungsquelle |
DE102011121770A1 (de) * | 2011-12-21 | 2013-06-27 | Oerlikon Trading Ag, Trübbach | Homogenes HIPIMS-Beschichtungsverfahren |
JP7116596B2 (ja) * | 2018-05-31 | 2022-08-10 | 川崎重工業株式会社 | リード線挿入装置およびリード線挿入方法 |
-
2011
- 2011-10-28 DE DE102011117177A patent/DE102011117177A1/de not_active Withdrawn
-
2012
- 2012-10-08 WO PCT/EP2012/004203 patent/WO2013060415A1/de active Application Filing
- 2012-10-08 BR BR112014010115-9A patent/BR112014010115B1/pt active IP Right Grant
- 2012-10-08 CN CN201280065357.7A patent/CN104246967B/zh active Active
- 2012-10-08 SI SI201231499T patent/SI2771901T1/sl unknown
- 2012-10-08 MY MYPI2014001218A patent/MY175563A/en unknown
- 2012-10-08 CA CA2853699A patent/CA2853699C/en active Active
- 2012-10-08 US US14/354,698 patent/US9906210B2/en active Active
- 2012-10-08 KR KR1020147014022A patent/KR101930579B1/ko active IP Right Grant
- 2012-10-08 PT PT12784435T patent/PT2771901T/pt unknown
- 2012-10-08 ES ES12784435T patent/ES2705974T3/es active Active
- 2012-10-08 RU RU2014121388A patent/RU2631670C2/ru active
- 2012-10-08 JP JP2014537511A patent/JP6236651B2/ja active Active
- 2012-10-08 DK DK12784435.5T patent/DK2771901T3/en active
- 2012-10-08 TR TR2019/00589T patent/TR201900589T4/tr unknown
- 2012-10-08 IN IN3385DEN2014 patent/IN2014DN03385A/en unknown
- 2012-10-08 SG SG11201401877QA patent/SG11201401877QA/en unknown
- 2012-10-08 EP EP12784435.5A patent/EP2771901B1/de active Active
- 2012-10-08 PL PL12784435T patent/PL2771901T3/pl unknown
- 2012-10-08 HU HUE12784435A patent/HUE043149T2/hu unknown
- 2012-10-08 MX MX2014005134A patent/MX360116B/es active IP Right Grant
- 2012-10-12 AR ARP120103800A patent/AR088318A1/es active IP Right Grant
- 2012-10-26 TW TW101139611A patent/TWI564415B/zh not_active IP Right Cessation
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Legal Events
Date | Code | Title | Description |
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FG | Grant, registration |