MX2013012198A - Metodo para proporcionar impulsos de potencia secuenciales. - Google Patents

Metodo para proporcionar impulsos de potencia secuenciales.

Info

Publication number
MX2013012198A
MX2013012198A MX2013012198A MX2013012198A MX2013012198A MX 2013012198 A MX2013012198 A MX 2013012198A MX 2013012198 A MX2013012198 A MX 2013012198A MX 2013012198 A MX2013012198 A MX 2013012198A MX 2013012198 A MX2013012198 A MX 2013012198A
Authority
MX
Mexico
Prior art keywords
sequential power
power impulses
supplying
cathodes
supplying sequential
Prior art date
Application number
MX2013012198A
Other languages
English (en)
Other versions
MX346377B (es
Inventor
Markus Lechthaler
Siegfried Krassnitzer
Daniel Lendi
Kurt Ruhm
Original Assignee
Oerlikon Trading Ag Trübbach
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102011018363A external-priority patent/DE102011018363A1/de
Priority claimed from DE102011117177A external-priority patent/DE102011117177A1/de
Application filed by Oerlikon Trading Ag Trübbach filed Critical Oerlikon Trading Ag Trübbach
Publication of MX2013012198A publication Critical patent/MX2013012198A/es
Publication of MX346377B publication Critical patent/MX346377B/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Surgical Instruments (AREA)
  • Electrostatic Separation (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La invención se relaciona con un método para suministrar los impulsos de potencia para los cátodos de pulverización catódica de PVD subdivididos en cátodos parciales. En dicho método, los intervalos del impulso de potencia que actúan en los cátodos parciales se seleccionan de tal manera que estén superpuestos, en consecuencia se proporcionan con la necesidad de interrumpir la extracción de potencia suministrada por el generador.
MX2013012198A 2011-04-20 2012-04-04 Método para proporcionar impulsos de potencia secuenciales. MX346377B (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102011018363A DE102011018363A1 (de) 2011-04-20 2011-04-20 Hochleistungszerstäubungsquelle
DE102011117177A DE102011117177A1 (de) 2011-10-28 2011-10-28 Verfahren zur Bereitstellung sequenzieller Leistungspulse
PCT/EP2012/001484 WO2012143091A1 (de) 2011-04-20 2012-04-04 Verfahren zur bereistellung sequenzieller leistungspulse

Publications (2)

Publication Number Publication Date
MX2013012198A true MX2013012198A (es) 2014-05-28
MX346377B MX346377B (es) 2017-03-16

Family

ID=46052693

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2013012198A MX346377B (es) 2011-04-20 2012-04-04 Método para proporcionar impulsos de potencia secuenciales.

Country Status (18)

Country Link
US (1) US9267200B2 (es)
EP (1) EP2700083B1 (es)
JP (1) JP5713331B2 (es)
KR (1) KR101537883B1 (es)
CN (1) CN103608893B (es)
AR (1) AR086194A1 (es)
BR (1) BR112013026962B1 (es)
CA (1) CA2833796C (es)
ES (1) ES2543053T3 (es)
HU (1) HUE025643T2 (es)
MX (1) MX346377B (es)
MY (1) MY183993A (es)
PL (1) PL2700083T3 (es)
PT (1) PT2700083E (es)
RU (1) RU2596818C2 (es)
SG (1) SG194568A1 (es)
TW (1) TWI586825B (es)
WO (1) WO2012143091A1 (es)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10458015B2 (en) 2011-12-05 2019-10-29 Oerlikon Surface Solutions Ag, Pfäffikon Reactive sputtering process
DE102012021346A1 (de) * 2012-11-01 2014-08-28 Oerlikon Trading Ag, Trübbach Leistungsverteiler zur definierten sequenziellen Leistungsverteilung
JP6463078B2 (ja) * 2014-10-24 2019-01-30 日立金属株式会社 被覆工具の製造方法
US9812305B2 (en) * 2015-04-27 2017-11-07 Advanced Energy Industries, Inc. Rate enhanced pulsed DC sputtering system
MY193962A (en) 2015-11-12 2022-11-03 Oerlikon Surface Solutions Ag Pfaffikon Sputtering arrangement and sputtering method for optimized distribution of the energy flow
US11359274B2 (en) 2015-12-21 2022-06-14 IonQuestCorp. Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source
US9951414B2 (en) 2015-12-21 2018-04-24 IonQuest LLC Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films
US11823859B2 (en) 2016-09-09 2023-11-21 Ionquest Corp. Sputtering a layer on a substrate using a high-energy density plasma magnetron
US11482404B2 (en) 2015-12-21 2022-10-25 Ionquest Corp. Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source
MY189225A (en) 2016-04-22 2022-01-31 Oerlikon Surface Solutions Ag Pfaffikon Ticn having reduced growth defects by means of hipims

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6141766A (ja) * 1984-08-06 1986-02-28 Hitachi Ltd スパツタリング方法およびスパツタ−装置
JPH07116596B2 (ja) * 1989-02-15 1995-12-13 株式会社日立製作所 薄膜形成方法、及びその装置
EP0383301B1 (en) * 1989-02-15 1999-09-15 Hitachi, Ltd. Method and apparatus for forming a film
DE19651615C1 (de) * 1996-12-12 1997-07-10 Fraunhofer Ges Forschung Verfahren zum Aufbringen von Kohlenstoffschichten durch reaktives Magnetron-Sputtern
US20050103620A1 (en) * 2003-11-19 2005-05-19 Zond, Inc. Plasma source with segmented magnetron cathode
EP1580298A1 (fr) * 2004-03-22 2005-09-28 Materia Nova A.S.B.L Dépôt par pulverisation cathodique magnétron en régime impulsionnel avec préionisation
US20060260938A1 (en) * 2005-05-20 2006-11-23 Petrach Philip M Module for Coating System and Associated Technology
DE102006017382A1 (de) 2005-11-14 2007-05-16 Itg Induktionsanlagen Gmbh Verfahren und Vorrichtung zum Beschichten und/oder zur Behandlung von Oberflächen
US20080197015A1 (en) * 2007-02-16 2008-08-21 Terry Bluck Multiple-magnetron sputtering source with plasma confinement
JP5448232B2 (ja) 2008-04-28 2014-03-19 コムコン・アーゲー 物体を前処理及びコーテイングするための装置及び方法
DE202010001497U1 (de) 2010-01-29 2010-04-22 Hauzer Techno-Coating B.V. Beschichtungsvorrichtung mit einer HIPIMS-Leistungsquelle
DE102011018363A1 (de) 2011-04-20 2012-10-25 Oerlikon Trading Ag, Trübbach Hochleistungszerstäubungsquelle
JP7116596B2 (ja) * 2018-05-31 2022-08-10 川崎重工業株式会社 リード線挿入装置およびリード線挿入方法

Also Published As

Publication number Publication date
AR086194A1 (es) 2013-11-27
CA2833796A1 (en) 2012-10-26
MY183993A (en) 2021-03-17
WO2012143091A1 (de) 2012-10-26
JP2014514453A (ja) 2014-06-19
BR112013026962A2 (pt) 2017-01-10
KR101537883B1 (ko) 2015-07-17
US20140190819A1 (en) 2014-07-10
RU2596818C2 (ru) 2016-09-10
CN103608893A (zh) 2014-02-26
US9267200B2 (en) 2016-02-23
SG194568A1 (en) 2013-12-30
ES2543053T3 (es) 2015-08-14
TW201243082A (en) 2012-11-01
KR20140019806A (ko) 2014-02-17
BR112013026962B1 (pt) 2021-02-09
MX346377B (es) 2017-03-16
EP2700083B1 (de) 2015-04-22
TWI586825B (zh) 2017-06-11
RU2013151453A (ru) 2015-05-27
HUE025643T2 (en) 2016-04-28
PT2700083E (pt) 2015-08-24
EP2700083A1 (de) 2014-02-26
CA2833796C (en) 2018-07-31
PL2700083T3 (pl) 2015-10-30
JP5713331B2 (ja) 2015-05-07
WO2012143091A8 (de) 2013-11-28
CN103608893B (zh) 2016-08-31

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