MX2022004907A - Dispositivo de visualizacion led. - Google Patents
Dispositivo de visualizacion led.Info
- Publication number
- MX2022004907A MX2022004907A MX2022004907A MX2022004907A MX2022004907A MX 2022004907 A MX2022004907 A MX 2022004907A MX 2022004907 A MX2022004907 A MX 2022004907A MX 2022004907 A MX2022004907 A MX 2022004907A MX 2022004907 A MX2022004907 A MX 2022004907A
- Authority
- MX
- Mexico
- Prior art keywords
- unit
- led sub
- light emitting
- emitting elements
- disposed
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/032—Manufacture or treatment of electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/034—Manufacture or treatment of coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0364—Manufacture or treatment of packages of interconnections
Landscapes
- Led Device Packages (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962927196P | 2019-10-29 | 2019-10-29 | |
| US17/082,018 US11489002B2 (en) | 2019-10-29 | 2020-10-28 | LED display apparatus |
| PCT/KR2020/014851 WO2021086026A1 (ko) | 2019-10-29 | 2020-10-29 | Led 디스플레이 장치 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MX2022004907A true MX2022004907A (es) | 2022-06-29 |
Family
ID=75586119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MX2022004907A MX2022004907A (es) | 2019-10-29 | 2020-10-29 | Dispositivo de visualizacion led. |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US11489002B2 (OSRAM) |
| EP (1) | EP4024453A4 (OSRAM) |
| JP (1) | JP7673061B2 (OSRAM) |
| KR (1) | KR102899779B1 (OSRAM) |
| CN (2) | CN213782016U (OSRAM) |
| BR (1) | BR112022008047A2 (OSRAM) |
| MX (1) | MX2022004907A (OSRAM) |
| WO (1) | WO2021086026A1 (OSRAM) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11489002B2 (en) * | 2019-10-29 | 2022-11-01 | Seoul Viosys Co., Ltd. | LED display apparatus |
| EP4060753A4 (en) * | 2019-11-15 | 2024-01-17 | Seoul Viosys Co., Ltd | LIGHT EMITTING DEVICE FOR A DISPLAY AND DISPLAY DEVICE THEREFOR |
| US11437353B2 (en) * | 2019-11-15 | 2022-09-06 | Seoul Viosys Co., Ltd. | Light emitting device for display and display apparatus having the same |
| CN114078897A (zh) * | 2020-08-19 | 2022-02-22 | 京东方科技集团股份有限公司 | 发光器件及其制备方法、显示面板、背光模组和显示装置 |
| US11417703B2 (en) * | 2020-08-31 | 2022-08-16 | Hong Kong Beida Jade Bird Display Limited | Double color micro LED display panel |
| US11476299B2 (en) * | 2020-08-31 | 2022-10-18 | Hong Kong Beida Jade Bird Display Limited | Double color micro LED display panel |
| US11646300B2 (en) * | 2020-09-01 | 2023-05-09 | Jade Bird Display (shanghai) Limited | Double color micro LED display panel |
| CN115117211B (zh) * | 2021-03-18 | 2025-07-01 | 隆达电子股份有限公司 | 半导体晶片与发光装置 |
| CN114664983B (zh) * | 2022-03-22 | 2023-03-21 | 西湖大学 | 一种基于Micro LED的显示装置的制作方法以及显示装置 |
| CN115394762B (zh) * | 2022-05-17 | 2024-07-09 | 诺视科技(苏州)有限公司 | 一种具有透明衬底的像素级分立器件及其制作方法 |
| JP2024092521A (ja) * | 2022-12-26 | 2024-07-08 | 沖電気工業株式会社 | 発光装置 |
| US20240322093A1 (en) * | 2023-03-23 | 2024-09-26 | Yenrich Technology Corporation | Light-emitting module |
| US20240363820A1 (en) * | 2023-04-28 | 2024-10-31 | Seoul Viosys Co., Ltd. | Light emitting module and display device having the same |
| JP7741522B2 (ja) * | 2023-06-16 | 2025-09-18 | シャープ株式会社 | 表示パネル |
| JP7741521B2 (ja) * | 2023-06-16 | 2025-09-18 | シャープ株式会社 | 表示パネル |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0876697A (ja) * | 1994-09-02 | 1996-03-22 | Sharp Corp | 発光表示装置 |
| KR101100579B1 (ko) | 2005-01-06 | 2012-01-13 | 엘지이노텍 주식회사 | 반도체 발광 다이오드 및 그의 제조 방법과 반도체 발광다이오드를 이용한 디스플레이의 제조 방법 |
| TWI594661B (zh) * | 2013-04-19 | 2017-08-01 | 隆達電子股份有限公司 | 發光二極體顯示器及其製造方法 |
| JP5932087B2 (ja) | 2015-03-23 | 2016-06-08 | 株式会社東芝 | 光半導体装置 |
| CN105261710B (zh) * | 2015-11-19 | 2017-05-10 | 深圳市华星光电技术有限公司 | 显示器及其有机发光二极管器件 |
| KR102605973B1 (ko) * | 2016-02-26 | 2023-11-27 | 엘지이노텍 주식회사 | 픽셀 모듈 및 이를 구비한 표시 장치 |
| KR102566499B1 (ko) | 2016-05-26 | 2023-08-11 | 엘지이노텍 주식회사 | 발광 소자 |
| US10964862B2 (en) * | 2016-09-30 | 2021-03-30 | Sensor Electronic Technology, Inc. | Semiconductor heterostructure with multiple active regions |
| KR102503578B1 (ko) | 2017-06-30 | 2023-02-24 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 |
| CN110121771A (zh) * | 2017-09-04 | 2019-08-13 | 首尔半导体株式会社 | 显示装置及该显示装置的制造方法 |
| KR102459573B1 (ko) | 2017-09-14 | 2022-10-27 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 |
| KR102565147B1 (ko) * | 2017-11-08 | 2023-08-18 | 서울바이오시스 주식회사 | 복수의 픽셀들을 포함하는 디스플레이용 발광 다이오드 유닛 및 그것을 갖는 디스플레이 장치 |
| US11527519B2 (en) * | 2017-11-27 | 2022-12-13 | Seoul Viosys Co., Ltd. | LED unit for display and display apparatus having the same |
| US11282981B2 (en) * | 2017-11-27 | 2022-03-22 | Seoul Viosys Co., Ltd. | Passivation covered light emitting unit stack |
| US10797027B2 (en) * | 2017-12-05 | 2020-10-06 | Seoul Semiconductor Co., Ltd. | Displaying apparatus having light emitting device, method of manufacturing the same and method of transferring light emitting device |
| US10748881B2 (en) * | 2017-12-05 | 2020-08-18 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
| US10964674B2 (en) * | 2018-02-06 | 2021-03-30 | Lumens Co., Ltd. | Micro-LED display panel |
| KR102769519B1 (ko) * | 2018-02-14 | 2025-02-17 | 에피스타 코포레이션 | 발광 장치, 그 제조 방법 및 디스플레이 모듈 |
| US11482650B2 (en) * | 2018-11-07 | 2022-10-25 | Seoul Viosys Co., Ltd. | Light emitting device including light shielding layer |
| US11476236B2 (en) * | 2018-11-07 | 2022-10-18 | Seoul Viosys Co., Ltd. | Display apparatus |
| TWI671489B (zh) * | 2018-11-12 | 2019-09-11 | 台灣愛司帝科技股份有限公司 | 發光二極體顯示器 |
| US10943532B2 (en) * | 2018-12-11 | 2021-03-09 | The Hong Kong University Of Science And Technology | Monolithic full-color light-emitting diode display panel |
| US11508876B2 (en) * | 2018-12-31 | 2022-11-22 | Seoul Viosys Co., Ltd. | Light emitting device package and display device having the same |
| US11211528B2 (en) * | 2019-03-13 | 2021-12-28 | Seoul Viosys Co., Ltd. | Light emitting device for display and display apparatus having the same |
| US11756980B2 (en) * | 2019-05-14 | 2023-09-12 | Seoul Viosys Co., Ltd. | LED chip package and manufacturing method of the same |
| US11901397B2 (en) * | 2019-05-14 | 2024-02-13 | Seoul Viosys Co., Ltd. | LED chip having fan-out structure and manufacturing method of the same |
| US11855121B2 (en) * | 2019-05-14 | 2023-12-26 | Seoul Viosys Co., Ltd. | LED chip and manufacturing method of the same |
| US11587914B2 (en) * | 2019-05-14 | 2023-02-21 | Seoul Viosys Co., Ltd. | LED chip and manufacturing method of the same |
| US11482566B2 (en) * | 2019-08-20 | 2022-10-25 | Seoul Viosys Co., Ltd. | Light emitting device for display and display apparatus having the same |
| US11398462B2 (en) * | 2019-09-18 | 2022-07-26 | Seoul Viosys Co., Ltd. | Light emitting device for display and light emitting package having the same |
| US11798974B2 (en) * | 2019-09-27 | 2023-10-24 | Seoul Viosys Co., Ltd. | Light emitting device for display and display apparatus having the same |
| US10847083B1 (en) * | 2019-10-14 | 2020-11-24 | Shaoher Pan | Integrated active-matrix light emitting pixel arrays based devices by laser-assisted bonding |
| US11810944B2 (en) * | 2019-10-23 | 2023-11-07 | Seoul Viosys Co., Ltd. | LED display apparatus |
| US11658275B2 (en) * | 2019-10-28 | 2023-05-23 | Seoul Viosys Co., Ltd. | Light emitting device for display and LED display apparatus having the same |
| US11817435B2 (en) * | 2019-10-28 | 2023-11-14 | Seoul Viosys Co., Ltd. | Light emitting device for display and LED display apparatus having the same |
| US11489002B2 (en) * | 2019-10-29 | 2022-11-01 | Seoul Viosys Co., Ltd. | LED display apparatus |
-
2020
- 2020-10-28 US US17/082,018 patent/US11489002B2/en active Active
- 2020-10-29 KR KR1020227004596A patent/KR102899779B1/ko active Active
- 2020-10-29 JP JP2022524027A patent/JP7673061B2/ja active Active
- 2020-10-29 EP EP20882978.8A patent/EP4024453A4/en active Pending
- 2020-10-29 BR BR112022008047A patent/BR112022008047A2/pt unknown
- 2020-10-29 WO PCT/KR2020/014851 patent/WO2021086026A1/ko not_active Ceased
- 2020-10-29 MX MX2022004907A patent/MX2022004907A/es unknown
- 2020-10-29 CN CN202022457435.2U patent/CN213782016U/zh active Active
- 2020-10-29 CN CN202080075517.0A patent/CN114616674A/zh not_active Withdrawn
-
2022
- 2022-10-30 US US17/976,864 patent/US11837625B2/en active Active
-
2023
- 2023-12-04 US US18/527,987 patent/US12199133B2/en active Active
-
2024
- 2024-10-31 US US18/933,120 patent/US20250056953A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US11837625B2 (en) | 2023-12-05 |
| US20240120365A1 (en) | 2024-04-11 |
| CN114616674A (zh) | 2022-06-10 |
| WO2021086026A1 (ko) | 2021-05-06 |
| JP7673061B2 (ja) | 2025-05-08 |
| EP4024453A4 (en) | 2023-10-25 |
| US20250056953A1 (en) | 2025-02-13 |
| EP4024453A1 (en) | 2022-07-06 |
| CN213782016U (zh) | 2021-07-23 |
| BR112022008047A2 (pt) | 2022-07-12 |
| US11489002B2 (en) | 2022-11-01 |
| KR20220091457A (ko) | 2022-06-30 |
| US12199133B2 (en) | 2025-01-14 |
| KR102899779B1 (ko) | 2025-12-18 |
| US20210126043A1 (en) | 2021-04-29 |
| US20230053740A1 (en) | 2023-02-23 |
| JP2023501923A (ja) | 2023-01-20 |
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