CN213782016U - 显示装置 - Google Patents

显示装置 Download PDF

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Publication number
CN213782016U
CN213782016U CN202022457435.2U CN202022457435U CN213782016U CN 213782016 U CN213782016 U CN 213782016U CN 202022457435 U CN202022457435 U CN 202022457435U CN 213782016 U CN213782016 U CN 213782016U
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light emitting
light
emitting element
layer
display device
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Chinese (zh)
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李贞勳
赵大成
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Seoul Viosys Co Ltd
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Seoul Viosys Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections

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  • Led Device Packages (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CN202022457435.2U 2019-10-29 2020-10-29 显示装置 Active CN213782016U (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962927196P 2019-10-29 2019-10-29
US62/927,196 2019-10-29
US17/082,018 2020-10-28
US17/082,018 US11489002B2 (en) 2019-10-29 2020-10-28 LED display apparatus

Publications (1)

Publication Number Publication Date
CN213782016U true CN213782016U (zh) 2021-07-23

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN202022457435.2U Active CN213782016U (zh) 2019-10-29 2020-10-29 显示装置
CN202080075517.0A Withdrawn CN114616674A (zh) 2019-10-29 2020-10-29 Led显示装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202080075517.0A Withdrawn CN114616674A (zh) 2019-10-29 2020-10-29 Led显示装置

Country Status (8)

Country Link
US (4) US11489002B2 (OSRAM)
EP (1) EP4024453A4 (OSRAM)
JP (1) JP7673061B2 (OSRAM)
KR (1) KR102899779B1 (OSRAM)
CN (2) CN213782016U (OSRAM)
BR (1) BR112022008047A2 (OSRAM)
MX (1) MX2022004907A (OSRAM)
WO (1) WO2021086026A1 (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114616674A (zh) * 2019-10-29 2022-06-10 首尔伟傲世有限公司 Led显示装置
CN114664983A (zh) * 2022-03-22 2022-06-24 西湖大学 一种基于Micro LED的显示装置的制作方法以及显示装置

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EP4060753A4 (en) * 2019-11-15 2024-01-17 Seoul Viosys Co., Ltd LIGHT EMITTING DEVICE FOR A DISPLAY AND DISPLAY DEVICE THEREFOR
US11437353B2 (en) * 2019-11-15 2022-09-06 Seoul Viosys Co., Ltd. Light emitting device for display and display apparatus having the same
CN114078897A (zh) * 2020-08-19 2022-02-22 京东方科技集团股份有限公司 发光器件及其制备方法、显示面板、背光模组和显示装置
US11417703B2 (en) * 2020-08-31 2022-08-16 Hong Kong Beida Jade Bird Display Limited Double color micro LED display panel
US11476299B2 (en) * 2020-08-31 2022-10-18 Hong Kong Beida Jade Bird Display Limited Double color micro LED display panel
US11646300B2 (en) * 2020-09-01 2023-05-09 Jade Bird Display (shanghai) Limited Double color micro LED display panel
CN115117211B (zh) * 2021-03-18 2025-07-01 隆达电子股份有限公司 半导体晶片与发光装置
CN115394762B (zh) * 2022-05-17 2024-07-09 诺视科技(苏州)有限公司 一种具有透明衬底的像素级分立器件及其制作方法
JP2024092521A (ja) * 2022-12-26 2024-07-08 沖電気工業株式会社 発光装置
US20240322093A1 (en) * 2023-03-23 2024-09-26 Yenrich Technology Corporation Light-emitting module
US20240363820A1 (en) * 2023-04-28 2024-10-31 Seoul Viosys Co., Ltd. Light emitting module and display device having the same
JP7741522B2 (ja) * 2023-06-16 2025-09-18 シャープ株式会社 表示パネル
JP7741521B2 (ja) * 2023-06-16 2025-09-18 シャープ株式会社 表示パネル

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CN110121771A (zh) * 2017-09-04 2019-08-13 首尔半导体株式会社 显示装置及该显示装置的制造方法
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US11658275B2 (en) * 2019-10-28 2023-05-23 Seoul Viosys Co., Ltd. Light emitting device for display and LED display apparatus having the same
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114616674A (zh) * 2019-10-29 2022-06-10 首尔伟傲世有限公司 Led显示装置
CN114664983A (zh) * 2022-03-22 2022-06-24 西湖大学 一种基于Micro LED的显示装置的制作方法以及显示装置

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Publication number Publication date
MX2022004907A (es) 2022-06-29
US11837625B2 (en) 2023-12-05
US20240120365A1 (en) 2024-04-11
CN114616674A (zh) 2022-06-10
WO2021086026A1 (ko) 2021-05-06
JP7673061B2 (ja) 2025-05-08
EP4024453A4 (en) 2023-10-25
US20250056953A1 (en) 2025-02-13
EP4024453A1 (en) 2022-07-06
BR112022008047A2 (pt) 2022-07-12
US11489002B2 (en) 2022-11-01
KR20220091457A (ko) 2022-06-30
US12199133B2 (en) 2025-01-14
KR102899779B1 (ko) 2025-12-18
US20210126043A1 (en) 2021-04-29
US20230053740A1 (en) 2023-02-23
JP2023501923A (ja) 2023-01-20

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