MX2008014559A - Arreglo de diodos laser de alta potencia que incluye al menos un laser de semiconductores de alta potencia y una fuente de luz laser que lo contiene. - Google Patents

Arreglo de diodos laser de alta potencia que incluye al menos un laser de semiconductores de alta potencia y una fuente de luz laser que lo contiene.

Info

Publication number
MX2008014559A
MX2008014559A MX2008014559A MX2008014559A MX2008014559A MX 2008014559 A MX2008014559 A MX 2008014559A MX 2008014559 A MX2008014559 A MX 2008014559A MX 2008014559 A MX2008014559 A MX 2008014559A MX 2008014559 A MX2008014559 A MX 2008014559A
Authority
MX
Mexico
Prior art keywords
laser
high power
fast
slow axis
diode
Prior art date
Application number
MX2008014559A
Other languages
English (en)
Inventor
Boris Regaard
Thorsten Schmidt
Stefan Heinemann
Original Assignee
Fraunhofer Usa Inc Ct For Lase
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Usa Inc Ct For Lase filed Critical Fraunhofer Usa Inc Ct For Lase
Publication of MX2008014559A publication Critical patent/MX2008014559A/es

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0052—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode
    • G02B19/0057—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode in the form of a laser diode array, e.g. laser diode bar
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0019—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors)
    • G02B19/0023—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors) at least one surface having optical power
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0028—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed refractive and reflective surfaces, e.g. non-imaging catadioptric systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H01S5/405—Two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers

Abstract

Se presenta un arreglo de diodos láser de alta potencia que incluye: al menos un diodo láser de alta potencia (40a-c; 40) que incluye una pluralidad de emisores de luz láser (2) que emiten haces de láser de salida, cada uno de ellos define, en una dirección perpendicular a una dirección de propagación (z; z') de un haz de láser de salida, un eje rápido (y; y') y un eje lento (x; x'); medios colimadores del eje rápido (32; 70) que coliman los haces de láser de salida en la dirección del eje rápido (y; y') para suministrar los haces de láser de salida colimados del eje rápido, y medios que conforman el haz del eje lento (41; 37; 72) que coliman o concentran los haces de láser de salida en la dirección del eje lento(y; y'), los medios conformadores del haz del eje lento (41; 37, 72) están ubicados en forma externa al o a los diodos láser de alta potencia (40a-c; 40); donde los emisores de luz láser (2) están desplazados unos con respecto a los demás en la dirección del eje rápido o en la dirección del eje rápido y lento, respectivamente, por medio de separaciones equidistantes; y un medio óptico (41; 37, 72) provisto para formar el perfil del haz, láser de salida (50) en el campo lejano de todos los emisores de luz láser que consiste de la pluralidad de haces láser d salida colimados o concentrados en el eje rápido o lento (36a- 36c; 51) dispuestos adyacentes entre sí de manera continua en una dimensión o en dos dimensiones con un factor de llenado óptico del 100% o cercano al 100%. De conformidad con la invención, el medio conformador del haz del eje lento está constituido o formado por el medio óptico (41; 37; 72). De este modo, es posible alcanzar un factor de llenado óptico del 100% sin reacomodar los haces láser de salida individuales.
MX2008014559A 2007-11-16 2008-11-14 Arreglo de diodos laser de alta potencia que incluye al menos un laser de semiconductores de alta potencia y una fuente de luz laser que lo contiene. MX2008014559A (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US98857707P 2007-11-16 2007-11-16
EP08100714 2008-01-21
EP08103278.1A EP2061122B1 (en) 2007-11-16 2008-03-31 A high power laser diode array comprising at least one high power diode laser, laser light source comprising the same and method for production thereof

Publications (1)

Publication Number Publication Date
MX2008014559A true MX2008014559A (es) 2009-05-27

Family

ID=39529407

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2008014559A MX2008014559A (es) 2007-11-16 2008-11-14 Arreglo de diodos laser de alta potencia que incluye al menos un laser de semiconductores de alta potencia y una fuente de luz laser que lo contiene.

Country Status (5)

Country Link
US (1) US7751458B2 (es)
EP (1) EP2061122B1 (es)
JP (1) JP4980329B2 (es)
CA (1) CA2643923C (es)
MX (1) MX2008014559A (es)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120037886A1 (en) * 2007-11-13 2012-02-16 Epistar Corporation Light-emitting diode device
JP2010166019A (ja) * 2008-12-18 2010-07-29 Panasonic Corp 半導体レーザ装置
JP5471278B2 (ja) * 2009-10-16 2014-04-16 株式会社リコー 光デバイス、光走査装置、画像形成装置、光伝送モジュール及び光伝送システム
US9246310B2 (en) * 2010-08-03 2016-01-26 President And Fellows Of Harvard College Wavelength beam combining of quantum cascade laser arrays
DE102010044875A1 (de) * 2010-09-09 2012-03-15 Limo Patentverwaltung Gmbh & Co. Kg Beleuchtungsvorrichtung zur Erzeugung einer linienförmigen Intensitätsverteilung in einer Arbeitsebene
US9535273B2 (en) * 2011-07-21 2017-01-03 Photon Dynamics, Inc. Apparatus for viewing through optical thin film color filters and their overlaps
US20140133509A1 (en) * 2011-12-07 2014-05-15 Daylight Solutions, Inc. Laser assembly that provides an adjusted output beam having symmetrical beam parameters
US8891579B1 (en) 2011-12-16 2014-11-18 Nlight Photonics Corporation Laser diode apparatus utilizing reflecting slow axis collimators
CN102591019B (zh) * 2012-03-02 2014-08-20 李德龙 用于半导体激光器的聚焦式光束压缩方法及其装置
DE102012205513B4 (de) 2012-04-04 2021-12-09 Osram Gmbh Verfahren zum Herstellen einer Strahlungsanordnung und Strahlungsanordnung
US8866041B2 (en) * 2012-04-12 2014-10-21 Tdk Corporation Apparatus and method of manufacturing laser diode unit utilizing submount bar
AT513254B1 (de) * 2012-08-03 2014-03-15 Daniel Dr Kopf Pumpeinrichtung zum Pumpen eines verstärkenden Lasermediums
EP2891911A4 (en) 2012-08-29 2015-09-09 Fujikura Ltd LIGHTING DEVICE, MANUFACTURING METHOD AND LD MODULE
JP5717714B2 (ja) * 2012-12-27 2015-05-13 株式会社フジクラ 合波装置、合波方法、及び、ｌｄモジュール
DE102013209919A1 (de) 2013-05-28 2014-12-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einem Gehäuse mit mehreren Öffnungen
CN103591509B (zh) * 2013-11-08 2015-09-09 京东方科技集团股份有限公司 一种背光源和显示装置
CN103579905B (zh) * 2013-11-11 2016-02-10 西北大学 空间叠加耦合高功率半导体激光叠阵系统
WO2015134931A1 (en) 2014-03-06 2015-09-11 Nlight Photonics Corporation High brightness multijunction diode stacking
US9705289B2 (en) 2014-03-06 2017-07-11 Nlight, Inc. High brightness multijunction diode stacking
JP6463111B2 (ja) * 2014-09-16 2019-01-30 三菱電機株式会社 レーザ光源装置および映像表示装置
US9318876B1 (en) 2015-01-22 2016-04-19 Trumpf Photonics, Inc. Arrangement of multiple diode laser module and method for operating the same
JP6093388B2 (ja) * 2015-03-17 2017-03-08 株式会社フジクラ 合波装置、合波装置の製造方法、及び、ｌｄモジュール
CN104836619B (zh) 2015-03-30 2017-08-29 青岛海信宽带多媒体技术有限公司 一种光器件
CN104767103B (zh) 2015-03-30 2017-12-19 青岛海信宽带多媒体技术有限公司 一种激光器用连接结构及激光器组件
US10761276B2 (en) 2015-05-15 2020-09-01 Nlight, Inc. Passively aligned crossed-cylinder objective assembly
JP6288132B2 (ja) * 2015-05-20 2018-03-07 日亜化学工業株式会社 発光装置
US9413136B1 (en) 2015-07-08 2016-08-09 Trumpf Photonics, Inc. Stepped diode laser module with cooling structure
US10304813B2 (en) * 2015-11-05 2019-05-28 Innolux Corporation Display device having a plurality of bank structures
KR102107159B1 (ko) 2016-02-16 2020-05-07 엔라이트 인크. 개선된 패키지 휘도를 위한 수동 정렬된 단일 요소 텔레스코프
WO2017161334A1 (en) 2016-03-18 2017-09-21 Nlight, Inc. Spectrally multiplexing diode pump modules to improve brightness
DE102016107715A1 (de) * 2016-04-26 2017-10-26 Osram Opto Semiconductors Gmbh Lasermodul mit einem optischen Bauteil
US10439358B2 (en) 2016-04-28 2019-10-08 Nichia Corporation Manufacturing method of light-emitting device
JP6648712B2 (ja) * 2016-04-28 2020-02-14 日亜化学工業株式会社 発光装置の製造方法
CN105896311B (zh) * 2016-06-22 2018-09-11 长春德信光电技术有限公司 一种基于半导体激光合束技术的白光激光器
JP6814887B2 (ja) 2016-12-23 2021-01-20 エヌライト，インコーポレーテッド 低コスト光ポンプレーザパッケージ
US10855056B2 (en) * 2017-01-10 2020-12-01 Nlight, Inc. Power and brightness scaling in fiber coupled diode lasers using diodes with optimized beam dimensions
JP6504193B2 (ja) * 2017-03-30 2019-04-24 日亜化学工業株式会社 発光装置
US10168538B2 (en) * 2017-04-12 2019-01-01 Massachusetts Institute Of Technology Symmetric micro-optic module
US10763640B2 (en) 2017-04-24 2020-09-01 Nlight, Inc. Low swap two-phase cooled diode laser package
JP2018190864A (ja) * 2017-05-09 2018-11-29 ウシオ電機株式会社 半導体レーザ装置
CN107492785B (zh) * 2017-08-16 2019-08-20 西安炬光科技股份有限公司 一种实现圆形光斑的半导体激光器光源模块以及侧面泵浦装置
US10431959B2 (en) * 2017-10-02 2019-10-01 Nichia Corporation Light emitting device and optical device
US11425356B2 (en) * 2017-10-05 2022-08-23 Brown University System and method to calibrate an uncollimated laser diode for 3D imaging applications
CN108233182B (zh) * 2017-12-25 2020-04-10 长春理工大学 基于空心全反射棱镜压缩光束的光纤耦合系统
WO2019130065A2 (en) * 2017-12-29 2019-07-04 Casela Technologies Photon source comprising a plurality of optical sources and an optical shell to receive the light emitted by the optical source
US10833482B2 (en) 2018-02-06 2020-11-10 Nlight, Inc. Diode laser apparatus with FAC lens out-of-plane beam steering
US10690457B2 (en) * 2018-04-26 2020-06-23 AI Incorporated Method and apparatus for overexposing images captured by drones
DE102018214803B4 (de) 2018-08-31 2021-09-02 Robert Bosch Gmbh Vorrichtung zum Einkoppeln elektromagnetischer Wellen in einen Chip
CN109188398B (zh) * 2018-09-26 2023-08-04 深圳市速腾聚创科技有限公司 激光雷达、快慢轴光束能量的收敛系统及收敛方法
DE102018129346A1 (de) * 2018-11-21 2020-05-28 Osram Opto Semiconductors Gmbh Halbleiterlaser und herstellungsverfahren für einen halbleiterlaser
WO2020134220A1 (zh) * 2018-12-24 2020-07-02 青岛海信激光显示股份有限公司 激光器组件、激光光源和激光投影设备
CN111722459B (zh) * 2019-03-19 2022-08-26 青岛海信激光显示股份有限公司 一种激光器组件、激光光源和激光投影设备
CN109581640B (zh) * 2019-01-24 2023-09-26 平顶山学院 将光线耦合进光纤的大口径紧凑透反射结合式光采集器
CN109802296B (zh) * 2019-03-01 2024-04-09 太原理工大学 边发射激光器光束整形结构、激光器芯片及其制备方法
WO2021042301A1 (zh) 2019-09-04 2021-03-11 深圳市速腾聚创科技有限公司 激光雷达
WO2021030718A1 (en) * 2019-08-14 2021-02-18 Nlight, Inc. High brightness fiber coupled diode lasers with circularized beams
CN113437635A (zh) * 2020-03-23 2021-09-24 青岛海信激光显示股份有限公司 激光器
CN112444796B (zh) * 2020-11-17 2023-09-08 深圳市镭神智能系统有限公司 一种振镜和激光雷达
JP2022129829A (ja) * 2021-02-25 2022-09-06 株式会社リコー マーキング装置、媒体、収容体及びマーキング方法
CN116053934B (zh) * 2023-03-28 2023-08-22 度亘核芯光电技术(苏州)有限公司 激光器快慢轴准直方法及装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0627901B2 (ja) * 1985-03-11 1994-04-13 富士写真フイルム株式会社 半導体レ−ザ光源装置
JPH0260179A (ja) * 1988-08-26 1990-02-28 Fuji Photo Film Co Ltd 合波用レーザ光源装置
US5099488A (en) 1991-03-27 1992-03-24 Spectra Diode Laboratories, Inc. Ribbed submounts for two dimensional stacked laser array
US6124973A (en) * 1996-02-23 2000-09-26 Fraunhofer Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Device for providing the cross-section of the radiation emitted by several solid-state and/or semiconductor diode lasers with a specific geometry
DE19939750C2 (de) 1999-08-21 2001-08-23 Laserline Ges Fuer Entwicklung Optische Anordnung zur Verwendung bei einer Laserdiodenanordnung sowie Laserdiodenanordnung mit einer solchen optischen Anordnung
JP2001215443A (ja) * 2000-02-04 2001-08-10 Hamamatsu Photonics Kk 光学装置
US6975659B2 (en) 2001-09-10 2005-12-13 Fuji Photo Film Co., Ltd. Laser diode array, laser device, wave-coupling laser source, and exposure device
JP3930405B2 (ja) * 2002-03-19 2007-06-13 株式会社ジェイテクト レーザ集光装置
JP4128037B2 (ja) * 2002-07-08 2008-07-30 株式会社トプコン 半導体レーザ装置
JP2004179607A (ja) 2002-09-30 2004-06-24 Fuji Photo Film Co Ltd レーザー装置
US7088883B2 (en) 2003-09-30 2006-08-08 Textron Systems Corporation Beam combination using interleaved optical plates
JP4739819B2 (ja) * 2005-05-31 2011-08-03 リコー光学株式会社 光束配列密度変換方法および光束配列密度変換部材および光源装置
JP2007102121A (ja) * 2005-10-07 2007-04-19 Sony Corp 像変換装置
EP1830443B1 (en) 2006-03-03 2016-06-08 Fraunhofer USA, Inc. High power diode laser having multiple emitters and method for its production

Also Published As

Publication number Publication date
US7751458B2 (en) 2010-07-06
JP2009170881A (ja) 2009-07-30
EP2061122A1 (en) 2009-05-20
EP2061122B1 (en) 2014-07-02
US20090129420A1 (en) 2009-05-21
CA2643923C (en) 2016-12-13
JP4980329B2 (ja) 2012-07-18
CA2643923A1 (en) 2009-05-16

Similar Documents

Publication Publication Date Title
MX2008014559A (es) Arreglo de diodos laser de alta potencia que incluye al menos un laser de semiconductores de alta potencia y una fuente de luz laser que lo contiene.
CN107615601B (zh) 激光模块及激光加工装置
CN103048792B (zh) 光源系统与激光光源
US20070217740A1 (en) Method and apparatus for optimizing the target intensity distribution transmitted from a fiber coupled array
WO2016118849A3 (en) Arrangement of multiple diode laser module and method of operating the same
CN102208753A (zh) 多波长联合外腔半导体激光器
JP2011243717A5 (es)
CN105340140A (zh) 激光装置
CN102334060B (zh) 用于使激光辐射均匀化的设备
EP2523280A3 (en) Multi-wavelength diode laser array
JP2018530768A (ja) レーザー送達アドレス指定可能アレイのための用途、方法、及びシステム
KR102198779B1 (ko) 선형 세기 분포를 갖는 레이저 방사선의 생성 장치
CN101464563B (zh) 激光辐射成形的装置
CN204631362U (zh) 半导体激光器光束准直装置
CN101825749A (zh) 一种基于半导体激光微型巴条的光纤耦合模块
CN101923219B (zh) 四分等比例分光装置及具有该装置的激光刻线机
CN202676983U (zh) 激光光源及相关发光装置
TW200721538A (en) Edge-emitting LED light source
WO2007097800A3 (en) Laser diode array beam translator
CN103744186A (zh) 一种激光二极管线阵/面阵的光束整形系统
CN201674110U (zh) 一种实现半导体激光列阵光束重组和光纤耦合的装置
US20070211996A1 (en) Laser bar coupler with improved brightness
CN106229808B (zh) 脉冲激光器
WO2021208996A1 (zh) 一种激光光源
CN201096928Y (zh) 大功率半导体激光器阵列光束准直装置

Legal Events

Date Code Title Description
FG Grant or registration