MX167979B - Estructura semiconductora que tiene pelicula resistente a particulas alfa y metodo para elaborar la misma - Google Patents
Estructura semiconductora que tiene pelicula resistente a particulas alfa y metodo para elaborar la mismaInfo
- Publication number
- MX167979B MX167979B MX203741A MX20374184A MX167979B MX 167979 B MX167979 B MX 167979B MX 203741 A MX203741 A MX 203741A MX 20374184 A MX20374184 A MX 20374184A MX 167979 B MX167979 B MX 167979B
- Authority
- MX
- Mexico
- Prior art keywords
- prepare
- same
- resistant film
- alpha particle
- semiconductive structure
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3164—Partial encapsulation or coating the coating being a foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
- H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Abstract
La presente invención se refiere a un método para elaborar una estructura semiconductora, que comprende los pasos de: proporcionar una oblea semiconductora que incluye una pluralidad de circuitos integrados en la misma, la oblea teniendo un par de superficies principales opuestas, una de las superficies incluyendo una pluralidad de regiones de dispositivo que se someten a degradación mediante partículas alfa y caracterizado por el paso de: aplicar una película resistente a partículas alfa, preformada a las predeterminadas de las regiones de dispositivo.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US57840884A | 1984-02-09 | 1984-02-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
MX167979B true MX167979B (es) | 1993-04-26 |
Family
ID=24312754
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX203741A MX167979B (es) | 1984-02-09 | 1984-12-14 | Estructura semiconductora que tiene pelicula resistente a particulas alfa y metodo para elaborar la misma |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0152334B1 (es) |
JP (1) | JPS60183750A (es) |
KR (1) | KR920001026B1 (es) |
CA (1) | CA1229932A (es) |
DE (1) | DE3572258D1 (es) |
MX (1) | MX167979B (es) |
PH (1) | PH22133A (es) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2562163B2 (ja) * | 1986-09-26 | 1996-12-11 | ゼネラル・エレクトリック・カンパニイ | 少なくとも1つの半導体チップ装置の表面に重合体フィルムを結合する方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5568659A (en) * | 1978-11-20 | 1980-05-23 | Hitachi Ltd | Semiconductor device and manufacturing method thereof |
EP0028490B1 (en) * | 1979-11-02 | 1983-12-21 | BURROUGHS CORPORATION (a Michigan corporation) | Integrated circuit with alpha radiation shielding means |
JPS577144A (en) * | 1980-06-17 | 1982-01-14 | Fujitsu Ltd | Semiconductor device |
JPS5748251A (en) * | 1980-09-04 | 1982-03-19 | Mitsubishi Electric Corp | Semiconductor device |
JPS57120355A (en) * | 1981-01-20 | 1982-07-27 | Toshiba Corp | Manufacture of semiconductor element |
US4388132A (en) * | 1981-06-01 | 1983-06-14 | Burroughs Corporation | Method of attaching a protective film to an integrated circuit |
-
1984
- 1984-11-29 KR KR1019840007525A patent/KR920001026B1/ko not_active IP Right Cessation
- 1984-12-14 MX MX203741A patent/MX167979B/es unknown
-
1985
- 1985-02-01 EP EP85400164A patent/EP0152334B1/en not_active Expired
- 1985-02-01 DE DE8585400164T patent/DE3572258D1/de not_active Expired
- 1985-02-07 PH PH31824A patent/PH22133A/en unknown
- 1985-02-08 CA CA000473839A patent/CA1229932A/en not_active Expired
- 1985-02-08 JP JP60022131A patent/JPS60183750A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
PH22133A (en) | 1988-06-01 |
EP0152334A3 (en) | 1986-02-05 |
KR850006253A (ko) | 1985-10-02 |
EP0152334A2 (en) | 1985-08-21 |
CA1229932A (en) | 1987-12-01 |
JPS60183750A (ja) | 1985-09-19 |
EP0152334B1 (en) | 1989-08-09 |
KR920001026B1 (ko) | 1992-02-01 |
DE3572258D1 (en) | 1989-09-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR840003534A (ko) | 반도체 장치와 그 제조 방법 | |
GT199300053A (es) | Metodo y aparato para producir dispositivos de circuito integrado | |
DE3577912D1 (de) | Interferometrische methoden fuer die fabrikation von halbleitervorrichtungen. | |
DE3162470D1 (en) | Method of manufacturing semiconductor devices with submicron lines | |
DE3381215D1 (de) | Integrierte halbleiterschaltungen und verfahren zur herstellung. | |
BR9405158A (pt) | Dispositivo semicondutor que inclui uma estrutura de isolamento,método de formação de um dispositivo de circuito integrado e método de formação de uma estrutura semicondutora | |
IT8120132A0 (it) | Metodo di fabbricazione di un dispositivo semiconduttore e dispositivo semiconduttore fabbricato con l'ausilio di tale metodo. | |
EP0126621A3 (en) | Alignment marks on semiconductor wafers and method of manufacturing the marks | |
DE3585364D1 (de) | Halbleitervorrichtungen mit hoher durchbruchspannung. | |
KR840008214A (ko) | 반도체장치 및 그 제조방법 | |
KR860002135A (ko) | 반도체기판의 주표면에 凹형 도랑이 형성된 반도체장치 및 그 제조방법 | |
ES528336A0 (es) | Metodo para encapsular circuitos electronicos | |
DE68924048D1 (de) | Belichtungsmaske für ein Halbleiterplättchen und Belichtungsverfahren. | |
DE3686310D1 (de) | Dielektrisch isoliertes integriertes halbleiterbauelement und herstellungsverfahren. | |
IT8721109A0 (it) | Elemento di quarzo fuso da impiegare nella fabbricazione di semiconduttori. | |
IT7927119A0 (it) | Processo e relativo apparato per la metallizzazione di dispositivi semiconduttori. | |
IT1150674B (it) | Procedimento per la produzione di un semiconduttore amorfo e dispositivi che contengono tale semiconduttore | |
GB2131205B (en) | Aligning masks and wafers in the manufacture of semiconductor devices | |
MX167979B (es) | Estructura semiconductora que tiene pelicula resistente a particulas alfa y metodo para elaborar la misma | |
BR8200760A (pt) | Liga semicondutora amorfa e processo para produzir uma camada amorfa de liga semicondutora | |
KR870003575A (ko) | 반도체장치의 형성방법 | |
DE68926078D1 (de) | Belichtungsverfahren für Halbleiteranordnungen und Lochmaske dafür | |
GB1484218A (en) | Semiconductor rectifiers | |
EP0104765A3 (en) | Substrate structure of semiconductor device and method of manufacturing the same | |
SE9700773D0 (sv) | Semiconductor and method relating to semiconductors |