JPS57120355A - Manufacture of semiconductor element - Google Patents
Manufacture of semiconductor elementInfo
- Publication number
- JPS57120355A JPS57120355A JP590081A JP590081A JPS57120355A JP S57120355 A JPS57120355 A JP S57120355A JP 590081 A JP590081 A JP 590081A JP 590081 A JP590081 A JP 590081A JP S57120355 A JPS57120355 A JP S57120355A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- polyimide
- subsequently
- thick film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
- H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
PURPOSE:To form a thick film for preventing a malfunction by alpha rays in an accurate pattern by forming a thick film of synthetic resin on a predetermined main face of semiconductor substrate by using a dry film and a lift-off technique. CONSTITUTION:A P-N junction is formed and a thermo compression bonding by dry film is provided for an Si substrate 20 including a field oxide film 21, a bonding pad 22 and a protective layer 23 by utilizing a resist layer 12 exposed by exfoliating its mylar polyester sheet. Subsequently, an exposure is established by using a mask only to a predetermined area wherein polyimide thick film is not formed and a resist layer 12' is left in the predetermined are through a processing. Subsequently, a polyimide resin liquid is coated to form a polyimide layer 30. Subsequently, the foregoing layer 12' is removed and a polyimide layer 30' for which a patterning is provided is formed by a lift-off technique.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP590081A JPS57120355A (en) | 1981-01-20 | 1981-01-20 | Manufacture of semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP590081A JPS57120355A (en) | 1981-01-20 | 1981-01-20 | Manufacture of semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57120355A true JPS57120355A (en) | 1982-07-27 |
Family
ID=11623761
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP590081A Pending JPS57120355A (en) | 1981-01-20 | 1981-01-20 | Manufacture of semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57120355A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60183750A (en) * | 1984-02-09 | 1985-09-19 | フエアチアイルド カメラ アンド インストルメント コーポレーシヨン | Semiconductor structure with alpha-ray resistant film and method of producing same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53106585A (en) * | 1977-02-28 | 1978-09-16 | Nec Corp | Production of semiconductor device |
JPS5643614A (en) * | 1979-09-17 | 1981-04-22 | Nippon Telegr & Teleph Corp <Ntt> | Production of plug for optical fiber connector |
-
1981
- 1981-01-20 JP JP590081A patent/JPS57120355A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53106585A (en) * | 1977-02-28 | 1978-09-16 | Nec Corp | Production of semiconductor device |
JPS5643614A (en) * | 1979-09-17 | 1981-04-22 | Nippon Telegr & Teleph Corp <Ntt> | Production of plug for optical fiber connector |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60183750A (en) * | 1984-02-09 | 1985-09-19 | フエアチアイルド カメラ アンド インストルメント コーポレーシヨン | Semiconductor structure with alpha-ray resistant film and method of producing same |
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