MD4423C1 - Газовый сенсор на основе полупроводниковых оксидов (варианты) - Google Patents

Газовый сенсор на основе полупроводниковых оксидов (варианты)

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Publication number
MD4423C1
MD4423C1 MDA20150001A MD20150001A MD4423C1 MD 4423 C1 MD4423 C1 MD 4423C1 MD A20150001 A MDA20150001 A MD A20150001A MD 20150001 A MD20150001 A MD 20150001A MD 4423 C1 MD4423 C1 MD 4423C1
Authority
MD
Moldova
Prior art keywords
gas sensor
deposited
film
sensor based
semiconductor oxides
Prior art date
Application number
MDA20150001A
Other languages
English (en)
Romanian (ro)
Other versions
MD4423B1 (ru
Inventor
Василе ПОСТИКА
Виорел ТРОФИМ
Николай АБАБИЙ
Виктор ШОНТЯ
Олег ЛУПАН
Original Assignee
Василе ПОСТИКА
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Василе ПОСТИКА filed Critical Василе ПОСТИКА
Priority to MDA20150001A priority Critical patent/MD4423C1/ru
Publication of MD4423B1 publication Critical patent/MD4423B1/ru
Publication of MD4423C1 publication Critical patent/MD4423C1/ru

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  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

Изобретение относится к электроизмерительной технике, в частности к газовым сенсорам на основе нанокристаллической пленки из оксида меди легированного серебром.Газовый сенсор на основе полупроводниковых оксидов, согласно первому варианту для этанола, включает стеклянную подложку, на одной из поверхностей которой осаждена методом химического синтеза из растворов пленка Cu2O:Ag толщиной 1 µм, которая обрабатывается термически при температуре 650°C в течение 30 мин. Омические контакты осаждены на пленке и выполнены в виде меандра.Газовый сенсор на основе полупроводниковых оксидов, согласно второму варианту для водорода, включает стеклянную подложку, на одной из поверхностей которой осаждена методом химического синтеза из растворов пленка Cu2O:Ag толщиной 1 µм, которая обрабатывается термически при температуре 450°C в течение 30 мин. Омические контакты осаждены на пленке и выполнены в виде меандра.
MDA20150001A 2015-01-13 2015-01-13 Газовый сенсор на основе полупроводниковых оксидов (варианты) MD4423C1 (ru)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20150001A MD4423C1 (ru) 2015-01-13 2015-01-13 Газовый сенсор на основе полупроводниковых оксидов (варианты)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20150001A MD4423C1 (ru) 2015-01-13 2015-01-13 Газовый сенсор на основе полупроводниковых оксидов (варианты)

Publications (2)

Publication Number Publication Date
MD4423B1 MD4423B1 (ru) 2016-05-31
MD4423C1 true MD4423C1 (ru) 2016-12-31

Family

ID=56096829

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20150001A MD4423C1 (ru) 2015-01-13 2015-01-13 Газовый сенсор на основе полупроводниковых оксидов (варианты)

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MD (1) MD4423C1 (ru)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4495C1 (ru) * 2016-09-09 2018-01-31 Николай АБАБИЙ Сенсор этанола на основе оксида меди

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2270762A (en) * 1992-09-14 1994-03-23 Mori Seisakusho Co Ltd Contact combustion type carbon monoxide sensor
MD2154B1 (en) * 2001-11-07 2003-04-30 Valerian Dorogan Gas sensor
MD2220B2 (en) * 2000-09-28 2003-07-31 Valeriu Miron Heterojunction sensor of toxic gases
MD3018F1 (en) * 2005-08-10 2006-03-31 Institutul De Fizica Aplicata Al Academiei De Stiinte A Republicii Moldova Gas sensor
MD3086F1 (en) * 2005-08-10 2006-06-30 Institutul De Fizica Aplicata Al Academiei De Stiinte A Republicii Moldova Semiconductor gas sensor
CN101913645A (zh) * 2010-08-16 2010-12-15 南京大学 Cu2O纳米晶、其制备方法、用途及酒精传感器
US8702962B1 (en) * 2007-05-25 2014-04-22 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Carbon dioxide gas sensors and method of manufacturing and using same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2270762A (en) * 1992-09-14 1994-03-23 Mori Seisakusho Co Ltd Contact combustion type carbon monoxide sensor
MD2220B2 (en) * 2000-09-28 2003-07-31 Valeriu Miron Heterojunction sensor of toxic gases
MD2154B1 (en) * 2001-11-07 2003-04-30 Valerian Dorogan Gas sensor
MD3018F1 (en) * 2005-08-10 2006-03-31 Institutul De Fizica Aplicata Al Academiei De Stiinte A Republicii Moldova Gas sensor
MD3086F1 (en) * 2005-08-10 2006-06-30 Institutul De Fizica Aplicata Al Academiei De Stiinte A Republicii Moldova Semiconductor gas sensor
US8702962B1 (en) * 2007-05-25 2014-04-22 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Carbon dioxide gas sensors and method of manufacturing and using same
CN101913645A (zh) * 2010-08-16 2010-12-15 南京大学 Cu2O纳米晶、其制备方法、用途及酒精传感器

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
L. Liao, Z. Zhang, B. Yan, Z. Zheng, Q. L. Bao, T. Wu et. al. Multifunctional CuO nanowire devices: p-type field effect transistors and CO gas sensors, Nanotechnology. 2009 Feb 25;20(8):085203 *
Nguyen Duc Hoa, Nguyen Van Quy, Mai Anh Tuan, Nguyen Van Hieu, Facile synthesis of p-type semiconducting cupric oxide nanowires and their gas-sensing properties, Physica E Low-dimensional Systems and Nanostructures (Impact Factor: 2). 12/2009; 42(2):146-149 *
Yun-Hyuk Choi, Dai-Hong Kim, Seong-Hyeon Hong, Kug Sun Hong, H2 and C2H5OH sensing characteristics of mesoporous p-type CuO films prepared via a novel precursor-based ink solution route, Sensors and Actuators B: Chemical 178, 395-403 *

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Publication number Publication date
MD4423B1 (ru) 2016-05-31

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