MD4423C1 - Gas sensor based on semiconductor oxides (embodiments) - Google Patents
Gas sensor based on semiconductor oxides (embodiments)Info
- Publication number
- MD4423C1 MD4423C1 MDA20150001A MD20150001A MD4423C1 MD 4423 C1 MD4423 C1 MD 4423C1 MD A20150001 A MDA20150001 A MD A20150001A MD 20150001 A MD20150001 A MD 20150001A MD 4423 C1 MD4423 C1 MD 4423C1
- Authority
- MD
- Moldova
- Prior art keywords
- gas sensor
- deposited
- film
- sensor based
- semiconductor oxides
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000007789 gas Substances 0.000 abstract 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract 2
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 abstract 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000003786 synthesis reaction Methods 0.000 abstract 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 abstract 1
- 239000005751 Copper oxide Substances 0.000 abstract 1
- 229910000431 copper oxide Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The invention relates to electrical measuring engineering, in particular to gas sensors based on nanocrystalline films of copper oxide doped with silver.The gas sensor based on semiconductor oxides, according to a first embodiment for ethanol, comprises a glass substrate, on one surface of which is deposited by the method of chemical synthesis from solutions a Cu2O:Ag film of a thickness of 1 µm, which is thermally treated at 650°C for 30 min. The ohmic contacts are deposited on the film and are made in the form of a meander.The gas sensor based on semiconductor oxides, according to a second embodiment for hydrogen, comprises a glass substrate, on one surface of which is deposited by the method of chemical synthesis from solutions a Cu2O:Ag film of a thickness of 1 µm, which is thermally treated at 450°C for 30 min. The ohmic contacts are deposited on the film and are made in the form of a meander.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20150001A MD4423C1 (en) | 2015-01-13 | 2015-01-13 | Gas sensor based on semiconductor oxides (embodiments) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20150001A MD4423C1 (en) | 2015-01-13 | 2015-01-13 | Gas sensor based on semiconductor oxides (embodiments) |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD4423B1 MD4423B1 (en) | 2016-05-31 |
| MD4423C1 true MD4423C1 (en) | 2016-12-31 |
Family
ID=56096829
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDA20150001A MD4423C1 (en) | 2015-01-13 | 2015-01-13 | Gas sensor based on semiconductor oxides (embodiments) |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD4423C1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD4495C1 (en) * | 2016-09-09 | 2018-01-31 | Николай АБАБИЙ | Ethanol sensor based on copper oxide |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2270762A (en) * | 1992-09-14 | 1994-03-23 | Mori Seisakusho Co Ltd | Contact combustion type carbon monoxide sensor |
| MD2154B1 (en) * | 2001-11-07 | 2003-04-30 | Valerian Dorogan | Gas sensor |
| MD2220B2 (en) * | 2000-09-28 | 2003-07-31 | Valeriu Miron | Heterojunction sensor of toxic gases |
| MD3018F1 (en) * | 2005-08-10 | 2006-03-31 | Institutul De Fizica Aplicata Al Academiei De Stiinte A Republicii Moldova | Gas sensor |
| MD3086F1 (en) * | 2005-08-10 | 2006-06-30 | Institutul De Fizica Aplicata Al Academiei De Stiinte A Republicii Moldova | Semiconductor gas sensor |
| CN101913645A (en) * | 2010-08-16 | 2010-12-15 | 南京大学 | Cu2O nanocrystalline, preparation method and application thereof and alcohol sensor |
| US8702962B1 (en) * | 2007-05-25 | 2014-04-22 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | Carbon dioxide gas sensors and method of manufacturing and using same |
-
2015
- 2015-01-13 MD MDA20150001A patent/MD4423C1/en not_active IP Right Cessation
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2270762A (en) * | 1992-09-14 | 1994-03-23 | Mori Seisakusho Co Ltd | Contact combustion type carbon monoxide sensor |
| MD2220B2 (en) * | 2000-09-28 | 2003-07-31 | Valeriu Miron | Heterojunction sensor of toxic gases |
| MD2154B1 (en) * | 2001-11-07 | 2003-04-30 | Valerian Dorogan | Gas sensor |
| MD3018F1 (en) * | 2005-08-10 | 2006-03-31 | Institutul De Fizica Aplicata Al Academiei De Stiinte A Republicii Moldova | Gas sensor |
| MD3086F1 (en) * | 2005-08-10 | 2006-06-30 | Institutul De Fizica Aplicata Al Academiei De Stiinte A Republicii Moldova | Semiconductor gas sensor |
| US8702962B1 (en) * | 2007-05-25 | 2014-04-22 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | Carbon dioxide gas sensors and method of manufacturing and using same |
| CN101913645A (en) * | 2010-08-16 | 2010-12-15 | 南京大学 | Cu2O nanocrystalline, preparation method and application thereof and alcohol sensor |
Non-Patent Citations (3)
| Title |
|---|
| L. Liao, Z. Zhang, B. Yan, Z. Zheng, Q. L. Bao, T. Wu et. al. Multifunctional CuO nanowire devices: p-type field effect transistors and CO gas sensors, Nanotechnology. 2009 Feb 25;20(8):085203 * |
| Nguyen Duc Hoa, Nguyen Van Quy, Mai Anh Tuan, Nguyen Van Hieu, Facile synthesis of p-type semiconducting cupric oxide nanowires and their gas-sensing properties, Physica E Low-dimensional Systems and Nanostructures (Impact Factor: 2). 12/2009; 42(2):146-149 * |
| Yun-Hyuk Choi, Dai-Hong Kim, Seong-Hyeon Hong, Kug Sun Hong, H2 and C2H5OH sensing characteristics of mesoporous p-type CuO films prepared via a novel precursor-based ink solution route, Sensors and Actuators B: Chemical 178, 395-403 * |
Also Published As
| Publication number | Publication date |
|---|---|
| MD4423B1 (en) | 2016-05-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG4A | Patent for invention issued | ||
| KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
| MM4A | Patent for invention definitely lapsed due to non-payment of fees |