MX2018008232A - Fotocatodo para un dispositivo de fotoelectrolisis, metodo para producir tal fotocatodo y dispositivo de fotoelectrolisis. - Google Patents

Fotocatodo para un dispositivo de fotoelectrolisis, metodo para producir tal fotocatodo y dispositivo de fotoelectrolisis.

Info

Publication number
MX2018008232A
MX2018008232A MX2018008232A MX2018008232A MX2018008232A MX 2018008232 A MX2018008232 A MX 2018008232A MX 2018008232 A MX2018008232 A MX 2018008232A MX 2018008232 A MX2018008232 A MX 2018008232A MX 2018008232 A MX2018008232 A MX 2018008232A
Authority
MX
Mexico
Prior art keywords
layer
photocathode
type semiconductor
photoelectrolysis device
photoelectrolysis
Prior art date
Application number
MX2018008232A
Other languages
English (en)
Inventor
Toupin Johanna
ARTERO Vicent
Christel Laberty-Robert
Original Assignee
Total Raffinage Chimie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Total Raffinage Chimie filed Critical Total Raffinage Chimie
Publication of MX2018008232A publication Critical patent/MX2018008232A/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
    • C25B11/073—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material
    • C25B11/075—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material consisting of a single catalytic element or catalytic compound
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B1/00—Electrolytic production of inorganic compounds or non-metals
    • C25B1/50—Processes
    • C25B1/55—Photoelectrolysis
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
    • C25B11/052—Electrodes comprising one or more electrocatalytic coatings on a substrate
    • C25B11/053—Electrodes comprising one or more electrocatalytic coatings on a substrate characterised by multilayer electrocatalytic coatings
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
    • C25B11/073—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material
    • C25B11/075—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material consisting of a single catalytic element or catalytic compound
    • C25B11/077—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material consisting of a single catalytic element or catalytic compound the compound being a non-noble metal oxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Hybrid Cells (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)

Abstract

La invención se relaciona a un fotocátodo (7) para un dispositivo de fotoelectrólisis (1), que comprende: un substrato (11); una capa (13) de un conductor de metal arreglado sobre el substrato (11); por lo menos una primera capa (15) del primer semiconductor tipo p arreglado sobre la capa (13) del conductor de metal; por lo menos una segunda capa (17) de un segundo semiconductor tipo p arreglado sobre la primera capa (15) del primer semiconductor tipo p; y por lo menos una tercera capa (19) de un tercer semiconductor tipo n que forma una capa protectora y arreglada sobre la segunda capa (17) del segundo semiconductor tipo p, la tercera capa (19) del tercer semiconductor tipo n que es estable en medio acuoso para prevenir el contacto entre un electrolito acuoso y la primera (15) y segunda (17) capas del primero y segundo, semiconductores tipo p y que consiste de un material de tipo ABO3, donde A se selecciona de Ca, Sr y Ba y B se selecciona de Ti, Fe.
MX2018008232A 2016-01-04 2017-01-04 Fotocatodo para un dispositivo de fotoelectrolisis, metodo para producir tal fotocatodo y dispositivo de fotoelectrolisis. MX2018008232A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1650018A FR3046425B1 (fr) 2016-01-04 2016-01-04 Photocathode pour un dispositif de photoelectrolyse, un procede de fabrication d'une telle photocathode et un dispositif de photoelectrolyse
PCT/EP2017/050123 WO2017118650A1 (fr) 2016-01-04 2017-01-04 Photocathode pour un dispositif de photoélectrolyse, un procédé de fabrication d'une telle photocathode et un dispositif de photoélectrolyse

Publications (1)

Publication Number Publication Date
MX2018008232A true MX2018008232A (es) 2019-01-30

Family

ID=55759773

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2018008232A MX2018008232A (es) 2016-01-04 2017-01-04 Fotocatodo para un dispositivo de fotoelectrolisis, metodo para producir tal fotocatodo y dispositivo de fotoelectrolisis.

Country Status (10)

Country Link
US (1) US20190017180A1 (es)
EP (1) EP3400320B1 (es)
JP (1) JP2019503435A (es)
KR (1) KR20180121480A (es)
CN (1) CN109072456B (es)
AU (1) AU2017205676A1 (es)
FR (1) FR3046425B1 (es)
MX (1) MX2018008232A (es)
WO (1) WO2017118650A1 (es)
ZA (1) ZA201803973B (es)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022187124A (ja) * 2021-06-07 2022-12-19 株式会社日立製作所 水素生成セル
CN114122181A (zh) * 2021-11-25 2022-03-01 中国科学院电工研究所 一种铁电-半导体耦合光伏器件及其制备方法
CN115924961B (zh) * 2022-09-28 2023-09-08 广东夜草农业科技有限公司 氧化物光阴极材料及光阴极制作方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5648125A (en) * 1979-09-28 1981-05-01 Asahi Chemical Ind Silicon board composite structure semiconductor electrode
JP2003088753A (ja) * 2001-09-19 2003-03-25 Sumitomo Electric Ind Ltd 酸化還元反応装置、水素および酸素の製造方法、二酸化炭素の固定方法、化合物の製造方法、Ｃｕ２Ｏの安定化方法およびＣｕ２Ｏの安定化液
JP2007239048A (ja) * 2006-03-09 2007-09-20 Univ Of Electro-Communications 光エネルギー変換装置及び半導体光電極
CN101620935B (zh) * 2009-07-21 2012-05-30 华中师范大学 具有太阳光能量存储及释放功能的TiO2基复合薄膜材料
WO2011058723A1 (ja) * 2009-11-10 2011-05-19 パナソニック株式会社 光電気化学セル及びそれを用いたエネルギーシステム
US20130168228A1 (en) * 2011-04-12 2013-07-04 Geoffrey A. Ozin Photoactive Material Comprising Nanoparticles of at Least Two Photoactive Constituents
US9347141B2 (en) * 2011-10-27 2016-05-24 The Regents Of The University Of California Nanowire mesh solar fuels generator
CN103219565B (zh) * 2013-03-20 2015-09-09 北京理工大学 逆光电化学电池
CN104338546A (zh) * 2013-07-31 2015-02-11 中国科学院大连化学物理研究所 一种基于层状结构半导体材料光催化剂及其产氢应用
US10036093B2 (en) * 2013-08-20 2018-07-31 The Board Of Trustees Of The Leland Stanford Junior University Heterojunction elevated-temperature photoelectrochemical cell
JP2015180765A (ja) * 2014-03-04 2015-10-15 株式会社デンソー 二酸化炭素還元電極及びこれを用いた二酸化炭素還元装置
JP6569495B2 (ja) * 2015-11-19 2019-09-04 株式会社豊田中央研究所 半導体電極、光エネルギー変換装置および半導体電極の製造方法

Also Published As

Publication number Publication date
KR20180121480A (ko) 2018-11-07
AU2017205676A1 (en) 2018-07-12
US20190017180A1 (en) 2019-01-17
CN109072456B (zh) 2020-08-25
WO2017118650A1 (fr) 2017-07-13
FR3046425B1 (fr) 2018-01-12
EP3400320A1 (fr) 2018-11-14
CN109072456A (zh) 2018-12-21
JP2019503435A (ja) 2019-02-07
FR3046425A1 (fr) 2017-07-07
EP3400320B1 (fr) 2019-10-30
ZA201803973B (en) 2019-02-27

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