JPS5648125A - Silicon board composite structure semiconductor electrode - Google Patents

Silicon board composite structure semiconductor electrode

Info

Publication number
JPS5648125A
JPS5648125A JP12379579A JP12379579A JPS5648125A JP S5648125 A JPS5648125 A JP S5648125A JP 12379579 A JP12379579 A JP 12379579A JP 12379579 A JP12379579 A JP 12379579A JP S5648125 A JPS5648125 A JP S5648125A
Authority
JP
Japan
Prior art keywords
composite structure
semiconductor electrode
structure semiconductor
board composite
silicon board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12379579A
Other languages
Japanese (ja)
Other versions
JPS6240436B2 (en
Inventor
Kazuhiko Yazawa
Hiroshi Morizaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Chemical Industry Co Ltd
Original Assignee
Asahi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Industry Co Ltd filed Critical Asahi Chemical Industry Co Ltd
Priority to JP12379579A priority Critical patent/JPS5648125A/en
Publication of JPS5648125A publication Critical patent/JPS5648125A/en
Publication of JPS6240436B2 publication Critical patent/JPS6240436B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/10—Process efficiency
    • Y02P20/133—Renewable energy sources, e.g. sunlight

Landscapes

  • Hybrid Cells (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)
JP12379579A 1979-09-28 1979-09-28 Silicon board composite structure semiconductor electrode Granted JPS5648125A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12379579A JPS5648125A (en) 1979-09-28 1979-09-28 Silicon board composite structure semiconductor electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12379579A JPS5648125A (en) 1979-09-28 1979-09-28 Silicon board composite structure semiconductor electrode

Publications (2)

Publication Number Publication Date
JPS5648125A true JPS5648125A (en) 1981-05-01
JPS6240436B2 JPS6240436B2 (en) 1987-08-28

Family

ID=14869488

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12379579A Granted JPS5648125A (en) 1979-09-28 1979-09-28 Silicon board composite structure semiconductor electrode

Country Status (1)

Country Link
JP (1) JPS5648125A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012682A (en) * 1983-06-01 1985-01-23 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Method of producing light responsive amorphous semiconductormaterial, photoanode produced by same material and photoelectrochemical cell including same photoanode
WO2003035923A1 (en) * 2001-10-25 2003-05-01 Haute Ecole Neuchateloise Method for making coloured parts
JP2014015642A (en) * 2012-07-06 2014-01-30 National Institute Of Advanced Industrial & Technology Visible light responsive semiconductor photoelectrode
JP2017503084A (en) * 2013-12-04 2017-01-26 テクニシェ ウニヴェルズィテート ベルリンＴｅｃｈｎｉｓｃｈｅ Ｕｎｉｖｅｒｓｉｔａｔ Ｂｅｒｌｉｎ Metal chalcogenide thin film electrode, production method and use thereof
JP2019503435A (en) * 2016-01-04 2019-02-07 トタル ラフィナージュ シミ Photocathode for photoelectrolysis device, method for producing photocathode, and photoelectrolysis device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012682A (en) * 1983-06-01 1985-01-23 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Method of producing light responsive amorphous semiconductormaterial, photoanode produced by same material and photoelectrochemical cell including same photoanode
WO2003035923A1 (en) * 2001-10-25 2003-05-01 Haute Ecole Neuchateloise Method for making coloured parts
JP2014015642A (en) * 2012-07-06 2014-01-30 National Institute Of Advanced Industrial & Technology Visible light responsive semiconductor photoelectrode
JP2017503084A (en) * 2013-12-04 2017-01-26 テクニシェ ウニヴェルズィテート ベルリンＴｅｃｈｎｉｓｃｈｅ Ｕｎｉｖｅｒｓｉｔａｔ Ｂｅｒｌｉｎ Metal chalcogenide thin film electrode, production method and use thereof
US10526716B2 (en) 2013-12-04 2020-01-07 Technische Universitaet Berlin Metal chalcogenide thin film electrode, method for the production thereof and use
JP2019503435A (en) * 2016-01-04 2019-02-07 トタル ラフィナージュ シミ Photocathode for photoelectrolysis device, method for producing photocathode, and photoelectrolysis device

Also Published As

Publication number Publication date
JPS6240436B2 (en) 1987-08-28

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