MD3372B1 - Procedeu de obtinere a fotoelementelor (variante) - Google Patents
Procedeu de obtinere a fotoelementelor (variante) Download PDFInfo
- Publication number
- MD3372B1 MD3372B1 MDA20060106A MD20060106A MD3372B1 MD 3372 B1 MD3372 B1 MD 3372B1 MD A20060106 A MDA20060106 A MD A20060106A MD 20060106 A MD20060106 A MD 20060106A MD 3372 B1 MD3372 B1 MD 3372B1
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- impurities
- diffusion
- deposition
- novelty
- processes
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- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
Abstract
Inventia se refera la tehnologia dispozitivelor cu semiconductori, in special la procedeele de obtinere a celulelor fotovoltaice. Procedeul, conform primei variante, include procesele de depunere chimica sau din vapori a peliculelor din impuritati pe suprafata plachetei de semiconductor, de difuzie, de oxidare si depunere a contactelor ohmice. Noutatea consta in aceea ca procesele de difuzie a impuritatilor din diferite surse cu formarea jonctiunilor de tipul n+ - p, sau p+ - n, sau n+ - p – p+, oxidare, depunere contactelor ohmice, si depunere a peliculelor antireflectoare se efectueaza cu prelucrarea fototermica rapida. Noutatea procedeului, conform variantei a doua, consta in aceea ca peuna sau ambele suprafete opuse ale plachetei de semiconductor de tipul „p” sau „n” se depune o sursa de difuzie in forma de pelicula sticloasa dopatacu una din impuritati, donor sau acceptor, de exemplu, siliciura de fosfor sau siliciura de bor, prin metoda oxidarii anodice sau a depunerii chimicein prezenta razelor ultraviolete sau in lipsa luminii, dupa care are loc prelucrarea fototermica rapida a plachetei, difuzia impuritatilor cu formarea jonctiunilor de tipul n+- p, sau p+ - n, sau n+ - p – p+, sau p+ - n – n+ in vid, in aer sau in prezenta unui gaz inert, de exemplu, argon, si depunerea peliculelor antireflectoare. Noutatea procedeului, conform variantei a treia, consta in aceea ca pe una din suprafetele plachetei de semiconductor de tipul „p” sau „n” se depune o sursa de difuzie in forma de pelicula sticloasa dopata cu una din impuritatile donor, de exemplu, siliciura de fosfor, iar pe suprafata opusa a placii de semiconductor se depune o alta sursa de difuzie de tip acceptor in forma de pelicula metalica, de exemplu, dinaluminiu, prin metoda evaporarii in vid, sau oxidarii anodice, sau prin depunerea chimica in prezenta razelor ultraviolete sau in lipsa luminii; dupacare are loc prelucrarea fototermica rapida a plachetei, difuzia impuritatilor cu formarea jonctiunilor de tipul n+ - p, sau p+ - n, sau n+ - p – p+,sau p+ - n – n in vid, in aer sau in prezenta unui gaz inert, de exemplu, argon, si depunerea peliculelor antireflectoare. Noutatea procedeului, conform variantei a patra, consta in aceea ca el include procesele de difuzie a impuritatilor din diferite surse cu formarea jonctiunilor conform revendicarilor 1, 2 sau 3, apoi, dupa curatirea suprafeteiplachetei, are loc depunerea contactelor ohmice de metal, de exemplu, Al sau Ni, sau Cu, sau pasta de Ag, sau contacte ohmice stravezii de InSnO, urmate de prelucrarea fototermica rapida in vid, in aer sau in camera cu gaze inerte, de exemplu, cu argon, si depunerea peliculelor antireflectoare. Noutatea procedeului, conform variantei a cincea, consta in aceea ca el include procesele de difuzie a impuritatilor din diferite surse cu formarea jonctiunilor si depunerea contactelor ohmice conform revendicarilor 1, 2, 3, sau 4, dupa care are loc depunerea peliculei stravezii cu proprietati de antireflector
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20060106A MD3372C2 (ro) | 2006-03-31 | 2006-03-31 | Procedeu de obtinere a celuler fotovoltaice (variante) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20060106A MD3372C2 (ro) | 2006-03-31 | 2006-03-31 | Procedeu de obtinere a celuler fotovoltaice (variante) |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD3372B1 true MD3372B1 (ro) | 2007-07-31 |
| MD3372C2 MD3372C2 (ro) | 2008-02-29 |
Family
ID=38331514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDA20060106A MD3372C2 (ro) | 2006-03-31 | 2006-03-31 | Procedeu de obtinere a celuler fotovoltaice (variante) |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD3372C2 (ro) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD4554B1 (ro) * | 2017-10-18 | 2018-02-28 | Государственный Университет Молд0 | Procedeu de majorare a eficienţei celulelor fotovoltaice pe baza p+InP-p-InP-n+CdS |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD175Z (ro) * | 2008-02-25 | 2010-10-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Dispozitiv de obţinere a peliculelor supraconductoare |
| MD20080058A (ro) * | 2008-02-25 | 2009-08-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Dispozitiv de obţinere a peliculelor supraconductoare |
| MD353Z (ro) * | 2010-02-24 | 2011-10-31 | Институт Электронной Инженерии И Промышленных Технологий | Ventil supraconductor de spin |
| MD4182C1 (ro) * | 2011-04-15 | 2013-04-30 | Государственный Университет Молд0 | Dispozitiv semiconductor cu joncţiune p-n în relief (variante) |
| MD4261B1 (ro) * | 2011-05-12 | 2013-11-30 | Государственный Университет Молд0 | Procedeu de fabricare a dispozitivului semiconductor cu joncţiune p-n în relief (variante) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6569249B1 (en) * | 2000-04-18 | 2003-05-27 | Clemson University | Process for forming layers on substrates |
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2006
- 2006-03-31 MD MDA20060106A patent/MD3372C2/ro not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD4554B1 (ro) * | 2017-10-18 | 2018-02-28 | Государственный Университет Молд0 | Procedeu de majorare a eficienţei celulelor fotovoltaice pe baza p+InP-p-InP-n+CdS |
Also Published As
| Publication number | Publication date |
|---|---|
| MD3372C2 (ro) | 2008-02-29 |
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| Date | Code | Title | Description |
|---|---|---|---|
| FG4A | Patent for invention issued | ||
| KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
| MM4A | Patent for invention definitely lapsed due to non-payment of fees |